CN101432384B - 含聚醚胺的抛光组合物 - Google Patents

含聚醚胺的抛光组合物 Download PDF

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Publication number
CN101432384B
CN101432384B CN2007800150365A CN200780015036A CN101432384B CN 101432384 B CN101432384 B CN 101432384B CN 2007800150365 A CN2007800150365 A CN 2007800150365A CN 200780015036 A CN200780015036 A CN 200780015036A CN 101432384 B CN101432384 B CN 101432384B
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China
Prior art keywords
compound
substrate
polishing
formula
combination
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CN2007800150365A
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Chinese (zh)
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CN101432384A (zh
Inventor
杰弗里·戴萨德
保罗·菲尼
斯里拉姆·安朱尔
蒂莫西·约翰斯
辛云表
王力
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CMC Materials LLC
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Cabot Corp
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Publication date
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Publication of CN101432384A publication Critical patent/CN101432384A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2007800150365A 2006-04-27 2007-04-18 含聚醚胺的抛光组合物 Active CN101432384B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/412,369 2006-04-27
US11/412,369 US7585340B2 (en) 2006-04-27 2006-04-27 Polishing composition containing polyether amine
PCT/US2007/009505 WO2007127121A1 (en) 2006-04-27 2007-04-18 Polishing composition containing polyether amine

Publications (2)

Publication Number Publication Date
CN101432384A CN101432384A (zh) 2009-05-13
CN101432384B true CN101432384B (zh) 2013-05-08

Family

ID=38646979

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800150365A Active CN101432384B (zh) 2006-04-27 2007-04-18 含聚醚胺的抛光组合物

Country Status (10)

Country Link
US (2) US7585340B2 (enExample)
EP (1) EP2029689B1 (enExample)
JP (1) JP5175270B2 (enExample)
KR (1) KR101371850B1 (enExample)
CN (1) CN101432384B (enExample)
IL (1) IL194461A (enExample)
MY (2) MY160946A (enExample)
SG (1) SG171622A1 (enExample)
TW (1) TWI351430B (enExample)
WO (1) WO2007127121A1 (enExample)

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US8157876B2 (en) * 2007-07-31 2012-04-17 Cabot Microelectronics Corporation Slurry composition containing non-ionic polymer and method for use
JP5220428B2 (ja) * 2008-02-01 2013-06-26 株式会社フジミインコーポレーテッド 研磨用組成物を用いた研磨方法
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
WO2012147312A1 (ja) * 2011-04-25 2012-11-01 バンドー化学株式会社 研磨フィルム
US8999193B2 (en) * 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
WO2014132641A1 (ja) * 2013-02-28 2014-09-04 株式会社フジミインコーポレーテッド コバルト除去のための研磨スラリー
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
JP6306383B2 (ja) * 2014-03-17 2018-04-04 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
CN104650740B (zh) * 2014-12-10 2017-07-14 深圳市力合材料有限公司 一种可实现快速稳定抛光的抛光液
CN107406721A (zh) * 2014-12-16 2017-11-28 巴斯夫欧洲公司 用于高效率抛光含锗基材的化学机械抛光(cmp)组合物
JP2016154208A (ja) * 2015-02-12 2016-08-25 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
EP3504356B1 (en) * 2016-08-24 2024-08-21 PPG Industries Ohio, Inc. Alkaline composition for treating metal substartes
US20180244955A1 (en) 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
US10106705B1 (en) * 2017-03-29 2018-10-23 Fujifilm Planar Solutions, LLC Polishing compositions and methods of use thereof
KR20180137167A (ko) * 2017-06-16 2018-12-27 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법
US10119048B1 (en) 2017-07-31 2018-11-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low-abrasive CMP slurry compositions with tunable selectivity
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
US12227673B2 (en) 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
CN113004799A (zh) 2019-12-19 2021-06-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
JP2024501226A (ja) * 2020-12-21 2024-01-11 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 化学機械研磨組成物及びその使用方法

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US6840971B2 (en) * 1999-08-13 2005-01-11 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use

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US6840971B2 (en) * 1999-08-13 2005-01-11 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use

Also Published As

Publication number Publication date
US20090289033A1 (en) 2009-11-26
EP2029689A4 (en) 2010-11-17
IL194461A (en) 2014-07-31
KR20090009264A (ko) 2009-01-22
US7585340B2 (en) 2009-09-08
TW200811276A (en) 2008-03-01
EP2029689B1 (en) 2019-05-15
KR101371850B1 (ko) 2014-03-07
CN101432384A (zh) 2009-05-13
TWI351430B (en) 2011-11-01
SG171622A1 (en) 2011-06-29
WO2007127121A1 (en) 2007-11-08
IL194461A0 (en) 2009-08-03
JP2009535816A (ja) 2009-10-01
US8741009B2 (en) 2014-06-03
EP2029689A1 (en) 2009-03-04
JP5175270B2 (ja) 2013-04-03
MY160946A (en) 2017-03-31
MY146591A (en) 2012-08-30
US20070251155A1 (en) 2007-11-01

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Address after: Illinois, USA

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