JP6010043B2 - ポリシリコンの研磨用組成物及び研磨方法 - Google Patents
ポリシリコンの研磨用組成物及び研磨方法 Download PDFInfo
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- JP6010043B2 JP6010043B2 JP2013544806A JP2013544806A JP6010043B2 JP 6010043 B2 JP6010043 B2 JP 6010043B2 JP 2013544806 A JP2013544806 A JP 2013544806A JP 2013544806 A JP2013544806 A JP 2013544806A JP 6010043 B2 JP6010043 B2 JP 6010043B2
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- C09G—POLISHING COMPOSITIONS; SKI WAXES
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- C09K3/00—Materials not provided for elsewhere
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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Description
本発明の要旨は、以下のとおりである。
(1)(a)0.5質量%〜20質量%のシリカと、(b)0.005質量%〜2質量%の1種又はそれ以上のアミノホスホン酸と、(c)0.001質量%〜0.1質量%の1種又はそれ以上の多糖と、(d)0.05質量%〜5質量%の1種又はそれ以上のテトラアルキルアンモニウム塩と、(e)0.01質量%〜2質量%の重炭酸塩と、(f)0.005質量%〜2質量%の1種又はそれ以上のアゾール環を含む化合物と、(g)任意に水酸化カリウムと、(h)水とから本質的になる化学機械研磨用組成物であって、該研磨用組成物はpH7〜11を有する化学機械研磨用組成物。
(2)該シリカが湿式処理シリカである、(1)に記載の研磨用組成物。
(3)該研磨用組成物が0.1質量%〜1質量%の1種又はそれ以上のアミノホスホン酸を含有する、(1)に記載の研磨用組成物。
(4)該アミノホスホン酸がエチレンジアミンテトラ(メチレンホスホン酸)、アミノトリ(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、及びこれらの組み合わせからなる群から選択される、(3)に記載の研磨用組成物。
(5)該アミノホスホン酸がアミノトリ(メチレンホスホン酸)である、(4)に記載の研磨用組成物。
(6)該多糖がヒドロキシエチルセルロースである、(1)に記載の研磨用組成物。
(7)該ヒドロキシエチルセルロースが分子量25,000ダルトン〜100,000ダルトンを有する、(6)に記載の研磨用組成物。
(8)該アゾール環を含む化合物がトリアゾール化合物である、(1)に記載の研磨用組成物。
(9)該研磨用組成物中に水酸化カリウムが存在する、(1)に記載の研磨用組成物。
(10)ポリシリコンを含む基板を研磨する方法であって、該方法は(i)基板を研磨パッド及び化学機械組成物に接触させる工程と、(ii)化学機械研磨用組成物を研磨パッドと基板との間に置いて研磨パッドを基板に対して動かす工程と、(iii)少なくとも基板の一部を摩耗させて、基板を研磨する工程とを含み、該化学機械研磨用組成物が(a)0.5質量%〜20質量%のシリカと、(b)0.005質量%〜2質量%の1種又はそれ以上のアミノホスホン酸と、(c)0.001質量%〜0.1質量%の1種又はそれ以上のアルキル化セルロース化合物と、(d)0.05質量%〜5質量%の1種又はそれ以上のテトラアルキルアンモニウム塩と、(e)0.01質量%〜2質量%の重炭酸塩と、(f)0.005質量%〜2質量%の1種又はそれ以上のアゾール環を含む化合物と、(g)任意に水酸化カリウムと、(h)水とから本質的になり、pH7〜11を有する、方法。
(11)該シリカが湿式処理シリカである、(10)に記載の方法。
(12)該研磨用組成物が0.1質量%〜1質量%の1種又はそれ以上のアミノホスホン酸を含有する、(10)に記載の方法。
(13)該アミノホスホン酸がエチレンジアミンテトラ(メチレンホスホン酸)、アミノトリ(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、及びこれらの組み合わせからなる群から選択される、(12)に記載の方法。
(14)該アミノホスホン酸がアミノトリ(メチレンホスホン酸)である、(13)に記載の方法。
(15)該多糖がヒドロキシエチルセルロースである、(10)に記載の方法。
(16)該ヒドロキシエチルセルロースが分子量25,000ダルトン〜100,000ダルトンを有する、(15)に記載の方法。
(17)該アゾール環を含む化合物がトリアゾール化合物である、(10)に記載の方法。
(18)該研磨用組成物中に水酸化カリウムが存在する、(10)に記載の方法。
(19)該基板が更に酸化ケイ素、窒化ケイ素、又はこれらの組み合わせを含む、(10)に記載の方法。
(20)該酸化ケイ素又は窒化ケイ素が層間誘電層を形成している、(19)に記載の方法。
Claims (12)
- (a)0.5質量%〜20質量%のシリカと、(b)0.005質量%〜2質量%の1種又はそれ以上のアミノホスホン酸と、(c)0.001質量%〜0.1質量%の1種又はそれ以上の多糖であって、9,000〜100,000の分子量を有する多糖と、(d)0.05質量%〜5質量%の1種又はそれ以上のテトラアルキルアンモニウム塩と、(e)0.01質量%〜2質量%の重炭酸塩と、(f)0.005質量%〜2質量%の1種又はそれ以上のアゾール環を含む化合物と、(g)水酸化カリウムと、(h)水とからなる化学機械研磨用組成物であって、該研磨用組成物はpH7〜11を有する化学機械研磨用組成物。
- 該シリカが湿式処理シリカである、請求項1に記載の研磨用組成物。
- 該研磨用組成物が0.1質量%〜1質量%の1種又はそれ以上のアミノホスホン酸を含有する、請求項1に記載の研磨用組成物。
- 該アミノホスホン酸がエチレンジアミンテトラ(メチレンホスホン酸)、アミノトリ(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、及びこれらの組み合わせからなる群から選択される、請求項3に記載の研磨用組成物。
- 該アミノホスホン酸がアミノトリ(メチレンホスホン酸)である、請求項4に記載の研磨用組成物。
- 該多糖がヒドロキシエチルセルロースである、請求項1に記載の研磨用組成物。
- 該ヒドロキシエチルセルロースが分子量25,000〜100,000を有する、請求項6に記載の研磨用組成物。
- 該アゾール環を含む化合物がトリアゾール化合物である、請求項1に記載の研磨用組成物。
- 該研磨用組成物中に水酸化カリウムが存在する、請求項1に記載の研磨用組成物。
- ポリシリコンを含む基板を研磨する方法であって、該方法は(i)基板を研磨パッド及び請求項1〜9のいずれか1項記載の化学機械組成物に接触させる工程を含む、方法。
- 該基板が更に酸化ケイ素、窒化ケイ素、又はこれらの組み合わせを含む、請求項10に記載の方法。
- 該酸化ケイ素又は窒化ケイ素が層間誘電層を形成している、請求項11に記載の方法。
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US12/971,714 US8697576B2 (en) | 2009-09-16 | 2010-12-17 | Composition and method for polishing polysilicon |
US12/971,714 | 2010-12-17 | ||
PCT/US2011/065366 WO2012083115A2 (en) | 2010-12-17 | 2011-12-16 | Composition and method for polishing polysilicon |
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-
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TWI432540B (zh) | 2014-04-01 |
SG190703A1 (en) | 2013-07-31 |
US8697576B2 (en) | 2014-04-15 |
TW201241121A (en) | 2012-10-16 |
EP2652063B1 (en) | 2020-03-11 |
US20140191155A1 (en) | 2014-07-10 |
US20110136344A1 (en) | 2011-06-09 |
EP2652063A4 (en) | 2017-07-05 |
JP2014505358A (ja) | 2014-02-27 |
KR20140003475A (ko) | 2014-01-09 |
EP2652063A2 (en) | 2013-10-23 |
IL226558A (en) | 2016-08-31 |
WO2012083115A3 (en) | 2013-01-17 |
CN103261358B (zh) | 2014-12-10 |
CN103261358A (zh) | 2013-08-21 |
MY160675A (en) | 2017-03-15 |
KR101666706B1 (ko) | 2016-10-17 |
WO2012083115A2 (en) | 2012-06-21 |
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