SG11201803364WA - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG11201803364WA
SG11201803364WA SG11201803364WA SG11201803364WA SG11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG11201803364WA
Inventor
Noriaki Sugita
Mika Chinen
Takayuki Matsushita
Shuhei Matsuda
Original Assignee
Nitta Haas Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc filed Critical Nitta Haas Inc
Publication of SG11201803364WA publication Critical patent/SG11201803364WA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/04Acyclic compounds
    • C08F216/06Polyvinyl alcohol ; Vinyl alcohol
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/06Other polishing compositions
    • C09G1/14Other polishing compositions based on non-waxy substances
    • C09G1/16Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201803364WA 2015-10-23 2016-10-20 Polishing composition SG11201803364WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015209327 2015-10-23
PCT/JP2016/081115 WO2017069202A1 (en) 2015-10-23 2016-10-20 Polishing composition

Publications (1)

Publication Number Publication Date
SG11201803364WA true SG11201803364WA (en) 2018-05-30

Family

ID=58557354

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201803364WA SG11201803364WA (en) 2015-10-23 2016-10-20 Polishing composition

Country Status (8)

Country Link
US (1) US10435588B2 (en)
EP (1) EP3366746B1 (en)
JP (1) JP6960336B2 (en)
KR (1) KR20180070586A (en)
CN (1) CN108350344B (en)
SG (1) SG11201803364WA (en)
TW (1) TWI795346B (en)
WO (1) WO2017069202A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110236411A (en) 2017-08-09 2019-09-17 沙克忍者运营有限责任公司 Cooking system
JP7002354B2 (en) * 2018-01-29 2022-02-04 ニッタ・デュポン株式会社 Polishing composition
JP7330676B2 (en) * 2018-08-09 2023-08-22 株式会社フジミインコーポレーテッド Silicon wafer polishing composition
JP7361467B2 (en) * 2018-12-25 2023-10-16 ニッタ・デュポン株式会社 polishing composition
JP7158280B2 (en) * 2018-12-28 2022-10-21 ニッタ・デュポン株式会社 Semiconductor polishing composition
JP7349309B2 (en) * 2019-09-30 2023-09-22 株式会社フジミインコーポレーテッド Polishing composition for silicon wafers
JP7433042B2 (en) * 2019-12-24 2024-02-19 ニッタ・デュポン株式会社 polishing composition
WO2024029457A1 (en) * 2022-08-05 2024-02-08 株式会社フジミインコーポレーテッド Polishing composition

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2003021651A1 (en) * 2001-08-16 2004-12-24 旭化成ケミカルズ株式会社 Polishing solution for metal film and method of manufacturing semiconductor substrate using the same
JP2004172606A (en) * 2002-11-08 2004-06-17 Sumitomo Chem Co Ltd Metal polishing material composition and polishing method
KR100640600B1 (en) * 2003-12-12 2006-11-01 삼성전자주식회사 Slurry compositions, and fabrication method of semiconductor device including CMPchemical mechanical polishing process using the same
KR100725803B1 (en) * 2006-12-05 2007-06-08 제일모직주식회사 Slurry compositions for polishing silicone wafer finally and methods for polishing silicone wafer finally by using the same
JP5235364B2 (en) * 2007-09-05 2013-07-10 日本合成化学工業株式会社 Method for producing polyvinyl alcohol resin having 1,2-diol structure in side chain
DE112008002628B4 (en) * 2007-09-28 2018-07-19 Nitta Haas Inc. polishing composition
JP2009099819A (en) * 2007-10-18 2009-05-07 Daicel Chem Ind Ltd Polishing composition for cmp, and method of manufacturing device wafer using the polishing composition for cmp
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
JP5721505B2 (en) * 2011-04-01 2015-05-20 ニッタ・ハース株式会社 Polishing composition
KR20140059230A (en) * 2011-09-07 2014-05-15 바스프 에스이 A chemical mechanical polishing (cmp) composition comprising a glycoside
WO2013061771A1 (en) * 2011-10-24 2013-05-02 株式会社 フジミインコーポレーテッド Composition for polishing purposes, polishing method using same, and method for producing substrate
SG11201503355WA (en) * 2012-11-30 2015-06-29 Nitta Haas Inc Polishing composition
JP6087143B2 (en) * 2012-12-28 2017-03-01 花王株式会社 Polishing liquid composition for silicon wafer
JP5900913B2 (en) * 2013-03-19 2016-04-06 株式会社フジミインコーポレーテッド Polishing composition, polishing composition manufacturing method and polishing composition preparation kit
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
KR102583709B1 (en) * 2015-03-10 2023-09-26 가부시끼가이샤 레조낙 Abrasives, stock solutions for abrasives, and polishing methods
TWI713611B (en) * 2015-10-23 2020-12-21 日商霓塔杜邦股份有限公司 Polishing composition
US10421890B2 (en) * 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof

Also Published As

Publication number Publication date
WO2017069202A1 (en) 2017-04-27
CN108350344B (en) 2021-02-12
EP3366746B1 (en) 2023-02-22
US20180305580A1 (en) 2018-10-25
JPWO2017069202A1 (en) 2018-08-09
KR20180070586A (en) 2018-06-26
TWI795346B (en) 2023-03-11
EP3366746A4 (en) 2018-10-03
CN108350344A (en) 2018-07-31
EP3366746A1 (en) 2018-08-29
JP6960336B2 (en) 2021-11-05
US10435588B2 (en) 2019-10-08
TW201728734A (en) 2017-08-16

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