TW200420380A - Polishing method - Google Patents

Polishing method

Info

Publication number
TW200420380A
TW200420380A TW092134526A TW92134526A TW200420380A TW 200420380 A TW200420380 A TW 200420380A TW 092134526 A TW092134526 A TW 092134526A TW 92134526 A TW92134526 A TW 92134526A TW 200420380 A TW200420380 A TW 200420380A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
rotational speed
polishing
polishing surface
polishing table
Prior art date
Application number
TW092134526A
Other languages
Chinese (zh)
Inventor
Nobuyuki Takahashi
Hiroomi Torii
Mikihiko Masaki
Hiroshi Biwata
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of TW200420380A publication Critical patent/TW200420380A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A semiconductor wafer (W) and a polishing table (100) are rotated. The polishing table (100) has a polishing surface thereon. The semiconductor wafer (W) is pressed against the polishing surface on the polishing table (100) rotated at a first rotational speed to polish the semiconductor wafer (W). The semiconductor wafer (W) is separated from the polishing surface after the semiconductor wafer (W) is pressed against the polishing surface. Before the semiconductor wafer (W) is separated from the polishing surface, a rotational speed of the polishing table (100) is reduced to a second rotational speed lower than the first rotational speed to provide a difference between a rotational speed of the semiconductor wafer (W) and the rotational speed of the polishing table (100).
TW092134526A 2002-12-10 2003-12-08 Polishing method TW200420380A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002358771A JP2004193289A (en) 2002-12-10 2002-12-10 Polishing method

Publications (1)

Publication Number Publication Date
TW200420380A true TW200420380A (en) 2004-10-16

Family

ID=32500909

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092134526A TW200420380A (en) 2002-12-10 2003-12-08 Polishing method

Country Status (8)

Country Link
US (1) US20050054272A1 (en)
EP (1) EP1595281A1 (en)
JP (1) JP2004193289A (en)
KR (1) KR20050084767A (en)
CN (1) CN1685482A (en)
AU (1) AU2003286421A1 (en)
TW (1) TW200420380A (en)
WO (1) WO2004053966A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459504B (en) * 2011-02-21 2014-11-01 Taiwan Semiconductor Mfg Systems and methods providing an air zone for a chucking stage

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268566A (en) * 2004-03-19 2005-09-29 Ebara Corp Head structure of substrate holding mechanism of chemical mechanical polishing device
JP4787063B2 (en) * 2005-12-09 2011-10-05 株式会社荏原製作所 Polishing apparatus and polishing method
JP5248127B2 (en) * 2008-01-30 2013-07-31 株式会社荏原製作所 Polishing method and polishing apparatus
JP5336799B2 (en) * 2008-09-24 2013-11-06 東京エレクトロン株式会社 Chemical mechanical polishing apparatus, chemical mechanical polishing method and control program
JP5697207B2 (en) * 2011-04-19 2015-04-08 浜井産業株式会社 Double-side polishing apparatus and polishing method
TWI565559B (en) 2011-07-19 2017-01-11 荏原製作所股份有限公司 Polishing device and method
US9308622B2 (en) * 2013-10-18 2016-04-12 Seagate Technology Llc Lapping head with a sensor device on the rotating lapping head
US9744642B2 (en) * 2013-10-29 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry feed system and method of providing slurry to chemical mechanical planarization station
JP6882017B2 (en) * 2017-03-06 2021-06-02 株式会社荏原製作所 Polishing method, polishing equipment, and substrate processing system
US10593603B2 (en) * 2018-03-16 2020-03-17 Sandisk Technologies Llc Chemical mechanical polishing apparatus containing hydraulic multi-chamber bladder and method of using thereof
CN112792735B (en) * 2021-01-20 2022-04-05 北京科技大学 Clamp for inhibiting generation and expansion of grinding and polishing cracks of diamond film and using method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201786A (en) * 1994-01-05 1995-08-04 Sumitomo Electric Ind Ltd Method and apparatus for grinding compound semiconductor wafer
JPH08267357A (en) * 1995-03-31 1996-10-15 Nec Corp Abrasive device of substrate and abrasive method thereof
JP3705670B2 (en) * 1997-02-19 2005-10-12 株式会社荏原製作所 Polishing apparatus and method
US6398621B1 (en) * 1997-05-23 2002-06-04 Applied Materials, Inc. Carrier head with a substrate sensor
US5957751A (en) * 1997-05-23 1999-09-28 Applied Materials, Inc. Carrier head with a substrate detection mechanism for a chemical mechanical polishing system
JPH11254311A (en) * 1998-03-09 1999-09-21 Super Silicon Kenkyusho:Kk Thin-board-shaped work breakage prevention method during grinding
US6132294A (en) * 1998-09-28 2000-10-17 Siemens Aktiengesellschaft Method of enhancing semiconductor wafer release
JP2001023939A (en) * 1999-07-07 2001-01-26 Seiko Epson Corp Polishing method and manufacturing method of semiconductor device
US6663466B2 (en) * 1999-11-17 2003-12-16 Applied Materials, Inc. Carrier head with a substrate detector
JP2001334458A (en) * 2000-05-26 2001-12-04 Ebara Corp Polishing method
JP2002252190A (en) * 2001-02-22 2002-09-06 Toshiba Corp Method of polishing semiconductor substrate and polisher for the semiconductor substrate
US6905392B2 (en) * 2003-06-30 2005-06-14 Freescale Semiconductor, Inc. Polishing system having a carrier head with substrate presence sensing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459504B (en) * 2011-02-21 2014-11-01 Taiwan Semiconductor Mfg Systems and methods providing an air zone for a chucking stage

Also Published As

Publication number Publication date
JP2004193289A (en) 2004-07-08
US20050054272A1 (en) 2005-03-10
EP1595281A1 (en) 2005-11-16
KR20050084767A (en) 2005-08-29
WO2004053966A1 (en) 2004-06-24
AU2003286421A1 (en) 2004-06-30
CN1685482A (en) 2005-10-19

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