DE69830676D1 - CMP Suspension mit hoher Selektivität - Google Patents
CMP Suspension mit hoher SelektivitätInfo
- Publication number
- DE69830676D1 DE69830676D1 DE69830676T DE69830676T DE69830676D1 DE 69830676 D1 DE69830676 D1 DE 69830676D1 DE 69830676 T DE69830676 T DE 69830676T DE 69830676 T DE69830676 T DE 69830676T DE 69830676 D1 DE69830676 D1 DE 69830676D1
- Authority
- DE
- Germany
- Prior art keywords
- high selectivity
- cmp suspension
- cmp
- suspension
- selectivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3502397P | 1997-01-10 | 1997-01-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69830676D1 true DE69830676D1 (de) | 2005-08-04 |
Family
ID=21880142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69830676T Expired - Lifetime DE69830676D1 (de) | 1997-01-10 | 1998-01-09 | CMP Suspension mit hoher Selektivität |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0853110B1 (de) |
JP (1) | JPH10233378A (de) |
DE (1) | DE69830676D1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
CN1422314A (zh) | 2000-04-11 | 2003-06-04 | 卡伯特微电子公司 | 用于优先除去氧化硅的系统 |
DE10063492A1 (de) * | 2000-12-20 | 2002-06-27 | Bayer Ag | Verfahren zum chemisch-mechanischen Polieren von Isolationsschichten nach der STI-Technik bei erhöhten Temperaturen |
JP2002346912A (ja) * | 2001-05-18 | 2002-12-04 | Nippon Sheet Glass Co Ltd | 情報記録媒体用ガラス基板及びその製造方法 |
KR100444302B1 (ko) * | 2001-12-29 | 2004-08-11 | 주식회사 하이닉스반도체 | 반도체 소자 제조방법 |
US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
JP5481166B2 (ja) * | 2009-11-11 | 2014-04-23 | 株式会社クラレ | 化学的機械的研磨用スラリー |
KR101359092B1 (ko) * | 2009-11-11 | 2014-02-05 | 가부시키가이샤 구라레 | 화학적 기계적 연마용 슬러리 및 그것을 이용하는 기판의 연마 방법 |
JP5321430B2 (ja) * | 2009-12-02 | 2013-10-23 | 信越半導体株式会社 | シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
HU164439B (de) * | 1972-06-14 | 1974-02-28 | ||
JPS5935429A (ja) * | 1982-08-12 | 1984-02-27 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 半導体ウエハの製造方法 |
-
1998
- 1998-01-09 EP EP19980300159 patent/EP0853110B1/de not_active Expired - Lifetime
- 1998-01-09 DE DE69830676T patent/DE69830676D1/de not_active Expired - Lifetime
- 1998-01-12 JP JP425798A patent/JPH10233378A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH10233378A (ja) | 1998-09-02 |
EP0853110A1 (de) | 1998-07-15 |
EP0853110B1 (de) | 2005-06-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |