JP6082097B2 - 酸化物および窒化物に選択的な高除去速度および低欠陥のcmp組成物 - Google Patents
酸化物および窒化物に選択的な高除去速度および低欠陥のcmp組成物 Download PDFInfo
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- JP6082097B2 JP6082097B2 JP2015500597A JP2015500597A JP6082097B2 JP 6082097 B2 JP6082097 B2 JP 6082097B2 JP 2015500597 A JP2015500597 A JP 2015500597A JP 2015500597 A JP2015500597 A JP 2015500597A JP 6082097 B2 JP6082097 B2 JP 6082097B2
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- 239000002905 metal composite material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- YACKEPLHDIMKIO-UHFFFAOYSA-N methylphosphonic acid Chemical compound CP(O)(O)=O YACKEPLHDIMKIO-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- NIPZZXUFJPQHNH-UHFFFAOYSA-N pyrazine-2-carboxylic acid Chemical compound OC(=O)C1=CN=CC=N1 NIPZZXUFJPQHNH-UHFFFAOYSA-N 0.000 description 1
- KZVLNAGYSAKYMG-UHFFFAOYSA-N pyridine-2-sulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=N1 KZVLNAGYSAKYMG-UHFFFAOYSA-N 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002455 scale inhibitor Substances 0.000 description 1
- 150000003335 secondary amines Chemical group 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 229920000428 triblock copolymer Polymers 0.000 description 1
- UZNHKBFIBYXPDV-UHFFFAOYSA-N trimethyl-[3-(2-methylprop-2-enoylamino)propyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)NCCC[N+](C)(C)C UZNHKBFIBYXPDV-UHFFFAOYSA-N 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
- 239000000230 xanthan gum Substances 0.000 description 1
- 229920001285 xanthan gum Polymers 0.000 description 1
- 235000010493 xanthan gum Nutrition 0.000 description 1
- 229940082509 xanthan gum Drugs 0.000 description 1
- UHVMMEOXYDMDKI-JKYCWFKZSA-L zinc;1-(5-cyanopyridin-2-yl)-3-[(1s,2s)-2-(6-fluoro-2-hydroxy-3-propanoylphenyl)cyclopropyl]urea;diacetate Chemical compound [Zn+2].CC([O-])=O.CC([O-])=O.CCC(=O)C1=CC=C(F)C([C@H]2[C@H](C2)NC(=O)NC=2N=CC(=CC=2)C#N)=C1O UHVMMEOXYDMDKI-JKYCWFKZSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
(i)基材を、研磨パッドおよびここで記載したような化学機械研磨組成物と接触させること、
(ii)この研磨パッドを、基材に対して、それらの間に本化学機械研磨組成物を備えて、動かすこと、および、
(iii)基材の少なくとも一部を削り取って、基材を研磨すること、
を含む基材の化学機械研磨方法を提供する。
この例は、本発明の研磨組成物を示しており、これはセリア研磨剤、1種もしくは2種以上のポリエチレンオキシド/ポリプロピレンオキシド共重合体、1種もしくは2種以上のノニオン性ポリマー、1種もしくは2種以上のホスホン酸、随意選択的な1種もしくは2種以上の窒素含有両性イオン性化合物、および水を含んでおり、良好な総合的な基材研磨特性、例えば、良好なpolySi選択性を備えたTEOSの好適な除去速度、を示すことができる。
この例は、本発明の研磨組成物を示しており、それは、セリア研磨剤、1種もしくは2種以上のノニオン性ポリマー、1種もしくは2種以上のホスホン酸、ピコリン酸、および水を含んでおり、良好な総合的な基材研磨特性、例えば良好なpolySi選択性を備えながら好適なTEOSの除去速度、を示すことができる。
この例は、セリア研磨剤、1種もしくは2種以上のノニオン性ポリマー、1種もしくは2種以上のホスホン酸、1種もしくは2種以上の窒素含有両性イオン性化合物、1種もしくは2種以上のスルホン酸共重合体、および水を含む、本発明の研磨剤組成物が、良好な総合的な基材研磨特性、例えば、良好なpolySiおよびSiNの選択性を備えた、好適なTEOSの除去速度、を示すことができることを示している。
この例は、セリア研磨剤、1種もしくは2種以上のノニオン性ポリマー、1種もしくは2種以上のホスホン酸、1種もしくは2種以上の窒素含有両性イオン性化合物、および水を含む、本発明の研磨組成物は、良好な総合的な基材研磨特性、例えば、良好なpolySiおよびSiN選択性を備えた、TEOSの好適な除去速度を、示すことができる。
この例は、セリア研磨剤、1種もしくは2種以上のノニオン性ポリマー、1種もしくは2種以上の窒素含有両性イオン性化合物、随意選択的な1種もしくは2種以上のスルホン酸共重合体、随意選択的な1種もしくは2種以上のアニオン性ポリマー、および水を含む本発明の研磨組成物が、良好な総合的な基材研磨特性、例えば、良好なpolySiおよびSiN選択性を備えた、好適なTEOS除去速度、を示すことができることを示している。
本発明は、以下の態様を含んでいる。
(1)下記の(a)〜(i)から本質的になる化学機械研磨組成物。
(a)セリア研磨剤、
(b)ポリアルキレングリコール、ポリエーテルアミン、ポリエチレンオキシド/ポリプロピレンオキシド共重合体、ポリアルキルアミド、ポリビニルピロリドン、シロキサンポリアルキレンオキシド共重合体、疎水性に変性されたポリアクリレート共重合体、親水性ノニオン性ポリマー、多糖、およびそれらの混合物からなる群から選ばれる1種もしくは2種以上のノニオン性ポリマー、
(c)1種もしくは2種以上の窒素含有両性イオン性化合物、
(d)随意選択的な1種もしくは2種以上のホスホン酸、
(e)随意選択的な1種もしくは2種以上のスルホン酸共重合体、
(f)随意選択的な1種もしくは2種以上のアニオン性共重合体、
(g)随意選択的な1種もしくは2種以上の、第四級アミンを含むポリマー、
(h)該研磨組成物のpHを調整する、随意選択的な1種もしくは2種以上の化合物、および、
(i)水
(2)前記セリア研磨剤が、湿式法セリアである、(1)記載の研磨組成物。
(3)前記湿式法セリアが、前記研磨組成物の0.1質量%〜10質量%の量で存在する、(2)記載の研磨組成物。
(4)前記1種もしくは2種以上のノニオン性ポリマーが、前記研磨組成物の1ppm〜3000ppmの量で存在する、(1)記載の研磨組成物。
(5)1種もしくは2種以上のポリアルキレングリコールが、前記研磨組成物中に存在する、(1)記載の研磨組成物。
(6)前記1種もしくは2種以上のポリアルキレングリコールが、ポリエチレングリコール、ポリプロピレングリコール、およびそれらの混合物からなる群から選ばれる、(5)記載の研磨組成物。
(7)ポリエチレングリコールが、前記研磨組成物中に存在する、(6)記載の研磨組成物。
(8)前記ポリエチレングリコールが、300g/モル〜15000g/モルの平均分子量を有する、(7)記載の研磨組成物。
(9)1種もしくは2種以上のポリエーテルアミンが、前記研磨組成物中に存在する、(1)記載の研磨組成物。
(10)1種もしくは2種以上のポリエチレンオキシド/ポリプロピレンオキシド共重合体が、前記研磨組成物中に存在する、(1)記載の研磨組成物。
(11)前記ポリエチレン/ポリプロピレンオキシド共重合体が、使用の地点で、1ppm〜5000ppmの量で存在する、(10)記載の研磨組成物。
(12)前記1種もしくは2種以上のポリエチレンオキシド/ポリプロピレンオキシド共重合体の平均分子量が、200g/モル〜4000g/モルである、(10)記載の研磨組成物。
(13)1種もしくは2種以上のシロキサンポリアルキレンオキシド共重合体が、前記研磨組成物中に存在する、(1)記載の研磨組成物。
(14)1種もしくは2種以上の疎水性に変性されたポリアクリレート共重合体が存在する、(1)記載の研磨組成物。
(15)前記1種もしくは2種以上の疎水性に変性されたポリアクリレート共重合体が、ポリエチレングリコール側鎖を有するポリアクリル酸主鎖を含むポリマーである、(14)記載の研磨組成物。
(16)前記1種もしくは2種以上の窒素含有両性イオン性化合物が、ピコリン酸である、(1)記載の研磨組成物。
(17)基材を化学機械研磨する方法であって、
(I)基材を、研磨パッドおよび下記の(a)〜(i)から本質的になる化学機械研磨組成物と接触させること、
(a)セリア研磨剤、
(b)ポリアルキレングリコール、ポリエーテルアミン、ポリエチレンオキシド/ポリプロピレンオキシド共重合体、ポリアルキルアミド、ポリビニルピロリドン、シロキサンポリアルキレンオキシド共重合体、疎水性に変性されたポリアクリレート共重合体、親水性ノニオン性ポリマー、多糖、およびそれらの混合物からなる群から選ばれる1種もしくは2種以上のノニオン性ポリマー、
(c)1種もしくは2種以上の窒素含有両性イオン性化合物、
(d)随意選択的な1種もしくは2種以上のホスホン酸、
(e)随意選択的な1種もしくは2種以上のスルホン酸共重合体、
(f)随意選択的な1種もしくは2種以上のアニオン性共重合体、
(g)随意選択的な1種もしくは2種以上の、第四級アミンを含むポリマー、
(h)該研磨組成物のpHを調整する、随意選択的な1種もしくは2種以上の化合物、および、
(i)水、
(II)該研磨パッドを、該基材に対して、該化学機械研磨組成物をそれらの間に備えて動かすこと、ならびに、
(III)該基材の少なくとも一部を削り取って、該基材を研磨すること、
を含んでなる方法。
(18)前記1種もしくは2種以上の窒素含有両性イオン性化合物が、ピコリン酸である、(17)記載の方法。
(19)前記基材が、シリコンを含む、(17)記載の方法。
(20)前記シリコンが、酸化ケイ素、窒化ケイ素、およびポリシリコン、ならびにそれらの組合わせからなる群から選ばれる、(19)記載の方法。
Claims (17)
- 下記の(a)〜(i)から本質的になる化学機械研磨組成物。
(a)セリア研磨剤、
(b)ポリアルキレングリコール、ポリエチレンオキシド/ポリプロピレンオキシド共重合体、ポリビニルピロリドン、シロキサンポリアルキレンオキシド共重合体、ヒドロキシエチルセルロース、およびそれらの混合物からなる群から選ばれる1種もしくは2種以上のノニオン性ポリマー、
(c)1種もしくは2種以上の窒素含有両性イオン性化合物、該窒素含有両性イオン性化合物は、ピコリン酸、ベタインまたはリシンである、
(d)随意選択的な1種もしくは2種以上のホスホン酸、
(e)随意選択的な1種もしくは2種以上のスルホン酸共重合体、
(f)ポリ(アクリル酸−アクリルアミド−メチルプロピルスルホン酸)、
(g)随意選択的な1種もしくは2種以上の、第四級アミンを含むポリマー、
(h)該研磨組成物のpHを調整する、随意選択的な1種もしくは2種以上の化合物、および、
(i)水 - 前記セリア研磨剤が、湿式法セリアである、請求項1記載の研磨組成物。
- 前記湿式法セリアが、前記研磨組成物の0.1質量%〜10質量%の量で存在する、請求項2記載の研磨組成物。
- 前記1種もしくは2種以上のノニオン性ポリマーが、前記研磨組成物の1ppm〜3000ppmの量で存在する、請求項1記載の研磨組成物。
- 1種もしくは2種以上のポリアルキレングリコールが、前記研磨組成物中に存在する、請求項1記載の研磨組成物。
- 前記1種もしくは2種以上のポリアルキレングリコールが、ポリエチレングリコール、ポリプロピレングリコール、およびそれらの混合物からなる群から選ばれる、請求項5記載の研磨組成物。
- ポリエチレングリコールが、前記研磨組成物中に存在する、請求項6記載の研磨組成物。
- 前記ポリエチレングリコールが、300g/モル〜15000g/モルの平均分子量を有する、請求項7記載の研磨組成物。
- 1種もしくは2種以上のポリエチレンオキシド/ポリプロピレンオキシド共重合体が、前記研磨組成物中に存在する、請求項1記載の研磨組成物。
- 前記ポリエチレンオキシド/ポリプロピレンオキシド共重合体が、使用の地点で、1ppm〜5000ppmの量で存在する、請求項9記載の研磨組成物。
- 前記1種もしくは2種以上のポリエチレンオキシド/ポリプロピレンオキシド共重合体の平均分子量が、200g/モル〜4000g/モルである、請求項9記載の研磨組成物。
- 1種もしくは2種以上のシロキサンポリアルキレンオキシド共重合体が、前記研磨組成物中に存在する、請求項1記載の研磨組成物。
- 前記1種もしくは2種以上の窒素含有両性イオン性化合物が、ピコリン酸である、請求項1記載の研磨組成物。
- 基材を化学機械研磨する方法であって、
(I)基材を、研磨パッドおよび下記の(a)〜(i)から本質的になる化学機械研磨組成物と接触させること、
(a)セリア研磨剤、
(b)ポリアルキレングリコール、ポリエチレンオキシド/ポリプロピレンオキシド共重合体、ポリビニルピロリドン、シロキサンポリアルキレンオキシド共重合体、ヒドロキシエチルセルロース、およびそれらの混合物からなる群から選ばれる1種もしくは2種以上のノニオン性ポリマー、
(c)1種もしくは2種以上の窒素含有両性イオン性化合物、該窒素含有両性イオン性化合物は、ピコリン酸、ベタインまたはリシンである、
(d)随意選択的な1種もしくは2種以上のホスホン酸、
(e)随意選択的な1種もしくは2種以上のスルホン酸共重合体、
(f)ポリ(アクリル酸−アクリルアミド−メチルプロピルスルホン酸)、
(g)随意選択的な1種もしくは2種以上の、第四級アミンを含むポリマー、
(h)該研磨組成物のpHを調整する、随意選択的な1種もしくは2種以上の化合物、および、
(i)水、
(II)該研磨パッドを、該基材に対して、該化学機械研磨組成物をそれらの間に備えて動かすこと、ならびに、
(III)該基材の少なくとも一部を削り取って、該基材を研磨すること、
を含んでなる方法。 - 前記1種もしくは2種以上の窒素含有両性イオン性化合物が、ピコリン酸である、請求項14記載の方法。
- 前記基材が、シリコンを含む、請求項14記載の方法。
- 前記シリコンが、酸化ケイ素、窒化ケイ素、およびポリシリコン、ならびにそれらの組合わせからなる群から選ばれる、請求項16記載の方法。
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KR101469258B1 (ko) * | 2009-12-31 | 2014-12-09 | 제일모직주식회사 | Cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
WO2011081503A2 (en) | 2009-12-31 | 2011-07-07 | Cheil Industries Inc. | Chemical mechanical polishing slurry compositions and polishing method using the same |
KR101480179B1 (ko) * | 2011-12-30 | 2015-01-09 | 제일모직주식회사 | Cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
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US20130244433A1 (en) | 2013-09-19 |
US9238753B2 (en) | 2016-01-19 |
WO2013138558A1 (en) | 2013-09-19 |
TW201336978A (zh) | 2013-09-16 |
KR20140133604A (ko) | 2014-11-19 |
JP2015516476A (ja) | 2015-06-11 |
CN104284960B (zh) | 2016-08-31 |
EP2825609A1 (en) | 2015-01-21 |
CN104284960A (zh) | 2015-01-14 |
KR102094559B1 (ko) | 2020-03-27 |
EP2825609B1 (en) | 2019-11-27 |
EP2825609A4 (en) | 2015-12-02 |
TWI573864B (zh) | 2017-03-11 |
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