SG11201509209VA - Chemical-mechanical polishing compositions comprising polyethylene imine - Google Patents

Chemical-mechanical polishing compositions comprising polyethylene imine

Info

Publication number
SG11201509209VA
SG11201509209VA SG11201509209VA SG11201509209VA SG11201509209VA SG 11201509209V A SG11201509209V A SG 11201509209VA SG 11201509209V A SG11201509209V A SG 11201509209VA SG 11201509209V A SG11201509209V A SG 11201509209VA SG 11201509209V A SG11201509209V A SG 11201509209VA
Authority
SG
Singapore
Prior art keywords
chemical
mechanical polishing
polishing compositions
polyethylene imine
imine
Prior art date
Application number
SG11201509209VA
Inventor
Yongqing Lan
Peter Przybylski
Zhenyu Bao
Julian Prölss
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201509209VA publication Critical patent/SG11201509209VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
SG11201509209VA 2013-05-15 2014-05-05 Chemical-mechanical polishing compositions comprising polyethylene imine SG11201509209VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13167882 2013-05-15
PCT/IB2014/061201 WO2014184703A2 (en) 2013-05-15 2014-05-05 Chemical-mechanical polishing compositions comprising polyethylene imine

Publications (1)

Publication Number Publication Date
SG11201509209VA true SG11201509209VA (en) 2015-12-30

Family

ID=48366258

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201509209VA SG11201509209VA (en) 2013-05-15 2014-05-05 Chemical-mechanical polishing compositions comprising polyethylene imine

Country Status (11)

Country Link
US (1) US9862862B2 (en)
EP (1) EP2997105A4 (en)
JP (1) JP6377726B2 (en)
KR (1) KR20160010495A (en)
CN (1) CN105229097B (en)
IL (1) IL240809B (en)
MY (1) MY178806A (en)
RU (1) RU2015153455A (en)
SG (1) SG11201509209VA (en)
TW (1) TWI642737B (en)
WO (1) WO2014184703A2 (en)

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TWI650318B (en) * 2017-10-30 2019-02-11 財團法人工業技術研究院 Method for purifying crude product of 2,5-furandicarboxylic acid by crystallization method and method for forming polyester
CN107916076A (en) * 2017-11-24 2018-04-17 安徽睿知信信息科技有限公司 A kind of mobile phone glass polishing material preparation method
JP6962247B2 (en) 2018-03-14 2021-11-05 Jsr株式会社 Semiconductor surface treatment composition and semiconductor surface treatment method
KR20230028826A (en) * 2021-08-23 2023-03-03 삼성에스디아이 주식회사 Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same
CN114507478B (en) * 2022-02-24 2023-05-09 北京通美晶体技术股份有限公司 Polishing solution for gallium arsenide wafer processing and preparation method thereof

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US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
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US20050079803A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Chemical-mechanical planarization composition having PVNO and associated method for use
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KR100672940B1 (en) 2004-08-03 2007-01-24 삼성전자주식회사 Metal slurry for cmp and metal cmp method using the same
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TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
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KR20120134105A (en) 2010-02-01 2012-12-11 제이에스알 가부시끼가이샤 Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same
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KR20130041084A (en) * 2010-06-18 2013-04-24 히타치가세이가부시끼가이샤 Polishing liquid for semiconductor substrate and method for producing semiconductor wafer
US20120190200A1 (en) 2011-01-24 2012-07-26 Clarkson University Abrasive Free Silicon Chemical Mechanical Planarization
WO2012127398A1 (en) * 2011-03-22 2012-09-27 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
WO2012165376A1 (en) * 2011-06-03 2012-12-06 旭硝子株式会社 Polishing agent and polishing method
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Also Published As

Publication number Publication date
CN105229097A (en) 2016-01-06
WO2014184703A2 (en) 2014-11-20
CN105229097B (en) 2017-11-17
JP6377726B2 (en) 2018-08-22
JP2016524324A (en) 2016-08-12
US20160068712A1 (en) 2016-03-10
RU2015153455A (en) 2017-06-20
IL240809A0 (en) 2015-10-29
KR20160010495A (en) 2016-01-27
RU2015153455A3 (en) 2018-03-28
US9862862B2 (en) 2018-01-09
EP2997105A4 (en) 2017-01-25
EP2997105A2 (en) 2016-03-23
IL240809B (en) 2019-05-30
WO2014184703A3 (en) 2015-03-12
MY178806A (en) 2020-10-20
TW201506101A (en) 2015-02-16
TWI642737B (en) 2018-12-01

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