JPH08267357A - Abrasive device of substrate and abrasive method thereof - Google Patents

Abrasive device of substrate and abrasive method thereof

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Publication number
JPH08267357A
JPH08267357A JP7572095A JP7572095A JPH08267357A JP H08267357 A JPH08267357 A JP H08267357A JP 7572095 A JP7572095 A JP 7572095A JP 7572095 A JP7572095 A JP 7572095A JP H08267357 A JPH08267357 A JP H08267357A
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Prior art keywords
substrate
polishing
vacuum suction
surface
opening
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Pending
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JP7572095A
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Japanese (ja)
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Akira Isobe
晶 礒部
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Nec Corp
日本電気株式会社
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Abstract

PURPOSE: To have no substrate left behind on an abrasive table after abrasion is oven, and to control an abrasive in-plane distribution as well as to improve the extent of holdability in a substrate during the abrasion. CONSTITUTION: In a substrate holding part 20 holding a backside 12 of a substrate 10 in order to grinda surface side 11 of this substrate 10, a circumferential part around the backside 12 of the substrate 10 is subjected to vacuum suction and thereby it is provided with such a structure as forming the surface side 11 of the substrate 10 into a projection form, and this projection form is maintained in a range from the duration of abrasion to the midst of the separation after the abrasion is over.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は研磨装置及び研磨方法に係わり、特に半導体ウエハ状態の半導体基板上のデバイスの表面を平坦化する研磨装置及び研磨方法に関する。 The present invention relates relates to a polishing apparatus and a polishing method, and more particularly a polishing apparatus and a polishing method for planarizing the surface of the device on a semiconductor substrate of a semiconductor wafer state.

【0002】 [0002]

【従来の技術】研磨により基板表面を平滑化する技術は、半導体基板の作製工程をはじめとし、あらゆる分野で用いられてきた。 BACKGROUND ART technique for smoothing the substrate surface by polishing, and including the manufacturing process of a semiconductor substrate, has been used in various fields. 一方、近年、半導体基板上のデバイス作製工程においても、作製の過程で形成される表面の凹凸、例えば層間絶縁膜表面の凹凸を研磨により平坦化する化学機械研磨法が採用されつつある。 On the other hand, in recent years, even in a device manufacturing process of the semiconductor substrate, unevenness of the surface to be formed by the manufacturing process, for example, while the chemical mechanical polishing method for planarizing by grinding irregularities of the interlayer insulating film surface is employed there. この方法は半導体基板等の基板自体の表面を研磨する方法とは異なる点がいくつかあり、特有の問題を有している。 This method has several differences from the method of polishing a surface of a substrate itself such as a semiconductor substrate, it has a particular problem.

【0003】基板自体の表面の平滑化の場合は、基板の表面を磨くこと、すなわちポリシングが目的であるために比較的軟らかい研磨布が用いられていた。 [0003] For smoothing the surface of the substrate itself, to brush the surface of the substrate, i.e. policing relatively soft polishing cloth has been used for the purpose.

【0004】しかし半導体ウエハ状態の半導体基板上のデバイスの表面を平坦化が目的の場合には、絶対段差の低減が目的であるため、硬めの研磨布が用いられる。 [0004] However, when flattening the surface of the device on a semiconductor substrate of a semiconductor wafer state is of interest, because the reduction of absolute step is the objective, polishing cloth stiffer is used. 硬めの研磨布が用いられると、基板裏面の局所的な厚み変動やゴミ、キズなどが表面の研磨の分布に直接的に影響する。 When polishing cloth stiffer is used, local thickness variation and dust back surface of the substrate, such as flaws directly affect the distribution of the polishing surface.

【0005】これは、基板を研磨布に押しつける圧力が、ゴミなどにより局所的に変化することによる。 [0005] This pressure pressing the substrate against the polishing cloth, by locally varying it by dust. すなわち軟らかい研磨布では比較的広い面積でその変化を吸収してしまうのに対し、硬い研磨布では圧力を分散できないため局所的な研磨レートの不均一が起こるからである。 That soft contrast absorbs the change in a relatively large area in the polishing cloth, because the nonuniformity of local polishing rate can not distribute the pressure occurs in hard polishing cloth.

【0006】これを解決する一方策として、基板裏面と基板保持部の間にインサートパッドと呼ばれる弾力性のある膜を設けている。 [0006] As one measure for solving this problem, there is provided a resilient membrane called insert pads between the substrate back surface and the substrate holding portion. 具体的には商品名DF−200 Specifically, the trade name DF-200
(ロデール社製)等が用いられる。 (Rodel Co., Ltd.) and the like are used. このインサートパッドは例えば、厚さ約0.5mm、圧縮率(1800g/ The insert pad is for example, a thickness of about 0.5 mm, the compression ratio (1800 g /
cm 2で測定、以下同様)32%である。 measured in cm 2, and the same applies hereinafter) of 32%. したがってこの場合、1800g/cm 2の圧力が局所的にかかっても、インサートパッドが160μm変形するので、基板裏面のゴミやキズの大きさがこれ以下であれば研磨の均一性に与える影響を緩和することができる。 In this case, therefore, even if it takes a 1800 g / cm pressure of 2 locally, because the insert pad is 160μm deformed, relieving the impact on the polishing uniformity if dust or scratches size of the substrate back surface is less than this can do. この厚さ、 This thickness,
圧縮率は任意の物を選ぶことが出来る。 The compression ratio can be selected any of those.

【0007】また、硬質研磨布を用いた場合、研磨剤が基板と研磨布の間に入り込み込みにくいため、基板の中央部の研磨レートが低めとなる傾向を示す。 [0007] In the case of using a hard polishing pad, the polishing agent is less likely to write enter between the polishing cloth and the substrate, shows a tendency to polishing rate of the center portion of the substrate becomes lower. このため、 For this reason,
研磨中に基板の中央部の裏面から空気加圧を行い、基板中央部の相対圧力を高めることにより、研磨の面内分布を向上させる方法が現在一般的に用いられている。 Performs air pressurization from the rear surface of the central portion of the substrate during polishing, by increasing the relative pressure of the substrate central portion, the method of improving the in-plane distribution of polishing is used now generally.

【0008】以上説明してきたデバイス表面の凹凸を平坦化するための研磨の際に用いられている基板保持部を図7に示す。 [0008] The substrate holding portion that is used during polishing to flatten the unevenness of the above-described come device surface shown in FIG. 図7において、(A)は断面図であり、 In FIG. 7, (A) is a sectional view,
(B)は(A)を下から視た平面図である。 (B) is a plan view as viewed from below (A).

【0009】基板保持部はその本体5上に基板とほぼ同径の基板装着面にインサートパッド1が設けられ、その周りに、研磨中に基板が飛出すことを防ぐリテーナーリング2が設けられている。 [0009] substrate holder the insert pad 1 is provided on the substrate mounting face of substantially the same diameter as the substrate on which the main body 5, around which it retainer ring 2 is provided to prevent substrate fly out that during polishing there. また基板装着中央部に真空吸着・裏面加圧兼用開口部14が同心円状に形成されている。 The vacuum suction, the backside pressure cum opening 14 is formed concentrically on the substrate mounting the central portion.

【0010】真空吸着・裏面加圧兼用開口部14を通して真空吸着することにより基板の表面(下面)の中央部を凹形状にし、また加工中は同開口部14を通して裏面加圧することにより基板の表面の中央部を凸形状にする必要がある。 [0010] the central portion of the surface of the substrate (bottom surface) in a concave shape by vacuum suction through the vacuum suction, the backside pressure cum opening 14, also during the machining surface of the substrate by applying the backside pressure through the opening 14 it is necessary to make the central portion in a convex shape. したがってこの真空吸着・裏面加圧兼用開口部14は基板装着面の中央部に位置している必要がある。 Therefore this vacuum suction-backside pressure cum opening 14 needs to be located in the center of the substrate mounting face. 具体的には、寸法Nが50mm以下である。 Specifically, dimensions N is less than 50mm. 図7は直径150mm、厚さ625μmの半導体ウエハ状態の半導体基板上のデバイスの表面を平坦化を行なう基板保持部を示し、その中心から半径50mmの同心円上に、 Figure 7 is a diameter of 150 mm, shows the substrate holding unit for performing the flattening surface of the device on a semiconductor substrate of a semiconductor wafer state having a thickness of 625 .mu.m, concentrically radius 50mm from the center,
直径2mmの8個の真空吸着・裏面加圧兼用開口部14 Eight vacuum suction diameter 2 mm · backside pressure cum opening 14
を均等配置して形成している。 It is formed by uniformly arranged. あるいは中心から30m Or 30m from the center
mの同心円上に4個の真空吸着・裏面加圧兼用開口部を均等配置して形成する。 Formed by uniformly arranging the four vacuum adsorption and backside pressure cum openings on concentric m. もしくは、中心から40mmの同心円上に6個の真空吸着・裏面加圧兼用開口部を均等配置して形成し、中心から20mmの同心円上に3個の真空吸着・裏面加圧兼用開口部を均等配置して形成し、 Equal or six vacuum adsorption and backside pressure cum opening on 40mm concentric circle from the center to form evenly arranged, three vacuum adsorption and backside pressure cum opening on 20mm concentric from the center arranged to form,
中心に1個の開口部を形成する。 Form one opening in the center.

【0011】さらに切り換えバルブ72の入力ポートに真空パイプ53および加圧パイプ63を通して真空装置51および加圧装置61がそれぞれ接続し、出力ポートはパイプ73を通して真空吸着・裏面加圧兼用開口部1 Furthermore vacuum device 51 and pressure device 61 is connected through a vacuum pipe 53 and the pressure pipe 63 to the input port of the switching valve 72, the output port is a vacuum suction-backside pressure cum opening 1 through the pipe 73
4に接続している。 It is connected to the 4.

【0012】図8(A)〜(C)を用いて従来の研磨方法を説明する。 [0012] illustrating a conventional polishing method with reference to FIG. 8 (A) ~ (C).

【0013】まず図8(A)において、搬送部等から基板保持部に基板10を装着する。 [0013] First, in FIG. 8 (A), the mounting substrate 10 by the substrate holder from the transport unit or the like. これは、インサートパッド1あるいは基板10の裏面12が水により濡らされた状態で基板の裏面をインサートパッドに接着させ、真空吸着・裏面加圧兼用開口部14を切り換えバルブ72 This causes the back surface of the substrate is bonded to the insert pad in a state where the rear surface 12 of the insert pad 1 or the substrate 10 is wetted by water, the valve 72 switches the vacuum adsorption and backside pressure cum opening 14
により真空装置51に通じさせることにより矢印50に示す真空吸着によりなされる。 It made by vacuum suction of the arrow 50 by providing communication to a vacuum device 51 by. 1kg/cm 2の吸着時圧力が直径2mmの8個の真空吸着・裏面加圧兼用開口部14を通して印加され、かつ従来技術では上記したように開口部14が中心側によっているから、直径150 Adsorption at a pressure of 1 kg / cm 2 is applied through eight vacuum adsorption and backside pressure cum opening 14 having a diameter of 2 mm, and because in the prior art opening 14 as described above is by the central side, diameter 150
mmの半導体ウエハである基板10の表面側(図で研磨テーブルに当接する下面側)11は中央部が周辺部より約50μm持ち上った凹形状となる。 Surface 11 (lower surface side in contact with the polishing table in the drawing) of the substrate 10 is mm semiconductor wafer becomes concave central portion has up has approximately 50μm from the peripheral portion.

【0014】次に図8(B)において、基板10を上面に研磨布が設けられている研磨テーブル30に押しつけ、研磨テーブルと基板保持部を共に回転させる。 [0014] Next, in FIG. 8 (B), the pressed against the polishing table 30 which polishing cloth substrate 10 on the upper surface is provided, together rotate the polishing table and the substrate holding portion. この際に、真空吸着・裏面加圧兼用開口部14を切り換えバルブ72により加圧装置61に通じさせることにより矢印60に示す裏面加圧を行い、基板中心部の荷重が相対的に高くなるようにする。 At this time, perform backside pressure indicated by the arrow 60 by providing communication to the pressure device 61 and the valve 72 switches the vacuum adsorption and backside pressure cum opening 14, so that the load of the center portion of the substrate is relatively high to. そうすることにより、研磨剤の供給量不足で研磨レートが低めとなる基板中央部の研磨レートを向上し、研磨分布の均一性を良くすることができる。 By doing so, it is possible to polishing rate supply shortage of abrasive to improve the polishing rate of the substrate central portion serving as a lower, to improve the uniformity of the polishing distribution. 具体的には、250g/cm 2の加圧時圧力が直径2mmの8個の真空吸着・裏面加圧兼用開口部14 Specifically, 250 g / 8 pieces of vacuum suction of pressurization pressure of cm 2 diameter 2 mm · backside pressure cum opening 14
を通して印加されて、直径150mmの半導体ウエハである基板10の表面側(図で研磨テーブルに当接する下面側)11は中央部が周辺部より約30μm押し下った凸形状となる。 Is applied through the surface side 11 (the lower surface in contact with the polishing table in the drawing) of the substrate 10 is a semiconductor wafer having a diameter of 150mm is the convex central portion fell down for about 30μm from the peripheral portion.

【0015】次に図8(C)において、研磨終了後、裏面加圧60を真空吸着50に切り換え、再び基板をインサートパッドに密着させて基板保持部を研磨テーブル5 [0015] Next, in FIG. 8 (C), the after polishing, switches the backside pressure 60 to the vacuum suction 50, the polishing table 5 the substrate holder is brought into close contact with the substrate to insert the pad again
から持ち上げる。 Lift from. この際は図8(A)と同様に、直径1 Similarly this time is 8 and (A), diameter 1
50mmの半導体ウエハ10の表面側11は中央部が周辺部より約50μm持ち上った凹形状となる。 Surface 11 of the semiconductor wafer 10 of 50mm becomes concave central portion has up has approximately 50μm from the peripheral portion.

【0016】 [0016]

【発明が解決しようとする課題】しかしながらこの従来の研磨装置及び研磨方法では、研磨終了後に基板保持部を研磨テーブルから引き離す際に、研磨テーブル上に基板を残すという問題が生じやすかった。 In However, this prior art polishing apparatus and a polishing method [0006], when separating the substrate holding portion from the polishing table after completion of polishing, the problem of leaving the substrate is likely to occur on the polishing table.

【0017】これは、基板中心部分に裏面加圧用の穴と真空吸着用の穴を兼用とした貫通部を設け、真空吸着→ [0017] It is provided with a penetrating portion for the hole and the hole for vacuum suction of the back pressurization was also used in substrate central portion, the vacuum suction →
裏面加圧→真空吸着を行ない、研磨テーブルに当接する基板の表面側が凹形状→凸形状→凹形状の形状変換を行うからである。 Performs backside pressure → vacuum suction surface side abutting the substrate to the polishing table is because performing the concave → convex → concave shape conversion.

【0018】その結果、図8(C)に示すように、研磨終了後、基板を持ち上げるための真空吸着を行う際に、 [0018] As a result, as shown in FIG. 8 (C), after polishing, when performing vacuum suction to lift the substrate,
インサートパッドが弾力性を持っているために、基板が研磨テーブルに対して吸盤状になり基板が研磨テーブルにはりつくことになり基板が残ってしまうのである。 To insert the pad has elasticity, it is the substrate is a substrate becomes sucker-like with respect to the polishing table leaves a substrate will be cling to the polishing table.

【0019】また、従来の裏面加圧により研磨の分布を制御する方法では、研磨中はリテーナーリングのみにより基板が飛出すのを防止しているから、なんらかの要因により研磨中に基板が飛び出してしまう危険性も大きかった。 [0019] In the method of controlling the distribution of polishing by conventional backside pressure, because during polishing thereby preventing the substrate from jumping out only by the retainer ring, the substrate will jump out during polishing by some reason even greater danger.

【0020】したがって本発明の目的は、研磨終了後に基板が研磨テーブル上に残ることがない研磨装置を提供することである。 [0020] Accordingly, an object of the present invention, the substrate after completion of polishing is to provide a polishing apparatus never remain on the polishing table.

【0021】本発明の他の目的は、研磨終了後に基板が研磨テーブル上に残ることがなく、研磨の面内分布を制御し得る研磨装置及び研磨方法を提供することである。 Another object of the present invention, without the substrate remains on the polishing table after completion of polishing is to provide a polishing apparatus and a polishing method capable of controlling the in-plane distribution of polishing.

【0022】本発明の別の目的は、研磨中の基板の保持性を向上した研磨装置及び研磨方法を提供することである。 [0022] Another object of the present invention is to provide a polishing apparatus and a polishing method with improved retention of the substrate during polishing.

【0023】 [0023]

【課題を解決するための手段】本発明の特徴は、基板の表面側を研磨するために基板装着面に前記基板の裏面側を保持する基板保持部を有する研磨装置において、前記基板保持部は、前記基板の裏面側を真空吸着することにより前記基板の表面側を凸形状にする構造を有している基板の研磨装置にある。 Feature of the present invention SUMMARY OF THE INVENTION, in the polishing apparatus having a substrate holding portion for holding the rear surface side of the substrate on the substrate mounting surface in order to polish the surface of the substrate, the substrate holding portion , certain back side of the substrate to the polishing apparatus of the substrate has a structure that the surface side of the substrate into a convex shape by vacuum suction. ここで前記基板保持部と前記基板との間にインサートパッドを具備することが好ましい。 Here it is preferable to comprise an insert pad between the substrate and the substrate holding portion. また、前記基板保持部の基板装着面の周辺部のみに真空吸着用開口部が形成されていることができる。 Further, it is possible to vacuum suction openings are formed only in the peripheral portion of the substrate mounting face of the substrate holder. あるいは、前記基板保持部の基板装着面の周辺部に真空吸着用開口部が形成され、前記基板装着面の中央部に裏面加圧用開口部が形成されていることができる。 Alternatively, the vacuum suction opening is formed in the peripheral portion of the substrate mounting face of the substrate holder, can the backside pressurizing opening is formed in a central portion of the substrate mounting surface.

【0024】本発明の他の特徴は、基板保持部の基板装着面に基板の裏面側を保持して前記基板の表面側を研磨する基板の研磨方法において、前記基板保持部の基板装着面の周辺部に設けられた真空吸着用開口部を通して前記基板の裏面側の周辺部を真空吸着し、この真空吸着の強さを調整することにより研磨の面内分布を調整する基板の研磨方法にある。 [0024] Another aspect of the present invention, a method of polishing a substrate to polish the surface of the substrate holding the back surface side of the substrate on the substrate mounting surface of the substrate holder, the substrate mounting face of the substrate holder the peripheral portion of the back side of the substrate through the vacuum suction opening provided in the peripheral portion by vacuum suction, in the polishing method of a substrate for adjusting the in-plane distribution of polishing by adjusting the strength of the vacuum suction .

【0025】本発明の別の特徴は、基板保持部の基板装着面に基板の裏面側を保持して前記基板の表面側を研磨する基板の研磨方法において、前記基板保持部の基板装着面の周辺部に設けられた真空吸着用開口部を通して前記基板の裏面側の周辺部を真空吸着すると同時に、前記基板保持部の基板装着面の中央部に設けられた裏面加圧用開口部を通して前記基板の裏面側の中央部を加圧することにより研磨の面内分布を調整する基板の研磨方法にある。 [0025] Another invention features a polishing method of a substrate for polishing the surface of the substrate holding the back surface side of the substrate on the substrate mounting surface of the substrate holder, the substrate mounting face of the substrate holder the peripheral portion of the back side of the substrate through the vacuum suction opening provided in the peripheral portion and at the same time vacuum suction, of the substrate through the back surface pressurizing opening provided in the central portion of the substrate mounting face of the substrate holder in the polishing method of substrate for adjusting the in-plane distribution of polishing by pressurizing the central portion of the back side.

【0026】 [0026]

【作用】上記本発明の基板保持部によれば、真空吸着することにより前記基板の表面側を凸形状にするから、研磨後に真空吸着により基板が研磨テーブルに対して凸形状となり、基板と研磨テーブル上面の研磨布の間に空気が外から入り込み、基板を研磨テーブル上から容易に引き離すことができる。 SUMMARY OF] According to the substrate holder of the present invention, since the surface side of the substrate into a convex shape by vacuum suction, the substrate becomes convex relative to the polishing table by vacuum suction after polishing, the substrate and the polishing enters the air from the outside during the polishing cloth table top, it can be released easily substrate from the polishing table.

【0027】また周辺部に形成した真空吸着用開口部からの吸着の強さの制御により基板の変形量を制御することができ、基板内の相対的荷重をコントロールすることができ、このように研磨中にも基板を真空吸着する方法であるから、研磨中の基板の保持性が向上する。 Further it is possible to control the amount of deformation of the substrate by the intensity control of adsorption from a vacuum suction opening formed in the peripheral portion, it is possible to control the relative load of the substrate, thus since the substrate even during polishing is a method of vacuum suction, thereby improving the retention of the substrate during polishing.

【0028】 [0028]

【実施例】以下、図面を参照して本発明を説明する。 EXAMPLES Hereinafter, with reference to the drawings illustrating the present invention.

【0029】図6は本発明の実施例の研磨装置である化学機械研磨装置の概要を示す図である。 [0029] FIG. 6 is a diagram showing an outline of a chemical mechanical polishing apparatus is polishing apparatus according to an embodiment of the present invention. 支持板31上に研磨布32が貼られた研磨テーブル30上に研磨剤41 Abrasive on the polishing polishing table 30 the fabric 32 is adhered to the support plate 31 41
を流すための研磨剤供給口40が設けられ、本発明の基板保持具20を有している。 Slurry supply port 40 for supplying a is provided, and a substrate holder 20 of the present invention. 研磨剤としてはアルカリ水溶液中にシリカ粒を分散したもの、具体的には商品名I Things as the abrasive agent dispersed silica particles in an alkaline aqueous solution, in particular trade name I
C1(キャボット製)などが用いられる。 Such as C1 (Cabot) is used. 研磨布32は発泡ポリウレタン、具体的には商品名IC1000(ロデール製)などが用いられる。 Polishing cloth 32 is foamed polyurethane, specifically, such as product name IC1000 (manufactured by Rodel) is used. 上面に研磨布32が貼られた研磨テーブル30および基板(半導体ウエハ)10 The polishing table 30 and the substrate polishing cloth 32 is adhered to the upper surface (semiconductor wafer) 10
を保持した基板保持部20は回転機構を有しており、さらに基板保持部20は基板の研磨面すなわち表面側(図で下面側)を研磨テーブル30の研磨布32に加圧する加圧機構を有している。 The substrate holder 20 holding the has a rotating mechanism, further substrate holder 20 is polished surface or the surface of the substrate a pressurizing mechanism for pressurizing the polishing cloth 32 of the polishing table 30 (lower side in the drawing) It has.

【0030】例えば、半導体ウエハ状態の半導体基板の表面側に金属配線が形成され、この金属配線上に形成された層間絶縁膜を上記化学機械研磨装置で研磨する。 [0030] For example, the metal wiring is formed on the surface side of the semiconductor substrate of the semiconductor wafer state, to polish the interlayer insulating film formed on the metal wiring by the chemical mechanical polishing apparatus. すなわち層間絶縁膜の上面の凸部のみに研磨テーブルの研磨布が接触してそこを研磨することにより層間絶縁膜の上面を平坦化する。 That planarizing the upper surface of the interlayer insulating film by polishing it in contact with the polishing cloth of the polishing table only the convex portion of the upper surface of the interlayer insulating film.

【0031】図1は本発明の第1の実施例の研磨装置の基板保持部を示す図であり、(A)は断面図、(B)は(A)を下から視た平面図である。 [0031] Figure 1 is a diagram showing a substrate holding part of the polishing apparatus of the first embodiment of the present invention, (A) is a sectional view, (B) is a plan view from below of (A) .

【0032】基板保持部本体5上に研磨中の基板の飛出し防止のために、基板外径より少し大きい内径を有するリテーナーリング2が設けられ、その内側の基板保持本体5の基板保持面上にはインサートパッド1が設けられている。 [0032] For the prevention jumping of the substrate during polishing on the substrate holder body 5, the retainer ring 2 is provided with an inner diameter slightly larger than the substrate outer diameter, on the substrate holding surface of the substrate holding body 5 of the inner insert pad 1 is provided on. インサートパッド1は具体的には前述した商品名DF−200(ロデール社製)等が用いられる。 Insert pad 1 such as a trade name DF-200 described above (Rodel Inc.) are specifically used. 基板の真空吸着用開口部3は図2に示すように基板周辺部に同心円状に配置している。 Vacuum suction opening 3 of the substrate are arranged concentrically substrate peripheral portion as shown in FIG.

【0033】例えば、リテーナーリング2の内径は6インチ半導体ウエハが内部に装着できるように約153m [0033] For example, the inner diameter of the retainer ring 2 is about as 6 inches semiconductor wafer can be mounted within 153m
mであり、そこから内方向に寸法L離間した同心円上に12個の直径2mmの真空吸着用開口部3が基板保持部本体5およびインサートパッド1を貫通して均一に分布して形成されている。 A m, 12 pieces of 2mm diameter vacuum suction opening 3 of the is formed by uniformly distributed through the substrate holder body 5 and the insert pad 1 to the inner direction dimension L spaced concentrically therefrom there. この実施例のインサートパッド1 Insert pad 1 of this embodiment
の圧縮率は32%である。 The compression ratio is 32%.

【0034】真空吸着用開口部3から真空吸着することにより半導体ウエハの表面(下面)の中央部を凸形状にする必要があるから、真空吸着用開口部3は基板保持面の周辺部に形成される。 [0034] The central portion because it is necessary to convex shape of the surface of the semiconductor wafer (lower surface), a vacuum suction opening 3 by vacuum suction from the vacuum suction opening 3 is formed in a peripheral portion of the substrate holding surface It is. したがって半導体ウエハの大きさあるいはインサートパッドの厚さや圧縮率により異なるが実際上はLが20mm以下であることが好ましく、 Thus it is different in practice by the thickness and compressibility of the size or the insert pad of the semiconductor wafer is preferably L is 20mm or less,
この実施例ではL=15mmである。 In this embodiment it is L = 15 mm.

【0035】また各真空吸着用開口部3は真空パイプ5 Further opening 3 for each vacuum suction vacuum pipe 5
3を通して開閉バルブ52の一方のポートに接続し、この開閉バルブ52の他方のポートと真空ポンプ等を含む真空装置51とが接続している。 3 is connected to one port of the switch valve 52 through a vacuum apparatus 51 including the other port and a vacuum pump or the like of the opening and closing valve 52 is connected.

【0036】次にこの研磨装置による研磨方法を図2 [0036] Next, FIG. 2 a polishing method according to this polishing apparatus
(A),(B)を用いて説明する。 (A), it is described with reference to (B).

【0037】まず図2(A)において、搬送部等から基板保持部20に基板10を装着する。 [0037] First, in FIG. 2 (A), the mounting substrate 10 to the substrate holder 20 from the conveying section or the like. この実施例の基板は、半導体素子や層間絶縁膜を具備する配線構造が形成された表面側11と裏面側12を有する厚さ625μm Substrate of this embodiment, the thickness of 625μm having a surface side 11 and back side 12 of the wiring structure having a semiconductor device or an interlayer insulating film is formed
の6インチ(152mm)半導体ウエハ10である。 6 inches (152mm), which is a semiconductor wafer 10. これは、インサートパッド1あるいは半導体ウエハ10の裏面12が水により濡らされた状態で半導体ウエハ10 This semiconductor wafer 10 in a state where the rear surface 12 of the insert pad 1 or the semiconductor wafer 10 is wetted by water
の裏面12をインサートパッド1に接着させ、開閉バルブ52を開にして真空吸着用開口部3を真空装置51に通じさせることにより矢印50に示す真空吸着によりなされる。 To adhere the backside 12 to the insert pad 1, made by vacuum suction of the arrow 50 by establishing communication openings 3 for vacuum suction vacuum device 51 to close valve 52 to open. 1kg/cm 2の吸着時圧力(負圧力)が周辺部の直径2mmの8個の真空吸着用開口部3を通して印加されることにより、半導体ウエハ10の表面側(図で研磨テーブルに当接する下面側)11は中央部が周辺部より押し下った凸形状となる。 By 1 kg / cm 2 adsorption at a pressure (negative pressure) is applied through eight vacuum suction opening 3 having a diameter of 2mm in the peripheral portion, the lower surface in contact with the polishing table at the surface side (FIG semiconductor wafer 10 side) 11 is a convex shape in which the central portion fell pushed from the periphery.

【0038】次に図2(B)において、半導体ウエハ1 [0038] Next 2 (B), the semiconductor wafer 1
0の中央凸形状の表面側11を研磨テーブル30の研磨布に押しつけ、研磨テーブルと基板保持部を共に回転させる。 The surface 11 of the central convex of 0 pressed against the polishing cloth of the polishing table 30, both rotate the polishing table and the substrate holding portion. この際に、真空吸着を引続き行う。 In this case, subsequently performing vacuum suction. これにより、 As a result,
基板周辺部のインサートパッド1が圧縮され、基板の表面側(研磨テーブルに当接する側)が凸部状に変形し、 Insert pad 1 of the substrate peripheral portion is compressed, the surface side of the substrate (side abutting on the polishing table) is deformed in a convex portion shape,
基板中心部の荷重が相対的に高くなる。 Load of the center portion of the substrate is relatively high. これにより研磨剤の供給量不足で研磨レートが低めとなる基板中央部の研磨レートを向上し、研磨分布の均一性を良くすることができる。 Thereby polishing rate supply shortage of abrasive to improve the polishing rate of the substrate central portion serving as a lower, to improve the uniformity of the polishing distribution.

【0039】研磨条件、インサートパッドの厚さや弾性率、真空吸着開口の配置や大きさによりたがいに変化するので、これらを最適な条件に選ぶ必要がある。 The polishing conditions, the thickness and the elastic modulus of the insert pad, since changes from one another by the arrangement and size of the vacuum suction opening, it is necessary to select them in optimum conditions.

【0040】場合によっては、研磨の途中で真空吸着の強さを変化させてもよい。 [0040] In some cases, it may change the strength of the vacuum suction in the course of polishing. 例えばこの実施例では真空装置51内の制御機構を制御することにより研磨中の吸着力50を600g/cm 2と図2(A)の状態より弱めることにより表面中央部の研磨中の凸形状変形量を最適の30μmとなるようにコントロールしている。 For example convex deformation during polishing of the surface central portion by weakening compared with the state of the suction force 50 in the polishing 600 g / cm 2 and FIG. 2 (A) by controlling the control mechanism of the vacuum apparatus 51 in this embodiment amount of being controlled so that the optimum of 30μm.

【0041】このように真空吸着力を弱めても研磨中に基板を吸着していることにかわりがないから、基板が飛出す危険性が従来よりも低減させている。 [0041] Since there is no such remains that are adsorbed substrate during polishing even weaken the vacuum suction force, the substrate is lurch risk is reduced than before.

【0042】研磨終了後、真空吸着を行ったまま、研磨テーブルから基板保持部を引き離す。 [0042] After the polishing, while performing vacuum suction, separate the substrate holding portion from the polishing table. この際に基板は研磨テーブルに対して表面(下面)11が凸状に変形しているままであるため、基板と研磨テーブル上面の研磨布の間に空気が入り込むことができ、容易に研磨テーブルから引き離すことができる。 Since the surface (lower surface) 11 substrate against the polishing table at this time remains is deformed in a convex shape, air can enter between the polishing pad substrate and the polishing table top, easily polished table it can be released from.

【0043】図3は本発明の第2の実施例の研磨装置の基板保持部を示す図であり、(A)は断面図、(B)は(A)を下から視た平面図である。 [0043] Figure 3 is a diagram showing a substrate holding part of the polishing apparatus of the second embodiment of the present invention, (A) is a sectional view, (B) is a plan view from below of (A) . 尚、図3において図1と同一もしくは類似の機能の箇所は同じ符号を付けてあるから重複する説明は省略する。 Note that portions in FIG. 1 and the same or similar functions are duplicated because are given the same reference numerals described in FIG. 3 will be omitted.

【0044】この例では、基板保持部の中央部に裏面加圧用開口部4を周辺部の真空吸着用開口部3と別に設けている。 [0044] In this example, it provided separately from the back pressurizing opening 4 periphery vacuum suction opening 3 of the the center of the substrate holder. この裏面加圧用開口部4はここから裏面加圧することにより半導体ウエハの表面(下面)の中央部を凸形状にする必要があるからその中心からの寸法Mは20 Size M from the center because the backside pressurization opening 4 is a central portion of the surface (lower surface) of the semiconductor wafer needs to be in a convex shape by the pressure back face pressure from here 20
mm以下が好ましく、この実施例ではM=10mmの同心円上に直径2mmの8個の裏面加圧用開口部4が均一に分布して形成されている。 The following are preferred mm, 8 pieces of the back pressurization opening 4 having a diameter of 2mm on a concentric circle of the M = 10 mm are formed uniformly distributed in this embodiment. また裏面加圧用開口部4は加圧パイプ63を通して開閉バルブ62の一方のポートに接続し、この開閉バルブ62の他方のポートと圧縮空気配管や圧縮窒素ボンベ等の加圧装置61とが接続している。 The back side pressurizing opening 4 is connected to one port of the switch valve 62 through the pressure pipe 63, the pressure device 61, such as the other port and the compressed air pipe or compressed nitrogen cylinder of the closing valve 62 is connected ing.

【0045】これにより周辺部の真空吸着と中央部の裏面加圧とを同時にかつそれぞれ独立に制御することができる。 [0045] Thus it is possible to control a back pressure of vacuum attraction and the central portion of the peripheral portion simultaneously and independently.

【0046】次に図4および図5の断面図を参照して、 [0046] Next, with reference to sectional views of FIGS. 4 and 5,
図3の構造を用いた研磨方法をそれぞれ説明する。 Polishing method will be described respectively with reference to the structure of FIG.

【0047】図4の方法では、研磨中は開閉バルブ62 [0047] In the method of FIG. 4, during the polishing-off valve 62
を開にして中心部の裏面加圧用開口部6より250g/ From the rear pressurizing opening 6 of the central portion and to open 250 g /
cm 2の圧縮窒素ガスによる裏面加圧60を行い30μ 30μ performed backside pressure 60 with compressed nitrogen gas cm 2
mの凸形状を中央に形成して研磨の面内分布を制御する。 The m of convex shape formed in the central control the in-plane distribution of polishing. この図4の方法は、研磨中に真空系の開閉バルブ5 The method of Figure 4, the switch valve 5 of the vacuum system during polishing
2は閉状態で真空吸着していないから、半導体ウエハ1 Since 2 is not vacuum suction in the closed state, the semiconductor wafer 1
0とリテーナーリング2との組み合わせにおいて真空吸着を研磨中に行なわなくても基板が飛び出す懸念がない場合に適用できる。 0 and even without performed during polishing of the vacuum suction in combination with the retainer ring 2 can be applied when there is no fear that the substrate pop out. またこの実施例の方法の場合にはインサードパッド1の圧縮率は特に問題としない。 The compression ratio of the in-third pad 1 in the case of the method of this embodiment is not particularly problematic.

【0048】研磨終了後の持ち上げ時には、真空系の開閉バルブ52を開にして周辺部の真空吸着用開口部3より真空吸着することにより、第1の実施例と同様に、研磨テーブル5上に基板がはりつくことを防止する。 [0048] Lifting after completion of polishing, by vacuum suction from the vacuum suction opening 3 of the peripheral portion to the opening and closing valve 52 of the vacuum system in the open, as in the first embodiment, on the polishing table 5 the substrate to prevent the stick.

【0049】図5の方法では、研磨中に開閉バルブ62 [0049] In the method of FIG. 5, the opening and closing during polishing valve 62
を開にして中心部の裏面加圧用開口部6より250g/ From the rear pressurizing opening 6 of the central portion and to open 250 g /
cm 2の圧縮窒素ガスによる裏面加圧60を行うと同時に、開閉バルブ52も開にして周辺部の真空吸着用開口部3より250g/cm 2の吸引力の真空吸着50を行い、さらに凸形状を強めて表面中央部を表面周辺部より40μm突出させることができると同時に、裏面加圧を行いながらも真空吸着していることにより、研磨中の基板の保持性を向上している。 simultaneously performing backside pressure 60 with compressed nitrogen gas cm 2, the opening and closing valve 52 is also subjected to suction force of the vacuum suction 50 of 250 g / cm 2 of the vacuum suction opening 3 of the peripheral portion in the open, further convex shape At the same time it is possible to 40μm protrude from the surface peripheral portion of the surface central portion strengthen, by being vacuum suction while performing backside pressure, and improve the retention of the substrate during polishing. またこの実施例の方法の場合にはインサードパッド1の圧縮率は4%である。 The compression ratio of the in-third pad 1 in the case of the method of this embodiment is 4%.

【0050】 [0050]

【発明の効果】以上説明したように本発明によれば、研磨後に基板を真空吸着する際に基板が研磨テーブルに対して凸形状に変形するので、基板と研磨布の間に空気が入り込み、容易に研磨テーブル上から基板を引き離すことができる。 According to the present invention as described in the foregoing, since the substrate when the vacuum suction of the substrate after polishing is deformed into a convex shape with respect to the polishing table, air enters between the substrate and the polishing pad, it can separate the substrate from the easily polished table.

【0051】また、周辺に設けた開口部から基板を吸着する強さの制御により基板の変形量を制御することができ、基板内の相対的荷重をコントロールすることができる。 [0051] Further, it is possible to control the amount of deformation of the substrate by controlling the intensity of adsorbing the substrate through an opening provided in the periphery, it is possible to control the relative load of the substrate. これにより、従来の裏面加圧方式と同様に研磨の面内分布を制御することができる。 Thus, it is possible to control the in-plane distribution of polishing as in the conventional back surface pressing method.

【0052】さらに中心部に裏面加圧用の開口部を配置し、周辺部に真空吸着用の開口部を配置し、それらを独立させることにより、裏面加圧による研磨の面内分布の制御をより綿密に行なうことができ、かつ研磨終了後のはりつきの問題を同時に解決することができる。 [0052] Furthermore center an opening of the back pressurization arranged, the opening for vacuum suction disposed in the peripheral portion, by independently thereof, more control of the in-plane distribution of the polishing by the backside pressure it can closely performed, and can be solved polishing after completion of the sticking of the problems simultaneously.

【0053】さらに、研磨中にも基板を真空吸着する方法にすることができるから、研磨中の基板の保持性が向上し、飛出しによる基板の破損の危険を低減することができる。 [0053] Further, since the substrate also during polishing can be in a method of vacuum suction, improves the retention of the substrate during polishing, it is possible to reduce the risk of substrate damage due to jump out.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の第1の実施例の研磨装置における基板保持部を主に示す図であり、(A)は断面図、(B)は(A)を下から視た平面図である。 Is a diagram mainly showing the substrate holding section in the polishing apparatus of the first embodiment of the invention, FIG, (A) is a sectional view, (B) is a plan view from below of (A) .

【図2】図1の基板保持部を用いた研磨方法をステップ順に示す断面図である。 The [2] polishing method using the substrate holder of FIG. 1 is a sectional view showing the order of steps.

【図3】本発明の第2の実施例の研磨装置における基板保持部を主に示す図であり、(A)は断面図、(B)は(A)を下から視た平面図である。 Figure 3 is a view mainly showing the substrate holding section in the polishing apparatus of the second embodiment of the present invention, (A) is a sectional view, (B) is a plan view from below of (A) .

【図4】図3の基板保持部を用いた研磨方法の一例を示す断面図である。 Is a cross-sectional view showing an example of a polishing method using the substrate holder of FIG. 3. FIG.

【図5】図3の基板保持部を用いた研磨方法の他の例を示す断面図である。 5 is a sectional view showing another example of a polishing method using the substrate holder of FIG.

【図6】化学機械研磨装置の概略を示す図である。 6 is a diagram showing an outline of a chemical mechanical polishing apparatus.

【図7】従来技術の研磨装置における基板保持部を主に示す図であり、(A)は断面図、(B)は(A)を下から視た平面図である。 Figure 7 is a view mainly showing the substrate holding section in the polishing apparatus of the prior art, (A) is a sectional view, the (B) is a plan view as viewed from below (A).

【図8】図7の基板保持部を用いた従来技術の研磨方法をステップ順に示す断面図である。 [8] The prior art polishing method using the substrate holder of FIG. 7 is a sectional view showing the order of steps.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 インサートパッド 2 リテーナーリング 3 真空吸着用開口部 4 裏面加圧用開口部 5 基板保持部本体 10 半導体ウエハ(基板) 11 半導体ウエハの表面側 12 半導体ウエハの裏面側 14 真空吸着・裏面加圧兼用開口部 20 基板保持部 30 研磨テーブル 31 支持板 32 研磨布 40 研磨剤供給口 41 研磨剤 50 真空吸着 51 真空装置 52,62 開閉バルブ 53 真空パイプ 60 裏面加圧 61 加圧装置 63 加圧パイプ 72 切り換えバルブ 73 パイプ 1 insert pad 2 retainer ring 3 vacuum suction opening 4 back side pressurizing opening 5 substrate holder body 10 the semiconductor wafer (substrate) 11 rear side 14 vacuum suction, the backside pressure cum opening surface side 12 a semiconductor wafer of a semiconductor wafer part 20 substrate holder 30 polishing table 31 supporting plate 32 the polishing pad 40 polishing agent supply port 41 abrasive 50 vacuum suction 51 vacuum device 52, 62 on-off valve 53 a vacuum pipe 60 back surface pressure 61 pressurizing device 63 the pressure pipe 72 is switched valve 73 pipe

Claims (6)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 基板の表面側を研磨するために基板装着面に前記基板の裏面側を保持する基板保持部を有する研磨装置において、前記基板保持部は、前記基板の裏面側を真空吸着することにより前記基板の表面側を凸形状にする構造を有していることを特徴とする基板の研磨装置。 1. A polishing apparatus having a substrate holding portion for holding the rear surface side of the substrate on the substrate mounting surface in order to polish the surface of the substrate, the substrate holder, the vacuum suction back side of the substrate polishing apparatus of the substrate, characterized in that it has a structure that the surface side of the substrate into a convex shape by.
  2. 【請求項2】 前記基板保持部と前記基板との間にインサートパッドを具備したことを特徴とする請求項1記載の基板の研磨装置。 Wherein said polishing apparatus substrate according to claim 1, characterized by including an insert pad between the substrate holding portion and the substrate.
  3. 【請求項3】 前記基板保持部の基板装着面の周辺部のみに真空吸着用開口部が形成されていることを特徴とする請求項1記載の基板の研磨装置。 3. A polishing apparatus substrate according to claim 1, wherein the vacuum suction opening only in the peripheral portion of the substrate mounting face of the substrate holding portion is formed.
  4. 【請求項4】 前記基板保持部の基板装着面の周辺部に真空吸着用開口部が形成され、前記基板装着面の中央部に裏面加圧用開口部が形成されていることを特徴とする請求項1記載の基板の研磨装置。 4. A vacuum suction opening is formed in the peripheral portion of the substrate mounting face of the substrate holder, wherein, wherein the back surface pressurizing opening in the center of the substrate mounting face is formed polishing apparatus of the substrate in claim 1.
  5. 【請求項5】 基板保持部の基板装着面に基板の裏面側を保持して前記基板の表面側を研磨する基板の研磨方法において、前記基板保持部の基板装着面の周辺部に設けられた真空吸着用開口部を通して前記基板の裏面側の周辺部を真空吸着し、この真空吸着の強さを調整することにより研磨の面内分布を調整することを特徴とする基板の研磨方法。 5. A method of polishing a substrate by holding the back surface side of the substrate on the substrate mounting surface of the substrate holding portion polishing the surface side of the substrate, provided in the peripheral portion of the substrate mounting face of the substrate holder peripheral portion of the back side of the substrate through the vacuum suction openings and vacuum suction method of polishing a substrate, which comprises adjusting the in-plane distribution of polishing by adjusting the strength of the vacuum suction.
  6. 【請求項6】 基板保持部の基板装着面に基板の裏面側を保持して前記基板の表面側を研磨する基板の研磨方法において、前記基板保持部の基板装着面の周辺部に設けられた真空吸着用開口部を通して前記基板の裏面側の周辺部を真空吸着すると同時に、前記基板保持部の基板装着面の中央部に設けられた裏面加圧用開口部を通して前記基板の裏面側の中央部を加圧することにより研磨の面内分布を調整することを特徴とする基板の研磨方法。 6. A method of polishing a substrate by holding the back surface side of the substrate on the substrate mounting surface of the substrate holding portion polishing the surface side of the substrate, provided in the peripheral portion of the substrate mounting face of the substrate holder at the same time as vacuum suction peripheral portion of the back surface side of the substrate through a vacuum suction opening, a central portion of the back side of the substrate through the back surface pressurizing opening provided in the central portion of the substrate mounting face of the substrate holder method of polishing a substrate, which comprises adjusting the in-plane distribution of polishing by pressurizing.
JP7572095A 1995-03-31 1995-03-31 Abrasive device of substrate and abrasive method thereof Pending JPH08267357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7572095A JPH08267357A (en) 1995-03-31 1995-03-31 Abrasive device of substrate and abrasive method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7572095A JPH08267357A (en) 1995-03-31 1995-03-31 Abrasive device of substrate and abrasive method thereof

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JPH08267357A true true JPH08267357A (en) 1996-10-15

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JP7572095A Pending JPH08267357A (en) 1995-03-31 1995-03-31 Abrasive device of substrate and abrasive method thereof

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000202762A (en) * 1998-12-30 2000-07-25 Applied Materials Inc Carrier head having controllable pressure of chemical mechanical polishing and loading area
JP2002170796A (en) * 2000-12-04 2002-06-14 Tokyo Seimitsu Co Ltd Wafer polishing apparatus
JP2004518270A (en) * 2000-08-31 2004-06-17 マルチプレーナーテクノロジーズ インコーポレーテッド Chemical mechanical polishing (cmp) head, apparatus and method, and a planarized semiconductor wafer manufactured thereby
WO2004053966A1 (en) * 2002-12-10 2004-06-24 Ebara Corporation Polishing method
JP2008114349A (en) * 2006-11-07 2008-05-22 Disco Abrasive Syst Ltd Wafer grinding method and device
JP2009260317A (en) * 2008-04-12 2009-11-05 Erich Thallner Device and method for adding wafer to carrier and/or separating from carrier
JP2014166678A (en) * 2014-04-18 2014-09-11 Ebara Corp Polishing device
US9073170B2 (en) 2010-09-08 2015-07-07 Ebara Corporation Polishing apparatus having thermal energy measuring means

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63144954A (en) * 1986-12-08 1988-06-17 Speedfam Co Ltd Plane polishing device
JPH01101386A (en) * 1987-10-13 1989-04-19 Japan Silicon Co Ltd Bonding of wafer
JPH07241764A (en) * 1994-03-04 1995-09-19 Fujitsu Ltd Polishing device and polishing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63144954A (en) * 1986-12-08 1988-06-17 Speedfam Co Ltd Plane polishing device
JPH01101386A (en) * 1987-10-13 1989-04-19 Japan Silicon Co Ltd Bonding of wafer
JPH07241764A (en) * 1994-03-04 1995-09-19 Fujitsu Ltd Polishing device and polishing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000202762A (en) * 1998-12-30 2000-07-25 Applied Materials Inc Carrier head having controllable pressure of chemical mechanical polishing and loading area
JP2004518270A (en) * 2000-08-31 2004-06-17 マルチプレーナーテクノロジーズ インコーポレーテッド Chemical mechanical polishing (cmp) head, apparatus and method, and a planarized semiconductor wafer manufactured thereby
JP2002170796A (en) * 2000-12-04 2002-06-14 Tokyo Seimitsu Co Ltd Wafer polishing apparatus
WO2004053966A1 (en) * 2002-12-10 2004-06-24 Ebara Corporation Polishing method
JP2008114349A (en) * 2006-11-07 2008-05-22 Disco Abrasive Syst Ltd Wafer grinding method and device
JP2009260317A (en) * 2008-04-12 2009-11-05 Erich Thallner Device and method for adding wafer to carrier and/or separating from carrier
US9073170B2 (en) 2010-09-08 2015-07-07 Ebara Corporation Polishing apparatus having thermal energy measuring means
US9149903B2 (en) 2010-09-08 2015-10-06 Ebara Corporation Polishing apparatus having substrate holding apparatus
JP2014166678A (en) * 2014-04-18 2014-09-11 Ebara Corp Polishing device

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