KR100754807B1 - 실리콘 웨이퍼 연마용 슬러리 조성물 및 이를 이용한연마방법 - Google Patents
실리콘 웨이퍼 연마용 슬러리 조성물 및 이를 이용한연마방법 Download PDFInfo
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- KR100754807B1 KR100754807B1 KR1020050128376A KR20050128376A KR100754807B1 KR 100754807 B1 KR100754807 B1 KR 100754807B1 KR 1020050128376 A KR1020050128376 A KR 1020050128376A KR 20050128376 A KR20050128376 A KR 20050128376A KR 100754807 B1 KR100754807 B1 KR 100754807B1
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- polishing
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- silica
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- silicon wafer
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- 239000002002 slurry Substances 0.000 title claims abstract description 79
- 238000005498 polishing Methods 0.000 title claims abstract description 75
- 239000000203 mixture Substances 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 238000007517 polishing process Methods 0.000 title claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000002245 particle Substances 0.000 claims abstract description 17
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 150000007530 organic bases Chemical class 0.000 claims abstract description 14
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 12
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 10
- 239000002562 thickening agent Substances 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 39
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 16
- 229910021529 ammonia Inorganic materials 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 9
- 239000005977 Ethylene Substances 0.000 claims description 9
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 9
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 9
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 7
- 229920002678 cellulose Polymers 0.000 claims description 7
- 235000010980 cellulose Nutrition 0.000 claims description 7
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 7
- 239000001913 cellulose Substances 0.000 claims description 6
- 239000008119 colloidal silica Substances 0.000 claims description 6
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 6
- 239000012498 ultrapure water Substances 0.000 claims description 6
- 239000011164 primary particle Substances 0.000 claims description 5
- 239000011163 secondary particle Substances 0.000 claims description 5
- 229910021485 fumed silica Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 4
- RPZANUYHRMRTTE-UHFFFAOYSA-N 2,3,4-trimethoxy-6-(methoxymethyl)-5-[3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxyoxane;1-[[3,4,5-tris(2-hydroxybutoxy)-6-[4,5,6-tris(2-hydroxybutoxy)-2-(2-hydroxybutoxymethyl)oxan-3-yl]oxyoxan-2-yl]methoxy]butan-2-ol Chemical compound COC1C(OC)C(OC)C(COC)OC1OC1C(OC)C(OC)C(OC)OC1COC.CCC(O)COC1C(OCC(O)CC)C(OCC(O)CC)C(COCC(O)CC)OC1OC1C(OCC(O)CC)C(OCC(O)CC)C(OCC(O)CC)OC1COCC(O)CC RPZANUYHRMRTTE-UHFFFAOYSA-N 0.000 claims description 3
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 3
- UOJIFOZIWVKHNW-UHFFFAOYSA-M ethoxy(trimethyl)azanium;hydroxide Chemical compound [OH-].CCO[N+](C)(C)C UOJIFOZIWVKHNW-UHFFFAOYSA-M 0.000 claims description 3
- 229920003063 hydroxymethyl cellulose Polymers 0.000 claims description 3
- 229940031574 hydroxymethyl cellulose Drugs 0.000 claims description 3
- 239000001863 hydroxypropyl cellulose Substances 0.000 claims description 3
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 claims description 3
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 claims description 3
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 claims description 3
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 claims description 3
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 claims description 3
- 229920000609 methyl cellulose Polymers 0.000 claims description 3
- 239000001923 methylcellulose Substances 0.000 claims description 3
- 235000010981 methylcellulose Nutrition 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 abstract description 11
- 239000006185 dispersion Substances 0.000 abstract description 7
- 230000001965 increasing effect Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 19
- 239000004094 surface-active agent Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 229940071826 hydroxyethyl cellulose Drugs 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920003169 water-soluble polymer Polymers 0.000 description 4
- -1 amine compound Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 238000007518 final polishing process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229960002900 methylcellulose Drugs 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001687 destabilization Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- KNHNLCHRGUQAAO-UHFFFAOYSA-M tetramethoxyazanium;hydroxide Chemical compound [OH-].CO[N+](OC)(OC)OC KNHNLCHRGUQAAO-UHFFFAOYSA-M 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
# | 계면활성제 | 평균분자량 | 2)침하비 (%) | 3)거대입자량 (ea) | LPD-N (ea) | AREA DEFECT (ea) |
실시예 1 | 1-2) R(R'O)m(R"O)nH | 15,000~40,000 | 0.5 | 1840 | 8 | 8 |
실시예 2 | 1-3) R(R'O)m(R"O)nH | 150,000~400,000 | 0 | 1520 | 6 | 6 |
실시예 3 | 1-4) R(R'O)m(R"O)nH | 150,000~400,000 | 0 | 1632 | 6 | 5 |
실시예 4 | 1-5) R(R'O)m(R"O)nH | 150,000~400,000 | 0 | 1548 | 5 | 5 |
실시예 5 | 1-6) R(R'O)m(R"O)nH | 150,000~400,000 | 0 | 1432 | 5 | 4 |
실시예 6 | 1-7) R(R'O)m(R"O)nH | 150,000~400,000 | 0 | 1200 | 4 | 2 |
실시예 7 | 1-8) R(R'O)m(R"O)nR | 150,000~400,000 | 0 | 1344 | 4 | 3 |
비교예 1 | 미첨가 | - | 4.0 | 3600 | 24 | 12 |
비교예 2 | 1-1) R(R'O)m(R"O)nH | 6,000~8,000 | 4.5 | 3520 | 28 | 15 |
Claims (7)
- 실리카, pH 조절제, 유기염기, 증점제, 및 초순수를 포함하는 실리콘 웨이퍼 연마용 슬러리 조성물에 있어서, 하기 화학식 1, 화학식 2 및 화학식 3 중 하나 이상의 비이온성 계면활성제를 더 포함하는 것을 특징으로 하는 실리콘 웨이퍼 연마용 슬러리 조성물.R(R'O)m(R"O)nH ------[화학식 1](상기 식에서, R은 C5~C20의 알킬이고; R' 및 R"은 독립적으로 에틸렌 혹은 프로필렌이며; 평균 분자량은 10,000 ~ 5,000,000이다.)R(R'O)m(R"O)nR ------[화학식 2](상기 식에서, R은 C5~C20의 알킬이고; R' 및 R"은 독립적으로 에틸렌 혹은 프로필렌이며; 평균 분자량은 10,000 ~ 5,000,000이다.)RN(R'O)mH(R"O)nH ------[화학식 3](상기 식에서, R은 C5~C20의 알킬이고; R' 및 R"은 독립적으로 에틸렌 혹은 프로필렌이며; 평균 분자량은 10,000 ~ 5,000,000이다.)
- 제 1항에 있어서, 비이온성 계면활성제 0.001 ~ 1 중량%, 실리카 0.01 ~ 20 중량%, pH 조절제 0.01 ~ 5 중량%, 유기염기 0.00001 ~ 1 중량% 및 증점제 0.001 ~ 2 중량%를 포함하고,잔부로써 초순수를 함유하는 것을 특징으로 하는 실리콘 웨이퍼 연마용 슬러리 조성물.
- 제 1항 또는 제 2항에 있어서, 상기 실리카는 1차 입경이 30 ~ 50㎚이고, 2차 입경이 60 ~ 80㎚이며, 평균 입경이 35 ~ 80㎚인 콜로이달 실리카 또는 발연 실리카인 것을 특징으로 하는 실리콘 웨이퍼 연마용 슬러리 조성물.
- 제 1항 또는 제 2항에 있어서, 상기 pH 조절제는 암모니아이고 슬러리의 최종 pH가 10.5 ~ 12인 것을 특징으로 하는 실리콘 웨이퍼 연마용 슬러리 조성물.
- 제 1항 또는 제 2항에 있어서, 상기 유기염기는 테트라메틸암모늄히드록사이드, 테트라에틸암모늄히드록사이드, 트라이메틸에톡시암모늄히드록사이드, 및 N,N- 디메틸피페리딘히드록사이드로 구성된 군에서 선택되는 1종 이상인 것을 특징으로 하는 실리콘 웨이퍼 연마용 슬러리 조성물.
- 제 1항 또는 제 2항에 있어서, 상기 증점제는 히드록시프로필셀룰로오스, 히드록시부틸메틸셀룰로오스, 히드록시프로필메틸셀룰로오스, 히드록시에틸셀룰로오스, 친유성으로 조절된 히드록시에틸셀룰로오스, 히드록시메틸셀룰로오스, 및 메틸셀룰로오스로 구성된 군에서 선택되는 1종 이상인 분자량 10만 내지 150만의 셀룰로오스인 것을 특징으로 하는 실리콘 웨이퍼 연마용 슬러리 조성물.
- 제 1항 또는 제 2항의 실리콘 웨이퍼 연마용 슬러리 조성물을 웨이퍼 경면 연마 공정의 연마 슬러리로 사용하는 것을 특징으로 하는 연마 방법.
Priority Applications (1)
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JP2002164308A (ja) | 2000-11-24 | 2002-06-07 | Nec Corp | 化学的機械的研磨用スラリー |
JP2002184726A (ja) | 2000-12-19 | 2002-06-28 | Okamoto Machine Tool Works Ltd | 硬脆材料基板用研磨剤 |
JP2003282496A (ja) | 2002-03-20 | 2003-10-03 | Asahi Kasei Corp | 研磨材組成物 |
KR20040057045A (ko) * | 2002-12-12 | 2004-07-02 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
KR100516886B1 (ko) | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
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JP2002164308A (ja) | 2000-11-24 | 2002-06-07 | Nec Corp | 化学的機械的研磨用スラリー |
JP2002184726A (ja) | 2000-12-19 | 2002-06-28 | Okamoto Machine Tool Works Ltd | 硬脆材料基板用研磨剤 |
JP2003282496A (ja) | 2002-03-20 | 2003-10-03 | Asahi Kasei Corp | 研磨材組成物 |
KR100516886B1 (ko) | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
KR20040057045A (ko) * | 2002-12-12 | 2004-07-02 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
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