JP5519507B2 - アミノシランを用いて処理した研磨剤粒子を利用する研磨組成物および研磨方法 - Google Patents
アミノシランを用いて処理した研磨剤粒子を利用する研磨組成物および研磨方法 Download PDFInfo
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- JP5519507B2 JP5519507B2 JP2010525837A JP2010525837A JP5519507B2 JP 5519507 B2 JP5519507 B2 JP 5519507B2 JP 2010525837 A JP2010525837 A JP 2010525837A JP 2010525837 A JP2010525837 A JP 2010525837A JP 5519507 B2 JP5519507 B2 JP 5519507B2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 description 1
- TVWHNULVHGKJHS-UHFFFAOYSA-N Uric acid Natural products N1C(=O)NC(=O)C2NC(=O)NC21 TVWHNULVHGKJHS-UHFFFAOYSA-N 0.000 description 1
- NJSSICCENMLTKO-HRCBOCMUSA-N [(1r,2s,4r,5r)-3-hydroxy-4-(4-methylphenyl)sulfonyloxy-6,8-dioxabicyclo[3.2.1]octan-2-yl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)O[C@H]1C(O)[C@@H](OS(=O)(=O)C=2C=CC(C)=CC=2)[C@@H]2OC[C@H]1O2 NJSSICCENMLTKO-HRCBOCMUSA-N 0.000 description 1
- ZOKIJEBQDZFGMW-PSXMRANNSA-N [(2R)-2-[12-(4-azido-2-nitroanilino)dodecanoyloxy]-3-tetradecanoyloxypropyl] 2-(trimethylazaniumyl)ethyl phosphate Chemical compound CCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCCCCCCCCCCNc1ccc(cc1[N+]([O-])=O)N=[N+]=[N-] ZOKIJEBQDZFGMW-PSXMRANNSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 229920006322 acrylamide copolymer Polymers 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical group OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000008364 bulk solution Substances 0.000 description 1
- GGAUUQHSCNMCAU-UHFFFAOYSA-N butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)CC(C(O)=O)C(C(O)=O)CC(O)=O GGAUUQHSCNMCAU-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910001919 chlorite Inorganic materials 0.000 description 1
- 229910052619 chlorite group Inorganic materials 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 229940106681 chloroacetic acid Drugs 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229940001468 citrate Drugs 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000000701 coagulant Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- JCRDPEHHTDKTGB-UHFFFAOYSA-N dimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium;chloride Chemical compound Cl.CN(C)CCOC(=O)C(C)=C JCRDPEHHTDKTGB-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- QLBHNVFOQLIYTH-UHFFFAOYSA-L dipotassium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [K+].[K+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O QLBHNVFOQLIYTH-UHFFFAOYSA-L 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 229940009662 edetate Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical compound NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 description 1
- BLCTWBJQROOONQ-UHFFFAOYSA-N ethenyl prop-2-enoate Chemical compound C=COC(=O)C=C BLCTWBJQROOONQ-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 125000003630 glycyl group Chemical group [H]N([H])C([H])([H])C(*)=O 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 229940001447 lactate Drugs 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- ZWLPBLYKEWSWPD-UHFFFAOYSA-N o-toluic acid Chemical compound CC1=CC=CC=C1C(O)=O ZWLPBLYKEWSWPD-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 description 1
- 229920000962 poly(amidoamine) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920003009 polyurethane dispersion Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- BUFQZEHPOKLSTP-UHFFFAOYSA-M sodium;oxido hydrogen sulfate Chemical compound [Na+].OS(=O)(=O)O[O-] BUFQZEHPOKLSTP-UHFFFAOYSA-M 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 229940086735 succinate Drugs 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 125000005369 trialkoxysilyl group Chemical group 0.000 description 1
- XYNIDFXEDZHSHU-UHFFFAOYSA-M trimethyl-[2-(2-methylprop-2-enoylperoxy)ethyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)OOCC[N+](C)(C)C XYNIDFXEDZHSHU-UHFFFAOYSA-M 0.000 description 1
- 229940116269 uric acid Drugs 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
例2
例3
例4
例5
例6
例7
例8
例9
(態様)
(態様1)
基材を研磨するための化学的機械的研磨組成物であって:
(a)液体キャリアーと、
(b)該液体キャリアー中に懸濁された研削剤であって、該研削剤がコロイドシリカ粒子を含む、研削剤と、
(c)1〜4のpKaを有する少なくとも1種の酸性成分と、
(d)カチオン性ポリマーと、
を含んで成る、組成物であって、ここで、該研磨組成物は1〜3.5のpHを有する、組成物。
(態様2)
該コロイドシリカ粒子が、0.1wt%〜4wt%の量で、該研磨組成物中に存在する、態様1に記載の研磨組成物。
(態様3)
該コロイドシリカ粒子が、アミノシラン化合物を用いて処理された表面を有する、態様1に記載の研磨組成物。
(態様4)
該アミノシラン化合物が、ダイポーダルシラン、アミノプロピルトリアルコキシシラン、およびビス(トリメトキシシリルプロピル)アミンからなる群から選択される、態様3に記載の研磨組成物。
(態様5)
該アミノシラン化合物を用いて処理された表面を有する該コロイドシリカ粒子が、5mV以上のゼータ電位を有する、態様3に記載の研磨組成物。
(態様6)
該アミノシラン化合物が、該研磨組成物中に50ppm〜500ppmの量で存在する、態様3に記載の研磨組成物。
(態様7)
該少なくとも1種の酸性成分が、該研磨組成物中に500ppm〜3000ppmの量で存在する、態様1に記載の研磨組成物。
(態様8)
該少なくとも1種の酸性成分が、無機酸、カルボン酸、有機ホスホン酸、酸性複素環化合物、1−ヒドロキシエチリデン−1、1−ジホスホン酸、アミノトリ(メチレンホスホン酸)、それらの塩、およびそれらの組み合わせからなる群から選択される、態様1に記載の研磨組成物。
(態様9)
該研磨組成物が、1.5〜3.5のpHを有する、態様1に記載の研磨組成物。
(態様10)
該カチオン性ポリマーが、メタクリロイルオキシエチルトリメチルアンモニウムのホモポリマーまたはジアリルジメチルアンモニウムのいずれかである、態様1に記載の研磨組成物。
(態様11)
該カチオン性ポリマーが、該研磨組成物中に10ppm〜100ppmの量で存在する、態様1に記載の研磨組成物。
(態様12)
基材を化学的機械的に研磨する方法であって、該方法が:
(i)基材と
(a)液体キャリアーと、
(b)該液体キャリアー中に懸濁された研削剤であって、該研削剤が、コロイドシリカを含む、研削剤と、
(c)1〜4のpKaを有する少なくとも1種の酸性成分と、
(d)カチオン性ポリマーと、
を含む化学的機械的研磨組成物と、を接触させる工程と、
(ii)該研磨組成物を該基材に対して動かす工程と、
(iii)該基材を磨くために少なくとも該基材の一部分を摩耗させる工程と、
を含んで成る、方法。
(態様13)
該コロイドシリカ粒子が、0.1wt%〜4.0wt%の量で該研磨組成物中に存在する、態様12に記載の方法。
(態様14)
該コロイドシリカ粒子が、アミノシラン化合物を用いて処理された表面を有する、態様12に記載の方法。
(態様15)
該アミノシラン化合物を用いて処理された表面を有する該コロイドシリカ粒子が、5mV以上のゼータ電位を有する、態様14に記載の方法。
(態様16)
該アミノシラン化合物が、ダイポーダルシラン、アミノプロピルトリアルコキシシラン、およびビス(トリメトキシシリルプロピル)アミンからなる群から選択される、態様14に記載の方法。
(態様17)
該アミノシラン化合物が、該研磨組成物中に100ppm〜500ppmの量で存在する、態様14に記載の方法。
(態様18)
該少なくとも1種の酸性成分が、該研磨組成物中に500ppm〜3000ppmの量で存在する、態様14に記載の方法。
(態様19)
該少なくとも1種の酸性成分が、無機酸、カルボン酸、有機ホスホン酸、酸性複素環化合物、1−ヒドロキシエチリデン−1、1−ジホスホン酸、アミノトリ(メチレンホスホン酸)、それらの塩、およびそれらの組み合わせからなる群から選択される、態様12に記載の方法。
(態様20)
該研磨組成物が、1.5〜3.5のpHを有する、態様12に記載の方法。
(態様21)
該カチオン性ポリマーが、メタクリロイルオキシエチルトリメチルアンモニウムのモノマーまたはジアリルジメチルアンモニウムのいずれかである、態様12に記載の方法。
(態様22)
該カチオン性ポリマーが、該研磨組成物中に10ppm〜100ppmの量で存在する、態様12に記載の方法。
(態様23)
該基材が、窒化ケイ素の少なくとも1つの層を含む、態様12に記載の方法。
(態様24)
該基材が、酸化ケイ素の少なくとも1つの層を含む、態様23に記載の方法。
(態様25)
該窒化ケイ素が、該酸化ケイ素の除去される速度より速い速度で該基材から除去される、態様24に記載の方法。
Claims (9)
- 基材を研磨するための化学的機械的研磨組成物であって:
(a)液体キャリアーと、
(b)該液体キャリアー中に懸濁された研削剤であって、該研削剤がコロイドシリカ粒子を含み、そしてゼータ電位0を有する該コロイドシリカ粒子がアミノシラン化合物を用いて処理された表面を有する、研削剤と、
(c)1〜4のpKaを有する少なくとも1種の酸性成分であって、該少なくとも1種の酸性成分が、該研磨組成物中に500ppm〜3000ppmの量で存在する、酸性成分と、
(d)カチオン性ポリマーであって、該カチオン性ポリマーが、該研磨組成物中に10ppm〜100ppmの量で存在する、カチオン性ポリマーと、
を含む、組成物であって、
ここで、該研磨組成物が1〜3.5のpHを有し、そして
a)該アミノシラン化合物が、ダイポーダルシラン、アミノプロピルトリアルコキシシラン、およびビス(トリメトキシシリルプロピル)アミンからなる群から選択されること、
b)該アミノシラン化合物を用いて処理された表面を有する該コロイドシリカ粒子が、5mV以上のゼータ電位を有すること、
c)該アミノシラン化合物が、該研磨組成物中に50ppm〜500ppmの量で存在すること、
のいずれか1つまたは2つ以上を適用する、組成物。 - 該コロイドシリカ粒子が、0.1wt%〜4wt%の量で、該研磨組成物中に存在する、請求項1に記載の研磨組成物。
- a)該少なくとも1種の酸性成分が、無機酸、カルボン酸、有機ホスホン酸、酸性複素環化合物、1−ヒドロキシエチリデン−1、1−ジホスホン酸、アミノトリ(メチレンホスホン酸)、それらの塩、およびそれらの組み合わせからなる群から選択されること、
b)該研磨組成物が、1.5〜3.5のpHを有すること、
c)該カチオン性ポリマーが、メタクリロイルオキシエチルトリメチルアンモニウムのホモポリマーまたはジアリルジメチルアンモニウムのいずれかであること、
のいずれか1つまたは2つ以上を適用する、請求項1に記載の研磨組成物。 - 基材を化学的機械的に研磨する方法であって、該方法が:
(i)基材と
(a)液体キャリアーと、
(b)該液体キャリアー中に懸濁された研削剤であって、該研削剤がコロイドシリカ粒子を含み、そしてゼータ電位0を有する該コロイドシリカ粒子がアミノシラン化合物を用いて処理された表面を有する、研削剤と、
(c)1〜4のpKaを有する少なくとも1種の酸性成分であって、該少なくとも1種の酸性成分が、該研磨組成物中に500ppm〜3000ppmの量で存在する、酸性成分と、
(d)カチオン性ポリマーであって、該カチオン性ポリマーが、該研磨組成物中に10ppm〜100ppmの量で存在する、カチオン性ポリマーと、
を含む化学的機械的研磨組成物と、を接触させる工程と、
(ii)該研磨組成物を該基材に対して動かす工程と、
(iii)該基材を磨くために少なくとも該基材の一部分を摩耗させる工程と、
を含み、そして
a)該アミノシラン化合物を用いて処理された表面を有する該コロイドシリカ粒子が、5mV以上のゼータ電位を有すること、
b)該アミノシラン化合物が、ダイポーダルシラン、アミノプロピルトリアルコキシシラン、およびビス(トリメトキシシリルプロピル)アミンからなる群から選択されること、
c)該アミノシラン化合物が、該研磨組成物中に50ppm〜500ppmの量で存在すること、
のいずれか1つまたは2つ以上を適用する、方法。 - 該コロイドシリカ粒子が、0.1wt%〜4.0wt%の量で該研磨組成物中に存在する、請求項4に記載の方法。
- a)該少なくとも1種の酸性成分が、無機酸、カルボン酸、有機ホスホン酸、酸性複素環化合物、1−ヒドロキシエチリデン−1、1−ジホスホン酸、アミノトリ(メチレンホスホン酸)、それらの塩、およびそれらの組み合わせからなる群から選択されること、
b)該研磨組成物が、1.5〜3.5のpHを有すること、
c)該カチオン性ポリマーが、メタクリロイルオキシエチルトリメチルアンモニウムのホモポリマーまたはジアリルジメチルアンモニウムのいずれかであること、のいずれか1つまたは2つ以上を適用する、請求項4に記載の方法。 - 該基材が、窒化ケイ素の少なくとも1つの層を含む、請求項4に記載の方法。
- 該基材が、酸化ケイ素の少なくとも1つの層を含む、請求項7に記載の方法。
- 該窒化ケイ素が、該酸化ケイ素の除去される速度より速い速度で該基材から除去される、請求項8に記載の方法。
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MY147729A (en) | 2013-01-15 |
US7994057B2 (en) | 2011-08-09 |
WO2009042072A3 (en) | 2009-06-18 |
IL203477A (en) | 2013-03-24 |
EP2197972A2 (en) | 2010-06-23 |
CN101802125B (zh) | 2013-11-06 |
CN101802125A (zh) | 2010-08-11 |
WO2009042072A2 (en) | 2009-04-02 |
EP2197972A4 (en) | 2011-06-01 |
JP2010541203A (ja) | 2010-12-24 |
EP2197972B1 (en) | 2020-04-01 |
KR20100074207A (ko) | 2010-07-01 |
TWI428436B (zh) | 2014-03-01 |
US20090081871A1 (en) | 2009-03-26 |
TW200918658A (en) | 2009-05-01 |
KR101232585B1 (ko) | 2013-02-12 |
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