JP2010267960A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010267960A5 JP2010267960A5 JP2010101763A JP2010101763A JP2010267960A5 JP 2010267960 A5 JP2010267960 A5 JP 2010267960A5 JP 2010101763 A JP2010101763 A JP 2010101763A JP 2010101763 A JP2010101763 A JP 2010101763A JP 2010267960 A5 JP2010267960 A5 JP 2010267960A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing composition
- silicon dioxide
- per minute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 claims 26
- 239000000126 substance Substances 0.000 claims 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 19
- 238000000034 method Methods 0.000 claims 9
- 239000000377 silicon dioxide Substances 0.000 claims 8
- 235000012239 silicon dioxide Nutrition 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 7
- 229920002635 polyurethane Polymers 0.000 claims 5
- 239000004814 polyurethane Substances 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- 125000000217 alkyl group Chemical group 0.000 claims 3
- 239000008119 colloidal silica Substances 0.000 claims 3
- 229920000642 polymer Polymers 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 239000006061 abrasive grain Substances 0.000 claims 2
- -1 alkylammonium compound Chemical class 0.000 claims 2
- 150000001768 cations Chemical group 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 125000002877 alkyl aryl group Chemical group 0.000 claims 1
- 125000003710 aryl alkyl group Chemical group 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 239000010419 fine particle Substances 0.000 claims 1
- 239000003112 inhibitor Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 125000003107 substituted aryl group Chemical group 0.000 claims 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/432,021 US8119529B2 (en) | 2009-04-29 | 2009-04-29 | Method for chemical mechanical polishing a substrate |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015098130A Division JP6128161B2 (ja) | 2009-04-29 | 2015-05-13 | 基板をケミカルメカニカルポリッシングする方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010267960A JP2010267960A (ja) | 2010-11-25 |
| JP2010267960A5 true JP2010267960A5 (enExample) | 2013-05-09 |
Family
ID=42813883
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010101763A Pending JP2010267960A (ja) | 2009-04-29 | 2010-04-27 | 基板をケミカルメカニカルポリッシングする方法 |
| JP2015098130A Active JP6128161B2 (ja) | 2009-04-29 | 2015-05-13 | 基板をケミカルメカニカルポリッシングする方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015098130A Active JP6128161B2 (ja) | 2009-04-29 | 2015-05-13 | 基板をケミカルメカニカルポリッシングする方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8119529B2 (enExample) |
| JP (2) | JP2010267960A (enExample) |
| KR (1) | KR101698008B1 (enExample) |
| CN (1) | CN101875182B (enExample) |
| DE (1) | DE102010018423B4 (enExample) |
| FR (1) | FR2944986B1 (enExample) |
| TW (1) | TWI506127B (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8491808B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride |
| US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| US8496843B2 (en) * | 2010-03-16 | 2013-07-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| US8232208B2 (en) | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
| US8568610B2 (en) | 2010-09-20 | 2013-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate |
| US8865013B2 (en) * | 2011-08-15 | 2014-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing tungsten |
| US8435420B1 (en) * | 2011-10-27 | 2013-05-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing using tunable polishing formulation |
| US8440094B1 (en) * | 2011-10-27 | 2013-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate |
| US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9303189B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9238754B2 (en) | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
| US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9293339B1 (en) * | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
| US9484212B1 (en) * | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| US9534148B1 (en) * | 2015-12-21 | 2017-01-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
| US9783702B1 (en) * | 2016-10-19 | 2017-10-10 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Aqueous compositions of low abrasive silica particles |
| US9803108B1 (en) | 2016-10-19 | 2017-10-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous compositions of stabilized aminosilane group containing silica particles |
| JP2020203980A (ja) * | 2019-06-17 | 2020-12-24 | 日本キャボット・マイクロエレクトロニクス株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3551168A (en) | 1966-08-01 | 1970-12-29 | Armour Ind Chem Co | Protective polish |
| KR20020086949A (ko) * | 2000-04-11 | 2002-11-20 | 캐보트 마이크로일렉트로닉스 코포레이션 | 실리콘 옥사이드의 선택적 제거를 위한 시스템 |
| US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
| US7704125B2 (en) * | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
| US20060189269A1 (en) * | 2005-02-18 | 2006-08-24 | Roy Pradip K | Customized polishing pads for CMP and methods of fabrication and use thereof |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| EP1566420A1 (en) * | 2004-01-23 | 2005-08-24 | JSR Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
| US20060205218A1 (en) * | 2005-03-09 | 2006-09-14 | Mueller Brian L | Compositions and methods for chemical mechanical polishing thin films and dielectric materials |
| US7731864B2 (en) * | 2005-06-29 | 2010-06-08 | Intel Corporation | Slurry for chemical mechanical polishing of aluminum |
| US7842192B2 (en) * | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
| US20080220610A1 (en) | 2006-06-29 | 2008-09-11 | Cabot Microelectronics Corporation | Silicon oxide polishing method utilizing colloidal silica |
| KR100827591B1 (ko) * | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
| US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
| JP5322455B2 (ja) * | 2007-02-26 | 2013-10-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JP5285866B2 (ja) * | 2007-03-26 | 2013-09-11 | 富士フイルム株式会社 | 研磨液 |
| JP2009081200A (ja) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | 研磨液 |
-
2009
- 2009-04-29 US US12/432,021 patent/US8119529B2/en active Active
-
2010
- 2010-04-12 TW TW099111244A patent/TWI506127B/zh active
- 2010-04-23 KR KR1020100038080A patent/KR101698008B1/ko active Active
- 2010-04-27 JP JP2010101763A patent/JP2010267960A/ja active Pending
- 2010-04-27 DE DE102010018423.3A patent/DE102010018423B4/de active Active
- 2010-04-28 CN CN2010101846936A patent/CN101875182B/zh active Active
- 2010-04-28 FR FR1053259A patent/FR2944986B1/fr active Active
-
2015
- 2015-05-13 JP JP2015098130A patent/JP6128161B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010267960A5 (enExample) | ||
| JP2015188093A5 (enExample) | ||
| JP2011205096A5 (enExample) | ||
| JP2011216873A5 (enExample) | ||
| JP2010541204A5 (enExample) | ||
| JP2011192995A5 (enExample) | ||
| JP2012109534A5 (enExample) | ||
| JP2013042131A5 (enExample) | ||
| US9074118B2 (en) | CMP method for metal-containing substrates | |
| KR102390227B1 (ko) | 텅스텐 버핑용 조성물 | |
| JP2019036714A5 (enExample) | ||
| JP6002983B2 (ja) | 調整可能な絶縁体研磨選択比を有するスラリー組成物及び基板研磨方法 | |
| JP6246263B2 (ja) | 酸化ケイ素および窒化ケイ素の少なくとも１種とポリシリコンとを含む基体を研磨する方法 | |
| JP2013042132A5 (enExample) | ||
| JP5957777B2 (ja) | ポリシリコン、酸化ケイ素および窒化ケイ素を含む基体を研磨する方法 | |
| JP2012039087A5 (enExample) | ||
| JP2009535816A5 (enExample) | ||
| JP2012094838A5 (enExample) | ||
| TW200811276A (en) | Polishing composition containing polyether amine | |
| JP2009513028A5 (enExample) | ||
| JP2012235111A5 (enExample) | ||
| JP2007273973A5 (enExample) | ||
| TW201431990A (zh) | 表面選擇性研磨組成物 | |
| JP2011205097A5 (enExample) | ||
| JP6990261B2 (ja) | 低研磨材濃度及び化学添加剤の組み合わせを有するシャロートレンチアイソレーション（ｓｔｉ）化学機械平坦化（ｃｍｐ）研磨 |