JP2006520530A - ケイ素含有誘電体の研磨方法 - Google Patents
ケイ素含有誘電体の研磨方法 Download PDFInfo
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- JP2006520530A JP2006520530A JP2006503246A JP2006503246A JP2006520530A JP 2006520530 A JP2006520530 A JP 2006520530A JP 2006503246 A JP2006503246 A JP 2006503246A JP 2006503246 A JP2006503246 A JP 2006503246A JP 2006520530 A JP2006520530 A JP 2006520530A
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- acid
- polishing
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- substrate
- abrasive
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- 238000000034 method Methods 0.000 title claims abstract description 44
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 19
- 239000010703 silicon Substances 0.000 title claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 75
- -1 heterocyclic amine Chemical class 0.000 claims abstract description 59
- 239000000654 additive Substances 0.000 claims abstract description 56
- 230000000996 additive effect Effects 0.000 claims abstract description 48
- 150000003839 salts Chemical class 0.000 claims abstract description 34
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 30
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- 239000002253 acid Substances 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 22
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- 150000003456 sulfonamides Chemical class 0.000 claims abstract description 15
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- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical compound C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 claims abstract description 13
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- LJOODBDWMQKMFB-UHFFFAOYSA-N cyclohexylacetic acid Chemical compound OC(=O)CC1CCCCC1 LJOODBDWMQKMFB-UHFFFAOYSA-N 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 claims description 6
- GJAWHXHKYYXBSV-UHFFFAOYSA-N pyridinedicarboxylic acid Natural products OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 claims description 6
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- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 5
- FPIQZBQZKBKLEI-UHFFFAOYSA-N ethyl 1-[[2-chloroethyl(nitroso)carbamoyl]amino]cyclohexane-1-carboxylate Chemical compound ClCCN(N=O)C(=O)NC1(C(=O)OCC)CCCCC1 FPIQZBQZKBKLEI-UHFFFAOYSA-N 0.000 claims description 5
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- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 claims description 4
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- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- SIOXPEMLGUPBBT-UHFFFAOYSA-N Picolinic acid Natural products OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 claims description 4
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 3
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 3
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- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 3
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- 235000013922 glutamic acid Nutrition 0.000 claims description 3
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- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 2
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- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- HBROZNQEVUILML-UHFFFAOYSA-N salicylhydroxamic acid Chemical compound ONC(=O)C1=CC=CC=C1O HBROZNQEVUILML-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229940076279 serotonin Drugs 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- SEEPANYCNGTZFQ-UHFFFAOYSA-N sulfadiazine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)NC1=NC=CC=N1 SEEPANYCNGTZFQ-UHFFFAOYSA-N 0.000 description 1
- 229960004306 sulfadiazine Drugs 0.000 description 1
- ZZORFUFYDOWNEF-UHFFFAOYSA-N sulfadimethoxine Chemical compound COC1=NC(OC)=CC(NS(=O)(=O)C=2C=CC(N)=CC=2)=N1 ZZORFUFYDOWNEF-UHFFFAOYSA-N 0.000 description 1
- 229960000973 sulfadimethoxine Drugs 0.000 description 1
- 229960002135 sulfadimidine Drugs 0.000 description 1
- ASWVTGNCAZCNNR-UHFFFAOYSA-N sulfamethazine Chemical compound CC1=CC(C)=NC(NS(=O)(=O)C=2C=CC(N)=CC=2)=N1 ASWVTGNCAZCNNR-UHFFFAOYSA-N 0.000 description 1
- VACCAVUAMIDAGB-UHFFFAOYSA-N sulfamethizole Chemical compound S1C(C)=NN=C1NS(=O)(=O)C1=CC=C(N)C=C1 VACCAVUAMIDAGB-UHFFFAOYSA-N 0.000 description 1
- 229960005158 sulfamethizole Drugs 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- DZQVFHSCSRACSX-UHFFFAOYSA-N sulfaperin Chemical compound N1=CC(C)=CN=C1NS(=O)(=O)C1=CC=C(N)C=C1 DZQVFHSCSRACSX-UHFFFAOYSA-N 0.000 description 1
- 229960000277 sulfaperin Drugs 0.000 description 1
- GECHUMIMRBOMGK-UHFFFAOYSA-N sulfapyridine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)NC1=CC=CC=N1 GECHUMIMRBOMGK-UHFFFAOYSA-N 0.000 description 1
- 229960002211 sulfapyridine Drugs 0.000 description 1
- 229960003097 sulfaquinoxaline Drugs 0.000 description 1
- 229940117986 sulfobetaine Drugs 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- 229960002180 tetracycline Drugs 0.000 description 1
- 229930101283 tetracycline Natural products 0.000 description 1
- 235000019364 tetracycline Nutrition 0.000 description 1
- 150000003522 tetracyclines Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- VPYJNCGUESNPMV-UHFFFAOYSA-N triallylamine Chemical compound C=CCN(CC=C)CC=C VPYJNCGUESNPMV-UHFFFAOYSA-N 0.000 description 1
- OVCXRBARSPBVMC-UHFFFAOYSA-N triazolopyridine Chemical compound C=1N2C(C(C)C)=NN=C2C=CC=1C=1OC=NC=1C1=CC=C(F)C=C1 OVCXRBARSPBVMC-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229940011671 vitamin b6 Drugs 0.000 description 1
- FBZONXHGGPHHIY-UHFFFAOYSA-N xanthurenic acid Chemical compound C1=CC=C(O)C2=NC(C(=O)O)=CC(O)=C21 FBZONXHGGPHHIY-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
この実施例では、pKa約3〜約9である研磨添加剤を含有しているpH約5のを有する研磨組成物が、すぐれた二酸化ケイ素除去速度及び窒化ケイ素に対する二酸化ケイ素の高い選択率を有することを実証する。
この実施例では、基材層の除去速度及び選択率が、研磨組成物中の研磨添加剤の用量に依存することを実証する。
この実施例では、ケイ素に基づく誘電体層の除去速度及び選択性が、研磨組成物のpHに依存することを実証する。
この実施例では、ケイ素に基づく誘電体層の除去速度及び選択率が、研磨組成物のpHに依存することを実証する。
Claims (33)
- (i)ケイ素含有誘電体層を有する基材を、下記の(a)〜(c)を含有し、約7又はそれ未満のpHを有し、且つ無機研磨材粒子と静電的に会合する架橋ポリマー研磨材粒子を有意の量で含有しない化学機械的研磨系と接触させること:
(a)無機研磨材、
(b)アリールアミン、アミノアルコール、脂肪族アミン、複素環式アミン、ヒドロキサム酸、アミノカルボン酸、環状モノカルボン酸、不飽和モノカルボン酸、置換フェノール、スルホンアミド、チオール、これらの塩、及びそれらの組み合わせからなる群より選択され、且つpKa約3〜約9の官能基を有する、研磨添加剤、及び
(c)液体キャリヤ;並びに
(ii)前記ケイ素含有誘電体層の少なくとも一部を削って、前記基材を研磨すること;
を含む、ケイ素含有誘電体層を有する基材の研磨方法。 - 前記研磨添加剤が、pKa約4〜約9の官能基を有する、請求項1に記載の方法。
- 前記研磨添加剤が、pKa約3〜約8の官能基を有する、請求項2に記載の方法。
- 前記官能基が、アミン、カルボン酸、アルコール、チオール、スルホンアミド、イミド、ヒドロキサム酸、ヒドラジン、バルビツル酸、及びこれらの組み合わせからなる群より選択される、請求項2に記載の方法。
- 前記基材が、二酸化ケイ素層及び窒化ケイ素層を有する、請求項2に記載の方法。
- 前記研磨系が約2〜約6.5のpHを有する、請求項2に記載の方法。
- 前記研磨系が約3.5〜約5.5のpHを有する、請求項6に記載の方法。
- 前記研磨添加剤がアリールアミン化合物である、請求項2に記載の方法。
- 前記アリールアミン化合物が、カルボン酸、スルホン酸、ホスホン酸、ヒドロキシル基、チオール基、スルホンアミド、これらの塩、及びそれらの組み合わせから選択される1又は複数の置換基を更に有する、請求項8に記載の方法。
- 前記アリールアミン化合物が、アニリン、アントラニル酸、オルタニル酸、アミノフェノール、これらの塩、及びそれらの組み合わせからなる群より選択される、請求項9に記載の方法。
- 前記研磨添加剤が、複素環式アミン化合物である、請求項2に記載の方法。
- 前記複素環式アミン化合物が、イミダゾール、キノリン、ピリジン、2−メチルピリジン、2−ピリジンカルボン酸、ピリジンジカルボン酸、2−キノリンカルボン酸、モルホリン、ピペラジン、トリアゾール、ピロール、ピロール−2−カルボン酸、テトラゾール、これらの塩、及びそれらの組み合わせからなる群より選択される、請求項11に記載の方法。
- 前記研磨添加剤がアミノカルボン酸化合物である、請求項2に記載の方法。
- 前記アミノカルボン酸化合物が、グルタミン酸、アスパラギン酸、ヒスチジン、これらの塩、及びそれらの組み合わせからなる群より選択される、請求項13に記載の方法。
- 前記研磨添加剤が、C4〜12環状アルキル基又はC6〜12アリール基を有する環状モノカルボン酸化合物である、請求項2に記載の方法。
- 前記環状モノカルボン酸が、安息香酸、シクロヘキサンカルボン酸、シクロヘキシル酢酸、2−フェニル酢酸、これらの塩、及びそれらの組み合わせからなる群より選択される、請求項15に記載の方法。
- 前記研磨添加剤が、不飽和モノカルボン酸、ヒドロキサム酸、及びこれらの組み合わせからなる群より選択される、請求項2に記載の方法。
- 前記研磨添加剤が、置換フェノール、チオール、スルホンアミド、又はこれらの組み合わせから選択される、請求項2に記載の方法。
- 前記無機研磨材が正のゼータ電位を有する、請求項2に記載の方法。
- 前記研磨組成物が約2000μS/cm又はそれ未満の導電率を有する、請求項2に記載の方法。
- 前記無機研磨材が、研磨パッドの研磨表面に固定されている、請求項2に記載の方法。
- 前記無機研磨材が、アルミナ、セリア、シリカ、チタニア、クロミア、ジルコニア、炭化ケイ素、窒化ホウ素、マグネシア、酸化鉄、これらの共と生成される生成物、及びそれらの組み合わせからなる群より選択される、請求項2に記載の方法。
- 前記無機研磨材がセリアである、請求項22に記載の方法。
- 前記研磨系が、約2重量%又はそれ未満の無機研磨材を含有している、請求項2に記載の方法。
- 前記研磨系が、約0.5重量%又はそれ未満の無機研磨材を含有している、請求項24に記載の方法。
- 前記研磨系が、少なくとも24時間にわたってコロイド状態で安定である、請求項2に記載の方法。
- 前記研磨系が、界面活性剤を更に含有している、請求項2に記載の方法。
- (a)約180nm又はそれ未満の平均粒径及び正のゼータ電位を有するセリア研磨材、
(b)アリールアミン、アミノアルコール、脂肪族アミン、複素環式アミン、ヒドロキサム酸、アミノカルボン酸、環状モノカルボン酸、不飽和モノカルボン酸、置換フェノール、スルホンアミド、チオール、これらの塩、及びそれらの組み合わせからなる群より選択され、且つpKa約3〜約9の官能基を有する、研磨添加剤、及び
(c)液体キャリヤ、
を含有しており、且つpHが約4〜約6である、化学機械的研磨系。 - 前記研磨添加剤が、pKa約4〜約9の官能基を有する、請求項28に記載の研磨系。
- (i)請求項28に記載の前記化学機械的研磨系を提供すること、(ii)二酸化ケイ素層及び窒化ケイ素層を有するシャロートレンチ分離基材を、前記化学機械的研磨系と接触させること、(iii)前記基材の少なくとも一部を削って、この基材を研磨すること、を含む、シャロートレンチ分離処理方法。
- (i)請求項28に記載の前記化学機械的研磨系を提供すること、(ii)層間絶縁層を、前記化学機械的研磨系と接触させること、並びに(iii)前記層間絶縁デバイスの少なくとも一部を削って、この層間絶縁デバイス又はプリメタル絶縁デバイスを研磨すること、を含む、層間誘電体デバイス又はプリメタル絶縁デバイスの研磨方法。
- (i)請求項29に記載の前記化学機械的研磨系を提供すること、(ii)二酸化ケイ素層及び窒化ケイ素層を有するシャロートレンチ分離基材を、前記化学機械的研磨系と接触させること、並びに(iii)前記基材の少なくとも一部を削って、この基材を研磨すること、を含む、シャロートレンチ分離処理方法。
- (i)請求項29に記載の前記化学機械的研磨系を提供すること、(ii)層間絶縁層を、前記化学機械的研磨系と接触させること、並びに(iii)前記層間絶縁デバイスの少なくとも一部を削って、この層間絶縁デバイス又はプリメタル絶縁デバイスを研磨することを含む、層間絶縁デバイス又はプリメタル絶縁デバイスの研磨方法。
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PCT/US2004/002908 WO2004069947A1 (en) | 2003-02-03 | 2004-02-02 | Method of polishing a silicon-containing dielectric |
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KR (2) | KR101281967B1 (ja) |
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Cited By (33)
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JP2008147651A (ja) * | 2006-12-05 | 2008-06-26 | Cheil Industries Inc | シリコンウエハの最終研磨用スラリー組成物、及びそれを用いたシリコンウエハの最終研磨方法 |
JP2009160680A (ja) * | 2007-12-29 | 2009-07-23 | Hoya Corp | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
JP2009218558A (ja) * | 2008-02-12 | 2009-09-24 | Hitachi Chem Co Ltd | Cmp用研磨液、基板の研磨方法及び電子部品 |
JP2009231795A (ja) * | 2008-02-27 | 2009-10-08 | Hitachi Chem Co Ltd | 研磨液 |
JP2009297814A (ja) * | 2008-06-11 | 2009-12-24 | Shin-Etsu Chemical Co Ltd | 合成石英ガラス基板用研磨剤 |
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Also Published As
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US20060144824A1 (en) | 2006-07-06 |
US20040152309A1 (en) | 2004-08-05 |
KR20050098288A (ko) | 2005-10-11 |
EP1601735B1 (en) | 2019-09-11 |
KR20120006563A (ko) | 2012-01-18 |
CN1742066B (zh) | 2015-10-21 |
CN1742066A (zh) | 2006-03-01 |
US20060196848A1 (en) | 2006-09-07 |
US7442645B2 (en) | 2008-10-28 |
US20090029633A1 (en) | 2009-01-29 |
WO2004069947A1 (en) | 2004-08-19 |
TWI283022B (en) | 2007-06-21 |
EP1601735A1 (en) | 2005-12-07 |
JP4927526B2 (ja) | 2012-05-09 |
TW200426932A (en) | 2004-12-01 |
US7071105B2 (en) | 2006-07-04 |
KR101281967B1 (ko) | 2013-07-03 |
US8486169B2 (en) | 2013-07-16 |
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