JPH11333699A - Polishing pad, polishing device and polishing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a polishing pad for polishing a chemical machine to improve polishing quality, such as uniformity of a polishing amount and flatness, throughout the whole surface of a wafer and to provide a polishing device and a polishing method. SOLUTION: In a polishing pad used in a chemical machine polishing method to polish a base sheet 4 to be polished, a groove 30 is formed in the polishing pad, and the shoulder part 33 of the groove 30 on the front side in an advancing direction 38 of at least a substrate 4 to be polished is formed in a forward taper shape spreading toward above. Or, in at least a region in the vicinity of the surface of the polishing pad, a region wherein hardness, elasticity, and holding characteristics of polishing slurry are different is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing (CMP) in a semiconductor device manufacturing process.
The present invention relates to a polishing pad used for performing a planarization process of an interlayer insulating film by an ical polishing method, a polishing apparatus using the polishing pad, and a polishing method.

[0002]

2. Description of the Related Art In recent years, the miniaturization and high integration of semiconductor integrated circuits have progressed to the next generation in three years, and the design rules have been reduced by 70% of the previous generation. Has also been realized. In order to process a semiconductor device finely, for example, the gate width of a gate electrode of a transistor or the DR
It is necessary to reduce the area occupied by capacitors in AM, etc., and also to make the wiring part a multi-layer wiring structure. Is becoming important. As devices such as transistors and capacitors have a complicated structure and become three-dimensional, an interlayer insulating film has become thicker.

[0003] The above miniaturization has advanced the fine processing technology in the manufacturing process of semiconductor devices, and in particular, the technology of transferring a circuit pattern to a photosensitive organic film (photoresist) coated on a wafer surface using light. Has been achieved by increasing the resolution in the lithography process. Specifically, the light source used in the lithography process has a shorter wavelength. For example, a g-line (436 nm) or i-line is used for pattern transfer of a semiconductor integrated circuit of the 1.0 to 0.5 μm rule.
Line (365 nm) is used, and i-line is mainly used for pattern transfer according to the 0.35 μm rule. In addition, for manufacturing a semiconductor integrated circuit having a rule of 0.25 μm or later, a technique of exposing using a KrF excimer laser (248.8 nm) or an ArF excimer laser (193 nm) has been developed.

[0004] As described above, the improvement of the resolution in the lithography step causes a decrease in the depth of focus (DOF) of the exposure in the lithography step. This improvement has to wait for the improvement of the resist performance, but the improvement of the resist performance is preceded by the demand for miniaturization. Therefore, a method of compensating for the lack of the depth of focus by minimizing the height difference of the device structure when performing the lithography process and reliably resolving a fine pattern without causing defocus has been studied.

Therefore, as a method of flattening the height difference of the device structure, recently, a chemical mechanical polishing method applying mirror finishing of a silicon wafer has been adopted. FIG.
FIG. 1 is a schematic view showing a conventional chemical mechanical polishing apparatus for performing this chemical mechanical polishing. This apparatus is used to sharpen the surface of a polishing pad 2 in which a polishing plate 3 supported on a rotating polishing plate rotating shaft 1 and having a polishing pad 2 adhered to a surface thereof, and a die 102 and the like formed by electrodeposition on a metal plate. A dresser 101, a carrier 5 holding a substrate 4 (hereinafter, referred to as a wafer) on which a layer to be polished such as an interlayer insulating film is formed by a wafer backing film 14, and a polishing slurry 10 are supplied onto the polishing pad 2. And a polishing slurry supply device 7 having a polishing slurry supply nozzle 6.

Then, the polishing pad 2 is put on the dresser 101.
After the dressing (grinding), the polishing plate rotating shaft 1 and the carrier rotating shaft 8 are rotated, and the polishing slurry 1 is supplied from the polishing slurry supply nozzle 6 to the center of the polishing pad 2.
The wafer 4 is polished by pressing the wafer 4 onto the polishing pad 2 by the polishing pressure adjusting mechanism 9 while supplying 0.

In the chemical mechanical polishing method as described above, micro-scratch occurs in a layer to be polished such as an insulating film of a wafer, and a variation in a polishing rate and a variation in a polishing amount in a wafer surface are large. That is the problem.

In order to suppress the occurrence of micro-scratch, shavings of the polishing pad 2 generated during dressing of the polishing pad 2, a diamond of a dresser, an interlayer film, debris of a wafer, a polished polishing slurry, etc. It is necessary to discharge these to the outside of the polishing pad 2.

Therefore, in the conventional chemical mechanical polishing apparatus described above, the polishing slurry is applied to the polishing pad 2 during the polishing operation.
A sufficient measure is taken such that the polishing slurry sufficiently removes or flushes out the polishing pad 2 with the polishing slurry.

In order to reduce the variation in the polishing rate and the variation in the polishing amount within the wafer surface, it is necessary to take the following measures. As a principle of the chemical mechanical polishing, a dresser makes countless scratches on the surface of the polishing pad 2 to form a so-called shallow dressing layer on the surface of the polishing pad 2, and the polishing slurry 10 enters the wafer while being held therein. By polishing the polishing pad 4, a sufficient polishing slurry can be supplied to the polishing surface of the wafer 4 pressed against the polishing pad 2,
Thus, polishing can be performed. In consideration of this, dressing of the polishing pad surface by a dresser, so-called dressing, is sufficiently performed so that the depth and density of the dressing layer are sufficient, and furthermore, sufficient polishing slurry 10 which is also a measure for preventing micro-scratch is provided. The polishing slurry 10 is supplied to ensure that the polishing slurry 10 reaches the surface of the wafer 4. As described above, a measure is taken to reduce the variation in the polishing rate and the polishing amount within the wafer surface.

However, when the dressing layer is formed on the pad surface by the dressing and the polishing slurry is supplied and the wafer is polished, the polishing slurry has a centrifugal force due to the rotation of the polishing pad and presses the wafer against the polishing pad. , And most of them are discharged to the outside of the polishing pad without directly contributing to polishing, so that expensive polishing slurry is wasted. For this reason, conventionally, in order to increase the chance of contact with a wafer by accumulating a polishing slurry, a polishing pad
For example, a polishing pad having a lattice-shaped groove 21 as shown in FIG. 1 and a polishing pad having a concentric groove 22 formed with respect to the center of a polishing pad substrate 20 as shown in FIG. We also offer.

[0012]

However, the demand for the quality of chemical mechanical polishing is increasing more and more, and the above-mentioned conventional polishing method has the following problems. The quality is not sufficient in terms of flatness on the entire surface and the like, and improvement thereof has been desired.

For example, in the method of manufacturing a semiconductor device including the conventional chemical mechanical polishing method described above, for example, an area of about 5 mm around the wafer edge is cut as a defective area while a wafer edge is cut. In recent years, in order to improve the profitability, it is desired that the defective area is narrowed in each of the pre-process manufacturing apparatuses, for example, 3 mm or less. Therefore, it is necessary to narrow the defective area in the chemical mechanical polishing step. Has become. However, according to the conventional chemical mechanical polishing method described above, micro-scratch occurs in the insulating film of the wafer, and a variation in a polishing rate and a variation in a polishing amount in a wafer surface are large in a wafer edge region. In addition, it is difficult to narrow the defective area in the peripheral portion of the wafer.

The reason why it is difficult to narrow the defective region in the wafer edge region in the above-described conventional chemical mechanical polishing method will be described with reference to the drawings. FIG. 23A is a cross-sectional view of a groove portion of a polishing pad in which, for example, a lattice-shaped groove as shown in FIG. 21 is formed. A groove 30 is formed in the polishing pad base 20. Here, the groove 30 has a rectangular shape formed by a bottom surface and opposing side wall surfaces.

The groove 30 having the above-described shape is formed in the polishing pad substrate 20.
When the wafer 4 is polished using the polishing pad formed in the above, as shown in FIG. 23B, when the wafer 4 passes through the upper part of the groove 30 in the direction 38, the wafer 4 is pressed. The thickness of the polished pad region 31 is reduced. When the wafer 4 passes over the groove 30 in this state, the front edge 41 in the traveling direction of the wafer 4 is thicker because the wafer 4 is not pressed by the wafer 4 in addition to the pressure on the polishing pad of the wafer 4. The wafer 4 is subjected to an abnormal pressure from the polishing pad on the side wall 32 of the groove 30 of the polishing pad which remains. This increases the polishing rate at the edge 41 of the wafer 4 and increases the polishing amount. In actual chemical mechanical polishing, the wafer 4 is often rotated in order to reduce variations in the polishing rate and the like within the surface of the wafer 4, and therefore, as described above, an abnormal pressure is applied from the polishing pad to the polishing pad. As a result, the region where the polishing rate is increased and the polishing amount is increased is the entire periphery of the wafer. As described above, the variation in the polishing rate and the variation in the polishing amount in the wafer surface are large in the wafer edge region around the entire wafer.

In order to increase the variation in the polishing rate and the variation in the polishing amount in the wafer surface due to the above-mentioned factors in the wafer edge region, a polishing pad of a type having no groove is used. It can be said that in the case of a polishing pad in which the hardness and elasticity of the polishing pad are uniform, the polishing pad in front of the wafer in the direction of travel of the wafer is thicker than the area of the polishing pad against which the wafer is pressed. Is thicker, the edge in the direction in which the wafer travels is shaped to ride on this polishing pad, so that the edge portion of the wafer receives great pressure from the polishing pad, and the polishing rate at the edge portion of the wafer increases, The polishing amount will increase.

In order to improve the flatness over the entire surface of the wafer, it is necessary to increase the hardness of the polishing pad. However, when the hardness of the polishing pad is increased, the polishing pad does not follow the warpage of the wafer during polishing,
Further, it is known that uniformity and reproducibility of polishing are deteriorated due to poor holding characteristics of the polishing slurry. As a method of improving the holding characteristics of the polishing slurry, it is conceivable to use urethane foam as a material constituting the polishing pad and increase the foaming amount. This is to increase the number of cavities in the polishing pad by, for example, converting the isolated foam into a continuous foam, thereby improving the holding characteristics by increasing the number of places for holding the polishing slurry. However, generally, when the foaming amount of the foaming material is increased, the hardness decreases,
The flatness over the entire surface of the wafer will be degraded.

The present invention has been made in view of the above-mentioned problems. Accordingly, the present invention provides a method of manufacturing a semiconductor device, in which chemical mechanical polishing for planarizing an interlayer insulating film or the like is performed on the entire surface of a wafer. Polishing pad for chemical mechanical polishing capable of realizing improvement in polishing quality such as uniformity of polishing amount and flatness, and a polishing apparatus using the same,
An object of the present invention is to provide a polishing method.

[0019]

In order to achieve the above object, a polishing pad according to the present invention is a polishing pad used in a chemical mechanical polishing method for polishing a substrate to be polished, wherein the polishing pad has a groove. The groove is formed in a forward tapered shape in which at least the shoulder of the groove on the front side in the traveling direction of the substrate to be polished spreads upward.

In the polishing pad of the present invention, a groove is formed, and a polishing slurry is accumulated in the groove to increase a chance of contact with a substrate to be polished (hereinafter, also referred to as a wafer) to thereby increase a polishing rate. Variations in the amount of polishing and the amount of polishing within the wafer surface can be reduced. Here, when the wafer passes over the upper part of the groove of the polishing pad, since the shoulder of the groove on the front side in the traveling direction of the wafer is formed in a forward tapered shape that spreads upward, the front edge in the traveling direction of the wafer is formed by the groove. Pressure on the side wall of the wafer is alleviated, thereby increasing the polishing rate at the edge portion of the wafer and suppressing an increase in the polishing amount. Therefore, it is a polishing pad for chemical mechanical polishing that can improve the polishing quality such as the polishing uniformity particularly at the edge portion.

The above polishing pad of the present invention is preferably
The forward tapered shape is constituted by a curved surface, or the forward tapered shape is constituted by a plane inclined with respect to the surface of the polishing pad. With a curved surface or a plane inclined with respect to the surface of the polishing pad,
It is possible to form a forward tapered shape, and it is possible to suppress an increase in the polishing rate at the edge portion of the wafer and an increase in the polishing amount as described above.

The above polishing pad of the present invention is preferably
The shoulder portion of the groove on the rear side in the traveling direction of the substrate to be polished is also formed in a forward tapered shape that widens upward. This alleviates the pressure when the front edge in the traveling direction of the wafer hits the side wall of the groove when the wafer passes over the polishing pad groove regardless of the traveling direction of the wafer, and polishing at the edge of the wafer. An increase in the rate and an increase in the polishing amount can be suppressed.

The above-mentioned polishing pad of the present invention is preferably
The side wall surface of the groove on the front side in the traveling direction of the substrate to be polished is formed in a forward tapered shape from the bottom of the groove, and more preferably, the surface of the groove formed in a forward tapered shape from the bottom of the groove. The side wall surface of the groove on the front side in the traveling direction of the polishing substrate is in contact with the side wall surface of the groove on the rear side in the traveling direction of the substrate to be polished, or more preferably, the rear side in the traveling direction of the substrate to be polished. The shoulder of the groove on the side is also formed in a forward tapered shape that spreads upward. As described above, the shoulder portion of the groove on the front side in the traveling direction of the wafer can have a forward tapered shape that widens upward.

The above polishing pad of the present invention is preferably
Polyurethane material, silicone rubber material, hard rubber material, polyfluoroethylene material, polyamide material,
It is formed from a material selected from a polyvinyl chloride-based material and a mixture thereof. A polishing pad having appropriate hardness and elasticity for polishing can be obtained, so that the polishing efficiency can be increased and the polishing quality can be further improved.

The above polishing pad of the present invention is preferably
On the surface of the polishing pad in which the grooves are formed, a coating layer flattened by a material having hardness or elasticity smaller than that of the material forming the polishing pad or having high polishing slurry holding characteristics is formed. Even in a polishing pad having a flattened surface, if the hardness and elasticity of the polishing pad are uniform, the edge in the direction in which the wafer is pressed against the polishing pad when polishing is performed and the wafer advances is polished. The edge portion receives a large pressure from the polishing pad, and the polishing rate increases, and the polishing amount increases. Polishing is performed by forming a flattened coating layer on the upper layer of the tapered polishing pad with a material having a hardness or elasticity smaller than that of the material constituting the polishing pad or a material having a high holding property of the polishing slurry. During the process, the pressure applied to the edge of the wafer from the polishing pad is reduced, the polishing rate at the edge of the wafer is increased, and the polishing amount is reduced. It is possible to suppress the Kunar.

The above polishing pad of the present invention is preferably
The groove formed in the polishing pad has an area formed at a position connecting at least two points having different distances from the center of the polishing pad, such as a scroll shape, an elliptical shape, or a radial groove. More preferably, the groove formed in the polishing pad further has a region formed at a position where the distance from the center of the polishing pad is equal. By accumulating polishing slurry in a groove having an area formed at a position connecting two points having different distances from the center of the polishing pad, the supply of the polishing slurry to the wafer is eliminated from one place, and the polishing of the wafer is performed. The uniformity of the slurry contact can be improved, and the variation in the polishing rate and the polishing amount in the wafer surface can be reduced. As the grooves formed in the polishing pad,
It may have a region formed at a position where the distance from the center of the polishing pad is equal.

According to another aspect of the present invention, there is provided a polishing pad for use in a chemical mechanical polishing method for polishing a substrate to be polished, wherein at least a region near the surface of the polishing pad is provided. Regions having different hardness, elasticity, or holding characteristics of the polishing slurry are formed.

In a region near the surface of the polishing pad, a region having a different hardness, elasticity, or holding property of the polishing slurry is formed.
Alternatively, the flatness of the entire surface of the wafer can be improved in an area where the polishing slurry holding property is low, while the polishing uniformity and reproducibility can be improved in an area where the hardness or elasticity is low or the polishing slurry holding property is high. Can be improved. Therefore, it is a polishing pad for chemical mechanical polishing capable of improving polishing quality such as polishing uniformity and flatness over the entire surface of the wafer.

The polishing pad of the present invention is preferably
A substrate forming the polishing pad is formed on a first polishing pad substrate and an upper layer of the first polishing pad substrate, and has a hardness, elasticity, or a polishing slurry holding property different from that of the first polishing pad substrate, and has a flat surface. And a second polishing pad substrate that is
As the thickness of the polishing pad substrate changes, regions having different hardness, elasticity, or polishing slurry holding characteristics are formed.
The second polishing pad base is formed of a material having higher hardness or elasticity than the first polishing pad base, or formed of a material having a low polishing slurry holding property, or the second polishing pad base is formed of a first polishing pad. It may be configured to be formed of a material having a lower hardness or elasticity than the base, or a material having a high polishing slurry holding property. Further, the second polishing pad base has a plurality of polishing pad members having different hardness, elasticity or polishing slurry holding characteristics,
The plurality of polishing pad members may be arranged adjacent to each other to form regions having different hardness, elasticity, or polishing slurry holding characteristics. Alternatively, the substrate forming the polishing pad has a plurality of polishing pad members having different hardness, elasticity or holding characteristics of the polishing slurry,
The plurality of polishing pad members may be arranged adjacent to each other to form regions having different hardness, elasticity, or polishing slurry holding characteristics.

The above polishing pad of the present invention is preferably
In the region near the surface of the polishing pad, there is a region which changes in order in the direction of movement of the substrate to be polished such that hardness or elasticity increases or polishing slurry holding characteristics decrease. In this region, the pressure applied to the edge portion of the wafer from the polishing pad during polishing is reduced, the polishing rate at the edge portion of the wafer is increased, and the polishing amount can be suppressed from increasing. Can be improved. Further, a configuration may be further provided in which the hardness or the elasticity is reduced, or a region is changed so as to increase the holding characteristics of the polishing slurry. The polishing pad having the above configuration may be configured so that the hardness, elasticity, or holding characteristics of the polishing slurry change discontinuously or continuously in the traveling direction of the substrate to be polished.

The above polishing pad of the present invention is preferably
The polishing pad is substantially disk-shaped, and in each of the fan-shaped divided regions in the substantially disk-shaped polishing pad, hardness,
It is formed so that the elasticity or the holding characteristics of the polishing slurry are different, and more preferably, in each of the fan-shaped divided regions in the substantially disk-shaped polishing pad, in order in the traveling direction of the substrate to be polished, hardness or hardness. It is formed so as to have high elasticity or low holding characteristics of the polishing slurry. Alternatively, preferably, the polishing pad has a substantially disk shape, and is formed such that hardness, elasticity, or holding characteristics of the polishing slurry are different for each concentrically divided region in the substantially disk-shaped polishing pad. . Alternatively, preferably, the polishing pad is substantially disk-shaped, and in a ring-shaped region on the substantially disk-shaped polishing pad, which is a region through which the substrate to be polished passes, hardness, elasticity, or holding characteristics of the polishing slurry are set. Differently formed, more preferably, in a ring-shaped region on the substantially disk-shaped polishing pad, which is a region through which the substrate to be polished passes, in order in the traveling direction of the substrate to be polished, hardness or It is formed so as to have high elasticity or low holding characteristics of the polishing slurry. Alternatively, preferably, the polishing pad has a substantially belt shape, and in the substantially belt-shaped polishing pad, hardness, elasticity, or holding of a polishing slurry is provided for each region divided by a line perpendicular to the traveling direction of the substrate to be polished. The characteristics are formed so as to be different, and more preferably, in the substantially belt-shaped polishing pad, for each region divided by a line orthogonal to the traveling direction of the polished substrate, in the traveling direction of the polished substrate. In order, the hardness or the elasticity is increased, or the holding characteristics of the polishing slurry are decreased. Alternatively, preferably, the polishing pad has a substantially belt shape, and in the substantially belt-shaped polishing pad, hardness, elasticity, or holding of a polishing slurry is provided for each region divided by a line parallel to the traveling direction of the substrate to be polished. It is formed to have different characteristics. Alternatively or preferably, the polishing pad has a substantially belt shape, and in a central region of the substantially belt-shaped polishing pad, which is a region through which the substrate to be polished passes on the substantially disk-shaped polishing pad,
The hardness, the elasticity or the holding characteristics of the polishing slurry are formed so as to be different, and more preferably, the substantially belt-shaped polishing pad which is a region where the substrate to be polished passes on the substantially disk-shaped polishing pad. In the central area,
The hardness or elasticity is increased or the polishing slurry holding characteristics are decreased in the traveling direction of the substrate to be polished. As described above, a structure in which regions having different hardness, elasticity, or holding characteristics of the polishing slurry are formed in the region near the surface of the polishing pad can be obtained.

The above polishing pad of the present invention is preferably
Polyurethane material, silicone rubber material, hard rubber material, polyfluoroethylene material, polyamide material,
It is formed from a material selected from a polyvinyl chloride-based material and a mixture thereof. A polishing pad having appropriate hardness and elasticity for polishing can be obtained, so that the polishing efficiency can be increased and the polishing quality can be further improved.

The above polishing pad of the present invention is preferably
Grooves or holes are formed in the surface of the polishing pad. Thus, the supply of the polishing slurry can be made uniform, and the polishing quality can be further improved.

The above object can be achieved by the polishing apparatus and the polishing method using the polishing pad of the present invention.

[0035]

Embodiments of the present invention will be described below with reference to the drawings.

First Embodiment FIG. 1 is a schematic view showing a chemical mechanical polishing apparatus according to this embodiment. This apparatus is used to sharpen the surface of a polishing pad 2 in which a polishing plate 3 supported on a rotating polishing plate rotating shaft 1 and having a polishing pad 2 adhered to a surface thereof, and a die 102 and the like formed by electrodeposition on a metal plate. Dresser 101,
Substrate 4 on which a layer to be polished such as an interlayer insulating film is formed
(Hereinafter, referred to as a wafer) by a wafer backing film 14 and a polishing slurry 10
And a polishing slurry supply device 7 having a polishing slurry supply nozzle 6 for supplying the polishing slurry onto the polishing pad 2.

Then, the polishing pad 2 is put on the dresser 101.
After the dressing (grinding), the polishing plate rotating shaft 1 and the carrier rotating shaft 8 are rotated, and the polishing slurry 1 is supplied from the polishing slurry supply nozzle 6 to the center of the polishing pad 2.
The wafer 4 is polished by pressing the wafer 4 onto the polishing pad 2 by the polishing pressure adjusting mechanism 9 while supplying 0.

The above-mentioned polishing pad 2 has a thickness such that deformation during chemical mechanical polishing is sufficiently negligible, and a polishing pad substrate 20 having hardness and elasticity suitable for polishing, for example, As shown in FIG. 2A, a structure in which lattice-shaped grooves 21 are formed can be used. FIG.
(B) is an enlarged sectional view of the groove. A groove 30 is formed in the polishing pad base 20. Here, groove 3
0 is a rectangular shape formed by the bottom surface and the opposing side wall surfaces. In the groove 30, the shoulder 33 of the groove on the front side in the traveling direction 38 of the wafer (substrate to be polished) is formed in a forward tapered shape that spreads upward. The forward tapered shape can be formed by a curved surface or a plane inclined with respect to the surface of the polishing pad. The groove 30 is originally provided to increase the chance of contact with the wafer by accumulating a polishing slurry in the groove, and to reduce variations in the polishing rate and the polishing amount in the wafer surface.

The groove 30 having the above-described shape is formed in the polishing pad substrate 20.
When the wafer 4 is polished by using the polishing pad formed as described above, as shown in FIG. 2C, when the wafer 4 passes through the upper part of the groove 30 in the direction 38, the wafer 4 is pressed. The film thickness 34 of the polishing pad region 31 being pressed is smaller than the film thickness 35 of the region not pressed. When the wafer 4 passes over the groove 30 in this state, the front edge 41 in the traveling direction of the wafer 4
When the front edge 41 in the traveling direction of the wafer hits the side wall of the groove, since the shoulder 33 of the groove on the front side in the traveling direction 38 of the wafer is formed in a forward tapered shape that expands upward. Can be alleviated, thereby increasing the polishing rate at the edge portion of the wafer and suppressing an increase in the polishing amount. Therefore, it is possible to improve the polishing quality such as the uniformity of the polishing amount and the flatness on the entire surface of the wafer, particularly at the edge portion.

The structure of the groove 30 is shown in FIG.
As shown in (a), the shoulder 33 'of the groove on the rear side in the wafer traveling direction may be formed in a forward tapered shape that widens upward. This alleviates the pressure when the front edge in the traveling direction of the wafer hits the side wall of the groove when the wafer passes over the polishing pad groove regardless of the traveling direction of the wafer, and polishing at the edge of the wafer. An increase in the rate and an increase in the polishing amount can be suppressed.

The structure of the groove 30 is shown in FIG.
As shown in (b), the side wall surface of the groove on the front side in the traveling direction of the wafer may be formed to have a forward tapered shape from the bottom of the groove. Further, as shown in FIG. 3C, the side wall surface of the groove on the front side in the traveling direction of the wafer formed in a forward tapered shape from the bottom of the groove is in contact with the side wall surface of the groove on the rear side in the traveling direction of the wafer. It may have a structure. Further, as shown in FIG. 3D, the structure shown in FIG. 3C may have a forward tapered shape in which the shoulder of the groove on the rear side in the traveling direction of the wafer is also formed to be wider upward. Good.

In the present embodiment, the shape of the grooves formed in the polishing pad substrate 20 as the polishing pad 2 is not particularly limited. In addition to the lattice-shaped grooves shown in FIG. At least the distance from the center of the polishing pad, such as an elliptical or radial groove 2
One can have a shape having an area formed at a position connecting the two points. By accumulating polishing slurry in a groove having an area formed at a position connecting two points having different distances from the center of the polishing pad, the supply of the polishing slurry to the wafer is eliminated from one place, and the polishing of the wafer is performed. The uniformity of the slurry contact can be improved, and the variation in the polishing rate and the polishing amount within the wafer surface can be reduced. The groove formed in the polishing pad may have a region formed at a position where the distance from the center of the polishing pad is equal.

For example, like a groove having a shape shown in FIG. 4, a first region A in the direction opposite to the traveling direction 38 of the wafer 4 and a second region on the opposite side thereof around a predetermined radius of the polishing pad. B, and a polishing pad having a groove 23 having a convex portion in the traveling direction 38 of the wafer 4 only on the second region B side is also preferably used. With this, when the polishing slurry is supplied to the center of the polishing pad, the polishing slurry is discharged out of the polishing pad by centrifugal force or the like with the rotation of the polishing pad. The received polishing slurry can be selectively supplied to the front in the traveling direction of the wafer. Therefore, the polishing slurry itself can be positively collected in the groove, held, and the polishing slurry can be selectively supplied to the wafer from the groove, and the polishing shape,
Polishing quality such as polishing rate and polishing uniformity can be improved.

Also, for example, a polishing pad having a scroll (spiral) type groove 27, such as a groove having a shape shown in FIG. 5, is preferably used. This makes it possible to capture the polishing slurry more reliably when discharging the polishing slurry. Further, a groove extending portion 230 serving as a port for discharging the polishing slurry is provided, and the polishing slurry captured from the groove is released again. In the same manner as described above, in the scroll-shaped groove 27, a groove extending portion 230 serving as a polishing slurry discharge port is provided at the intersection of the region 302 through which the wafer passes and the scroll-shaped groove 27. Is re-emitted toward the wafer, and the polishing slurry is supplied to the wafer from a plurality of locations, so that the polishing quality can be further improved and the polishing slurry can be effectively used.

Further, for example, a polishing pad having an elliptical groove 24, such as a groove having a shape shown in FIG. 6, is also preferably used. Since the elliptical groove 24 does not extend in the outer peripheral direction, the discharge of the polishing slurry to the outside of the polishing pad is suppressed, and the amount of the polishing slurry used can be reduced, so that the process cost can be reduced. . In addition, the polishing slurry is accumulated in a groove having a region formed at a position connecting two points having different distances from the center of the polishing pad, which is oval, so that the polishing slurry is supplied to the wafer at one location. It is possible to improve the uniformity of the contact between the wafer and the polishing slurry, and it is possible to reduce the variation in the polishing rate and the polishing amount within the wafer surface.

Any of the polishing pads having the above-described shapes can be incorporated in the polishing apparatus shown in FIG. 1, and the substrate to be processed can be chemically and mechanically polished using this polishing apparatus. Processing can be performed.

Second Embodiment A chemical mechanical polishing apparatus according to this embodiment is substantially the same as that shown in FIG. 1, and only the polishing pad 2 differs as follows.

FIG. 7 shows a polishing pad according to this embodiment.
As shown in the cross-sectional view of (a), a first polishing pad base 36 having unevenness in a stepwise manner in the traveling direction of the wafer, and formed on an upper layer and having a lower hardness or elasticity than the first polishing pad base 36, Alternatively, the polishing pad substrate 20 includes a second polishing pad substrate 37 having a flattened surface and having a high polishing slurry holding characteristic or a combination of these characteristics. In the traveling direction 38 of the wafer 4, the thickness of the second polishing pad base 37 changes discontinuously at the positions Y _AB , Y _BC , and Y _CA , and for each of the regions A, B, and C divided by these positions. The hardness, elasticity or holding characteristics of the polishing slurry are different, and the hardness or elasticity increases in the order of A, B and C, or the holding characteristics of the polishing slurry decrease.
Or have a combination of these properties.

When the polishing pad according to the present embodiment is, for example, substantially disk-shaped, as shown in FIG.
Positions Y _AB , Y _BC , and Y _{CA in the} substantially disk-shaped polishing pad
In each of the regions A, B, and C divided into a fan shape, the thickness of the second polishing pad base may be formed to be discontinuously changed in the traveling direction of the wafer.
The cross-sectional view taken along the line XX ′ in FIG. 7B corresponds to FIG. 7A. As described above, regions having different hardness, elasticity, or holding characteristics of the polishing slurry are formed, thereby improving the flatness over the entire surface of the wafer in regions where the hardness or elasticity is high or the holding characteristics of the polishing slurry are low. On the other hand, uniformity and reproducibility of polishing can be improved in a region where hardness or elasticity is low or polishing slurry holding characteristics are high. Therefore, polishing quality such as polishing uniformity and flatness over the entire surface of the wafer can be improved. In particular, since the hardness or elasticity is increased in the traveling direction of the wafer, or the polishing slurry is formed so as to have low holding characteristics, the pressure applied to the edge portion of the wafer from the polishing pad when polishing is performed. It is possible to suppress the increase in the polishing rate at the edge portion of the wafer and the increase in the polishing amount.

When the polishing pad according to the present embodiment is, for example, substantially disk-shaped, as shown in FIG. 7 (c), in the ring-shaped region through which the wafer passes, divided regions are formed. It is also possible to adopt a configuration in which the hardness, elasticity, or holding characteristics of the polishing slurry are different for each.

Third Embodiment The chemical mechanical polishing apparatus of this embodiment is substantially the same as that shown in FIG. 1, and the polishing pad 2 is also substantially the same as the polishing pad of the second embodiment. As shown in the cross-sectional view of FIG. 8A, a first polishing pad base 36 having unevenness in a stepwise manner in the traveling direction of the wafer, and formed on the first polishing pad base 36 and having a hardness or elasticity higher than that of the first polishing pad base 36. The polishing pad substrate 20 includes a second polishing pad substrate 37 having a small surface, a high polishing slurry holding characteristic, or a combination of these characteristics and having a flat surface. In the traveling direction 38 of the wafer 4, the thickness of the second polishing pad base 37 changes discontinuously at the positions Y _AB , Y _BC , and Y _CB , and for each of the regions A, B, and C divided by these positions. , Hardness, elasticity, or holding characteristics of the polishing slurry are different, and regions A, B, and C, in which hardness or elasticity increases, or C, B, and A, in which the holding characteristics of the polishing slurry decrease.
In this order, regions where hardness or elasticity decreases or polishing slurry holding characteristics increase are alternately formed.

When the polishing pad according to the present embodiment is, for example, substantially disk-shaped, as shown in FIG.
Positions Y _AB , Y _BC , Y _CB in the polishing pad having a substantially disc shape
In each of the regions A, B, and C divided into a fan shape, the thickness of the second polishing pad base may be formed to be discontinuously changed in the traveling direction of the wafer.
FIG. 8A corresponds to a sectional view taken along line XX ′ in FIG. 8B. In addition, as shown in FIG. 8C, in a ring-shaped region that is a region through which a wafer passes, it is also possible to adopt a configuration in which hardness, elasticity, or holding characteristics of polishing slurry are different for each divided region. It is.
The polishing pad according to the present embodiment is similar to the second embodiment,
Polishing quality such as polishing uniformity and flatness over the entire surface of the wafer can be improved.

Fourth Embodiment The chemical mechanical polishing apparatus of this embodiment is substantially the same as that shown in FIG. 1, and the polishing pad 2 is also substantially the same as the polishing pad of the second embodiment. As shown in the cross-sectional view of FIG.
The polishing pad base 36 and an upper layer thereof are formed, and have a hardness or elasticity lower than that of the first polishing pad base 36, a high polishing slurry holding property, or a combination of these properties, and the surface is flattened. The polishing pad base 20 includes the second polishing pad base 37. Areas A, B, and C where the thickness of the second polishing pad base 37 is divided by positions Y _AB , Y _BC , and Y _CA in the traveling direction 38 of the wafer 4.
The hardness or elasticity of the polishing slurry is continuously changed in the direction, and the holding property of the polishing slurry is reduced, or these properties are combined. Here, in the areas B and C, the area A
Similarly to the above, the thickness of the second polishing pad base 37 changes, and at the positions Y _AB , Y _BC and Y _CA , the thickness of the second polishing pad base 37 changes discontinuously to form a saw shape. ing.

When the polishing pad according to the present embodiment is, for example, substantially disc-shaped, FIG. 7 (b) or (c)
It is possible to adopt a configuration similar to that of the second embodiment shown in FIG. As in the second embodiment, the polishing pad according to the present embodiment can improve polishing quality such as uniformity of polishing and flatness over the entire surface of the wafer.

Fifth Embodiment The chemical mechanical polishing apparatus of this embodiment is substantially the same as that shown in FIG. 1, and the polishing pad 2 is also substantially the same as the polishing pad of the second embodiment. As shown in the cross-sectional view of FIG. 10, a first polishing pad substrate 36 having a saw-shaped unevenness in the traveling direction of the wafer, and a layer formed thereon and having a lower hardness or elasticity than the first polishing pad substrate 36, or The polishing pad substrate 20 has a high polishing slurry holding characteristic or a combination of these characteristics, and includes the second polishing pad substrate 37 having a flat surface.
In the traveling direction 38 of the wafer 4, the thicknesses of the second polishing pad base 37 are divided into positions A _AB , Y _BC , and Y _CA in regions A, B,
C, the hardness or elasticity is continuously increased in the direction, and the polishing slurry is formed so that the holding property of the polishing slurry is continuously changed and lowered. Have a combination. Here, the area A,
The manner in which the thickness of the second polishing pad base 37 changes in the order of B and C becomes steeper. At positions Y _AB , Y _BC and Y _CA , the second
The thickness of the polishing pad base 37 changes discontinuously to form a saw shape.

In the case where the polishing pad according to the above-described embodiment has, for example, a substantially disk shape, FIG. 7B or FIG.
It is possible to adopt a configuration similar to that of the second embodiment shown in FIG. As in the second embodiment, the polishing pad according to the present embodiment can improve polishing quality such as uniformity of polishing and flatness over the entire surface of the wafer.

Sixth Embodiment The chemical mechanical polishing apparatus of this embodiment is substantially the same as that shown in FIG. 1, and the polishing pad 2 is also substantially the same as the polishing pad of the second embodiment. As shown in the cross-sectional view of FIG. 11, a first polishing pad substrate 36 having unevenness in a mountain shape in the traveling direction of the wafer, and formed on an upper layer and having a lower hardness or elasticity than the first polishing pad substrate 36, or The polishing pad substrate 20 has a high polishing slurry holding characteristic or a combination of these characteristics, and includes the second polishing pad substrate 37 having a flat surface.
The thickness of the second polishing pad base 37 changes in a chevron in the traveling direction 38 of the wafer 4 so that each of the regions A, B, and C forms one cycle, and the hardness, elasticity, or polishing slurry holding characteristics change, or It has a combination of these characteristics. Here, in the regions B and C, the thickness of the second polishing pad base 37 changes as in the region A.

As shown in the sectional view of FIG. 12, the thickness of the second polishing pad base 37 changes in the traveling direction 38 of the wafer 4 into a mountain shape such that each of the regions A, B and C has one cycle. The thickness of the second polishing pad base 37 may change steeply in the order of the regions A, B, and C.

As shown in the sectional view of FIG. 13, the thickness of the second polishing pad base 37 in the traveling direction 38 of the wafer 4 is sinusoidal so that each of the regions A, B, and C has one cycle. It is also possible to adopt a configuration in which the thickness of the second polishing pad base 37 changes in the regions B and C as in the region A.

As shown in the sectional view of FIG. 14, the thickness of the second polishing pad base 37 in the traveling direction 38 of the wafer 4 is sinusoidal so that each of the regions A, B and C has one cycle. The second polishing pad base 37 changes in the order of the regions A, B, and C.
It is also possible to adopt a configuration in which the thickness changes rapidly.

When the polishing pad according to this embodiment is, for example, substantially disk-shaped, FIG. 7B or FIG.
It is possible to adopt a configuration similar to that of the second embodiment shown in FIG. As in the second embodiment, the polishing pad according to the present embodiment can improve polishing quality such as uniformity of polishing and flatness over the entire surface of the wafer.

Seventh Embodiment A chemical mechanical polishing apparatus according to this embodiment is substantially the same as that shown in FIG. 1, and only the polishing pad 2 differs as follows.

The polishing pad according to this embodiment is similar to the polishing pad shown in FIG.
As shown in the cross-sectional view of FIG. 1, polishing pads having different hardness, elasticity, or polishing slurry holding characteristics (regions A, B, and C) separated by positions Y _AB , Y _BC , and Y _CA in the traveling direction of the wafer (No. The first polishing pad member 20a, the second polishing pad member 20b, and the third polishing pad member 20c) are formed adjacent to each other, and are formed, for example, at the positions Y _AB , Y _BC , and Y _CA in the aforementioned direction. It is formed so that hardness or elasticity is discontinuously increased, or holding characteristics of the polishing slurry are lowered, or has a combination of these characteristics.

When the polishing pad according to the present embodiment is, for example, substantially disk-shaped, the same configuration as that of the second embodiment shown in FIG. 7B can be employed. A polishing pad member (a first polishing pad member 20a, a second polishing pad) having different hardness, elasticity, or holding characteristics of polishing slurry for each of the regions A, B, and C divided in a fan shape by Y _AB , Y _BC , and Y _CA. The pad member 20b and the third polishing pad member 20c) can be formed adjacent to each other. FIG. 15 corresponds to a cross-sectional view taken along line XX ′ in FIG. 7B. As described above, regions having different hardness, elasticity, or holding characteristics of the polishing slurry are formed, thereby improving the flatness over the entire surface of the wafer in regions where the hardness or elasticity is high or the holding characteristics of the polishing slurry are low. On the other hand, uniformity and reproducibility of polishing can be improved in a region where hardness or elasticity is low or polishing slurry holding characteristics are high. Therefore, polishing quality such as polishing uniformity and flatness over the entire surface of the wafer can be improved. In particular, since the hardness or elasticity is increased in the traveling direction of the wafer, or the polishing slurry is formed so as to have low holding characteristics, the pressure applied to the edge portion of the wafer from the polishing pad when polishing is performed. It is possible to suppress the increase in the polishing rate at the edge portion of the wafer and the increase in the polishing amount.

When the polishing pad according to the present embodiment has, for example, a substantially disk shape, the same configuration as that of the second embodiment shown in FIG. 7C can be adopted. In the ring-shaped region, it is also possible to adopt a configuration in which hardness, elasticity, or holding characteristics of the polishing slurry are different for each of the divided regions.

Eighth Embodiment The chemical mechanical polishing apparatus of this embodiment is substantially the same as that shown in FIG. 1, and the polishing pad 2 is also substantially the same as the polishing pad of the seventh embodiment. As shown in the cross-sectional view of FIG. 16, a polishing pad member having different hardness, elasticity, or polishing slurry holding characteristics for each of regions A, B, and C separated by positions Y _AB , Y _BC , and Y _CB in the traveling direction of the wafer. (A first polishing pad member 20a, a second polishing pad member 20b, and a third polishing pad member 20c) are formed adjacent to each other, and are formed, for example, in the order of A, B, and C in the traveling direction 38 of the wafer 4. A region in which hardness or elasticity is high or a polishing slurry holding characteristic is low and a region in which hardness or elasticity is low in order of C, B, and A or the polishing slurry holding characteristic is high are alternately formed. .

When the polishing pad according to the present embodiment is, for example, substantially disk-shaped, the same configuration as that of the third embodiment shown in FIG. 8B can be adopted. A polishing pad member (the first polishing pad member 20a, the second polishing pad) having the hardness, elasticity, or holding characteristics of the polishing slurry different for each of the regions A, B, and C divided in a fan shape by Y _AB , Y _BC , and Y _CB. The pad member 20b and the third polishing pad member 20c) can be formed adjacent to each other. FIG. 16 corresponds to a cross-sectional view taken along line XX ′ in FIG. In addition, the same configuration as that of the third embodiment shown in FIG. 8C can be adopted. In the ring-shaped region which is a region through which the wafer passes, hardness, elasticity, or polishing slurry is set for each divided region. It is also possible to adopt a configuration having different holding characteristics. The polishing pad according to the present embodiment can improve polishing quality such as uniformity of polishing and flatness over the entire surface of the wafer, similarly to the seventh embodiment.

Ninth Embodiment The chemical mechanical polishing apparatus of this embodiment is substantially the same as that shown in FIG. 1, and the polishing pad 2 is also substantially the same as the polishing pad of the seventh embodiment. As shown in the cross-sectional view of FIG. 17, the polishing pad base 20 includes a first polishing pad base 36 and a second polishing pad base 37 formed thereon, and the second polishing pad base 37 is a wafer. A polishing pad member (first polishing pad member 37) having different hardness, elasticity, or holding characteristics of the polishing slurry for each of regions A, B, and C separated by positions Y _AB , Y _BC , and Y _CA in the traveling direction of
a, second polishing pad member 37b, third polishing pad member 3
7c) are formed adjacent to each other, for example,
In the direction, the hardness or elasticity is discontinuously increased at the positions Y _AB , Y _BC , and Y _CA , or the holding characteristics of the polishing slurry are reduced, or these characteristics are combined. .

When the polishing pad according to the present embodiment is, for example, substantially disk-shaped, FIG. 7B or FIG.
It is possible to adopt a configuration similar to that of the second embodiment shown in FIG. As in the second embodiment, the polishing pad according to the present embodiment can improve polishing quality such as uniformity of polishing and flatness over the entire surface of the wafer.

As shown in the sectional view of FIG.
The polishing pad base 36 can be formed into a shape having irregularities in a saw-like shape in the traveling direction of the wafer. In this case, for example, the areas A, B, and C are formed in a sawtooth shape so as to form one cycle, and the hardness or elasticity increases in the order of the areas A, B, and C, or the holding characteristics of the polishing slurry decrease. It may be configured or formed to have a combination of these characteristics. In this case, for example, the first polishing pad member 37a, the second polishing pad member 37b, and the third polishing pad member 37c constituting the second polishing pad base 37 are formed.
By making the hardness and the like of the first polishing pad base 36 different from each other, it is possible to increase the degree of change in the property such as the hardness of each of the regions A, B and C. In the case of a substantially disk shape, the second disk shown in FIG.
A configuration similar to that of the embodiment can be adopted.

As shown in the sectional view of FIG.
The polishing pad base 36 can be formed into a shape having unevenness in the shape of a mountain in the traveling direction of the wafer. In this case, for example, the areas A, B, and C are formed into a mountain shape so as to have one cycle, and the hardness or elasticity increases in the order of A, B, and C in the traveling direction 38 of the wafer 4, or the polishing slurry is held. It is possible to adopt a configuration in which regions where the characteristics become low and regions where the hardness or elasticity becomes low in the order of C, B and A, or where the holding characteristics of the polishing slurry become high are alternately formed. FIG. 8B or FIG. 8C in the case of a substantially disk shape.
It is possible to adopt a configuration similar to the third embodiment shown in FIG.

Further, as shown in the sectional view of FIG.
The polishing pad base 36 may have a shape having irregularities in a sine wave shape in the traveling direction of the wafer. In this case, for example, the areas A, B, and C are formed into a sinusoidal shape so as to have one cycle, and A, B, C
The regions in which the hardness or elasticity is increased or the polishing slurry holding characteristics are decreased in this order are alternately formed with the regions in which the hardness or elasticity is decreased or the polishing slurry holding characteristics are increased in the order of C, B and A. Configuration. In the case of a substantially disk shape, a configuration similar to that of the third embodiment shown in FIG. 8B or 8C can be used.

The polishing pads having the shapes described in the above embodiments can be made of, for example, polyurethane materials, silicone rubber materials, hard rubber materials, polyfluoroethylene materials, polyamide materials, polyvinyl chloride materials, And mixtures thereof. It can be a polishing pad having appropriate hardness and elasticity for polishing, increasing polishing efficiency,
Further, the polishing quality can be further improved. In addition, any of the polishing pads can be used by being incorporated in the polishing apparatus shown in FIG. 1, and a chemical mechanical polishing process can be performed on a substrate to be processed by using this polishing apparatus. .

The polishing pad of the present invention is not limited to the above embodiment. For example, the polishing pads of the second to ninth embodiments have no grooves or holes, but may have grooves or holes. Thus, the supply of the polishing slurry can be made uniform, and the polishing quality can be further improved. In addition, various changes can be made without departing from the gist of the present invention.

[0075]

As described above, according to the polishing pad of the present invention, the uniformity of the polishing amount over the entire surface of the wafer in the chemical mechanical polishing in which the interlayer insulating film is flattened in the manufacturing process of the semiconductor device. It is possible to improve the polishing quality such as flatness.

Further, the polishing pad of the present invention can be used by being incorporated in a polishing apparatus, and the substrate to be processed can be subjected to chemical mechanical polishing using the polishing apparatus. It is possible to improve polishing quality such as uniformity of polishing amount and flatness.

[Brief description of the drawings]

FIG. 1 is a schematic view of a chemical mechanical polishing apparatus according to the present invention and a conventional example.

FIG. 2A is a schematic view showing a groove pattern of a polishing pad according to the first embodiment of the present invention.
FIG. 2B is a cross-sectional view in which the groove is enlarged, and FIG. 2C is a cross-sectional view illustrating a state when polishing is performed.

FIGS. 3A, 3B, 3C, and 3D are cross-sectional views in which grooves of the polishing pad according to the first embodiment of the present invention are enlarged.

FIG. 4 is a schematic view showing a groove pattern of the polishing pad according to the first embodiment of the present invention.

FIG. 5 is a schematic view showing a groove pattern of the polishing pad according to the first embodiment of the present invention.

FIG. 6 is a schematic view showing a groove pattern of the polishing pad according to the first embodiment of the present invention.

FIG. 7A is a sectional view of a polishing pad according to a second embodiment of the present invention, and FIGS. 7B and 7C are plan views.

FIG. 8A is a sectional view of a polishing pad according to a third embodiment of the present invention, and FIGS. 8B and 8C are plan views.

FIG. 9 is a sectional view of a polishing pad according to a fourth embodiment of the present invention.

FIG. 10 is a sectional view of a polishing pad according to a fifth embodiment of the present invention.

FIG. 11 is a sectional view of a polishing pad according to a sixth embodiment of the present invention.

FIG. 12 is a sectional view of a polishing pad according to a sixth embodiment of the present invention.

FIG. 13 is a sectional view of a polishing pad according to a sixth embodiment of the present invention.

FIG. 14 is a sectional view of a polishing pad according to a sixth embodiment of the present invention.

FIG. 15 is a sectional view of a polishing pad according to a seventh embodiment of the present invention.

FIG. 16 is a sectional view of a polishing pad according to an eighth embodiment of the present invention.

FIG. 17 is a sectional view of a polishing pad according to a ninth embodiment of the present invention.

FIG. 18 is a sectional view of a polishing pad according to a ninth embodiment of the present invention.

FIG. 19 is a sectional view of a polishing pad according to a ninth embodiment of the present invention.

FIG. 20 is a sectional view of a polishing pad according to a ninth embodiment of the present invention.

FIG. 21 is a schematic view showing a groove pattern of a polishing pad according to a conventional example.

FIG. 22 is a schematic view showing a groove pattern of a polishing pad according to a conventional example.

FIG. 23A is an enlarged cross-sectional view of a groove portion of a polishing pad according to a conventional example, and FIG. 23B is a cross-sectional view illustrating a state when polishing is performed.

[Description of Signs] 1 ... polishing plate rotating shaft, 2 ... polishing pad, 3 ... polishing plate, 4 ... substrate to be processed (wafer), 5 ... carrier,
6: polishing slurry supply nozzle, 7: polishing slurry supply device,
8 Carrier rotating shaft, 9 Polishing pressure adjusting mechanism, 10 Polishing slurry, 11 Applied dresser pressure, 14 Wafer backing film, 20 Polishing pad base, 20a,
20b, 20c: polishing pad members, 21, 22, 23,
24, 27, 30 groove, 31 pressing region, 32 groove side wall, 33, 33 'shoulder portion, 34 polishing pad thickness in pressing region, 35 polishing pad thickness, 36 first polishing pad Substrate, 37... Second polishing pad substrate, 37a, 37b, 37
c: polishing pad member, 38: wafer traveling direction, 41:
Edge portion of wafer, 101: dresser, 102: dresser die, 103: dressing layer of polishing pad by dress, 203: convex portion, 210: center of polishing pad, 2
30 ... extended portion of groove, 301 ... trajectory of wafer center, 30
2: Passage area excluding the edge of the wafer.

Claims (99)

[Claims] 1. A polishing pad for use in a chemical mechanical polishing method for polishing a substrate to be polished, wherein the polishing pad has a groove formed therein, and at least the groove on the front side in the traveling direction of the substrate to be polished. The polishing pad is formed in a forward tapered shape with the shoulder of the upper part widened upward. 2. The polishing pad according to claim 1, wherein said forward tapered shape is constituted by a curved surface. 3. The polishing pad according to claim 1, wherein the forward tapered shape is constituted by a plane inclined with respect to the surface of the polishing pad. 4. The polishing pad according to claim 1, wherein a shoulder portion of said groove on the rear side in the traveling direction of said substrate to be polished is also formed in a forward tapered shape that widens upward. 5. The polishing pad according to claim 1, wherein a side wall surface of the groove on the front side in the traveling direction of the substrate to be polished is formed in a forward tapered shape from a bottom of the groove. 6. A groove formed in a forward tapered shape from the bottom of the groove on the front side in the direction of travel of the substrate to be polished, the side wall surface of the groove on the rear side in the direction of travel of the substrate to be polished. The polishing pad according to claim 5, wherein the polishing pad is in contact with the polishing pad. 7. The polishing pad according to claim 6, wherein the shoulder of the groove on the rear side in the traveling direction of the substrate to be polished is also formed in a forward tapered shape that widens upward. 8. A material formed from a material selected from a polyurethane material, a silicone rubber material, a hard rubber material, a polyfluorinated ethylene material, a polyamide material, a polyvinyl chloride material, and a mixture thereof. Item 4. The polishing pad according to Item 1. 9. A polishing pad having the groove formed thereon,
2. The polishing pad according to claim 1, wherein a flattened coating layer is formed of a material having hardness or elasticity lower than that of the material constituting the polishing pad or having high polishing slurry holding characteristics. 10. A groove formed in the polishing pad,
At least different distances from the center of the polishing pad 2
The polishing pad according to claim 1, further comprising a region formed at a position connecting the two points. 11. A groove formed in the polishing pad,
The polishing pad according to claim 10, further comprising a region formed at a position where the distance from the center of the polishing pad is equal. 12. A polishing pad for use in a chemical mechanical polishing method for polishing a substrate to be polished, wherein at least a region near the surface of the polishing pad has different hardness, elasticity or polishing slurry holding characteristics. Polishing pad. 13. A substrate for forming the polishing pad, comprising:
A polishing pad substrate, and a second polishing pad substrate formed on the first polishing pad substrate and having a different hardness, elasticity or polishing slurry holding characteristic from the first polishing pad substrate and having a flattened surface. 13. The polishing pad according to claim 12, wherein a thickness of the second polishing pad substrate changes in a traveling direction of the substrate to be polished, and a region having a different hardness, elasticity or polishing slurry holding characteristic is formed. 14. The second polishing pad base has higher hardness or elasticity than the first polishing pad base, or
14. The polishing pad according to claim 13, wherein the polishing pad is formed of a material having a low holding property of the polishing slurry. 15. The second polishing pad substrate has lower hardness or elasticity than the first polishing pad substrate, or
14. The polishing pad according to claim 13, wherein the polishing pad is formed of a material having a high holding property for the polishing slurry. 16. A polishing pad comprising a plurality of polishing pad members having different hardness, elasticity, or holding characteristics of polishing slurry, wherein the plurality of polishing pad members are arranged adjacent to each other, and 13. The polishing pad according to claim 12, wherein regions having different elasticity or holding characteristics of the polishing slurry are formed. 17. The second polishing pad base has a plurality of polishing pad members having different hardness, elasticity, or holding characteristics of polishing slurry, and the plurality of polishing pad members are arranged adjacent to each other to obtain hardness and elasticity. 14. The polishing pad according to claim 13, wherein regions having different polishing slurry holding characteristics are formed. 18. The polishing pad according to claim 12, further comprising, in a region near the surface of the polishing pad, a region in which the hardness or elasticity increases or the polishing slurry holding characteristics decrease in the advancing direction of the substrate to be polished. The polishing pad as described. 19. A polishing apparatus according to claim 19, further comprising, in a region near the surface of said polishing pad, a region in which hardness or elasticity decreases or polishing slurry holding characteristics increase in order in the direction of movement of said substrate to be polished. 19. The polishing pad according to 18. 20. In a region near the surface of the polishing pad, hardness, elasticity, or polishing slurry holding characteristics change discontinuously in the advancing direction of the substrate to be polished.
The polishing pad as described. 21. The polishing pad according to claim 12, wherein in a region near the surface of the polishing pad, hardness, elasticity, or a holding characteristic of a polishing slurry continuously changes in a traveling direction of the substrate to be polished. 22. The polishing pad according to claim 1, wherein the polishing pad has a substantially disc shape, and the polishing pad is formed such that hardness, elasticity, or holding characteristics of the polishing slurry are different for each of the fan-shaped divided regions in the substantially disc shaped polishing pad. Item 13. The polishing pad according to Item 12. 23. In the substantially disk-shaped polishing pad, the hardness or elasticity is increased or the polishing slurry holding characteristics are decreased in the direction of movement of the substrate to be polished in each of the fan-shaped divided regions. 23. Formed
The polishing pad as described. 24. The polishing pad has a substantially disk shape, and is formed so that hardness, elasticity, or holding characteristics of a polishing slurry are different for each concentrically divided region in the substantially disk-shaped polishing pad. The polishing pad according to claim 12. 25. The polishing pad has a substantially disk shape, and in a ring-shaped region on the substantially disk-shaped polishing pad through which the substrate to be polished passes, hardness, elasticity or polishing slurry holding characteristics are set. 13. The polishing pad according to claim 12, wherein the polishing pad is formed differently. 26. In a ring-shaped region on the substantially disk-shaped polishing pad through which the substrate to be polished passes, hardness or elasticity increases or polishing slurry increases in the direction of travel of the substrate to be polished. 26. The polishing pad according to claim 25, wherein the polishing pad is formed so as to have low holding characteristics. 27. The polishing pad according to claim 1, wherein the polishing pad has a substantially belt-like shape.
13. The polishing pad according to claim 12, wherein the polishing pad is formed so as to have different elasticity or holding characteristics of the polishing slurry. 28. Hardness or elasticity increases in the advancing direction of the substrate to be polished in each region divided by a line perpendicular to the advancing direction of the substrate to be polished in the substantially belt-shaped polishing pad, or 28. The polishing pad according to claim 27, wherein the polishing pad is formed so as to have low holding characteristics of the polishing slurry. 29. The polishing pad has a substantially belt shape, and retains hardness, elasticity, or polishing slurry in each region of the substantially belt-shaped polishing pad divided by a line parallel to a traveling direction of the substrate to be polished. 13. The polishing pad according to claim 12, wherein the polishing pad is formed to have different characteristics. 30. The polishing pad according to claim 1, wherein the polishing pad has a substantially belt-like shape, and a hardness, 13. The polishing pad according to claim 12, wherein the polishing pad is formed so as to have different elasticity or holding characteristics of the polishing slurry. 31. In the central region of the substantially belt-shaped polishing pad, which is a region through which the substrate to be polished passes on the substantially disk-shaped polishing pad, the hardness or the hardness is sequentially determined in the advancing direction of the polished substrate. 31. The polishing pad according to claim 30, wherein the polishing pad is formed to have high elasticity or low holding characteristics of the polishing slurry. 32. A material formed from a material selected from a polyurethane material, a silicone rubber material, a hard rubber material, a polyfluorinated ethylene material, a polyamide material, a polyvinyl chloride material, and a mixture thereof. Item 12
The polishing pad as described. 33. The polishing pad according to claim 12, wherein a groove or a hole is formed on a surface of said polishing pad. 34. A polishing apparatus having a polishing pad for polishing a substrate to be polished by a chemical mechanical polishing method, wherein a groove is formed in the polishing pad, and at least a traveling direction of the substrate to be polished. A polishing apparatus, wherein a shoulder portion of the groove on the front side is formed in a forward tapered shape that widens upward. 35. The polishing apparatus according to claim 34, wherein said forward tapered shape is constituted by a curved surface. 36. The polishing apparatus according to claim 34, wherein said forward tapered shape is constituted by a plane inclined with respect to a surface of said polishing pad. 37. The polishing apparatus according to claim 34, wherein a shoulder portion of said groove on the rear side in the advancing direction of said substrate to be polished is also formed in a forward tapered shape expanding upward. 38. The polishing apparatus according to claim 34, wherein a side wall surface of the groove on the front side in the traveling direction of the substrate to be polished is formed in a forward tapered shape from the bottom of the groove. 39. A side wall surface of the groove, which is formed in a forward tapered shape from the bottom of the groove in a forward direction of the substrate to be polished, is a side wall surface of the groove in a rearward direction in the direction of the polished substrate. 39. The polishing apparatus according to claim 38, wherein the polishing apparatus is in contact with the polishing apparatus. 40. The polishing apparatus according to claim 39, wherein a shoulder portion of said groove on the rear side in the advancing direction of said substrate to be polished is also formed in a forward tapered shape which widens upward. 41. The polishing pad is made of a material selected from a polyurethane material, a silicone rubber material, a hard rubber material, a polyfluorinated ethylene material, a polyamide material, a polyvinyl chloride material, and a mixture thereof. 35. The polishing apparatus according to claim 34, wherein the polishing apparatus is formed. 42. A coating layer flattened by a material having a hardness or elasticity lower than that of a material constituting the polishing pad or a material having a high polishing slurry holding property is formed on a surface of the polishing pad in which the groove is formed. Claim 34
The polishing apparatus according to the above. 43. A groove formed in the polishing pad,
At least different distances from the center of the polishing pad 2
35. The polishing apparatus according to claim 34, further comprising an area formed at a position connecting the two points. 44. A groove formed in the polishing pad,
44. The polishing apparatus according to claim 43, further comprising a region formed at a position where the distance from the center of the polishing pad is equal. 45. A polishing apparatus having a polishing pad for polishing a substrate to be polished by a chemical mechanical polishing method, wherein at least a region near the surface of the polishing pad has different hardness, elasticity, or holding characteristics of polishing slurry. A polishing apparatus in which a region is formed. 46. A substrate for forming the polishing pad, comprising:
A polishing pad substrate, and a second polishing pad substrate formed on the first polishing pad substrate and having a different hardness, elasticity or polishing slurry holding characteristic from the first polishing pad substrate and having a flattened surface. 46. The polishing apparatus according to claim 45, wherein a thickness of the second polishing pad substrate changes in a traveling direction of the substrate to be polished to form a region having different hardness, elasticity, or polishing slurry holding characteristics. 47. The second polishing pad base has higher hardness or elasticity than the first polishing pad base, or
47. The polishing apparatus according to claim 46, wherein the polishing apparatus is formed of a material having low polishing slurry holding characteristics. 48. The second polishing pad base has lower hardness or elasticity than the first polishing pad base, or
47. The polishing apparatus according to claim 46, wherein the polishing apparatus is formed of a material having high polishing slurry holding characteristics. 49. A substrate forming the polishing pad has a plurality of polishing pad members having different hardness, elasticity, or holding characteristics of polishing slurry; 46. The polishing apparatus according to claim 45, wherein regions having different elasticity or holding characteristics of the polishing slurry are formed. 50. The second polishing pad base has a plurality of polishing pad members having different hardness, elasticity, or holding characteristics of polishing slurry, and the plurality of polishing pad members are arranged adjacent to each other to obtain hardness, elasticity. 47. The polishing apparatus according to claim 46, wherein regions having different polishing slurry holding characteristics are formed. 51. A region in the vicinity of the surface of the polishing pad, which has a region in which the hardness or elasticity increases or the polishing slurry holding characteristics decrease in the traveling direction of the substrate to be polished in order. The polishing apparatus according to the above. 52. A region in the vicinity of the surface of the polishing pad, further comprising a region in which hardness or elasticity decreases or polishing slurry holding characteristics increase in order in the direction of movement of the substrate to be polished. 51. The polishing apparatus according to 51, 53. In the vicinity of the surface of the polishing pad, the hardness, elasticity, or holding characteristics of the polishing slurry change discontinuously in the advancing direction of the substrate to be polished.
The polishing apparatus according to the above. 54. The polishing apparatus according to claim 45, wherein in a region near the surface of said polishing pad, hardness, elasticity, or a holding characteristic of a polishing slurry continuously changes in a traveling direction of said substrate to be polished. 55. A polishing pad according to claim 55, wherein said polishing pad is substantially disk-shaped, and said polishing pad is formed such that hardness, elasticity, or holding characteristics of polishing slurry are different for each of the fan-shaped divided regions in said substantially disk-shaped polishing pad. Item 46. The polishing apparatus according to Item 45. 56. In the substantially disk-shaped polishing pad, the hardness or elasticity is increased or the polishing slurry holding characteristic is decreased in the direction of travel of the substrate to be polished in each of the fan-shaped divided regions. 55. formed.
The polishing apparatus according to the above. 57. The polishing pad is substantially disk-shaped, and is formed such that hardness, elasticity, or holding characteristics of a polishing slurry are different for each concentrically divided region in the substantially disk-shaped polishing pad. The polishing apparatus according to claim 45. 58. The polishing pad has a substantially disk shape, and in a ring-shaped region on the substantially disk-shaped polishing pad through which the substrate to be polished passes, hardness, elasticity or polishing slurry holding characteristics are set. 46. The polishing apparatus according to claim 45, wherein the polishing apparatus is formed differently. 59. In a ring-shaped region on the substantially disk-shaped polishing pad through which the substrate to be polished passes, hardness or elasticity increases or polishing slurry increases in the traveling direction of the substrate to be polished in order. 59. The polishing apparatus according to claim 58, wherein the polishing apparatus is formed so as to have low holding characteristics. 60. The polishing pad according to claim 1, wherein the polishing pad has a substantially belt shape, and the hardness and hardness of each of the regions divided by a line perpendicular to the traveling direction of the substrate to be polished in the substantially belt-shaped polishing pad.
46. The polishing apparatus according to claim 45, wherein the polishing apparatus is formed so as to have different elasticity or polishing slurry holding characteristics. 61. In the substantially belt-shaped polishing pad, hardness or elasticity increases in the advancing direction of the polished substrate in each region divided by a line orthogonal to the advancing direction of the polished substrate, or 61. The polishing apparatus according to claim 60, wherein the polishing apparatus is formed so as to have low polishing slurry holding characteristics. 62. The polishing pad has a substantially belt shape, and the hardness, elasticity, or holding of polishing slurry is maintained in each of the substantially belt-shaped polishing pads divided by a line parallel to the traveling direction of the substrate to be polished. 46. The polishing apparatus according to claim 45, wherein the polishing apparatus is formed to have different characteristics. 63. The polishing pad has a substantially belt shape, and has a hardness and a hardness in a central region of the substantially belt-shaped polishing pad which is a region through which the substrate to be polished passes on the substantially disk-shaped polishing pad. 46. The polishing apparatus according to claim 45, wherein the polishing apparatus is formed so as to have different elasticity or polishing slurry holding characteristics. 64. In the central region of the substantially belt-shaped polishing pad, which is a region through which the substrate to be polished passes on the substantially disk-shaped polishing pad, the hardness or the hardness is sequentially determined in the advancing direction of the polished substrate. 64. The polishing apparatus according to claim 63, wherein the polishing apparatus is formed to have high elasticity or low holding characteristics of the polishing slurry. 65. The polishing pad is made of a material selected from a polyurethane material, a silicone rubber material, a hard rubber material, a polyfluoroethylene material, a polyamide material, a polyvinyl chloride material, and a mixture thereof. 46. The polishing apparatus according to claim 45, wherein the polishing apparatus is formed. 66. The polishing apparatus according to claim 45, wherein a groove or a hole is formed on a surface of said polishing pad. 67. A polishing method for polishing a substrate to be polished by a chemical mechanical polishing method using a polishing pad, wherein a groove is formed in the polishing pad, and at least a front of the substrate to be polished in a traveling direction. A polishing method using a polishing pad formed in a forward tapered shape in which a shoulder of the groove on the side is widened upward. 68. The polishing method according to claim 67, wherein a polishing pad in which said forward tapered shape is constituted by a curved surface is used. 69. The polishing method according to claim 67, wherein a polishing pad is used in which said forward tapered shape is constituted by a plane inclined with respect to the surface of said polishing pad. 70. The polishing method according to claim 67, wherein a polishing pad is used which is formed in a forward tapered shape such that the shoulder of said groove on the rear side in the traveling direction of said substrate to be polished also widens upward. 71. The polishing method according to claim 67, wherein a polishing pad is used in which a side wall surface of said groove on the front side in the traveling direction of said substrate to be polished is formed in a forward tapered shape from a bottom of said groove. 72. A side wall surface of the groove, which is formed in a forward tapered shape from the bottom of the groove on the front side in the traveling direction of the substrate to be polished, is a side wall surface of the groove on the rear side in the traveling direction of the substrate to be polished. 72. The polishing method according to claim 71, wherein a polishing pad in contact with the polishing pad is used. 73. The polishing method according to claim 72, wherein a polishing pad formed in a forward tapered shape in which a shoulder of the groove on the rear side in the traveling direction of the substrate to be polished is also widened upward. 74. Polishing made of a material selected from a polyurethane material, a silicone rubber material, a hard rubber material, a polyfluoroethylene material, a polyamide material, a polyvinyl chloride material, and a mixture thereof. 68. The polishing method according to claim 67, wherein a pad is used. 75. A coating layer flattened by a material having a hardness or elasticity lower than that of the material constituting the polishing pad or having a high polishing slurry holding characteristic is formed on the surface of the polishing pad in which the groove is formed. 68. The polishing method according to claim 67, wherein the polishing pad is used. 76. A groove formed in the polishing pad,
At least different distances from the center of the polishing pad 2
68. The polishing method according to claim 67, wherein a polishing pad having a region formed at a position connecting two points is used. 77. A groove formed in the polishing pad,
68. The polishing method according to claim 67, further comprising using a polishing pad having a region formed at a position where the distance from the center of the polishing pad is equal. 78. A polishing method for polishing a substrate to be polished by a chemical mechanical polishing method using a polishing pad, wherein at least a region near the surface of the polishing pad has different hardness, elasticity or polishing slurry holding characteristics. Polishing method using a polishing pad on which is formed. 79. A substrate for forming the polishing pad, comprising:
A polishing pad substrate and a second polishing pad substrate formed on the first polishing pad substrate and having a hardness, elasticity or polishing slurry holding characteristic different from that of the first polishing pad substrate and having a flattened surface. 79. A polishing pad having a region in which the thickness of the second polishing pad substrate changes in the direction of movement of the substrate to be polished and in which regions having different hardness, elasticity or polishing slurry holding characteristics are formed. Polishing method. 80. The second polishing pad base has higher hardness or elasticity than the first polishing pad base, or
80. The polishing method according to claim 79, wherein a polishing pad formed of a material having low polishing slurry holding characteristics is used. 81. The second polishing pad base has lower hardness or elasticity than the first polishing pad base, or
80. The polishing method according to claim 79, wherein a polishing pad formed of a material having high polishing slurry holding characteristics is used. 82. A substrate for forming the polishing pad, comprising a plurality of polishing pad members having different hardness, elasticity or polishing slurry holding characteristics, wherein the plurality of polishing pad members are arranged adjacent to each other, 79. The polishing method according to claim 78, wherein a polishing pad in which regions having different elasticity or holding characteristics of the polishing slurry are formed is used. 83. The second polishing pad base has a plurality of polishing pad members having different hardness, elasticity, or holding characteristics of polishing slurry, and the plurality of polishing pad members are arranged adjacent to each other, and the hardness and elasticity are set. 80. The polishing method according to claim 79, wherein a polishing pad in which regions having different polishing slurry holding characteristics are formed is used. 84. A polishing pad having a region in the vicinity of the surface of the polishing pad, in which the hardness or the elasticity increases or the polishing slurry holding characteristics decrease in order in the traveling direction of the substrate to be polished. The polishing method according to claim 78, wherein the polishing method is used. 85. A polishing pad further comprising, in a region in the vicinity of the surface of the polishing pad, a region in which hardness or elasticity is reduced or a holding property of a polishing slurry is changed in order in a traveling direction of the substrate to be polished. 85. The polishing method according to claim 84, wherein: 86. A polishing method according to claim 78, wherein in a region near the surface of said polishing pad, a polishing pad whose hardness, elasticity, or holding characteristics of a polishing slurry is discontinuously changed in a traveling direction of said substrate to be polished. . 87. The polishing method according to claim 78, wherein in a region near the surface of said polishing pad, a polishing pad whose hardness, elasticity, or holding characteristics of a polishing slurry continuously changes in the advancing direction of said substrate to be polished is used. 88. A polishing method in which the polishing pad has a substantially disk shape, and wherein the polishing pad is formed such that hardness, elasticity, or holding characteristics of a polishing slurry are different for each of the fan-shaped divided regions in the substantially disk-shaped polishing pad. The polishing method according to claim 78, wherein a pad is used. 89. In the substantially disk-shaped polishing pad, the hardness or the elasticity is increased or the polishing slurry holding characteristics are decreased in the direction of travel of the substrate to be polished in each of the fan-shaped divided regions. The polishing method according to claim 88, wherein the formed polishing pad is used. 90. The polishing pad is substantially disk-shaped, and is formed such that hardness, elasticity, or holding characteristics of the polishing slurry are different for each concentrically divided region in the substantially disk-shaped polishing pad. The polishing method according to claim 78, wherein a polishing pad is used. 91. The polishing pad has a substantially disk shape, and in a ring-shaped region on the substantially disk-shaped polishing pad through which the substrate to be polished passes, hardness, elasticity, or holding characteristics of the polishing slurry are reduced. 79. The polishing method according to claim 78, wherein a differently formed polishing pad is used. 92. In a ring-shaped area on the substantially disk-shaped polishing pad through which the substrate to be polished passes, hardness or elasticity increases or polishing slurry increases in the traveling direction of the substrate to be polished in order. 92. The polishing method according to claim 91, wherein a polishing pad formed so as to have low holding characteristics is used. 93. The polishing pad has a substantially belt shape, and the hardness and hardness of each region of the substantially belt-shaped polishing pad divided by a line perpendicular to the direction in which the substrate to be polished advances.
79. The polishing method according to claim 78, wherein a polishing pad formed so as to have different elasticity or holding characteristics of the polishing slurry is used. 94. In the substantially belt-shaped polishing pad, hardness or elasticity increases in the traveling direction of the substrate to be polished in each region divided by a line perpendicular to the traveling direction of the substrate to be polished, or 10. A polishing pad formed so as to have low holding characteristics for a polishing slurry.
3. The polishing method according to 3. 95. The polishing pad has a substantially belt shape, and the hardness, elasticity, or holding of the polishing slurry is maintained in each of the substantially belt-shaped polishing pads divided by a line parallel to the traveling direction of the substrate to be polished. 79. The polishing method according to claim 78, wherein a polishing pad formed so as to have different characteristics is used. 96. The polishing pad has a substantially belt shape, and a hardness of the polishing pad in a central region of the substantially belt-shaped polishing pad, which is a region through which the substrate to be polished passes on the substantially disk-shaped polishing pad, 79. The polishing method according to claim 78, wherein a polishing pad formed so as to have different elasticity or holding characteristics of the polishing slurry is used. 97. In the central region of the substantially belt-shaped polishing pad, which is a region through which the substrate to be polished passes on the substantially disk-shaped polishing pad, hardness or hardness is sequentially determined in the traveling direction of the polished substrate. 97. The polishing method according to claim 96, wherein a polishing pad formed to have high elasticity or low holding characteristics of the polishing slurry is used. 98. The polishing pad is made of a material selected from a polyurethane material, a silicone rubber material, a hard rubber material, a polyfluoroethylene material, a polyamide material, a polyvinyl chloride material, and a mixture thereof. The polishing method according to claim 78, wherein the formed polishing pad is used. 99. The polishing method according to claim 78, wherein a polishing pad having a groove or a hole formed on the surface of said polishing pad is used.