SG11201803364WA - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- SG11201803364WA SG11201803364WA SG11201803364WA SG11201803364WA SG11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA SG 11201803364W A SG11201803364W A SG 11201803364WA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- polishing
- composition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
- C08F216/04—Acyclic compounds
- C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015209327 | 2015-10-23 | ||
PCT/JP2016/081115 WO2017069202A1 (en) | 2015-10-23 | 2016-10-20 | Polishing composition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201803364WA true SG11201803364WA (en) | 2018-05-30 |
Family
ID=58557354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201803364WA SG11201803364WA (en) | 2015-10-23 | 2016-10-20 | Polishing composition |
Country Status (8)
Country | Link |
---|---|
US (1) | US10435588B2 (en) |
EP (1) | EP3366746B1 (en) |
JP (1) | JP6960336B2 (en) |
KR (1) | KR20180070586A (en) |
CN (1) | CN108350344B (en) |
SG (1) | SG11201803364WA (en) |
TW (1) | TWI795346B (en) |
WO (1) | WO2017069202A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110236411A (en) | 2017-08-09 | 2019-09-17 | 沙克忍者运营有限责任公司 | Cooking system |
JP7002354B2 (en) * | 2018-01-29 | 2022-02-04 | ニッタ・デュポン株式会社 | Polishing composition |
JP7330676B2 (en) * | 2018-08-09 | 2023-08-22 | 株式会社フジミインコーポレーテッド | Silicon wafer polishing composition |
JP7361467B2 (en) * | 2018-12-25 | 2023-10-16 | ニッタ・デュポン株式会社 | polishing composition |
JP7158280B2 (en) * | 2018-12-28 | 2022-10-21 | ニッタ・デュポン株式会社 | Semiconductor polishing composition |
JP7349309B2 (en) * | 2019-09-30 | 2023-09-22 | 株式会社フジミインコーポレーテッド | Polishing composition for silicon wafers |
JP7433042B2 (en) * | 2019-12-24 | 2024-02-19 | ニッタ・デュポン株式会社 | polishing composition |
WO2024029457A1 (en) * | 2022-08-05 | 2024-02-08 | 株式会社フジミインコーポレーテッド | Polishing composition |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2003021651A1 (en) * | 2001-08-16 | 2004-12-24 | 旭化成ケミカルズ株式会社 | Polishing solution for metal film and method of manufacturing semiconductor substrate using the same |
JP2004172606A (en) * | 2002-11-08 | 2004-06-17 | Sumitomo Chem Co Ltd | Metal polishing material composition and polishing method |
KR100640600B1 (en) * | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | Slurry compositions, and fabrication method of semiconductor device including CMPchemical mechanical polishing process using the same |
KR100725803B1 (en) * | 2006-12-05 | 2007-06-08 | 제일모직주식회사 | Slurry compositions for polishing silicone wafer finally and methods for polishing silicone wafer finally by using the same |
JP5235364B2 (en) * | 2007-09-05 | 2013-07-10 | 日本合成化学工業株式会社 | Method for producing polyvinyl alcohol resin having 1,2-diol structure in side chain |
DE112008002628B4 (en) * | 2007-09-28 | 2018-07-19 | Nitta Haas Inc. | polishing composition |
JP2009099819A (en) * | 2007-10-18 | 2009-05-07 | Daicel Chem Ind Ltd | Polishing composition for cmp, and method of manufacturing device wafer using the polishing composition for cmp |
US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
JP5721505B2 (en) * | 2011-04-01 | 2015-05-20 | ニッタ・ハース株式会社 | Polishing composition |
KR20140059230A (en) * | 2011-09-07 | 2014-05-15 | 바스프 에스이 | A chemical mechanical polishing (cmp) composition comprising a glycoside |
WO2013061771A1 (en) * | 2011-10-24 | 2013-05-02 | 株式会社 フジミインコーポレーテッド | Composition for polishing purposes, polishing method using same, and method for producing substrate |
SG11201503355WA (en) * | 2012-11-30 | 2015-06-29 | Nitta Haas Inc | Polishing composition |
JP6087143B2 (en) * | 2012-12-28 | 2017-03-01 | 花王株式会社 | Polishing liquid composition for silicon wafer |
JP5900913B2 (en) * | 2013-03-19 | 2016-04-06 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing composition manufacturing method and polishing composition preparation kit |
US8906252B1 (en) * | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
KR102583709B1 (en) * | 2015-03-10 | 2023-09-26 | 가부시끼가이샤 레조낙 | Abrasives, stock solutions for abrasives, and polishing methods |
TWI713611B (en) * | 2015-10-23 | 2020-12-21 | 日商霓塔杜邦股份有限公司 | Polishing composition |
US10421890B2 (en) * | 2016-03-31 | 2019-09-24 | Versum Materials Us, Llc | Composite particles, method of refining and use thereof |
-
2016
- 2016-10-20 US US15/769,889 patent/US10435588B2/en active Active
- 2016-10-20 WO PCT/JP2016/081115 patent/WO2017069202A1/en active Application Filing
- 2016-10-20 SG SG11201803364WA patent/SG11201803364WA/en unknown
- 2016-10-20 KR KR1020187011069A patent/KR20180070586A/en not_active Application Discontinuation
- 2016-10-20 CN CN201680061334.7A patent/CN108350344B/en active Active
- 2016-10-20 EP EP16857515.7A patent/EP3366746B1/en active Active
- 2016-10-20 JP JP2017545787A patent/JP6960336B2/en active Active
- 2016-10-21 TW TW105134180A patent/TWI795346B/en active
Also Published As
Publication number | Publication date |
---|---|
WO2017069202A1 (en) | 2017-04-27 |
CN108350344B (en) | 2021-02-12 |
EP3366746B1 (en) | 2023-02-22 |
US20180305580A1 (en) | 2018-10-25 |
JPWO2017069202A1 (en) | 2018-08-09 |
KR20180070586A (en) | 2018-06-26 |
TWI795346B (en) | 2023-03-11 |
EP3366746A4 (en) | 2018-10-03 |
CN108350344A (en) | 2018-07-31 |
EP3366746A1 (en) | 2018-08-29 |
JP6960336B2 (en) | 2021-11-05 |
US10435588B2 (en) | 2019-10-08 |
TW201728734A (en) | 2017-08-16 |
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