SG11201610332PA - Copper barrier chemical-mechanical polishing composition - Google Patents

Copper barrier chemical-mechanical polishing composition

Info

Publication number
SG11201610332PA
SG11201610332PA SG11201610332PA SG11201610332PA SG11201610332PA SG 11201610332P A SG11201610332P A SG 11201610332PA SG 11201610332P A SG11201610332P A SG 11201610332PA SG 11201610332P A SG11201610332P A SG 11201610332PA SG 11201610332P A SG11201610332P A SG 11201610332PA
Authority
SG
Singapore
Prior art keywords
mechanical polishing
polishing composition
copper barrier
barrier chemical
chemical
Prior art date
Application number
SG11201610332PA
Inventor
Lin Fu
Steven Grumbine
Jeffrey Dysard
Wei Weng
Lei Liu
Alexei Leonov
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG11201610332PA publication Critical patent/SG11201610332PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
SG11201610332PA 2014-06-25 2015-06-25 Copper barrier chemical-mechanical polishing composition SG11201610332PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462017073P 2014-06-25 2014-06-25
US201462017100P 2014-06-25 2014-06-25
PCT/US2015/037772 WO2015200684A1 (en) 2014-06-25 2015-06-25 Copper barrier chemical-mechanical polishing composition

Publications (1)

Publication Number Publication Date
SG11201610332PA true SG11201610332PA (en) 2017-02-27

Family

ID=54929831

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201610332PA SG11201610332PA (en) 2014-06-25 2015-06-25 Copper barrier chemical-mechanical polishing composition

Country Status (8)

Country Link
US (1) US9556363B2 (en)
EP (1) EP3161095B8 (en)
JP (2) JP6612790B2 (en)
KR (1) KR102444548B1 (en)
CN (1) CN106661431B (en)
SG (1) SG11201610332PA (en)
TW (1) TWI564380B (en)
WO (1) WO2015200684A1 (en)

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US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
JP6930976B2 (en) 2016-01-06 2021-09-01 シーエムシー マテリアルズ，インコーポレイティド How to polish low K substrate
US10421890B2 (en) * 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
WO2018012173A1 (en) * 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド Polishing composition, method for producing polishing composition, and polishing method
CN110997856B (en) * 2017-08-09 2021-10-29 昭和电工材料株式会社 Polishing liquid and polishing method
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10508221B2 (en) * 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
KR102576499B1 (en) * 2018-09-06 2023-09-07 동우 화인켐 주식회사 Silica Particles for CMP and Preparation Method thereof
WO2020091242A1 (en) * 2018-10-31 2020-05-07 영창케미칼 주식회사 Slurry composition for polishing copper barrier layer
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US10988635B2 (en) 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP
GB201904918D0 (en) * 2019-04-08 2019-05-22 Givaudan Sa Improvements in or relating to organic compounds
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KR102570805B1 (en) * 2019-11-01 2023-08-24 삼성에스디아이 주식회사 Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same
KR102367056B1 (en) * 2020-02-27 2022-02-25 주식회사 케이씨텍 Slurry composition for chemical mechanical polishing
US11384254B2 (en) * 2020-04-15 2022-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate
CN113249175B (en) * 2021-04-27 2023-03-24 上海新阳半导体材料股份有限公司 Application of post-chemical mechanical polishing cleaning solution
KR20220149148A (en) * 2021-04-30 2022-11-08 에스케이씨솔믹스 주식회사 Polishing compostion for semiconductor process and method for manufacturing semiconductor device by using the same
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CN115093795B (en) * 2022-07-04 2023-09-01 深圳市永霖科技有限公司 Magnetorheological polishing solution for ultra-precise polishing of semiconductor wafer

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Also Published As

Publication number Publication date
KR20170026492A (en) 2017-03-08
EP3161095B1 (en) 2021-05-19
EP3161095B8 (en) 2021-07-07
TW201614034A (en) 2016-04-16
WO2015200684A1 (en) 2015-12-30
JP6612790B2 (en) 2019-11-27
KR102444548B1 (en) 2022-09-20
JP2017525796A (en) 2017-09-07
EP3161095A1 (en) 2017-05-03
US20150376463A1 (en) 2015-12-31
CN106661431A (en) 2017-05-10
JP2019206718A (en) 2019-12-05
TWI564380B (en) 2017-01-01
CN106661431B (en) 2019-06-28
US9556363B2 (en) 2017-01-31
EP3161095A4 (en) 2018-07-11
JP6928040B2 (en) 2021-09-01

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