JP2014505358A - ポリシリコンの研磨用組成物及び研磨方法 - Google Patents
ポリシリコンの研磨用組成物及び研磨方法 Download PDFInfo
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- JP2014505358A JP2014505358A JP2013544806A JP2013544806A JP2014505358A JP 2014505358 A JP2014505358 A JP 2014505358A JP 2013544806 A JP2013544806 A JP 2013544806A JP 2013544806 A JP2013544806 A JP 2013544806A JP 2014505358 A JP2014505358 A JP 2014505358A
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (20)
- (a)0.5質量%〜20質量%のシリカと、(b)0.005質量%〜2質量%の1種又はそれ以上のアミノホスホン酸と、(c)0.001質量%〜0.1質量%の1種又はそれ以上の多糖と、(d)0.05質量%〜5質量%の1種又はそれ以上のテトラアルキルアンモニウム塩と、(e)0.01質量%〜2質量%の重炭酸塩と、(f)0.005質量%〜2質量%の1種又はそれ以上のアゾール環を含む化合物と、(g)任意に水酸化カリウムと、(h)水とから本質的になる化学機械研磨用組成物であって、該研磨用組成物はpH7〜11を有する化学機械研磨用組成物。
- 該シリカが湿式処理シリカである、請求項1に記載の研磨用組成物。
- 該研磨用組成物が0.1質量%〜1質量%の1種又はそれ以上のアミノホスホン酸を含有する、請求項1に記載の研磨用組成物。
- 該アミノホスホン酸がエチレンジアミンテトラ(メチレンホスホン酸)、アミノトリ(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、及びこれらの組み合わせからなる群から選択される、請求項3に記載の研磨用組成物。
- 該アミノホスホン酸がアミノトリ(メチレンホスホン酸)である、請求項4に記載の研磨用組成物。
- 該多糖がヒドロキシエチルセルロースである、請求項1に記載の研磨用組成物。
- 該ヒドロキシエチルセルロースが分子量25,000ダルトン〜100,000ダルトンを有する、請求項6に記載の研磨用組成物。
- 該アゾール環を含む化合物がトリアゾール化合物である、請求項1に記載の研磨用組成物。
- 該研磨用組成物中に水酸化カリウムが存在する、請求項1に記載の研磨用組成物。
- ポリシリコンを含む基板を研磨する方法であって、該方法は(i)基板を研磨パッド及び化学機械組成物に接触させる工程と、(ii)化学機械研磨用組成物を研磨パッドと基板との間に置いて研磨パッドを基板に対して動かす工程と、(iii)少なくとも基板の一部を摩耗させて、基板を研磨する工程とを含み、該化学機械研磨用組成物が(a)0.5質量%〜20質量%のシリカと、(b)0.005質量%〜2質量%の1種又はそれ以上のアミノホスホン酸と、(c)0.001質量%〜0.1質量%の1種又はそれ以上のアルキル化セルロース化合物と、(d)0.05質量%〜5質量%の1種又はそれ以上のテトラアルキルアンモニウム塩と、(e)0.01質量%〜2質量%の重炭酸塩と、(f)0.005質量%〜2質量%の1種又はそれ以上のアゾール環を含む化合物と、(g)任意に水酸化カリウムと、(h)水とから本質的になり、pH7〜11を有する、方法。
- 該シリカが湿式処理シリカである、請求項10に記載の方法。
- 該研磨用組成物が0.1質量%〜1質量%の1種又はそれ以上のアミノホスホン酸を含有する、請求項10に記載の方法。
- 該アミノホスホン酸がエチレンジアミンテトラ(メチレンホスホン酸)、アミノトリ(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、及びこれらの組み合わせからなる群から選択される、請求項12に記載の方法。
- 該アミノホスホン酸がアミノトリ(メチレンホスホン酸)である、請求項13に記載の方法。
- 該多糖がヒドロキシエチルセルロースである、請求項10に記載の方法。
- 該ヒドロキシエチルセルロースが分子量25,000ダルトン〜100,000ダルトンを有する、請求項15に記載の方法。
- 該アゾール環を含む化合物がトリアゾール化合物である、請求項10に記載の方法。
- 該研磨用組成物中に水酸化カリウムが存在する、請求項10に記載の方法。
- 該基板が更に酸化ケイ素、窒化ケイ素、又はこれらの組み合わせを含む、請求項10に記載の方法。
- 該酸化ケイ素又は窒化ケイ素が層間誘電層を形成している、請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/971,714 US8697576B2 (en) | 2009-09-16 | 2010-12-17 | Composition and method for polishing polysilicon |
US12/971,714 | 2010-12-17 | ||
PCT/US2011/065366 WO2012083115A2 (en) | 2010-12-17 | 2011-12-16 | Composition and method for polishing polysilicon |
Publications (3)
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JP2014505358A true JP2014505358A (ja) | 2014-02-27 |
JP2014505358A5 JP2014505358A5 (ja) | 2015-01-22 |
JP6010043B2 JP6010043B2 (ja) | 2016-10-19 |
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US (2) | US8697576B2 (ja) |
EP (1) | EP2652063B1 (ja) |
JP (1) | JP6010043B2 (ja) |
KR (1) | KR101666706B1 (ja) |
CN (1) | CN103261358B (ja) |
IL (1) | IL226558A (ja) |
MY (1) | MY160675A (ja) |
SG (1) | SG190703A1 (ja) |
TW (1) | TWI432540B (ja) |
WO (1) | WO2012083115A2 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170074466A (ko) * | 2015-12-22 | 2017-06-30 | 주식회사 케이씨텍 | 폴리실리콘막 연마용 슬러리 조성물 |
JP2018150520A (ja) * | 2017-02-28 | 2018-09-27 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | 元素状ケイ素を含む膜の化学機械平坦化 |
JP2019522896A (ja) * | 2016-05-19 | 2019-08-15 | ドンジン セミケム カンパニー リミテッドDongjin Semichem Co., Ltd. | 化学−機械的研磨用スラリー組成物 |
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TW201241121A (en) | 2012-10-16 |
CN103261358A (zh) | 2013-08-21 |
IL226558A (en) | 2016-08-31 |
CN103261358B (zh) | 2014-12-10 |
EP2652063A2 (en) | 2013-10-23 |
MY160675A (en) | 2017-03-15 |
KR101666706B1 (ko) | 2016-10-17 |
US8697576B2 (en) | 2014-04-15 |
EP2652063B1 (en) | 2020-03-11 |
US20140191155A1 (en) | 2014-07-10 |
WO2012083115A3 (en) | 2013-01-17 |
US20110136344A1 (en) | 2011-06-09 |
TWI432540B (zh) | 2014-04-01 |
JP6010043B2 (ja) | 2016-10-19 |
KR20140003475A (ko) | 2014-01-09 |
WO2012083115A2 (en) | 2012-06-21 |
SG190703A1 (en) | 2013-07-31 |
EP2652063A4 (en) | 2017-07-05 |
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