JPH07201786A - Method and apparatus for grinding compound semiconductor wafer - Google Patents
Method and apparatus for grinding compound semiconductor waferInfo
- Publication number
- JPH07201786A JPH07201786A JP1139994A JP1139994A JPH07201786A JP H07201786 A JPH07201786 A JP H07201786A JP 1139994 A JP1139994 A JP 1139994A JP 1139994 A JP1139994 A JP 1139994A JP H07201786 A JPH07201786 A JP H07201786A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- wafer
- pressure head
- wafers
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、集積回路や、発光素
子、受光素子などの基板に用いられる化合物半導体基板
の研磨方法に関する。化合物半導体というのは、ＧａＡ
ｓ、ＩｎＰ、ＩｎＳｂなどの半導体を言う。これらの単
結晶は、水平ブリッジマン法や、液体封止チョクラルス
キ−法などによって作られる。これは細長いインゴット
である。インゴットを内周刃ブレ−ドにより薄く切断す
る。これがアズカットウエハである。アズカットウエハ
はエッチング、ラッピング、ポリシング（研磨）により
ミラ−ウエハになる。この発明は、この工程の内、ポリ
シングに関する。特に研磨の後処理に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for polishing a compound semiconductor substrate used as a substrate for an integrated circuit, a light emitting element, a light receiving element or the like. Compound semiconductors are GaA
It refers to semiconductors such as s, InP, and InSb. These single crystals are produced by the horizontal Bridgman method, the liquid sealed Czochralski method, or the like. This is a long and narrow ingot. Thinly cut the ingot with the inner blade. This is an as-cut wafer. The as-cut wafer becomes a mirror wafer by etching, lapping, and polishing (polishing). The present invention relates to polishing in this process. In particular, it relates to post-treatment of polishing.
【０００２】[0002]
【従来の技術】化合物半導体基板、例えばＧａＡｓの研
磨は、ＮａＣｌＯ（次亜塩素酸ナトリウム）水溶液を研
磨液とし、ポリウレタン系の人工皮革ポリッシャ（研磨
布）を用いて行なわれる場合が多い。化合物半導体の研
磨については例えば、「超精密研磨・鏡面加工技術総合
技術資料集」ｐ３８７〜３８９、昭和６２年１０月３１
日、経営開発センタ−刊行」に記載される。研磨液は化
学的な作用によりウエハを削り、研磨布は物理的にウエ
ハを削る。研磨装置は、定盤と加圧ヘッドなどよりな
る。加圧ヘッドの下面にはウエハをいくつか貼り付け、
回転する定盤に当てて加圧ヘッドを回転し、研磨液を定
盤の上に供給しながら定盤も回転する。加圧ヘッドの自
転と、定盤の公転を組み合わせた運動により、ウエハが
次第に削られてゆく。最近では調合済みの研磨液が市販
されている。これも次亜塩素酸ナトリウムを主成分とし
ており同様の作用によりウエハを研磨してゆくことがで
きる。2. Description of the Related Art Polishing of a compound semiconductor substrate such as GaAs is often carried out by using an aqueous solution of NaClO (sodium hypochlorite) as a polishing liquid and using a polyurethane-based artificial leather polisher (polishing cloth). Regarding the polishing of compound semiconductors, for example, “Technical data collection for ultra-precision polishing / mirror-finishing technology” p387-389, October 31, 1987.
Japan Business Development Center-Publishing ". The polishing liquid scrapes the wafer by a chemical action, and the polishing cloth physically scrapes the wafer. The polishing device includes a surface plate and a pressure head. Stick some wafers on the bottom of the pressure head,
The pressure head is rotated against the rotating surface plate, and the surface plate is also rotated while supplying the polishing liquid onto the surface plate. The wafer is gradually scraped by the movement that combines the rotation of the pressure head and the revolution of the surface plate. Recently, a prepared polishing liquid is commercially available. This also has sodium hypochlorite as a main component, and the wafer can be polished by the same action.
【０００３】ウエハの材料により研磨液も異なる。Ｉｎ
Ｐの場合はＢｒ−ＣＨ3 ＯＨ水溶液あるいはこれを主成
分とする研磨液が用いられる。図１は研磨装置の概略図
である。回転定盤１は大きい円形の板であり、回転軸と
共に回転する。回転定盤１の上面には研磨布２が貼って
ある。これはポリウレタンなどである。加圧ヘッド３は
円形の板と回転軸とよりなる。回転軸は上方で軸受けに
より回転可能に支持される。またモ−タにより回転でき
る。さらに適当な荷重をかけることができるようになっ
ている。加圧ヘッド３の下には、研磨プレ−ト４が取り
付けられる。研磨プレ−ト４には円周上に複数の化合物
半導体ウエハ５が貼り付けられる。回転定盤１の中央部
上方から研磨液６が、研磨液配管７により供給される。
研磨中は、加圧ヘッドにより適当な圧力を加えてウエハ
を押さえる。加圧ヘッド３は自転し、回転定盤１は公転
する。研磨液は化学的にウエハを削る作用と、研磨布と
の接触を和らげる緩衝作用がある。研磨終了後は、加圧
ヘッド３が持ち上げられて、アンロ−ドステ−ション８
に置かれる。The polishing liquid also differs depending on the material of the wafer. In
In the case of P, a Br—CH 3 OH aqueous solution or a polishing liquid containing this as a main component is used. FIG. 1 is a schematic view of a polishing apparatus. The rotary platen 1 is a large circular plate that rotates together with the rotary shaft. A polishing cloth 2 is attached to the upper surface of the rotary platen 1. This is polyurethane and the like. The pressure head 3 comprises a circular plate and a rotary shaft. The rotating shaft is rotatably supported above by a bearing. It can also be rotated by a motor. Further, an appropriate load can be applied. A polishing plate 4 is attached below the pressure head 3. A plurality of compound semiconductor wafers 5 are attached on the circumference of the polishing plate 4. The polishing liquid 6 is supplied from above the central portion of the rotary platen 1 through a polishing liquid pipe 7.
During polishing, an appropriate pressure is applied by the pressure head to press the wafer. The pressure head 3 rotates and the rotary platen 1 revolves around the sun. The polishing liquid has a function of chemically scraping the wafer and a buffering effect of softening the contact with the polishing cloth. After the polishing, the pressure head 3 is lifted and the unload station 8
Placed in.
【０００４】本発明は、研磨の終了近くでの液体の供給
に関するので、これに関連する従来技術について説明す
る。 特開平２−２０７５２７号「ＧａＡｓウエハの研磨方
法」 これは、ＧａＡｓウエハを次亜塩素酸系の研磨液により
研磨する際に、終了近くに定盤に過酸化水素水（Ｈ2 Ｏ
2 ）を与える。これはウエハの表面から研磨液を除くた
めである。次亜塩素酸系研磨液がウエハの上に残留する
と、ウエハをエッチングし酸化するので、微小な凹凸が
発生する。このためにウエハ表面に曇りが生じる。そこ
で次亜塩素酸系研磨液を除くために過酸化水素水を定盤
に流している。図３はこの従来技術の様子を示す。Since the present invention relates to the supply of liquid near the end of polishing, the related art will be described. JP-A-2-207527 "polishing method of the GaAs wafer" This a GaAs wafer when polishing the polishing liquid hypochlorite, hydrogen peroxide to the base towards the end (H 2 O
2 ) give. This is to remove the polishing liquid from the surface of the wafer. When the hypochlorous acid-based polishing liquid remains on the wafer, the wafer is etched and oxidized, so that minute irregularities occur. As a result, the surface of the wafer becomes cloudy. Therefore, in order to remove the hypochlorous acid-based polishing liquid, hydrogen peroxide solution is poured on the surface plate. FIG. 3 shows the state of this prior art.
【０００５】特開平３−２４８５３２号「半導体ウエ
ハの加工方法」 これは、ＳｉＯ2 砥粒と化学作用を有する材料とよりな
る研磨剤を使って、Ｓｉ、ＧａＡｓ、ＩｎＰなどのウエ
ハを研磨する。砥粒が物理的に作用するので、ウエハが
傷つく。研磨液の量を増やすと傷が付きにくいが、しか
し研磨液が常時多いとすれば不経済である。そこで、研
磨の終わりに近い時に、研磨液の量を増加させる。付加
的な配管を用いて研磨液を一気に噴出するようにする。
図４はこれを示す。 特開平１−３０２７２７号「化合物半導体鏡面基板の
製造方法」 これは、研磨加工に於ける最終のリンス工程時に、チオ
硫酸ナトリウム（Ｎａ2 Ｓ2 Ｏ3 ）を含有するリンス液
にて研磨加工を行うことにより、基板表面に高品質の清
浄度を持たせるものである。Japanese Unexamined Patent Publication (Kokai) No. 3-248532, "Processing Method for Semiconductor Wafer" This is a method for polishing a wafer of Si, GaAs, InP or the like using an abrasive composed of SiO 2 abrasive grains and a material having a chemical action. Since the abrasive grains physically act, the wafer is damaged. Although scratches are less likely to occur when the amount of polishing liquid is increased, it is uneconomical if the amount of polishing liquid is constantly large. Therefore, the amount of polishing liquid is increased near the end of polishing. An additional pipe is used so that the polishing liquid is ejected at once.
FIG. 4 illustrates this. "Manufacturing method of a compound semiconductor mirror substrate" This JP 1-302727, when the rinsing step in the final in polishing, the polishing by rinse solution containing sodium thiosulfate (Na 2 S 2 O 3) By doing so, the surface of the substrate is provided with high quality cleanliness.
【０００６】[0006]
【発明が解決しようとする課題】従来は、研磨終了後、
人手または搬送機構により研磨プレ−トを水洗工程に移
動させ、ここで水洗いし研磨液を除去していた。研磨の
終了と研磨液の除去の間に時間的な遅れがあった。この
間に研磨液による化学的な腐食が進行する。不規則に付
着している研磨液のために、局所的に基板が腐食される
のでエッチピットができる。さらに薬剤が析出し、基板
の表面に異物が付着する。或いは研磨液による酸化が進
行する。このような原因で、ウエハの表面の品質が劣化
する。研磨終了後、出来るだけ早く研磨液を除去し、ウ
エハの腐食や薬剤の析出、酸化などを防ぐようにするこ
とが本発明の目的である。前記の従来技術は過酸化水
素を定盤に与えて、研磨液の化学的作用を中和させるも
のである。これは直接にウエハを洗浄する作用がない。
定盤との接触により研磨液を洗い流そうとするものであ
る。は最終段階に研磨液を大量に流すものであり、研
磨液を除去する作用はない。はチオ硫酸ナトリウムに
より研磨液を中和するものであるが、これも定盤に流す
ので作用が間接的である。Conventionally, after finishing polishing,
The polishing plate was moved to a water washing step manually or by a transport mechanism, and was washed there with water to remove the polishing liquid. There was a time delay between the end of polishing and the removal of the polishing liquid. During this time, chemical corrosion by the polishing liquid proceeds. Etching pits are formed because the substrate is locally corroded due to the irregularly adhered polishing liquid. Further, the drug is deposited and foreign matter is attached to the surface of the substrate. Alternatively, oxidation by the polishing liquid proceeds. Due to these causes, the quality of the surface of the wafer deteriorates. It is an object of the present invention to remove the polishing liquid as soon as possible after the completion of polishing so as to prevent the wafer from being corroded, the chemicals being deposited, and being oxidized. In the above-mentioned conventional technique, hydrogen peroxide is applied to the platen to neutralize the chemical action of the polishing liquid. It has no direct wafer cleaning action.
It is intended to wash away the polishing liquid by contact with the surface plate. Is a method of flowing a large amount of polishing liquid in the final stage, and has no function of removing the polishing liquid. Is to neutralize the polishing liquid with sodium thiosulfate, but this action is also indirect because it also flows on the surface plate.
【０００７】[0007]
【課題を解決するための手段】本発明の化合物半導体基
板の研磨方法は、化合物半導体基板を研磨液を用いて研
磨した後、基板を持ち上げて、基板の表面に直接に純水
または研磨停止剤、あるいは研磨停止剤を含んだ水を噴
射して、基板の表面に付着した研磨液を除去するように
したものである。A method for polishing a compound semiconductor substrate according to the present invention comprises: polishing a compound semiconductor substrate with a polishing liquid; then lifting the substrate; and deionized water or a polishing stopper directly on the surface of the substrate. Alternatively, water containing a polishing stopper is sprayed to remove the polishing liquid adhering to the surface of the substrate.
【０００８】[0008]
【作用】研磨液は化学的な作用によりウエハ表面を除去
してゆくものであるから、これが残留するとウエハを腐
食する。腐食は研磨終了後直ちに開始する。本発明は、
研磨液を使って化合物半導体ウエハの研磨をした後、直
ちにウエハを持ち上げて、ウエハ面へ直接に純水等を吹
き付けて研磨液を洗い流す。つまり研磨が終わると、加
工ヘッドを持ち上げウエハ面を研磨布から離し、ウエハ
の露呈した面に直接に純水などを吹き付ける。洗浄はで
きるだけ早くするのが良い。研磨終了から、洗浄開始ま
での時間は１０秒以内であることが望ましい。３秒以内
であると更に効果がある。本発明は研磨が終わると直ぐ
に純水を吹き付けてウエハ面を洗浄する。これは回転定
盤の近くに上向きの洗浄液配管（シャワ−ノズル等）を
設け、ここから純水等を吹き付けることによってなされ
る。研磨液を洗い流すので、ウエハが研磨後に腐食され
るということがない。局所的腐食によってピットが発生
しない。高品質の表面を持つウエハを得ることができ
る。The polishing liquid removes the surface of the wafer by a chemical action, and if it remains, it corrodes the wafer. Corrosion begins immediately after polishing. The present invention is
After polishing the compound semiconductor wafer with the polishing liquid, the wafer is immediately lifted and pure water or the like is directly sprayed on the wafer surface to wash away the polishing liquid. That is, when polishing is completed, the processing head is lifted to separate the wafer surface from the polishing cloth, and pure water or the like is directly sprayed on the exposed surface of the wafer. Cleaning should be done as soon as possible. The time from the end of polishing to the start of cleaning is preferably within 10 seconds. It is more effective if it is within 3 seconds. In the present invention, pure water is sprayed immediately after polishing to clean the wafer surface. This is done by providing an upward cleaning liquid pipe (shower nozzle or the like) near the rotary platen and spraying pure water or the like from there. Since the polishing liquid is washed away, the wafer is not corroded after polishing. No pits due to local corrosion. A wafer having a high quality surface can be obtained.
【０００９】研磨加工の手順を初めから述べると次のよ
うになる。研磨は、既に述べたように次のようにして行
なう。研磨布を貼り付けた回転定盤を回転させ研磨液を
供給する。研磨プレ−トにウエハを貼り付け、これを加
工ヘッドに取り付けて、加工ヘッドを研磨布に押しつけ
る。加工ヘッドは自転させ、回転定盤は公転させる。ウ
エハの表面が研磨布に接触する。研磨布との摩擦と研磨
液の化学的作用によりウエハが研磨される。この作業が
終わると、加工ヘッドが持ち上がるので、ウエハの表面
が露出する。ウエハにめがけて、シャワ−ノズルから純
水等を噴射する。直接に水が吹き付けられるので、ウエ
ハから瞬時に研磨液が除かれる。研磨液が完全に除去さ
れるので、以後残留研磨液によりエッチピットができた
りしない。良好な表面のウエハを得る。純水を噴射する
際、加工ヘッドを回転した方が良い。その方が研磨液を
完全に除き易いからである。純水の他に、研磨停止剤、
研磨停止剤を含む水を吹き付けることにしても良い。残
留してもウエハに悪影響を及ぼさない液体であることが
必要である。The polishing procedure from the beginning is as follows. Polishing is performed as follows, as already described. The rotary plate on which the polishing cloth is attached is rotated to supply the polishing liquid. The wafer is attached to the polishing plate, the wafer is attached to the processing head, and the processing head is pressed against the polishing cloth. The processing head is rotated and the rotary platen is revolved. The surface of the wafer contacts the polishing cloth. The wafer is polished by the friction with the polishing cloth and the chemical action of the polishing liquid. When this work is completed, the processing head is lifted, and the surface of the wafer is exposed. Pure water or the like is sprayed from the shower nozzle onto the wafer. Since the water is directly sprayed, the polishing liquid is instantaneously removed from the wafer. Since the polishing liquid is completely removed, no etching pits are formed by the residual polishing liquid thereafter. A good surface wafer is obtained. When jetting pure water, it is better to rotate the processing head. This is because it is easier to remove the polishing liquid completely. In addition to pure water, polishing stopper,
Water containing a polishing stopper may be sprayed. It must be a liquid that does not adversely affect the wafer even if it remains.
【００１０】[0010]
【実施例】図１、図２によって本発明の実施例を説明す
る。本発明を実施する研磨装置は、研磨布（ポリッシ
ャ）２を貼りつけた回転定盤１、研磨プレ−ト４を着脱
できる加圧ヘッド３、研磨プレ−ト４を置くためのアン
ロ−ドステ−ション８、洗浄液配管９等を含む。回転定
盤１は主軸１７の周りを大きく公転する。加圧ヘッド３
は軸２０の周りを自転する。研磨布２は例えば、ポリウ
レタン系人工皮革ポリッシャ等である。半導体基板（ウ
エハ）５は、研磨プレ−ト４の面に貼り付けられてい
る。加圧ヘッド３は、回転定盤１とアンロ−ドステ−シ
ョン８の間を移動できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. The polishing apparatus for carrying out the present invention comprises a rotary platen 1 to which a polishing cloth (polisher) 2 is attached, a pressure head 3 to which a polishing plate 4 can be attached and detached, and an unloading stage for placing the polishing plate 4. Section 8, cleaning liquid pipe 9 and the like. The rotary platen 1 revolves around the main shaft 17 largely. Pressure head 3
Rotates about axis 20. The polishing cloth 2 is, for example, a polyurethane artificial leather polisher or the like. The semiconductor substrate (wafer) 5 is attached to the surface of the polishing plate 4. The pressure head 3 can move between the rotary platen 1 and the unload station 8.
【００１１】研磨時には、研磨液配管７から研磨液６
が、研磨布２の上に常時供給される。加圧ヘッド３は、
研磨プレ−ト４を保持し、回転定盤１の研磨布２にウエ
ハを押しつける。回転定盤１の公転と、加圧ヘッド３の
自転により、ウエハ５が化学的、物理的に研磨される。
これが図１に示す状態である。研磨が終了すると、研磨
プレ−ト４は、加圧ヘッド３に保持されたまま速やかに
上昇する。この時の加圧ヘッド３の上昇機構には例えば
エアシリンダ−を用いる。エアシリンダ−によって持ち
上げて一定位置に停止する。上昇下降の機構にはエアシ
リンダ−の他に、電動モ−タ、ギヤ、ボ−ルねじなどを
組み合わせた機構を用いることもできる。At the time of polishing, the polishing liquid 6 is supplied from the polishing liquid pipe 7.
Are constantly supplied onto the polishing cloth 2. The pressure head 3 is
The polishing plate 4 is held, and the wafer is pressed against the polishing cloth 2 on the rotary platen 1. The wafer 5 is chemically and physically polished by the revolution of the rotary platen 1 and the rotation of the pressure head 3.
This is the state shown in FIG. When the polishing is completed, the polishing plate 4 is quickly raised while being held by the pressure head 3. An air cylinder, for example, is used for the lifting mechanism of the pressure head 3 at this time. It is lifted by an air cylinder and stopped at a fixed position. In addition to the air cylinder, a mechanism combining an electric motor, a gear, a ball screw and the like can be used as the ascending / descending mechanism.
【００１２】加圧ヘッド３の上の停止位置には加圧ヘッ
ド検出用のセンサを設けておく。センサが加圧ヘッド３
を検出すると、洗浄液配管９から洗浄液１０がウエハ５
の下面に向かって噴射される。この時加圧ヘッド３は回
転させておく。研磨プレ−ト４に貼り付けた複数枚のウ
エハを均一に洗浄するためである。研磨の終了から、洗
浄の開始までは３秒以内であることが望ましい。洗浄液
は、純水、研磨停止剤、研磨停止剤入りの水などであ
る。一定時間洗浄した後に、加圧ヘッド３をアンロ−ド
ステ−ション８に置く。アンロ−ドステ−ション８では
下方から純水などをウエハに噴き付けて、洗浄を十分に
行なう。その後、次工程の水洗、乾燥に移す。これらの
動作は、全てシ−ケンサ又はマイクロコンピュ−タとセ
ンサを用いて制御する。そのため各動作の時間、速度な
どを最適になるように設定することができる。A sensor for detecting the pressure head is provided at a stop position on the pressure head 3. Sensor is pressure head 3
Is detected, the cleaning liquid 10 is transferred from the cleaning liquid pipe 9 to the wafer 5
Is ejected toward the lower surface of the. At this time, the pressure head 3 is rotated. This is for uniformly cleaning the plurality of wafers attached to the polishing plate 4. It is desirable that the time from the end of polishing to the start of cleaning is within 3 seconds. The cleaning liquid is pure water, a polishing stopper, water containing a polishing stopper, or the like. After washing for a certain period of time, the pressure head 3 is placed on the unload station 8. In the unload station 8, pure water or the like is sprayed onto the wafer from below to sufficiently perform cleaning. Then, the next step is washing with water and drying. All these operations are controlled by using a sequencer or a microcomputer and a sensor. Therefore, the time and speed of each operation can be set to be optimum.
【００１３】[0013]
【発明の効果】本発明の効果を確かめるために、半導体
ウエハを研磨終了後３秒以内に純水をウエハに直接噴き
付けてウエハを洗浄したものと、従来の方法（アンロ−
ドステ−ションに於いてから純水を噴き付ける）で洗浄
したものについて、ウエハ表面の欠陥数を計測した。こ
こで欠陥数というのは、表面欠陥数と付着異物数の和で
ある。これはパ−ティクルカウントというが、この例で
は、散乱断面積が０．０６μｍ2 以上の輝点の数を数え
ている。測定は４インチウエハ４０枚について行なっ
た。表１はその測定結果を示す。In order to confirm the effect of the present invention, the semiconductor wafer is cleaned by spraying pure water directly onto the wafer within 3 seconds after polishing the wafer, and the conventional method (unrolling method).
The number of defects on the wafer surface was measured for those cleaned by spraying pure water from the station). Here, the number of defects is the sum of the number of surface defects and the number of adhered foreign matters. This is called a particle count, but in this example, the number of bright spots having a scattering cross section of 0.06 μm 2 or more is counted. The measurement was performed on 40 4-inch wafers. Table 1 shows the measurement results.
【００１４】[0014]
【表１】 [Table 1]
【００１５】この結果から本発明のようにウエハを研磨
直後に洗浄液を噴射する場合としない場合とに比較して
パ−ティクルカウントを約３個低減することができる。
低減量が僅かなようであるが、４０枚の平均値であるか
ら有意の差がある。本発明が効果を奏することが分か
る。さらに同じウエハについて表面酸化膜の厚みをエリ
プリメ−タ−により測定した。結果を表２に示す。From this result, it is possible to reduce the particle count by about 3 as compared with the case of injecting the cleaning liquid immediately after polishing the wafer as in the present invention and the case of not injecting the cleaning liquid.
Although the reduction amount seems to be slight, there is a significant difference because it is the average value of 40 sheets. It can be seen that the present invention is effective. Further, the thickness of the surface oxide film of the same wafer was measured by an ellipsometer. The results are shown in Table 2.
【００１６】[0016]
【表２】 [Table 2]
【００１７】本発明の方法により、研磨後直ちに純水を
噴射した場合、表面酸化膜が約３Å薄いことが分かる。
この結果から本発明は、ウエハの表面酸化の進行を抑え
る効果もあることがはっきりする。このように本発明
は、ウエハの表面欠陥の発生を抑制し、酸化の進行を遅
らせ、異物の付着を防ぐ上で効果がある。According to the method of the present invention, when pure water is sprayed immediately after polishing, the surface oxide film is about 3Å thin.
From this result, it becomes clear that the present invention also has an effect of suppressing the progress of the surface oxidation of the wafer. As described above, the present invention is effective in suppressing the occurrence of surface defects on the wafer, delaying the progress of oxidation, and preventing foreign matter from adhering.
【図１】半導体ウエハの研磨装置によって半導体ウエハ
を研磨している状態を示す概略断面図。FIG. 1 is a schematic cross-sectional view showing a state in which a semiconductor wafer is polished by a semiconductor wafer polishing apparatus.
【図２】研磨の終了後、本発明の手法に従い、ヘッドを
持ち上げてウエハに洗浄液を噴射している状態を示す概
略断面図。FIG. 2 is a schematic cross-sectional view showing a state in which the head is lifted and the cleaning liquid is sprayed on the wafer according to the method of the present invention after the polishing is completed.
【図３】特開平２−２０７５２７号の研磨装置を示す概
略断面図。FIG. 3 is a schematic cross-sectional view showing a polishing apparatus disclosed in JP-A-2-207527.
【図４】特開平３−２４８５３２号の研磨装置を示す概
略断面図。FIG. 4 is a schematic cross-sectional view showing a polishing apparatus disclosed in JP-A-3-248532.
１ 回転定盤 ２ 研磨布（ポリッシャ） ３ 加圧ヘッド ４ 研磨プレ−ト ５ 半導体基板（ウエハ） ６ 研磨液 ７ 研磨液配管 ８ アンロ−ドステ−ション ９ 洗浄液配管 １０ 洗浄液 １２ Ｈ2 Ｏ2 配管DESCRIPTION OF SYMBOLS 1 rotating surface plate 2 polishing cloth (polisher) 3 pressure head 4 polishing plate 5 semiconductor substrate (wafer) 6 polishing liquid 7 polishing liquid pipe 8 unloading station 9 cleaning liquid pipe 10 cleaning liquid 12 H 2 O 2 pipe
Claims (2)
磨した後、ウエハを持ち上げて、ウエハの表面に直接
に、純水または研磨停止剤、あるいは研磨停止剤を含ん
だ水を噴射してウエハの表面に付着した研磨液を除去す
るようにしたことを特徴とする化合物半導体基板の研磨
方法。1. A wafer after polishing a compound semiconductor wafer with a polishing liquid, lifting the wafer, and directly injecting pure water, a polishing stopper, or water containing a polishing stopper to the surface of the wafer. A method for polishing a compound semiconductor substrate, characterized in that the polishing liquid adhering to the surface of the substrate is removed.
と、半導体基板を貼り付けた研磨プレ−トとを着脱自在
に保持することができ、加圧ヘッドを保持して一定位置
に持ち上げることのできる加圧ヘッド昇降装置と、持ち
上げられた半導体基板の下面に洗浄液を噴射する洗浄液
配管と、回転定盤の上に研磨液を供給する研磨液配管と
を含み、研磨後に半導体基板と加圧ヘッドとを上昇さ
せ、洗浄液配管から洗浄液を半導体基板に噴射すること
を特徴とする化合物半導体基板の研磨装置。2. A rotating rotary platen to which a polishing cloth is attached and a polishing plate to which a semiconductor substrate is attached can be detachably held, and a pressure head is held and lifted to a predetermined position. It includes a pressurizing head lifting device capable of controlling, a cleaning liquid pipe for injecting a cleaning liquid onto the lower surface of the lifted semiconductor substrate, and a polishing liquid pipe for supplying a polishing liquid on a rotating surface plate. A polishing apparatus for a compound semiconductor substrate, characterized in that a pressure head and a cleaning liquid are sprayed onto the semiconductor substrate from a cleaning liquid pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139994A JPH07201786A (en) | 1994-01-05 | 1994-01-05 | Method and apparatus for grinding compound semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139994A JPH07201786A (en) | 1994-01-05 | 1994-01-05 | Method and apparatus for grinding compound semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07201786A true JPH07201786A (en) | 1995-08-04 |
Family
ID=11776942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1139994A Pending JPH07201786A (en) | 1994-01-05 | 1994-01-05 | Method and apparatus for grinding compound semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07201786A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999033612A1 (en) * | 1997-12-26 | 1999-07-08 | Ebara Corporation | Polishing device |
| WO2001030538A1 (en) * | 1999-10-27 | 2001-05-03 | Shin-Etsu Handotai Co., Ltd. | Work polishing method and work polishing device |
| JP2002222785A (en) * | 2001-01-24 | 2002-08-09 | Dowa Mining Co Ltd | Semiconductor wafer and its polishing method |
| WO2004053966A1 (en) * | 2002-12-10 | 2004-06-24 | Ebara Corporation | Polishing method |
| WO2004068569A1 (en) * | 2003-01-28 | 2004-08-12 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing semiconductor wafer |
| KR100451615B1 (en) * | 1996-02-28 | 2005-01-13 | 가부시키 가이샤 에바라 세이사꾸쇼 | Polishing apparatus |
| US7258599B2 (en) | 2005-09-15 | 2007-08-21 | Fujitsu Limited | Polishing machine, workpiece supporting table pad, polishing method and manufacturing method of semiconductor device |
| JP2008091698A (en) * | 2006-10-03 | 2008-04-17 | Matsushita Electric Ind Co Ltd | Substrate treating device, and substrate treating method |
| JP2008200787A (en) * | 2007-02-19 | 2008-09-04 | Toppan Printing Co Ltd | Surface polishing machine |
| JP5023146B2 (en) * | 2007-04-20 | 2012-09-12 | 株式会社荏原製作所 | Polishing apparatus and program thereof |
| JP2015026794A (en) * | 2013-07-29 | 2015-02-05 | 信越半導体株式会社 | Wafer polishing method and wafer polishing device |
-
1994
- 1994-01-05 JP JP1139994A patent/JPH07201786A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100451615B1 (en) * | 1996-02-28 | 2005-01-13 | 가부시키 가이샤 에바라 세이사꾸쇼 | Polishing apparatus |
| US6338669B1 (en) | 1997-12-26 | 2002-01-15 | Ebara Corporation | Polishing device |
| WO1999033612A1 (en) * | 1997-12-26 | 1999-07-08 | Ebara Corporation | Polishing device |
| KR100690098B1 (en) * | 1999-10-27 | 2007-03-08 | 신에쯔 한도타이 가부시키가이샤 | Semiconductor wafer polishing method and semiconductor wafer polishing device |
| WO2001030538A1 (en) * | 1999-10-27 | 2001-05-03 | Shin-Etsu Handotai Co., Ltd. | Work polishing method and work polishing device |
| US6558227B1 (en) | 1999-10-27 | 2003-05-06 | Shin-Etsu Handotai Co., Ltd. | Method for polishing a work and an apparatus for polishing a work |
| JP2002222785A (en) * | 2001-01-24 | 2002-08-09 | Dowa Mining Co Ltd | Semiconductor wafer and its polishing method |
| WO2004053966A1 (en) * | 2002-12-10 | 2004-06-24 | Ebara Corporation | Polishing method |
| WO2004068569A1 (en) * | 2003-01-28 | 2004-08-12 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing semiconductor wafer |
| US7258599B2 (en) | 2005-09-15 | 2007-08-21 | Fujitsu Limited | Polishing machine, workpiece supporting table pad, polishing method and manufacturing method of semiconductor device |
| US7572172B2 (en) | 2005-09-15 | 2009-08-11 | Fujitsu Microelectronics Limited | Polishing machine, workpiece supporting table pad, polishing method and manufacturing method of semiconductor device |
| JP2008091698A (en) * | 2006-10-03 | 2008-04-17 | Matsushita Electric Ind Co Ltd | Substrate treating device, and substrate treating method |
| JP2008200787A (en) * | 2007-02-19 | 2008-09-04 | Toppan Printing Co Ltd | Surface polishing machine |
| JP5023146B2 (en) * | 2007-04-20 | 2012-09-12 | 株式会社荏原製作所 | Polishing apparatus and program thereof |
| JP2015026794A (en) * | 2013-07-29 | 2015-02-05 | 信越半導体株式会社 | Wafer polishing method and wafer polishing device |
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