TWI351430B - Polishing composition containing polyether amine - Google Patents

Polishing composition containing polyether amine Download PDF

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Publication number
TWI351430B
TWI351430B TW096111455A TW96111455A TWI351430B TW I351430 B TWI351430 B TW I351430B TW 096111455 A TW096111455 A TW 096111455A TW 96111455 A TW96111455 A TW 96111455A TW I351430 B TWI351430 B TW I351430B
Authority
TW
Taiwan
Prior art keywords
substrate
polishing
compound
polishing system
group
Prior art date
Application number
TW096111455A
Other languages
English (en)
Chinese (zh)
Other versions
TW200811276A (en
Inventor
Jeffrey Dysard
Paul Feeney
Sriram Anjur
Timothy Johns
Yun-Biao Xin
Li Wang
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200811276A publication Critical patent/TW200811276A/zh
Application granted granted Critical
Publication of TWI351430B publication Critical patent/TWI351430B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW096111455A 2006-04-27 2007-03-30 Polishing composition containing polyether amine TWI351430B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/412,369 US7585340B2 (en) 2006-04-27 2006-04-27 Polishing composition containing polyether amine

Publications (2)

Publication Number Publication Date
TW200811276A TW200811276A (en) 2008-03-01
TWI351430B true TWI351430B (en) 2011-11-01

Family

ID=38646979

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111455A TWI351430B (en) 2006-04-27 2007-03-30 Polishing composition containing polyether amine

Country Status (10)

Country Link
US (2) US7585340B2 (enExample)
EP (1) EP2029689B1 (enExample)
JP (1) JP5175270B2 (enExample)
KR (1) KR101371850B1 (enExample)
CN (1) CN101432384B (enExample)
IL (1) IL194461A (enExample)
MY (2) MY146591A (enExample)
SG (1) SG171622A1 (enExample)
TW (1) TWI351430B (enExample)
WO (1) WO2007127121A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
EP2131389A4 (en) * 2007-03-26 2011-06-22 Jsr Corp Aqueous dispersion for chemical-mechanical polishing and method for chemical-mechanical polishing for a semiconductor assembly
US8157876B2 (en) * 2007-07-31 2012-04-17 Cabot Microelectronics Corporation Slurry composition containing non-ionic polymer and method for use
JP5220428B2 (ja) * 2008-02-01 2013-06-26 株式会社フジミインコーポレーテッド 研磨用組成物を用いた研磨方法
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US20140311044A1 (en) * 2011-04-25 2014-10-23 Bando Chemical Industries, Ltd. Polishing film
US8999193B2 (en) * 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
CN105144354B (zh) * 2013-02-28 2017-12-01 福吉米株式会社 用于去除钴的研磨组合物
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
JP6306383B2 (ja) * 2014-03-17 2018-04-04 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
CN104650740B (zh) * 2014-12-10 2017-07-14 深圳市力合材料有限公司 一种可实现快速稳定抛光的抛光液
KR102892429B1 (ko) * 2014-12-16 2025-11-27 바스프 에스이 게르마늄을 포함하는 기판의 높은 효과적 연마를 위한 화학 기계적 연마 (cmp) 조성물
JP2016154208A (ja) * 2015-02-12 2016-08-25 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
WO2018039462A1 (en) * 2016-08-24 2018-03-01 Ppg Industries Ohio, Inc. Alkaline composition for treating metal substartes
US20180244955A1 (en) 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
US10106705B1 (en) * 2017-03-29 2018-10-23 Fujifilm Planar Solutions, LLC Polishing compositions and methods of use thereof
KR20180137167A (ko) * 2017-06-16 2018-12-27 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법
US10119048B1 (en) 2017-07-31 2018-11-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low-abrasive CMP slurry compositions with tunable selectivity
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
US12227673B2 (en) * 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
CN113004799A (zh) 2019-12-19 2021-06-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
WO2022140081A1 (en) * 2020-12-21 2022-06-30 Fujifilm Electronic Materials U.S.A., Inc. Chemical mechanical polishing compositions and methods of use thereof

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5985999A (en) * 1993-07-13 1999-11-16 Huntsman, Petrochemical Corporation Dyeable polyolefin containing polyetheramine modified functionalized polyolefin
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6099604A (en) * 1997-08-21 2000-08-08 Micron Technology, Inc. Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
US6533832B2 (en) * 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
US6179887B1 (en) * 1999-02-17 2001-01-30 3M Innovative Properties Company Method for making an abrasive article and abrasive articles thereof
WO2001012739A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
JP4188598B2 (ja) * 1999-08-13 2008-11-26 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う研磨系及びその使用方法
US6376381B1 (en) * 1999-08-31 2002-04-23 Micron Technology, Inc. Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
TWI228538B (en) * 2000-10-23 2005-03-01 Kao Corp Polishing composition
US6555510B2 (en) * 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
KR100497608B1 (ko) * 2002-08-05 2005-07-01 삼성전자주식회사 슬러리 조성물 및 이의 제조 방법과 이를 사용한 연마 방법
TW200424299A (en) * 2002-12-26 2004-11-16 Kao Corp Polishing composition
JP2004247542A (ja) * 2003-02-14 2004-09-02 Kao Corp 精密部品用基板の製造方法
US7066801B2 (en) * 2003-02-21 2006-06-27 Dow Global Technologies, Inc. Method of manufacturing a fixed abrasive material
US6910951B2 (en) * 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
JP4267348B2 (ja) * 2003-03-05 2009-05-27 花王株式会社 研磨基板の製造方法
US7160807B2 (en) * 2003-06-30 2007-01-09 Cabot Microelectronics Corporation CMP of noble metals
US20050079803A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Chemical-mechanical planarization composition having PVNO and associated method for use
WO2006098141A1 (ja) 2005-03-16 2006-09-21 Asahi Glass Company, Limited 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
JP2006278522A (ja) * 2005-03-28 2006-10-12 Seimi Chem Co Ltd 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
TW200811276A (en) 2008-03-01
US8741009B2 (en) 2014-06-03
CN101432384B (zh) 2013-05-08
MY146591A (en) 2012-08-30
KR20090009264A (ko) 2009-01-22
US20090289033A1 (en) 2009-11-26
US20070251155A1 (en) 2007-11-01
EP2029689A1 (en) 2009-03-04
IL194461A (en) 2014-07-31
EP2029689B1 (en) 2019-05-15
KR101371850B1 (ko) 2014-03-07
JP5175270B2 (ja) 2013-04-03
MY160946A (en) 2017-03-31
WO2007127121A1 (en) 2007-11-08
SG171622A1 (en) 2011-06-29
US7585340B2 (en) 2009-09-08
EP2029689A4 (en) 2010-11-17
CN101432384A (zh) 2009-05-13
IL194461A0 (en) 2009-08-03
JP2009535816A (ja) 2009-10-01

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