KR100662546B1 - 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법 - Google Patents
실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법 Download PDFInfo
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- KR100662546B1 KR100662546B1 KR1020050018492A KR20050018492A KR100662546B1 KR 100662546 B1 KR100662546 B1 KR 100662546B1 KR 1020050018492 A KR1020050018492 A KR 1020050018492A KR 20050018492 A KR20050018492 A KR 20050018492A KR 100662546 B1 KR100662546 B1 KR 100662546B1
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- South Korea
- Prior art keywords
- chelating agent
- polishing
- acid
- slurry composition
- silicon wafer
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Description
Claims (9)
- 초순수, 콜로이드 실리카, pH 조절제, 수용성 증점제로 이루어지는 실리콘 웨이퍼 연마용 슬러리 조성물에 있어서, 상기 조성물에 아세트산계의 킬레이트제와 인산계 킬레이트제 중 적어도 어느 하나의 킬레이트제를 포함하며, 상기 아세트산계 킬레이트제는 에틸렌디아민테트라아세트산의 염, 디에틸렌트리아민펜타아세트산의 염, N-(히드록시에틸)에틸렌디아민트리아세트산의 염, 니트릴로트리아세트산의 염으로 이루어진 군에서 선택되는 어느 하나 또는 둘 이상의 혼합물이고, 상기 인산계 킬레이트제는 에틸렌디아민테트라(메틸렌 포스포닉산)의 나트륨염, 에틸렌디아민테트라(메틸렌 포스포닉산)의 암모늄염, 아미노트리(메틸렌포스포닉산) 및 디에틸렌트리아민-펜타(메틸렌 포스포닉산)으로 이루어진 군에서 선택되는 어느 하나 또는 둘 이상의 혼합물인 것을 특징으로 하는 연마용 슬러리 조성물.
- 제 1항에 있어서, 상기 아세트산계의 킬레이트제와 상기 인산계 킬레이트제를 동시에 사용하는 것을 특징으로 하는 연마용 슬러리 조성물.
- 제 1항에 있어서, 상기 수용성 증점제는 무게평균 분자량이 1,000,000~4,000,000인 수용성 셀룰로오스인 것을 특징으로 하는 연마용 슬러리 조성물.
- 삭제
- 삭제
- 제 1항에 있어서, 상기 킬레이트제로 아세트산계 킬레이트제를 포함할 시에는 슬러리 조성물 총중량에 대하여 0.001 ∼ 0.5중량%를 사용하고, 상기 킬레이트제로 인산계 킬레이트제를 포함할 시에는 슬러리 조성물 총중량에 대하여 0.0002 ∼ 5중량%를 사용하는 것을 특징으로 하는 연마용 슬러리 조성물.
- 제 2항에 있어서, 상기 인산계 킬레이트제의 사용량은 상기 아세트산계 킬레이트제의 사용량에 대하여 중량기준으로 0.2~10배인 것을 특징으로 하는 연마용 슬러리 조성물.
- 제 2항에 있어서, 상기 아세트산계 킬레이트제는 Na4EDTA, Na2EDTA, (NH4)4EDTA, (NH4)2EDTA 중의 어느 하나이고, 상기 인산계 킬레이트제는 에틸렌디아민테트라(메틸렌 포스포닉산)의 나트륨염[Sodium salt of ethylenediamine tetra(methylene phosphonic acid)] 또는 에틸렌디아민테트라(메틸렌 포스포닉산)의 암모늄염[Ammonium salt of ethylenediaminetetra(methylene -phosphonic acid)]인 것을 특징으로 하는 연마용 슬러리 조성물.
- 제 1항 내지 제 3항, 제 6항 내지 제 8항 중 어느 한 항의 연마용 슬러리 조성물로 싱글 웨이퍼(Single Wafer) 연마기 또는 멀티 웨이퍼(Multi Wafer) 연마기를 사용하여 실리콘 웨이퍼의 연마를 수행하는 것을 특징으로 하는 실리콘 웨이퍼 연마 방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050018492A KR100662546B1 (ko) | 2005-03-07 | 2005-03-07 | 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법 |
PCT/KR2005/004655 WO2006095958A1 (en) | 2005-03-07 | 2005-12-30 | Polishing slurry composition for improving surface quality of silicon wafer and method for polishing silicon wafer using the same |
JP2008500606A JP2008532329A (ja) | 2005-03-07 | 2005-12-30 | シリコンウエハの表面品質を改善する研磨用スラリー組成物、及びそれを用いたシリコンウエハの研磨方法 |
EP05822837A EP1856224B1 (en) | 2005-03-07 | 2005-12-30 | Polishing slurry composition for improving surface quality of silicon wafer and method for polishing silicon wafer using the same |
TW095107418A TWI349690B (en) | 2005-03-07 | 2006-03-06 | Polishing slurry composition and method of using the same |
US11/367,406 US7601273B2 (en) | 2005-03-07 | 2006-03-06 | Polishing slurry composition and method of using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050018492A KR100662546B1 (ko) | 2005-03-07 | 2005-03-07 | 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법 |
Publications (2)
Publication Number | Publication Date |
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KR20060097786A KR20060097786A (ko) | 2006-09-18 |
KR100662546B1 true KR100662546B1 (ko) | 2006-12-28 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020050018492A KR100662546B1 (ko) | 2005-03-07 | 2005-03-07 | 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7601273B2 (ko) |
EP (1) | EP1856224B1 (ko) |
JP (1) | JP2008532329A (ko) |
KR (1) | KR100662546B1 (ko) |
TW (1) | TWI349690B (ko) |
WO (1) | WO2006095958A1 (ko) |
Cited By (1)
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US10428242B2 (en) | 2017-03-29 | 2019-10-01 | Samsung Electronics Co., Ltd. | Slurry composition for chemical mechanical polishing |
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-
2005
- 2005-03-07 KR KR1020050018492A patent/KR100662546B1/ko active IP Right Grant
- 2005-12-30 EP EP05822837A patent/EP1856224B1/en active Active
- 2005-12-30 JP JP2008500606A patent/JP2008532329A/ja active Pending
- 2005-12-30 WO PCT/KR2005/004655 patent/WO2006095958A1/en active Application Filing
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2006
- 2006-03-06 TW TW095107418A patent/TWI349690B/zh active
- 2006-03-06 US US11/367,406 patent/US7601273B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10428242B2 (en) | 2017-03-29 | 2019-10-01 | Samsung Electronics Co., Ltd. | Slurry composition for chemical mechanical polishing |
Also Published As
Publication number | Publication date |
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TWI349690B (en) | 2011-10-01 |
WO2006095958A1 (en) | 2006-09-14 |
KR20060097786A (ko) | 2006-09-18 |
US7601273B2 (en) | 2009-10-13 |
US20060196850A1 (en) | 2006-09-07 |
EP1856224A1 (en) | 2007-11-21 |
EP1856224B1 (en) | 2011-08-10 |
JP2008532329A (ja) | 2008-08-14 |
EP1856224A4 (en) | 2010-07-07 |
TW200636030A (en) | 2006-10-16 |
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