SG10201605686XA - Polishing Composition And Polishing Method Using The Same - Google Patents
Polishing Composition And Polishing Method Using The SameInfo
- Publication number
- SG10201605686XA SG10201605686XA SG10201605686XA SG10201605686XA SG10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- same
- composition
- polishing composition
- polishing method
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008023229 | 2008-02-01 | ||
| JP2008151969 | 2008-06-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201605686XA true SG10201605686XA (en) | 2016-08-30 |
Family
ID=40912840
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013007075A SG188090A1 (en) | 2008-02-01 | 2009-01-29 | Polishing composition and polishing method using the same |
| SG10201605686XA SG10201605686XA (en) | 2008-02-01 | 2009-01-29 | Polishing Composition And Polishing Method Using The Same |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013007075A SG188090A1 (en) | 2008-02-01 | 2009-01-29 | Polishing composition and polishing method using the same |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10144849B2 (en) |
| EP (1) | EP2237311A4 (en) |
| JP (2) | JPWO2009096495A1 (en) |
| KR (2) | KR101564673B1 (en) |
| CN (2) | CN102084465A (en) |
| SG (2) | SG188090A1 (en) |
| TW (1) | TWI554600B (en) |
| WO (1) | WO2009096495A1 (en) |
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| US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| JP5795843B2 (en) | 2010-07-26 | 2015-10-14 | 東洋鋼鈑株式会社 | Manufacturing method of hard disk substrate |
| CN102533122B (en) * | 2010-12-28 | 2016-01-20 | 安集微电子（上海）有限公司 | A kind of polishing slurries for polishing titaniferous base material |
| JP6411708B2 (en) * | 2011-06-14 | 2018-10-24 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP6407503B2 (en) * | 2011-06-14 | 2018-10-17 | 株式会社フジミインコーポレーテッド | Polishing composition |
| EP2722872A4 (en) * | 2011-06-14 | 2015-04-29 | Fujimi Inc | Polishing composition |
| SG11201401309PA (en) * | 2011-10-24 | 2014-06-27 | Fujimi Inc | Composition for polishing purposes, polishing method using same, and method for producing substrate |
| WO2014034425A1 (en) * | 2012-08-31 | 2014-03-06 | 株式会社 フジミインコーポレーテッド | Polishing composition and method for producing substrate |
| WO2014126051A1 (en) * | 2013-02-13 | 2014-08-21 | 株式会社フジミインコーポレーテッド | Polishing composition, production method for polishing composition, and production method for polished article |
| EP3007213B1 (en) * | 2013-06-07 | 2020-03-18 | Fujimi Incorporated | Use of a composition for silicon wafer polishing |
| WO2015068672A1 (en) * | 2013-11-08 | 2015-05-14 | 東亞合成株式会社 | Wetting agent and polishing composition for semiconductor |
| CN105940450B (en) * | 2014-01-31 | 2019-07-02 | Hoya株式会社 | The manufacturing method of substrate for magnetic disc and the manufacturing method of disk |
| JP6376599B2 (en) * | 2014-12-26 | 2018-08-22 | 花王株式会社 | Silica dispersion |
| WO2016132951A1 (en) * | 2015-02-19 | 2016-08-25 | 株式会社フジミインコーポレーテッド | Polishing composition |
| TWI654293B (en) | 2015-03-17 | 2019-03-21 | 德商福斯石油股份公司 | Additive compositions and industrial process fluids |
| JP6393228B2 (en) * | 2015-03-31 | 2018-09-19 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing polished article |
| CN107735471B (en) * | 2015-07-10 | 2021-02-12 | 费罗公司 | Slurry compositions and additives for polishing organic polymer-based ophthalmic substrates and methods |
| KR102463863B1 (en) * | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | Polishing compositions and methods of manufacturing semiconductor devices using the same |
| US9293339B1 (en) * | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
| JP6728939B2 (en) * | 2016-04-27 | 2020-07-22 | 日立化成株式会社 | Abrasive, abrasive set, and method for polishing substrate |
| WO2018055985A1 (en) * | 2016-09-23 | 2018-03-29 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing method in which same is used, and method for producing semiconductor substrate |
| WO2018131341A1 (en) * | 2017-01-11 | 2018-07-19 | 株式会社フジミインコーポレーテッド | Polishing composition |
| KR102575250B1 (en) * | 2017-02-17 | 2023-09-06 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition, manufacturing method thereof, and polishing method using the polishing composition |
| WO2018168206A1 (en) | 2017-03-14 | 2018-09-20 | 株式会社フジミインコーポレーテッド | Polishing composition, production method therefor, and polishing method using polishing composition, and production method for substrate |
| EP3613822A4 (en) * | 2017-04-17 | 2020-12-23 | Nissan Chemical Corporation | Polishing composition containing amphoteric surfactant |
| CN109971358A (en) * | 2017-12-27 | 2019-07-05 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid |
| CN109971356A (en) | 2017-12-27 | 2019-07-05 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid |
| JP7128005B2 (en) * | 2018-03-26 | 2022-08-30 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP7237933B2 (en) * | 2018-03-28 | 2023-03-13 | 株式会社フジミインコーポレーテッド | Polishing composition |
| US11111435B2 (en) * | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
| CN111378377A (en) * | 2018-12-29 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN111378380B (en) * | 2018-12-29 | 2022-05-13 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| KR20230009927A (en) * | 2020-05-11 | 2023-01-17 | 주식회사 다이셀 | Detergent compositions and compositions for chemical mechanical polishing |
| CN114591686B (en) * | 2022-03-11 | 2023-05-26 | 万华化学集团电子材料有限公司 | Copper barrier layer chemical mechanical polishing solution and application thereof |
| CN115160211B (en) * | 2022-06-23 | 2023-11-03 | 温州大学 | Green synthesis method of isoindolinone compound |
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-
2009
- 2009-01-29 CN CN2009801033315A patent/CN102084465A/en active Pending
- 2009-01-29 CN CN201210587010.0A patent/CN103131330B/en not_active Expired - Fee Related
- 2009-01-29 KR KR1020107016583A patent/KR101564673B1/en active IP Right Grant
- 2009-01-29 SG SG2013007075A patent/SG188090A1/en unknown
- 2009-01-29 WO PCT/JP2009/051510 patent/WO2009096495A1/en active Application Filing
- 2009-01-29 SG SG10201605686XA patent/SG10201605686XA/en unknown
- 2009-01-29 KR KR1020147033389A patent/KR101564676B1/en active IP Right Grant
- 2009-01-29 EP EP09705253A patent/EP2237311A4/en not_active Withdrawn
- 2009-01-29 JP JP2009551585A patent/JPWO2009096495A1/en active Pending
- 2009-01-29 US US12/864,811 patent/US10144849B2/en active Active
- 2009-02-02 TW TW098103228A patent/TWI554600B/en active
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2013
- 2013-07-19 JP JP2013150331A patent/JP5695708B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101564676B1 (en) | 2015-11-02 |
| TWI554600B (en) | 2016-10-21 |
| KR20140146225A (en) | 2014-12-24 |
| JPWO2009096495A1 (en) | 2011-05-26 |
| KR20100121469A (en) | 2010-11-17 |
| CN102084465A (en) | 2011-06-01 |
| TW200946660A (en) | 2009-11-16 |
| US20100301014A1 (en) | 2010-12-02 |
| US10144849B2 (en) | 2018-12-04 |
| SG188090A1 (en) | 2013-03-28 |
| EP2237311A4 (en) | 2011-11-30 |
| KR101564673B1 (en) | 2015-10-30 |
| JP5695708B2 (en) | 2015-04-08 |
| WO2009096495A1 (en) | 2009-08-06 |
| JP2013251561A (en) | 2013-12-12 |
| CN103131330A (en) | 2013-06-05 |
| EP2237311A1 (en) | 2010-10-06 |
| CN103131330B (en) | 2015-09-23 |
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