SG10201600570TA - Low dishing copper chemical mechanical planarization - Google Patents

Low dishing copper chemical mechanical planarization

Info

Publication number
SG10201600570TA
SG10201600570TA SG10201600570TA SG10201600570TA SG10201600570TA SG 10201600570T A SG10201600570T A SG 10201600570TA SG 10201600570T A SG10201600570T A SG 10201600570TA SG 10201600570T A SG10201600570T A SG 10201600570TA SG 10201600570T A SG10201600570T A SG 10201600570TA
Authority
SG
Singapore
Prior art keywords
chemical mechanical
mechanical planarization
copper chemical
low dishing
dishing
Prior art date
Application number
SG10201600570TA
Inventor
Shi Xiaobo
Allen Schlueter James
Rose Joseph
Leonard O'neill Mark
Grief Malcolm
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201600570TA publication Critical patent/SG10201600570TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B33/00—Honing machines or devices; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
SG10201600570TA 2015-04-27 2016-01-25 Low dishing copper chemical mechanical planarization SG10201600570TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562153213P 2015-04-27 2015-04-27
US15/001,846 US9978609B2 (en) 2015-04-27 2016-01-20 Low dishing copper chemical mechanical planarization

Publications (1)

Publication Number Publication Date
SG10201600570TA true SG10201600570TA (en) 2016-11-29

Family

ID=55273129

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201600570TA SG10201600570TA (en) 2015-04-27 2016-01-25 Low dishing copper chemical mechanical planarization

Country Status (8)

Country Link
US (1) US9978609B2 (en)
EP (1) EP3088486B1 (en)
JP (1) JP6258982B2 (en)
KR (1) KR101844801B1 (en)
CN (1) CN106085245B (en)
IL (1) IL243755B (en)
SG (1) SG10201600570TA (en)
TW (1) TWI669359B (en)

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WO2017186283A1 (en) * 2016-04-27 2017-11-02 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates
TWI660017B (en) * 2016-07-14 2019-05-21 卡博特微電子公司 Alternative oxidizing agents for cobalt cmp
US11781039B2 (en) * 2016-12-26 2023-10-10 Fujimi Incorporated Polishing composition and polishing method
EP3631045A4 (en) * 2017-05-25 2021-01-27 Fujifilm Electronic Materials U.S.A., Inc. Chemical mechanical polishing slurry for cobalt applications
US11401441B2 (en) * 2017-08-17 2022-08-02 Versum Materials Us, Llc Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US10465096B2 (en) * 2017-08-24 2019-11-05 Versum Materials Us, Llc Metal chemical mechanical planarization (CMP) composition and methods therefore
US10584265B2 (en) * 2017-09-28 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them
CN109971357B (en) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 Chemical mechanical polishing solution
CN109971353B (en) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 Chemical mechanical polishing solution
KR20200010071A (en) * 2018-07-20 2020-01-30 주식회사 동진쎄미켐 Chemical mechanical polishing composition, polishinbg slurry, and polishing method for substrate
CN109402690A (en) * 2018-12-12 2019-03-01 东莞市同欣表面处理科技有限公司 A kind of layers of copper activator and the preparation method and application thereof method
US20200277514A1 (en) 2019-02-28 2020-09-03 Versum Materials Us, Llc Chemical Mechanical Polishing For Copper And Through Silicon Via Applications
KR20200109549A (en) 2019-03-13 2020-09-23 삼성전자주식회사 Polishing slurry and method of manufacturing semiconductor device
US10626298B1 (en) * 2019-03-20 2020-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon
CN110064973A (en) * 2019-03-21 2019-07-30 林德谊 A kind of surface polishing process of copper or copper alloy
WO2021067151A1 (en) * 2019-09-30 2021-04-08 Versum Materials Us, Llc Low dishing copper chemical mechanical planarization
CN110819991B (en) * 2019-11-08 2022-07-15 日月光半导体(上海)有限公司 Etching solution and method for manufacturing package substrate using same
CN115461495A (en) * 2020-04-27 2022-12-09 纳美仕有限公司 Composite copper component
KR20220088115A (en) * 2020-12-18 2022-06-27 주식회사 케이씨텍 Polishing slurry composition
WO2022145654A1 (en) * 2020-12-30 2022-07-07 에스케이씨솔믹스 주식회사 Polishing composition for semiconductor processing, method for preparing polishing composition, and method for manufacturing semiconductor element to which polishing composition is applied
CN115595584A (en) * 2021-07-07 2023-01-13 浙江伟星实业发展股份有限公司（Cn） Bright water for zipper polishing, metal natural-color bright zipper and preparation method thereof

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WO2001060940A1 (en) 2000-02-16 2001-08-23 Rodel Inc Biocides for polishing slurries
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US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
JP4083502B2 (en) 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド Polishing method and polishing composition used therefor
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
JP2005082791A (en) 2003-09-11 2005-03-31 Sumitomo Bakelite Co Ltd Polishing composition
WO2006116770A2 (en) * 2005-04-28 2006-11-02 Advanced Technology Materials, Inc. Method of passivating chemical mechanical polishing compositions for copper film planarization processes
JP2007326916A (en) 2006-06-06 2007-12-20 Nitta Haas Inc Abrasive composition and method for producing abrasive composition
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
US8435421B2 (en) 2007-11-27 2013-05-07 Cabot Microelectronics Corporation Metal-passivating CMP compositions and methods
JP2009147278A (en) 2007-12-18 2009-07-02 Jsr Corp Aqueous dispersant for chemical mechanical polishing, kit for preparing the same, and preparing method for the same
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Also Published As

Publication number Publication date
KR20160127634A (en) 2016-11-04
KR101844801B1 (en) 2018-04-05
TW201708451A (en) 2017-03-01
JP6258982B2 (en) 2018-01-10
CN106085245A (en) 2016-11-09
IL243755A0 (en) 2016-07-31
IL243755B (en) 2021-02-28
CN106085245B (en) 2019-05-07
JP2016208005A (en) 2016-12-08
US20160314989A1 (en) 2016-10-27
EP3088486B1 (en) 2022-06-15
TWI669359B (en) 2019-08-21
US9978609B2 (en) 2018-05-22
EP3088486A1 (en) 2016-11-02

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