JP7032327B2 - 化学-機械的研磨用スラリー組成物 - Google Patents
化学-機械的研磨用スラリー組成物 Download PDFInfo
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- JP7032327B2 JP7032327B2 JP2018560761A JP2018560761A JP7032327B2 JP 7032327 B2 JP7032327 B2 JP 7032327B2 JP 2018560761 A JP2018560761 A JP 2018560761A JP 2018560761 A JP2018560761 A JP 2018560761A JP 7032327 B2 JP7032327 B2 JP 7032327B2
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
0.0005≦(S*C)*100≦4.5
ここで、Sは研磨剤表面1nm2に存在するシラノール基数であり(単位:個/nm2)、Cはスラリー組成物中のアルミニウム含量(重量%)である。前記シラノール基数は核磁気共鳴(nuclear magnetic resonance;NMR)分析法、熱重量分析法(thermogravimetric analysis:TGA)、フーリエ変換赤外分光分析(Fourier transform infrared spectroscopy:FT-IR)、滴定法(Titration)等で測定できるし、本発明ではNaOHを利用した滴定法で測定した。
Claims (13)
- 研磨剤;
アルミニウム0.000006乃至0.01重量%;及び
水を含み、
前記研磨剤表面のシラノール基の数とアルミニウム含量が次の数式1の条件を満足する、
化学-機械的研磨用スラリー組成物。
[数式1]
0.0005≦(S*C)*100≦4.5
(ここで、Sは研磨剤表面1nm 2 に存在するシラノール基数であり(単位:個/nm 2 )、Cはスラリー組成物中のアルミニウム含量(重量%)である。) - 前記研磨剤はヒュームドシリカ、コロイダルシリカ、及びこれらの混合物から成る群から選択され、その含量は0.001乃至20重量%である、請求項1に記載の化学-機械的研磨用スラリー組成物。
- 前記研磨剤表面のシラノール基の個数が1乃至10個/nm2である、請求項1又は2に記載の化学-機械的研磨用スラリー組成物。
- 前記アルミニウムはアルミニウム塩、アルミニウム原子が研磨剤表面に吸着された形態、及びアルミニウムイオン(Al3+)から成る群から選択される一つ以上の状態で存在する、請求項1~3のいずれか一項に記載の化学-機械的研磨用スラリー組成物。
- 前記アルミニウムはアルミニウムの塩化物(Cl)、硫酸塩(SO4)、アンモニウム塩(NH4)、カリウム塩(K)、水酸化物(OH)、メチル化物(CH3)、リン化物(P)及びこれらの混合物から成る群から選択される、請求項4に記載の化学-機械的研磨用スラリー組成物。
- 前記スラリー組成物はpH調節剤を更に含み、前記pH調節剤は硝酸、塩酸、硫酸、水酸化カリウム、水酸化ナトリウム、水酸化テトラメチルアンモニウム、水酸化テトラブチルアンモニウム及びこれらの混合物から成る群から選択される、請求項1~5のいずれか一項に記載の化学-機械的研磨用スラリー組成物。
- 前記スラリー組成物は0.005乃至10重量%の酸化剤を更に含む、請求項1~6のいずれか一項に記載の化学-機械的研磨用スラリー組成物。
- 前記スラリー組成物は0.0001乃至0.05重量%のバイオサイドを更に含む、請求項1~7のいずれか一項に記載の化学-機械的研磨用スラリー組成物。
- 前記スラリー組成物は0.00001乃至0.5重量%のナノフェロシリコン又は鉄塩化合物の触媒を更に含む、請求項1~8のいずれか一項に記載の化学-機械的研磨用スラリー組成物。
- 研磨剤0.001乃至20重量%;
アルミニウム0.000006乃至0.01重量%;
ナノフェロシリコン又は鉄塩化合物の触媒0.00001乃至0.5重量%;及び
残余の水を含み、
前記研磨剤表面のシラノール基の数とアルミニウム含量が次の数式1の条件を満足する、
化学-機械的研磨用スラリー組成物。
[数式1]
0.0005≦(S*C)*100≦4.5
(ここで、Sは研磨剤表面1nm 2 に存在するシラノール基数であり(単位:個/nm 2 )、Cはスラリー組成物中のアルミニウム含量(重量%)である。) - 前記スラリー組成物はpHを1乃至6に調節するpH調節剤及び0.0001乃至0.05重量%のバイオサイドを更に含み、
前記pH調節剤は硝酸、塩酸、硫酸、水酸化カリウム、水酸化ナトリウム、水酸化テトラメチルアンモニウム、水酸化テトラブチルアンモニウム及びこれらの混合物から成る群から選択される、請求項10に記載の化学-機械的研磨用スラリー組成物。 - 前記スラリー組成物は酸化剤0.005乃至10重量%を更に含む、請求項10又は11に記載の化学-機械的研磨用スラリー組成物。
- 研磨剤0.001乃至20重量%;
アルミニウム0.000006乃至0.01重量%;
ナノフェロシリコン又は鉄塩化合物の触媒0.00001乃至0.5重量%;
酸化剤0.005乃至10重量%;及び
残余の水を含み、
前記研磨剤表面のシラノール基の数とアルミニウム含量が次の数式1の条件を満足する、
化学-機械的研磨用スラリー組成物。
[数式1]
0.0005≦(S*C)*100≦4.5
(ここで、Sは研磨剤表面1nm 2 に存在するシラノール基数であり(単位:個/nm 2 )、Cはスラリー組成物中のアルミニウム含量(重量%)である。)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20160061230 | 2016-05-19 | ||
KR10-2016-0061230 | 2016-05-19 | ||
PCT/KR2017/005118 WO2017200297A1 (ko) | 2016-05-19 | 2017-05-17 | 화학-기계적 연마용 슬러리 조성물 |
Publications (3)
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JP2019522896A JP2019522896A (ja) | 2019-08-15 |
JP2019522896A5 JP2019522896A5 (ja) | 2020-06-18 |
JP7032327B2 true JP7032327B2 (ja) | 2022-03-08 |
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JP2018560761A Active JP7032327B2 (ja) | 2016-05-19 | 2017-05-17 | 化学-機械的研磨用スラリー組成物 |
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US (2) | US11001732B2 (ja) |
JP (1) | JP7032327B2 (ja) |
KR (1) | KR102450333B1 (ja) |
CN (1) | CN109153889B (ja) |
TW (1) | TWI736623B (ja) |
WO (1) | WO2017200297A1 (ja) |
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US11492513B2 (en) | 2018-03-30 | 2022-11-08 | Jgc Catalysts And Chemicals Ltd. | Dispersion liquid of silica particles, polishing composition, and method for producing dispersion liquid of silica particles |
KR20200082827A (ko) * | 2018-12-31 | 2020-07-08 | 주식회사 동진쎄미켐 | 화학-기계적 연마 입자 및 이를 포함하는 연마 슬러리 조성물 |
US20220055180A1 (en) * | 2019-03-27 | 2022-02-24 | Fujimi Incorporated | Polishing composition, polishing method, and method for producing substrate |
JP7356864B2 (ja) * | 2019-10-30 | 2023-10-05 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法 |
JP7356865B2 (ja) * | 2019-10-30 | 2023-10-05 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法 |
TW202138504A (zh) * | 2020-03-30 | 2021-10-16 | 日商福吉米股份有限公司 | 研磨用組合物 |
US11180679B1 (en) | 2020-05-27 | 2021-11-23 | Skc Solmics Co., Ltd. | Composition for semiconductor processing and method for polishing substrate using the same |
WO2023007722A1 (ja) * | 2021-07-30 | 2023-02-02 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
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2017
- 2017-05-17 JP JP2018560761A patent/JP7032327B2/ja active Active
- 2017-05-17 WO PCT/KR2017/005118 patent/WO2017200297A1/ko active Application Filing
- 2017-05-17 KR KR1020170061076A patent/KR102450333B1/ko active IP Right Grant
- 2017-05-17 CN CN201780030849.5A patent/CN109153889B/zh active Active
- 2017-05-19 TW TW106116625A patent/TWI736623B/zh active
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2018
- 2018-11-13 US US16/189,236 patent/US11001732B2/en active Active
- 2018-11-13 US US16/189,207 patent/US20190077993A1/en not_active Abandoned
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CN109153889A (zh) | 2019-01-04 |
US20190077993A1 (en) | 2019-03-14 |
KR20170131247A (ko) | 2017-11-29 |
US11001732B2 (en) | 2021-05-11 |
TW201811944A (zh) | 2018-04-01 |
US20190077994A1 (en) | 2019-03-14 |
CN109153889B (zh) | 2021-10-29 |
KR102450333B1 (ko) | 2022-10-04 |
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