WO2004013242A3 - Polishing slurry system and metal poslishing and removal process - Google Patents

Polishing slurry system and metal poslishing and removal process Download PDF

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Publication number
WO2004013242A3
WO2004013242A3 PCT/US2003/024286 US0324286W WO2004013242A3 WO 2004013242 A3 WO2004013242 A3 WO 2004013242A3 US 0324286 W US0324286 W US 0324286W WO 2004013242 A3 WO2004013242 A3 WO 2004013242A3
Authority
WO
WIPO (PCT)
Prior art keywords
slurry
metal
poslishing
removal process
slurry system
Prior art date
Application number
PCT/US2003/024286
Other languages
French (fr)
Other versions
WO2004013242A2 (en
Inventor
Stuart D Hellring
Yuzhuo Li
Robert L Auger
Original Assignee
Ppg Ind Ohio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Ind Ohio Inc filed Critical Ppg Ind Ohio Inc
Priority to JP2004526370A priority Critical patent/JP2006511931A/en
Priority to AU2003257147A priority patent/AU2003257147A1/en
Priority to EP03767120A priority patent/EP1543084A2/en
Publication of WO2004013242A2 publication Critical patent/WO2004013242A2/en
Publication of WO2004013242A3 publication Critical patent/WO2004013242A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)

Abstract

This invention is directed to a slurry system and process of metal removal from a substrate. This invention is useful for polishing a microelectronic device. This invention is especially useful for chemical mechanical planarization of a semiconductor wafer. The slurry system of the present invention includes a first slurry and a second slurry, wherein the first slurry has a higher abrasive concentration than the second slurry. The process of the present invention includes a first polish with the first slurry to partially remove metal from the substrate, and a second polish with the second slurry to further remove metal from the substrate
PCT/US2003/024286 2002-08-05 2003-08-01 Polishing slurry system and metal poslishing and removal process WO2004013242A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004526370A JP2006511931A (en) 2002-08-05 2003-08-01 Polishing slurry system and metal polishing and removal process
AU2003257147A AU2003257147A1 (en) 2002-08-05 2003-08-01 Polishing slurry system and metal poslishing and removal process
EP03767120A EP1543084A2 (en) 2002-08-05 2003-08-01 Process for reducing dishing and erosion during chemical mechanical planarization

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US40110902P 2002-08-05 2002-08-05
US60/401,109 2002-08-05
US10/627,775 2003-07-28
US10/627,775 US20040077295A1 (en) 2002-08-05 2003-07-28 Process for reducing dishing and erosion during chemical mechanical planarization

Publications (2)

Publication Number Publication Date
WO2004013242A2 WO2004013242A2 (en) 2004-02-12
WO2004013242A3 true WO2004013242A3 (en) 2004-06-03

Family

ID=31498656

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/024286 WO2004013242A2 (en) 2002-08-05 2003-08-01 Polishing slurry system and metal poslishing and removal process

Country Status (8)

Country Link
US (2) US20040077295A1 (en)
EP (1) EP1543084A2 (en)
JP (1) JP2006511931A (en)
KR (1) KR20050029726A (en)
CN (1) CN100412153C (en)
AU (1) AU2003257147A1 (en)
TW (1) TW200413489A (en)
WO (1) WO2004013242A2 (en)

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US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
JP3692067B2 (en) * 2001-11-30 2005-09-07 株式会社東芝 Polishing slurry for copper CMP and method of manufacturing semiconductor device using the same
JP4083502B2 (en) * 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド Polishing method and polishing composition used therefor
EP1477538B1 (en) * 2003-05-12 2007-07-25 JSR Corporation Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same
JP4649871B2 (en) * 2003-05-12 2011-03-16 Ｊｓｒ株式会社 Chemical mechanical polishing method using chemical mechanical polishing kit
US7153335B2 (en) * 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
JP2005340328A (en) * 2004-05-25 2005-12-08 Fujitsu Ltd Method of manufacturing semiconductor device
KR100672940B1 (en) * 2004-08-03 2007-01-24 삼성전자주식회사 Metal slurry for cmp and metal cmp method using the same
US20060124026A1 (en) * 2004-12-10 2006-06-15 3M Innovative Properties Company Polishing solutions
US7538035B2 (en) * 2005-03-18 2009-05-26 Hitachi Global Storage Technologies Netherlands B.V. Lapping of gold pads in a liquid medium for work hardening the surface of the pads
KR101126124B1 (en) 2005-05-30 2012-03-30 주식회사 동진쎄미켐 Cerium Oxide Chemical Mechanical Polishing Slurry Composition that enhanced Polishing Non-uniformity
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
US7265055B2 (en) * 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
US8551202B2 (en) * 2006-03-23 2013-10-08 Cabot Microelectronics Corporation Iodate-containing chemical-mechanical polishing compositions and methods
US7772128B2 (en) * 2006-06-09 2010-08-10 Lam Research Corporation Semiconductor system with surface modification
US9058975B2 (en) * 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
US20080149591A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing
US8541310B2 (en) * 2007-05-04 2013-09-24 Cabot Microelectronics Corporation CMP compositions containing a soluble peroxometalate complex and methods of use thereof
US8008202B2 (en) * 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
US20090056231A1 (en) * 2007-08-28 2009-03-05 Daniela White Copper CMP composition containing ionic polyelectrolyte and method
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US7803711B2 (en) * 2007-09-18 2010-09-28 Cabot Microelectronics Corporation Low pH barrier slurry based on titanium dioxide
US20090090696A1 (en) * 2007-10-08 2009-04-09 Cabot Microelectronics Corporation Slurries for polishing oxide and nitride with high removal rates
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
KR101396232B1 (en) * 2010-02-05 2014-05-19 한양대학교 산학협력단 Slurry for polishing phase change material and method for patterning polishing phase change material using the same
DE102010010885B4 (en) * 2010-03-10 2017-06-08 Siltronic Ag Method for polishing a semiconductor wafer
JP5877940B2 (en) * 2010-04-08 2016-03-08 株式会社フジミインコーポレーテッド Method for polishing a wafer with copper and silicon exposed on the surface
US9040473B1 (en) 2010-07-21 2015-05-26 WD Media, LLC Low foam media cleaning detergent with nonionic surfactants
WO2012099845A2 (en) * 2011-01-21 2012-07-26 Cabot Microelectronics Corporation Silicon polishing compositions with improved psd performance
KR101630218B1 (en) 2011-06-30 2016-06-14 생-고뱅 어브레이시브즈, 인코포레이티드 Coated abrasive aggregates and products containing same
US20140134778A1 (en) * 2011-08-09 2014-05-15 Basf Se Aqueous alkaline compositions and method for treating the surface of silicon substrates
US9097994B2 (en) * 2012-01-27 2015-08-04 Sematech, Inc. Abrasive-free planarization for EUV mask substrates
TWI573864B (en) * 2012-03-14 2017-03-11 卡博特微電子公司 Cmp compositions selective for oxide and nitride with high removal rate and low defectivity
US9029308B1 (en) 2012-03-28 2015-05-12 WD Media, LLC Low foam media cleaning detergent
US9005999B2 (en) 2012-06-30 2015-04-14 Applied Materials, Inc. Temperature control of chemical mechanical polishing
CN102786879B (en) * 2012-07-17 2014-04-23 清华大学 Barium titanate chemico-mechanical polishing aqueous composition and its application
SG11201502768UA (en) * 2012-11-02 2015-05-28 Fujimi Inc Polishing composition
SG11201509209VA (en) * 2013-05-15 2015-12-30 Basf Se Chemical-mechanical polishing compositions comprising polyethylene imine
US9227294B2 (en) * 2013-12-31 2016-01-05 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for chemical mechanical polishing
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US10636673B2 (en) * 2017-09-28 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
KR20210018607A (en) * 2019-08-06 2021-02-18 삼성디스플레이 주식회사 Polishing slurry, method for manufacturing a display device using the same and disple device
KR20210076571A (en) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Slurry composition for sti process

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DATABASE HCAPLUS ACS; 28 May 2002 (2002-05-28), XP002275735, retrieved from STN Database accession no. 136:394390 *
See also references of EP1543084A2 *

Also Published As

Publication number Publication date
CN1675327A (en) 2005-09-28
AU2003257147A8 (en) 2004-02-23
US20080090500A1 (en) 2008-04-17
AU2003257147A1 (en) 2004-02-23
KR20050029726A (en) 2005-03-28
US20040077295A1 (en) 2004-04-22
CN100412153C (en) 2008-08-20
TW200413489A (en) 2004-08-01
WO2004013242A2 (en) 2004-02-12
EP1543084A2 (en) 2005-06-22
JP2006511931A (en) 2006-04-06

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