JP2015528036A - 窒化ケイ素材料の選択的な研磨のための組成物および方法 - Google Patents
窒化ケイ素材料の選択的な研磨のための組成物および方法 Download PDFInfo
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- JP2015528036A JP2015528036A JP2015521754A JP2015521754A JP2015528036A JP 2015528036 A JP2015528036 A JP 2015528036A JP 2015521754 A JP2015521754 A JP 2015521754A JP 2015521754 A JP2015521754 A JP 2015521754A JP 2015528036 A JP2015528036 A JP 2015528036A
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- 235000011037 adipic acid Nutrition 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 1
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- NGEAJXXGUZQCPN-UHFFFAOYSA-M methyl 1-ethylpyridin-1-ium-4-carboxylate;iodide Chemical compound [I-].CC[N+]1=CC=C(C(=O)OC)C=C1 NGEAJXXGUZQCPN-UHFFFAOYSA-M 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- FIKAKWIAUPDISJ-UHFFFAOYSA-L paraquat dichloride Chemical compound [Cl-].[Cl-].C1=C[N+](C)=CC=C1C1=CC=[N+](C)C=C1 FIKAKWIAUPDISJ-UHFFFAOYSA-L 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- HJKYXKSLRZKNSI-UHFFFAOYSA-I pentapotassium;hydrogen sulfate;oxido sulfate;sulfuric acid Chemical compound [K+].[K+].[K+].[K+].[K+].OS([O-])(=O)=O.[O-]S([O-])(=O)=O.OS(=O)(=O)O[O-].OS(=O)(=O)O[O-] HJKYXKSLRZKNSI-UHFFFAOYSA-I 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229920000885 poly(2-vinylpyridine) Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- 150000004892 pyridazines Chemical class 0.000 description 1
- AOJFQRQNPXYVLM-UHFFFAOYSA-N pyridin-1-ium;chloride Chemical compound [Cl-].C1=CC=[NH+]C=C1 AOJFQRQNPXYVLM-UHFFFAOYSA-N 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical group C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- OUXVDHDFKSWBOW-UHFFFAOYSA-N tetraazanium sulfonatooxy sulfate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O.[O-]S(=O)(=O)OOS([O-])(=O)=O OUXVDHDFKSWBOW-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- RRHXZLALVWBDKH-UHFFFAOYSA-M trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)OCC[N+](C)(C)C RRHXZLALVWBDKH-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229940116269 uric acid Drugs 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
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- C09K3/1409—Abrasive particles per se
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
この例は、カチオン性ポリマーおよび非ポリマーのUNH化合物の窒化ケイ素の除去、ポリケイ素、および酸化ケイ素への効果を具体的に示す。
ポリ(4−ビニルピリジン)を有さない追加の調合物の評価を、POLITEX(商標)パッドを用いたMirra研磨機で、3psiの下方圧力、101回転/分の研磨ヘッド速度(HS)、100回転/分のプラテン速度(PS)、および150mL/分のスラリー流量で行った。それぞれの試験された組成物を、例1の脱イオン水中焼成セリアを用いて調製し、そしてこの組成物はpH4を有した。調合物の種々の成分の濃度を表3に示し、一方、窒化物、ポリケイ素および酸化物で観察されたÅ/分での研磨速度を表4に示す。表3および表4のそれぞれにおいて、略称は例1で使用されたものと同じである。
この例は、本発明のCMP組成物中に、PEG1450に加えてEO/POブロックコポリマーを含む効果を具体的に示す。評価を、D100パッドを用いたMirra研磨機で、3psiの下方圧力、101回転/分の研磨ヘッド速度(HS)、100回転/分のプラテン速度(PS)、および150mL/分のスラリー流量で行った。それぞれの試験された組成物を、例1におけるように脱イオン水中焼成セリアを用いて調製し、そしてこの組成物は、例えば3Kおよび3L(これらはpH2.3を有した)を除きpH4を有した。調合物の種々の成分の濃度を表5中に示し、一方、窒化物、ポリケイ素および酸化物でのÅ/分での観察された研磨速度を表6に示した。表5および表6のそれぞれにおいて、L31は、PLURONIC(商標) L31界面活性剤(BASF)をいい、そして残りの略称は例1で使用されたものと同じである。
Claims (32)
- 化学的機械的研磨(CMP)プロセスにおいて窒化ケイ素含有基材を研磨するのに好適な酸性水性研磨組成物であって、
(a)0.01wt%〜10wt%の少なくとも1種の粒子状セリア研削剤と、
(b)10ppm〜100、000ppmの少なくとも1種の非ポリマー不飽和窒素複素環化合物と、
(c)0ppm〜100、000ppmの少なくとも1種のカチオン性ポリマーと、
(d)0ppm〜200、000ppmの少なくとも1種のポリオキシアルキレンポリマーと、
(e)それらのための水性キャリアーと、
を含む組成物。 - 該研削剤が、該組成物中に0.05wt%〜5wt%の範囲の濃度で存在する、請求項1に記載の組成物。
- 該カチオン性ポリマーが、該組成物中に10ppm〜10、000ppmの範囲の濃度で存在する、請求項1に記載の組成物。
- 該非ポリマー不飽和窒素複素環化合物が、該組成物中に10ppm〜10、000ppmの範囲の濃度で存在する、請求項1に記載の組成物。
- 該ポリオキシアルキレンポリマーが、該組成物中に200ppm〜100、000ppmの範囲の濃度で存在する、請求項1に記載の組成物。
- 該ポリオキシアルキレンポリマーが、ポリ(エチレングリコール)ポリマー、ポリ(エチレングリコール)−コ−ポリ(プロピレングリコール)ブロックコポリマー、またはそれらの組み合わせを含む、請求項5に記載の組成物。
- 該ポリオキシアルキレンポリマーが、300〜1500の範囲のエチレングリコールモノマー単位の平均数を含むポリ(エチレングリコール)ポリマーを含む、請求項5に記載の組成物。
- 該カチオン性ポリマーが、第四級アンモニウム置換ポリマーを含む、請求項1に記載の組成物。
- 該カチオン性ポリマーが、ポリ(ビニルピリジン)ポリマー、第四級アンモニウム置換アクリレートポリマー、第四級アンモニウム置換メタクリレートポリマー、または先のカチオン性ポリマーのいずれかの組み合わせを含む、請求項1に記載の組成物。
- 該非ポリマー不飽和窒素複素環化合物が、ピリジン化合物を含む、請求項1に記載の組成物。
- 該非ポリマー不飽和窒素複素環化合物が、ピリジニウム化合物を含む、請求項1に記載の組成物。
- 該非ポリマー不飽和窒素複素環化合物が、4、4’−トリメチレンジピリジンを含む、請求項1に記載の組成物。
- 該セリア研削剤が、焼成セリアを含む、請求項1に記載の組成物。
- 該水性キャリアーが、脱イオン水を含む、請求項1に記載の組成物。
- 該組成物が、2〜6の範囲のpHを有する、請求項1に記載の組成物。
- 化学的機械的研磨(CMP)プロセスにおけるポリケイ素に対し窒化ケイ素の選択的な除去に好適な酸性水性研磨組成物であって、
(a)0.05wt%〜5wt%の少なくとも1種の粒子状セリア研削剤と、
(b)10ppm〜10、000ppmの4、4’−トリメチレンジピリジンと、
(c)ポリ(ビニルピリジン)ポリマー、第四級アンモニウム置換アクリレートポリマー、第四級アンモニウム置換メタクリレートポリマー、または先のカチオン性ポリマーのいずれかの組み合わせからなる群から選択される、0〜10、000ppmの少なくとも1種のカチオン性ポリマーと、
(d)ポリ(エチレングリコール)ポリマー、ポリ(エチレングリコール)−コ−ポリ(プロピレングリコール)ブロックコポリマー、またはそれらの組み合わせから選択される、0ppm〜20、000ppmの少なくとも1種のポリオキシアルキレンポリマーと、
(e)それらのための水性キャリアーと、
を含み、
該組成物が3〜5の範囲のpHを有する、組成物。 - 基材の表面を研磨するための化学的機械的研磨(CMP)方法であって、該方法が請求項1に記載の組成物を用いて該基材の該表面を研削することを含み、使用される該組成物が、0.01wt%〜2wt%の該セリア研削剤と、10ppm〜1000ppmの該非ポリマー不飽和窒素複素環化合物と、0ppm〜1000ppmの該カチオン性ポリマーと、0ppm〜2000ppmの該ポリオキシアルキレンポリマーとを含む、方法。
- 該基材の該表面が、窒化ケイ素、ポリケイ素、および二酸化ケイ素を含む、請求項17に記載の方法。
- 基材の表面を研磨するための化学的機械的研磨(CMP)方法であって、該方法が請求項14に記載の組成物を用いて該基材の該表面を研削することを含み、使用される該組成物が、0.01wt%〜2wt%の該セリア研削剤と、10ppm〜1000ppmの該非ポリマー不飽和窒素複素環化合物と、0ppm〜1000ppmの該カチオン性ポリマーと、0ppm〜2000ppmの該ポリオキシアルキレンポリマーを含む、方法。
- 該基材の該表面が、窒化ケイ素、ポリケイ素、および二酸化ケイ素を含む、請求項19に記載の方法。
- ポリケイ素の除去に対して基材の表面から窒化ケイ素を選択的に除去するための化学的機械的研磨(CMP)方法であって、該方法が、
(a)窒化ケイ素およびポリケイ素含有基材の表面と、研磨パッドおよび酸性水性CMP組成物とを接触させることと、
(b)該研磨パッドと該基材との間の該表面と該CMP組成物の一部分との接触を該表面から窒化ケイ素を研削するのに充分な時間の間維持しながら、該研磨パッドと該基材との間で相対的な動きを生じさせることと、
の各ステップを含み、
ここで該CMP組成物が、
(i)0.01wt%〜2wt%の少なくとも1種の粒子状セリア研削剤と、
(ii)10ppm〜1000ppmの少なくとも1種の非ポリマー不飽和窒素複素環化合物と、
(iii)0ppm〜1000ppmの少なくとも1種のカチオン性ポリマーと、
(iv)0ppm〜2000ppmの少なくとも1種のポリオキシアルキレンポリマーと、
(v)それらのための水性キャリアーと、
を含む、方法。 - 該ポリオキシアルキレンポリマーが、該組成物中に200ppm〜2000ppmの範囲の濃度で存在する、請求項21に記載の方法。
- 該ポリオキシアルキレンポリマーが、ポリ(エチレングリコール)ポリマー、ポリ(エチレングリコール)−コ−ポリ(プロピレングリコール)ブロックコポリマー、またはそれらの組み合わせを含む、請求項22に記載の方法。
- 該ポリオキシアルキレンポリマーが、300〜1500の範囲のエチレングリコールモノマー単位の平均数を含むポリ(エチレングリコール)ポリマーを含む、請求項23に記載の方法。
- 該カチオン性ポリマーが、第四級アンモニウム置換ポリマーを含む、請求項21に記載の方法。
- 該カチオン性ポリマーが、ポリ(ビニルピリジン)ポリマー、第四級アンモニウム置換アクリレートポリマー、第四級アンモニウム置換メタクリレートポリマー、または先のカチオン性ポリマーのいずれかの組み合わせを含む、請求項21に記載の方法。
- 該非ポリマー不飽和窒素複素環化合物が、ピリジン化合物を含む、請求項21に記載の方法。
- 該非ポリマー不飽和窒素複素環化合物が、ピリジニウム化合物を含む、請求項21に記載の方法。
- 該非ポリマー不飽和窒素複素環化合物が、4、4’−トリメチレンジピリジンを含む、請求項21に記載の方法。
- 該セリア研削剤が、焼成セリアを含む、請求項21に記載の方法。
- 該CMP組成物が、2〜6の範囲のpHを有する、請求項21に記載の方法。
- 該基材の該表面が、二酸化ケイ素をまた含む、請求項21に記載の方法。
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CN108822737B (zh) | 2021-06-22 |
CN108822737A (zh) | 2018-11-16 |
US9633863B2 (en) | 2017-04-25 |
EP2872585A1 (en) | 2015-05-20 |
EP2872585A4 (en) | 2016-04-20 |
WO2014011678A1 (en) | 2014-01-16 |
US20140017892A1 (en) | 2014-01-16 |
KR102192003B1 (ko) | 2020-12-16 |
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