JP5792889B2 - 窒化ケイ素材料の選択的研磨のための組成物および方法 - Google Patents
窒化ケイ素材料の選択的研磨のための組成物および方法 Download PDFInfo
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- JP5792889B2 JP5792889B2 JP2014505325A JP2014505325A JP5792889B2 JP 5792889 B2 JP5792889 B2 JP 5792889B2 JP 2014505325 A JP2014505325 A JP 2014505325A JP 2014505325 A JP2014505325 A JP 2014505325A JP 5792889 B2 JP5792889 B2 JP 5792889B2
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- vinylpyridine
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- OUXVDHDFKSWBOW-UHFFFAOYSA-N tetraazanium sulfonatooxy sulfate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O.[O-]S(=O)(=O)OOS([O-])(=O)=O OUXVDHDFKSWBOW-UHFFFAOYSA-N 0.000 description 1
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- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Description
この例は、窒化ケイ素、多結晶シリコン、および酸化ケイ素の除去への、カチオン性ポリマーの効果を示している。
例1と同様の評価をMirra研磨機で行った。驚くべきことに、Mirraでの試験で観察された多結晶シリコンの除去速度は、相当に不均一(ウエハ内で)であり、非常に高い多結晶シリコン除去領域と非常に低い多結晶シリコン除去領域を示した。ポリオキシアルキレンポリマー、例えばPEGまたはPEG−PPG−PEG共重合体、の添加は、驚くべきことに、Mirra研磨機での多結晶シリコン除去の均一性を向上させ、そして、所望の、一貫して低い、多結晶シリコン除去速度を与えた。種々のポリオキシアルキレンポリマーを含む組成物を調整し、そして以下の条件下で評価した:上記のように現場で調整したD100パッド、3psiのDF、100/101rpmのPS/HS、および150mL/分のスラリー流量。これらの組成物のそれぞれは、0.2質量%のANP焼成セリア、30ppmのポリ(4−ビニルピリジン)、および15ppmのポリ(メタクリロイルオキシエチルトリメチルアンモニウムクロリド)を、pH4で、水中に含んでいた。ポリオキシアルキレン添加剤および観察された除去速度を表3中に示した(PL31は、BASFのPLURONIC(商標)L31であり、ポリ(エチレングリコール)末端ブロックを有するポリ(プロピレングリコール)ブロック共重合体、PEG−PPG−PEGである)。
0.1、0.2および0.3質量%の焼成されたセリア、0、30、60、および90ppmのポリ(4−ビニルピリジン)、0、15、および30ppmのポリ(メタクリロイルオキシエチルトリメチルアンモニウムクロリド)(Alco 4773)、ならびに0、800、および1500ppmのPEG−1450を含む更なる水性組成物を、Mirra研磨機で、窒化ケイ素、多結晶シリコン、およびPETEOSのブランケットウエハを研磨することによって評価した(3psiのDF、3M A165調整剤で現場で調整したD100パッド、100/101rpmのPS/HS、150mL/分のスラリー流量)。これらの組成物の配合を表4中に示した。
例3から選択した組成物(すなわち、3B、3C、3Fおよび3J)を、REFLEXION(商標)研磨機(すなわち、例1で用いたように)で、窒化ケイ素、多結晶シリコン、およびPETEOSの300mmブランケットウエハを、以下の条件下で研磨することによって評価した:2psiのDF、Seasol調整剤を備えたIC1010研磨パッド、100/85rpmのPS/HS、200mL/分のスラリー流量。研磨結果を表6中に示し、そして図1中に図示した。
Claims (28)
- 化学機械研磨(CMP)プロセスでの窒化ケイ素含有基材の研磨に適した酸性の水性研磨組成物であって、
(a)0.01〜10質量%の粒子状焼成セリア研磨剤、
(b)(a)ポリ(ビニルピリジン)ポリマーおよび(b)ポリ(ビニルピリジン)ポリマーと四級アンモニウム置換ポリマーとの混合物からなる群から選ばれた、10〜100000ppmの少なくとも1種のカチオン性ポリマー、
(c)10〜200000ppmのポリオキシアルキレンポリマー、ならびに、
(d)それらのための水性キャリア、
を含んでなり、該組成物が、3〜6の範囲のpHを有する、組成物。 - 前記研磨剤が、前記組成物中に、0.05〜5質量%の範囲の濃度で存在している、請求項1記載の組成物。
- 前記少なくとも1種のカチオン性ポリマーが、前記組成物中に、15〜10000ppmの範囲の濃度で存在している、請求項1記載の組成物。
- 前記ポリオキシアルキレンポリマーが、前記組成物中に、200〜100000ppmの範囲の濃度で存在している、請求項1記載の組成物。
- 前記ポリオキシアルキレンポリマーが、ポリ(エチレングリコール)ポリマー、ポリ(エチレングリコール)−コ−ポリ(プロピレングリコール)ブロック共重合体、またはそれらの組合わせを含む、請求項1記載の組成物。
- 前記ポリオキシアルキレンポリマーが、300〜1500の範囲の平均の数のエチレングリコールモノマー単位を含むポリ(エチレングリコール)ポリマーを含む、請求項1記載の組成物。
- 前記四級アンモニウム置換ポリマーが、四級アンモニウム置換アクリレートまたはメタクリレートポリマーを含む、請求項1記載の組成物。
- 前記ポリ(ビニルピリジン)ポリマーが、ポリ(4−ビニルピリジン)を含む、請求項1記載の組成物。
- 前記ポリ(ビニルピリジン)ポリマーが、ポリ(2−ビニルピリジン)を含む、請求項1記載の組成物。
- 前記ポリ(ビニルピリジン)ポリマーが、少なくとも1種のビニルピリジンモノマー、ならびにノニオン性モノマーおよびカチオン性モノマーからなる群から選ばれた少なくとも1種のコモノマーを含む共重合体である、請求項1記載の組成物。
- 前記少なくとも1種のカチオン性ポリマーが、ポリ(ビニルピリジン)ポリマーおよび四級アンモニウム置換アクリレートもしくはメタクリレートポリマーの組合わせを含む、請求項1記載の組成物。
- 前記少なくとも1種のカチオン性ポリマーが、10〜90ppmのポリ(ビニルピリジン)ポリマーおよび15〜100ppmのポリ(メタクリロイルオキシエチルトリメチルアンモニウムハライド)ポリマーの組合わせを含む、請求項1記載の組成物。
- 前記水性担体が、脱イオン水を含む、請求項1記載の組成物。
- 基材の表面を研摩するための化学機械研磨(CMP)方法であって、該方法は、請求項1記載の組成物で該基材の該表面を研摩することを含み、該組成物が、使用の際に、0.01〜2質量%の前記セリア研磨剤、10〜1000ppmの前記少なくとも1種のカチオン性ポリマー、および10〜2000ppmの前記ポリオキシアルキレンポリマーを含んでいる、方法。
- 前記基材の前記表面が、窒化ケイ素、多結晶シリコン、および二酸化ケイ素を含む、請求項14記載の方法。
- 化学機械研磨(CMP)プロセスにおいて多結晶シリコンに対する窒化ケイ素の選択的な除去に適する酸性の水性研磨組成物であって、該組成物が、
(a)0.05〜5質量%の粒子状焼成セリア研磨剤、
(b)(a)ポリ(ビニルピリジン)ポリマーおよび(b)ポリ(ビニルピリジン)ポリマーと四級アンモニウム置換ポリマーとの混合物からなる群から選ばれた、15〜10000ppmの少なくとも1種のカチオン性ポリマー、
(c)ポリ(エチレングリコール)ポリマー、ポリ(エチレングリコール)−コ−ポリ(プロピレングリコール)ブロック共重合体、またはそれらの組合わせから選ばれた、200〜100000ppmのポリオキシアルキレンポリマー、ならびに、
(d)それらのための水性キャリア、
を含み、該組成物が3〜6の範囲のpHを有する組成物。 - 前記少なくとも1種のカチオン性ポリマーが、10〜90ppmのポリ(ビニルピリジン)ポリマーおよび15〜100ppmのポリ(メタクリロイルオキシエチルトリメチルアンモニウムハライド)ポリマーの組合わせを含む、請求項16記載の組成物。
- 前記ポリ(エチレングリコール)ポリマーが、200〜2000の範囲の平均の数のエチレングリコールモノマー単位を含む、請求項16記載の組成物。
- 基材の表面を研磨するための化学機械研磨(CMP)方法であって、該方法は、請求項16記載の組成物で該基材の該表面を研摩することを含み、該組成物は、使用の際に、0.05〜0.5質量%の前記セリア研磨剤、15〜100ppmの前記少なくとも1種のカチオン性ポリマー、および200〜1000ppmの前記ポリオキシアルキレンポリマーを含んでいる、方法。
- 前記基材の前記表面が、窒化ケイ素、多結晶シリコン、および二酸化ケイ素を含む、請求項19記載の方法。
- 基材の表面からの、多結晶シリコンの除去に優先しての窒化ケイ素の選択的な除去のための化学機械研磨方法であって、該方法は以下の工程、
(a)窒化ケイ素および多結晶シリコン含有基材の表面を、研磨パッドおよび酸性の水性CMP組成物に接触させる工程、および
(b)該CMP組成物の一部の、該パッドと該基材の間の該表面との接触を維持しながら、該基材から窒化ケイ素を研摩するのに十分な時間、該研磨パッドと該基材の間に相対的な動きを生じさせる工程
を含んでなり、該CMP組成物が、
(i)0.01〜2質量%の粒子状焼成セリア研磨剤、
(ii)(a)ポリ(ビニルピリジン)ポリマーおよび(b)ポリ(ビニルピリジン)ポリマーと四級アンモニウム置換ポリマーとの混合物からなる群から選ばれた、10〜1000ppmの少なくとも1種のカチオン性ポリマー、
(iii)10〜2000ppmのポリオキシアルキレンポリマー、ならびに、
(iv)それらのための水性キャリア、
を含む、方法。 - 前記CMP組成物の前記少なくとも1種のカチオン性ポリマーが、ポリ(ビニルピリジン)ポリマーおよび四級アンモニウム置換ポリマーの組合わせを含む、請求項21記載の方法。
- 前記四級アンモニウム置換ポリマーが、四級アンモニウム置換アクリレートまたはメタクリレートポリマーを含む、請求項21記載の方法。
- 前記四級アンモニウム置換ポリマーが、ポリ(メタクリロイルオキシエチルトリメチルアンモニウムハライド)ポリマーを含む、請求項21記載の方法。
- 前記CMP組成物の前記少なくとも1種のカチオン性ポリマーが、ポリ(2−ビニルピリジン)ポリマー、ポリ(4−ビニルピリジン)ポリマー、ならびに少なくとも1種のビニルピリジンモノマーおよびノニオン性モノマーとカチオン性モノマーからなる群から選ばれた少なくとも1種のコモノマーを含む共重合体からなる群から選ばれた少なくとも1種のポリマーを含む、請求項21記載の方法。
- 前記CMP組成物の前記ポリオキシアルキレンポリマーが、ポリ(エチレングリコール)ポリマー、ポリ(エチレングリコール)−コ−ポリ(プロピレングリコール)ブロック共重合体、またはそれらの組合わせを含む、請求項21記載の方法。
- 前記CMP組成物が、3〜6の範囲のpHを有する、請求項21記載の方法。
- 前記基材の前記表面が、更に二酸化ケイ素を含む、請求項21記載の方法。
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US8859428B2 (en) | 2012-10-19 | 2014-10-14 | Air Products And Chemicals, Inc. | Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof |
US8906252B1 (en) * | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
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WO2009042072A2 (en) * | 2007-09-21 | 2009-04-02 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
EP2329519B1 (en) * | 2008-09-26 | 2013-10-23 | Rhodia Opérations | Abrasive compositions for chemical mechanical polishing and methods for using same |
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