SG168412A1 - Synthesis of a functionally graded pad for chemical mechanical planarization - Google Patents

Synthesis of a functionally graded pad for chemical mechanical planarization

Info

Publication number
SG168412A1
SG168412A1 SG200802604-9A SG2008026049A SG168412A1 SG 168412 A1 SG168412 A1 SG 168412A1 SG 2008026049 A SG2008026049 A SG 2008026049A SG 168412 A1 SG168412 A1 SG 168412A1
Authority
SG
Singapore
Prior art keywords
pad
erosion
grading
compliances
asperities
Prior art date
Application number
SG200802604-9A
Inventor
Sudhanshu Misra
Pradip K Roy
Manish Deopura
Original Assignee
Nexplanar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexplanar Corp filed Critical Nexplanar Corp
Publication of SG168412A1 publication Critical patent/SG168412A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/14—Zonally-graded wheels; Composite wheels comprising different abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/04—Zonally-graded surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)

Abstract

The material removal rate, defectivity, erosion, and dishing and the effective planarization length of a CMP process depend on the local tribology (hardness, compliances) and physical properties (pore size & density, asperities) of the pad material. Graded pads exhibit spatial modulation in various material/tribological properties customized to planarize:(i) Dissimilar material stacks such as metal/barrier or oxide/nitride [STI] with minimum dishing, erosion, over polish and nanotopography.(ii) Specialized materials (low-k, strain silicon and SOI) with minimum erosion and slurry selectivity. (iii) Devices with complex design and architecture (system-on a- chip and vertical gate) with varying pattern density and chip sizes. Several types of grading described here include annular, island, step and continuous grading. The pad grading design for a CMP process for a particular slurry chemistry and wafer sweep over the pad is based on local pad material (hardness, compliances, pore size and asperities) properties. Such functionally graded polymeric pads are expected to have significant impact in planarizing scaled (sub-100 nm) silicon ICs, disk drive, micromachine (MEMs) and nanocomposite substrates. (No suitable figure)
SG200802604-9A 2003-06-03 2004-06-03 Synthesis of a functionally graded pad for chemical mechanical planarization SG168412A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US47537403P 2003-06-03 2003-06-03
US47530503P 2003-06-03 2003-06-03
US47528303P 2003-06-03 2003-06-03
US47530703P 2003-06-03 2003-06-03

Publications (1)

Publication Number Publication Date
SG168412A1 true SG168412A1 (en) 2011-02-28

Family

ID=33556644

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200802604-9A SG168412A1 (en) 2003-06-03 2004-06-03 Synthesis of a functionally graded pad for chemical mechanical planarization
SG2012073722A SG2012073722A (en) 2003-06-03 2004-06-03 Synthesis of a functionally graded pad for chemical mechanical planarization

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012073722A SG2012073722A (en) 2003-06-03 2004-06-03 Synthesis of a functionally graded pad for chemical mechanical planarization

Country Status (5)

Country Link
JP (2) JP4746540B2 (en)
KR (1) KR101108024B1 (en)
CN (1) CN1816422B (en)
SG (2) SG168412A1 (en)
WO (1) WO2005000529A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385050B (en) 2005-02-18 2013-02-11 Nexplanar Corp Customized polishing pads for cmp and methods of fabrication and use thereof
KR101616535B1 (en) * 2005-02-18 2016-04-29 넥스플래너 코퍼레이션 Customized polishing pads for cmp and methods of fabrication and use thereof
CN100445037C (en) * 2007-09-21 2008-12-24 南京航空航天大学 Laminated freezing abrasive material polishing pad used for chemico-mechanical polishing and method of producing the same
EP2316614B1 (en) * 2008-08-08 2019-07-17 Kuraray Co., Ltd. Polishing pad and method for manufacturing the polishing pad
US8815110B2 (en) 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8697576B2 (en) 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
US8883034B2 (en) 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
US9731456B2 (en) 2013-03-14 2017-08-15 Sabic Global Technologies B.V. Method of manufacturing a functionally graded article
KR102347711B1 (en) * 2014-04-03 2022-01-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Polishing pads and systems and methods of making and using the same
TWI689406B (en) * 2014-10-17 2020-04-01 美商應用材料股份有限公司 Polishing pad and method of fabricating the same
CN105397609B (en) * 2015-11-03 2017-06-27 大连理工大学 A kind of modification processing of optical element high precision plane
CN110815038B (en) * 2018-08-08 2021-06-04 湖北鼎龙控股股份有限公司 Polishing pad and preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010001756A1 (en) * 1998-04-24 2001-05-24 Applied Materials, Inc. A Delaware Corporation Chemical mechanical polishing with multiple polishing pads
US6413153B1 (en) * 1999-04-26 2002-07-02 Beaver Creek Concepts Inc Finishing element including discrete finishing members
US20030148614A1 (en) * 2002-02-04 2003-08-07 Simpson Alexander William Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
US20040171339A1 (en) * 2002-10-28 2004-09-02 Cabot Microelectronics Corporation Microporous polishing pads

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63297416A (en) * 1987-05-28 1988-12-05 Dainippon Ink & Chem Inc Thermosetting urethane elastomer composition
JPH01257018A (en) * 1988-04-07 1989-10-13 Fuji Heavy Ind Ltd Simultaneous monolithic molding method for different kind of foam
US5197999A (en) * 1991-09-30 1993-03-30 National Semiconductor Corporation Polishing pad for planarization
JPH09262759A (en) * 1996-03-28 1997-10-07 Naoetsu Seimitsu Kako Kk Surface processing device
US6062958A (en) * 1997-04-04 2000-05-16 Micron Technology, Inc. Variable abrasive polishing pad for mechanical and chemical-mechanical planarization
JPH11226861A (en) * 1998-02-13 1999-08-24 Toshiba Mach Co Ltd Abrasive cloth and surface polishing device
JPH11333699A (en) * 1998-03-24 1999-12-07 Sony Corp Polishing pad, polishing device and polishing method
JPH11347919A (en) * 1998-06-09 1999-12-21 Oki Electric Ind Co Ltd Device and method for abrading and flattening semi-conductor element
JP2000158325A (en) * 1998-11-26 2000-06-13 Promos Technol Inc Device and method for chemical and mechanical polishing
JP2000176829A (en) * 1998-12-18 2000-06-27 Tdk Corp Polishing device
JP3425894B2 (en) * 1999-05-27 2003-07-14 ロデール ホールディングス インコーポレイテッド How to flatten the surface of a processed product
US6234875B1 (en) * 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
JP2001100545A (en) * 1999-09-30 2001-04-13 Ricoh Co Ltd Intermediate transfer body and image forming device using the intermediate transfer body
US6257973B1 (en) * 1999-11-04 2001-07-10 Norton Company Coated abrasive discs
KR100394572B1 (en) * 2000-12-28 2003-08-14 삼성전자주식회사 multi characterized CMP pad structure and method for fabricating same
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010001756A1 (en) * 1998-04-24 2001-05-24 Applied Materials, Inc. A Delaware Corporation Chemical mechanical polishing with multiple polishing pads
US6413153B1 (en) * 1999-04-26 2002-07-02 Beaver Creek Concepts Inc Finishing element including discrete finishing members
US20030148614A1 (en) * 2002-02-04 2003-08-07 Simpson Alexander William Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
US20040171339A1 (en) * 2002-10-28 2004-09-02 Cabot Microelectronics Corporation Microporous polishing pads

Also Published As

Publication number Publication date
CN1816422B (en) 2011-06-22
WO2005000529A1 (en) 2005-01-06
SG2012073722A (en) 2016-11-29
KR20060017824A (en) 2006-02-27
CN1816422A (en) 2006-08-09
KR101108024B1 (en) 2012-01-25
JP5448177B2 (en) 2014-03-19
WO2005000529A8 (en) 2005-03-17
JP2006526902A (en) 2006-11-24
JP2010135861A (en) 2010-06-17
JP4746540B2 (en) 2011-08-10

Similar Documents

Publication Publication Date Title
SG168412A1 (en) Synthesis of a functionally graded pad for chemical mechanical planarization
US6203413B1 (en) Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
TWI288046B (en) Polishing composition and polishing method
America et al. Slurry additive effects on the suppression of silicon nitride removal during CMP
TWI309190B (en) Method of using a soft subpad for chemical mechanical polishing
AU2003274812A1 (en) Method for chemical mechanical polishing (cmp) of low-k dielectric materials
TWI231245B (en) Method of modifying a surface
WO2004013242A3 (en) Polishing slurry system and metal poslishing and removal process
WO2006133249A3 (en) Integrated chemical mechanical polishing composition and process for single platen processing
WO2004087375A8 (en) Chip customized polish pads for chemical mechanical planarization (cmp)
EP0870577A3 (en) Method for dressing a polishing pad, polishing apparatus, and method for manufacturing a semiconductor apparatus
WO2004072199A3 (en) Mixed-abrasive polishing composition and method for using the same
TW200510116A (en) Materials and methods for chemical-mechanical planarization
CN101568613B (en) Chemical mechanical planarization composition, system, and method of use
JP2004507076A5 (en)
SG177625A1 (en) Grooved cmp polishing pad
MY143823A (en) Compositions and methods for cmp of low-k-dielectric materials
EP1160300A3 (en) Aqueous dispersion for chemical mechanical polishing
WO2004055864A3 (en) Composition and method for copper chemical mechanical planarization
JP2011103460A (en) Method for polishing semiconductor wafer
SG148913A1 (en) Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same
EP1345734B1 (en) Crosslinked polyethylene polishing pad for chemical-mechnical polishing and polishing apparatus
US6846225B2 (en) Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor
Chen et al. Mechano-chemical polishing of silicon wafers
TW200621924A (en) Abrasive particles, polishing slurry, and producing method thereof