JP6128161B2 - 基板をケミカルメカニカルポリッシングする方法 - Google Patents
基板をケミカルメカニカルポリッシングする方法 Download PDFInfo
- Publication number
- JP6128161B2 JP6128161B2 JP2015098130A JP2015098130A JP6128161B2 JP 6128161 B2 JP6128161 B2 JP 6128161B2 JP 2015098130 A JP2015098130 A JP 2015098130A JP 2015098130 A JP2015098130 A JP 2015098130A JP 6128161 B2 JP6128161 B2 JP 6128161B2
- Authority
- JP
- Japan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing composition
- silicon dioxide
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims description 201
- 239000000126 substance Substances 0.000 title claims description 168
- 238000000034 method Methods 0.000 title claims description 43
- 239000000758 substrate Substances 0.000 title claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 171
- 239000000203 mixture Substances 0.000 claims description 109
- 239000000377 silicon dioxide Substances 0.000 claims description 71
- 235000012239 silicon dioxide Nutrition 0.000 claims description 69
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- 229920002635 polyurethane Polymers 0.000 claims description 18
- 239000004814 polyurethane Substances 0.000 claims description 18
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 17
- 239000006061 abrasive grain Substances 0.000 claims description 14
- 239000008119 colloidal silica Substances 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 150000001768 cations Chemical group 0.000 claims description 9
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 9
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 8
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000010419 fine particle Substances 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 3
- 239000011859 microparticle Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 9
- 125000002877 alkyl aryl group Chemical group 0.000 description 9
- 125000003710 aryl alkyl group Chemical group 0.000 description 9
- 230000010354 integration Effects 0.000 description 8
- 229920006395 saturated elastomer Polymers 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000012776 electronic material Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 125000003107 substituted aryl group Chemical group 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 3
- 241000408939 Atalopedes campestris Species 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- -1 alkylammonium compound Chemical class 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- OQZAQBGJENJMHT-UHFFFAOYSA-N 1,3-dibromo-5-methoxybenzene Chemical compound COC1=CC(Br)=CC(Br)=C1 OQZAQBGJENJMHT-UHFFFAOYSA-N 0.000 description 1
- JNXJYDMXAJDPRV-UHFFFAOYSA-N 2-(benzotriazol-1-yl)butanedioic acid Chemical compound C1=CC=C2N(C(C(O)=O)CC(=O)O)N=NC2=C1 JNXJYDMXAJDPRV-UHFFFAOYSA-N 0.000 description 1
- WKZLYSXRFUGBPI-UHFFFAOYSA-N 2-[benzotriazol-1-ylmethyl(2-hydroxyethyl)amino]ethanol Chemical compound C1=CC=C2N(CN(CCO)CCO)N=NC2=C1 WKZLYSXRFUGBPI-UHFFFAOYSA-N 0.000 description 1
- MVPKIPGHRNIOPT-UHFFFAOYSA-N 5,6-dimethyl-2h-benzotriazole Chemical compound C1=C(C)C(C)=CC2=NNN=C21 MVPKIPGHRNIOPT-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 101000983338 Solanum commersonii Osmotin-like protein OSML15 Proteins 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- RSRJCYZEMGBMDE-UHFFFAOYSA-J [K+].[K+].[K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O.[O-]S(=O)(=O)OOS([O-])(=O)=O Chemical compound [K+].[K+].[K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O.[O-]S(=O)(=O)OOS([O-])(=O)=O RSRJCYZEMGBMDE-UHFFFAOYSA-J 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000003868 ammonium compounds Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- MXJIHEXYGRXHGP-UHFFFAOYSA-N benzotriazol-1-ylmethanol Chemical compound C1=CC=C2N(CO)N=NC2=C1 MXJIHEXYGRXHGP-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- JROGBPMEKVAPEH-GXGBFOEMSA-N emetine dihydrochloride Chemical compound Cl.Cl.N1CCC2=CC(OC)=C(OC)C=C2[C@H]1C[C@H]1C[C@H]2C3=CC(OC)=C(OC)C=C3CCN2C[C@@H]1CC JROGBPMEKVAPEH-GXGBFOEMSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 229950006187 hexamethonium bromide Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- CPOUUWYFNYIYLQ-UHFFFAOYSA-M tetra(propan-2-yl)azanium;hydroxide Chemical compound [OH-].CC(C)[N+](C(C)C)(C(C)C)C(C)C CPOUUWYFNYIYLQ-UHFFFAOYSA-M 0.000 description 1
- HBCNJOTXLRLIAB-UHFFFAOYSA-M tetracyclohexylazanium;hydroxide Chemical compound [OH-].C1CCCCC1[N+](C1CCCCC1)(C1CCCCC1)C1CCCCC1 HBCNJOTXLRLIAB-UHFFFAOYSA-M 0.000 description 1
- YZTANSPZKPAMGE-UHFFFAOYSA-M tetracyclopentylazanium;hydroxide Chemical compound [OH-].C1CCCC1[N+](C1CCCC1)(C1CCCC1)C1CCCC1 YZTANSPZKPAMGE-UHFFFAOYSA-M 0.000 description 1
- DOYCTBKOGNQSAL-UHFFFAOYSA-M tetracyclopropylazanium;hydroxide Chemical compound [OH-].C1CC1[N+](C1CC1)(C1CC1)C1CC1 DOYCTBKOGNQSAL-UHFFFAOYSA-M 0.000 description 1
- RROIKUJKYDVRRG-UHFFFAOYSA-M tetrakis(2-methylpropyl)azanium;hydroxide Chemical compound [OH-].CC(C)C[N+](CC(C)C)(CC(C)C)CC(C)C RROIKUJKYDVRRG-UHFFFAOYSA-M 0.000 description 1
- JVOPCCBEQRRLOJ-UHFFFAOYSA-M tetrapentylazanium;hydroxide Chemical compound [OH-].CCCCC[N+](CCCCC)(CCCCC)CCCCC JVOPCCBEQRRLOJ-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- ALYGOOWRCDZDTJ-UHFFFAOYSA-L tributyl-[6-(tributylazaniumyl)hexyl]azanium;dihydroxide Chemical compound [OH-].[OH-].CCCC[N+](CCCC)(CCCC)CCCCCC[N+](CCCC)(CCCC)CCCC ALYGOOWRCDZDTJ-UHFFFAOYSA-L 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- FAPSXSAPXXJTOU-UHFFFAOYSA-L trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;dibromide Chemical compound [Br-].[Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C FAPSXSAPXXJTOU-UHFFFAOYSA-L 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明のケミカルメカニカルポリッシング方法で用いるケミカルメカニカルポリッシング組成物の特定の配合の選択が、目的とする二酸化ケイ素除去速度を得るカギである。
ケミカルメカニカルポリッシング組成物の調製
研磨実施例PC1〜PC4およびPA1〜PA20で用いるケミカルメカニカルポリッシング組成物(すなわち、それぞれケミカルメカニカルポリッシング組成物C1〜C4およびA1〜A20)は、表1に示す量で成分を組み合わせ、前述のようにリン酸または硝酸を用いて表1に示す最終pHにpHを調整して、組成物を調製した。
HMB:Sigma-Aldrich Co.製ヘキサメトニウムブロミド(Sigma grade):
ケミカルメカニカルポリッシング実験
比較例C2〜C3並びに実施例A1〜A9および実施例A16〜A20にしたがって調製したケミカルメカニカルポリッシング組成物を用いて、二酸化ケイ素の除去速度研磨試験を行った。具体的には、表1で特定されるケミカルメカニカルポリッシング組成物C2〜C3、A1〜A9およびA16〜A20のそれぞれに対する二酸化ケイ素の除去速度。これらの二酸化ケイ素の除去速度実験を、ケイ素基板上に二酸化ケイ素フィルムを有する8インチブランケットウエーハ(blanket wafer)上で、Strasbaugh Model 6EC研磨機およびIC1010(商標)ポリウレタン研磨パッド(Rohm and Haas Electronic Materials CMP Inc.から市販されている)を用いて、ダウンフォース20.7kPa、ケミカルメカニカルポリッシング組成物流量200ml/min、テーブル回転速度93rpmおよびキャリヤ回転速度87rpmで行った。Jordan Valley JVX-5200T 計測ツールを用いて研磨前および後のフィルム厚さを測定することにより、二酸化ケイ素の除去速度を求めた。二酸化ケイ素の除去速度実験の結果を表2に示す。
ケミカルメカニカルポリッシング実験
比較例C1並びに実施例A10、A12〜13およびA15にしたがって調製したケミカルメカニカルポリッシング組成物を用いて、二酸化ケイ素の除去速度研磨試験を行った。具体的には、表1で特定されるケミカルメカニカルポリッシング組成物C1、A10、A12〜13およびA15それぞれに対する二酸化ケイ素の除去速度。これらの二酸化ケイ素の除去速度実験を、ケイ素基板上に二酸化ケイ素フィルムを有する8インチブランケットウエーハ上で、Applied Materials, Inc.のMirra200mm研磨機およびIC1010(商標)ポリウレタン研磨パッド(Rohm and Haas Electronic Materials CMP Inc.から市販されている)を用いて、ダウンフォース20.7kPa、ケミカルメカニカルポリッシング組成物流量200ml/min、テーブル回転速度93rpmおよびキャリヤ回転速度87rpmで行った。Jordan Valley JVX-5200T計測ツールを用いて研磨前および後のフィルム厚さを測定することにより、二酸化ケイ素の除去速度を求めた。二酸化ケイ素の除去速度実験の結果を表3に示す。
ケミカルメカニカルポリッシング実験
比較例C4並びに実施例A11およびA14にしたがって製造したケミカルメカニカルポリッシング組成物を用いて、二酸化ケイ素対窒化ケイ素の選択性の研磨試験を行った。具体的には、表1で特定されるケミカルメカニカルポリッシング組成物C4、A11およびA14それぞれに対する二酸化ケイ素の除去速度および窒化ケイ素の除去速度を測定した。
Claims (5)
- 基板をケミカルメカニカルポリッシングする方法であって、
二酸化ケイ素及びSiC、SiCN、Si 3 N 4 、SiCOおよびポリシリコンの少なくとも1種を含む基板を用意し;
水、平均粒子サイズ20〜30nmであるコロイダルシリカ砥粒1〜5重量%;式(I):
(式中、各Xは独立に、NおよびPから選択され;
R1は、−(CH2)6−であり;そして、
R2、R3、R4、R5、R6およびR7は、それぞれ独立に、C 2 −C 6 アルキル基から選択される)で表されるジ第四級カチオン0.02〜0.06重量%;および
第四級アルキルアンモニウム化合物0〜0.1重量%を含むケミカルメカニカルポリッシング組成物を用意し;
ケミカルメカニカルポリッシングパッドを用意し;
ケミカルメカニカルポリッシングパッドと基板の界面にダウンフォース0.1〜5psiで動的接触を作り出し;次いで
ケミカルメカニカルポリッシング組成物を、ケミカルメカニカルポリッシングパッド上で、ケミカルメカニカルポリッシングパッドと基板の界面または界面近くに計量分配し、基板から二酸化ケイ素を選択的に除去することを含み;
ケミカルメカニカルポリッシング組成物は、pH3〜5であり;ケミカルメカニカルポリッシング組成物は、少なくとも1,500Å/minの二酸化ケイ素の除去速度を示し;そして、ケミカルメカニカルポリッシング組成物がコロージョンインヒビターフリーである、方法。 - ケミカルメカニカルポリッシング組成物は、ケミカルメカニカルポリッシングパッドがポリマー中空コア微粒子を含有するポリウレタン研磨層およびポリウレタン含浸不織サブパッドを含む200mm研磨機で、プラテン速度1分当り93回転、キャリヤ速度1分当り87回転、ケミカルメカニカルポリッシング組成物流量200ml/min、および公称ダウンフォース3psiで、少なくとも1,500Å/minの二酸化ケイ素の除去速度を示す、請求項1の方法。
- 基板がさらにSi3N4を含み;ケミカルメカニカルポリッシング組成物は、ケミカルメカニカルポリッシングパッドがポリマー中空コア微粒子を含有するポリウレタン研磨層およびポリウレタン含浸不織サブパッドを含む200mm研磨機で、プラテン速度1分当り93回転、キャリヤ速度1分当り87回転、ケミカルメカニカルポリッシング組成物流量200ml/min、および公称ダウンフォース3psiで、少なくとも1,500Å/minの二酸化ケイ素の除去速度を示す、請求項1の方法。
- 用意する基板が、窒化ケイ素上に被着された二酸化ケイ素を含み;用意するケミカルメカニカルポリッシング組成物が、テトラエチルアンモニウムヒドロキシドおよびテトラブチルアンモニウムヒドロキシドから選択される第四級アルキルアンモニウム化合物0.005〜0.055重量%を含み;加えるダウンフォースが0.1〜3psiであり;用意するケミカルメカニカルポリッシング組成物がpH3〜4であり;二酸化ケイ素および窒化ケイ素を、ケミカルメカニカルポリッシング組成物にさらし;そして、ケミカルメカニカルポリッシング組成物が、二酸化ケイ素対窒化ケイ素の選択性少なくとも5対1を示す、請求項1の方法。
- ケミカルメカニカルポリッシング組成物は、ケミカルメカニカルポリッシングパッドがポリマー中空コア微粒子を含有するポリウレタン研磨層およびポリウレタン含浸不織サブパッドを含む200mm研磨機で、プラテン速度1分当り93回転、キャリヤ速度1分当り87回転、ケミカルメカニカルポリッシング組成物流量200ml/min、および公称ダウンフォース3psiで、少なくとも2,000Å/minの二酸化ケイ素の除去速度を示す、請求項4の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/432,021 | 2009-04-29 | ||
US12/432,021 US8119529B2 (en) | 2009-04-29 | 2009-04-29 | Method for chemical mechanical polishing a substrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010101763A Division JP2010267960A (ja) | 2009-04-29 | 2010-04-27 | 基板をケミカルメカニカルポリッシングする方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015188093A JP2015188093A (ja) | 2015-10-29 |
JP2015188093A5 JP2015188093A5 (ja) | 2016-01-28 |
JP6128161B2 true JP6128161B2 (ja) | 2017-05-17 |
Family
ID=42813883
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010101763A Pending JP2010267960A (ja) | 2009-04-29 | 2010-04-27 | 基板をケミカルメカニカルポリッシングする方法 |
JP2015098130A Active JP6128161B2 (ja) | 2009-04-29 | 2015-05-13 | 基板をケミカルメカニカルポリッシングする方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010101763A Pending JP2010267960A (ja) | 2009-04-29 | 2010-04-27 | 基板をケミカルメカニカルポリッシングする方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8119529B2 (ja) |
JP (2) | JP2010267960A (ja) |
KR (1) | KR101698008B1 (ja) |
CN (1) | CN101875182B (ja) |
DE (1) | DE102010018423B4 (ja) |
FR (1) | FR2944986B1 (ja) |
TW (1) | TWI506127B (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8491808B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride |
US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
US8496843B2 (en) * | 2010-03-16 | 2013-07-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
US8232208B2 (en) | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
US8568610B2 (en) | 2010-09-20 | 2013-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate |
US8865013B2 (en) * | 2011-08-15 | 2014-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing tungsten |
US8440094B1 (en) | 2011-10-27 | 2013-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate |
US8435420B1 (en) * | 2011-10-27 | 2013-05-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing using tunable polishing formulation |
US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9303189B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9238754B2 (en) | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9293339B1 (en) * | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
US9484212B1 (en) * | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
US9534148B1 (en) * | 2015-12-21 | 2017-01-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
US9803108B1 (en) | 2016-10-19 | 2017-10-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous compositions of stabilized aminosilane group containing silica particles |
US9783702B1 (en) * | 2016-10-19 | 2017-10-10 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Aqueous compositions of low abrasive silica particles |
JP2020203980A (ja) * | 2019-06-17 | 2020-12-24 | 日本キャボット・マイクロエレクトロニクス株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551168A (en) | 1966-08-01 | 1970-12-29 | Armour Ind Chem Co | Protective polish |
IL151977A0 (en) * | 2000-04-11 | 2003-04-10 | Cabot Microelectronics Corp | System for the preferential removal of silicon oxide |
US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
US20060189269A1 (en) * | 2005-02-18 | 2006-08-24 | Roy Pradip K | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7704125B2 (en) * | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
EP1566420A1 (en) * | 2004-01-23 | 2005-08-24 | JSR Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
US20060205218A1 (en) * | 2005-03-09 | 2006-09-14 | Mueller Brian L | Compositions and methods for chemical mechanical polishing thin films and dielectric materials |
US7731864B2 (en) * | 2005-06-29 | 2010-06-08 | Intel Corporation | Slurry for chemical mechanical polishing of aluminum |
US7842192B2 (en) | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
US20080220610A1 (en) | 2006-06-29 | 2008-09-11 | Cabot Microelectronics Corporation | Silicon oxide polishing method utilizing colloidal silica |
KR100827591B1 (ko) * | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
JP5322455B2 (ja) * | 2007-02-26 | 2013-10-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
JP5285866B2 (ja) * | 2007-03-26 | 2013-09-11 | 富士フイルム株式会社 | 研磨液 |
JP2009081200A (ja) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | 研磨液 |
-
2009
- 2009-04-29 US US12/432,021 patent/US8119529B2/en active Active
-
2010
- 2010-04-12 TW TW099111244A patent/TWI506127B/zh active
- 2010-04-23 KR KR1020100038080A patent/KR101698008B1/ko active IP Right Grant
- 2010-04-27 DE DE102010018423.3A patent/DE102010018423B4/de active Active
- 2010-04-27 JP JP2010101763A patent/JP2010267960A/ja active Pending
- 2010-04-28 CN CN2010101846936A patent/CN101875182B/zh active Active
- 2010-04-28 FR FR1053259A patent/FR2944986B1/fr active Active
-
2015
- 2015-05-13 JP JP2015098130A patent/JP6128161B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN101875182A (zh) | 2010-11-03 |
DE102010018423A1 (de) | 2010-11-04 |
CN101875182B (zh) | 2012-12-05 |
US20100279507A1 (en) | 2010-11-04 |
US8119529B2 (en) | 2012-02-21 |
KR20100118945A (ko) | 2010-11-08 |
JP2015188093A (ja) | 2015-10-29 |
KR101698008B1 (ko) | 2017-01-19 |
DE102010018423B4 (de) | 2021-06-17 |
FR2944986A1 (fr) | 2010-11-05 |
TWI506127B (zh) | 2015-11-01 |
TW201043685A (en) | 2010-12-16 |
FR2944986B1 (fr) | 2015-08-21 |
JP2010267960A (ja) | 2010-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6128161B2 (ja) | 基板をケミカルメカニカルポリッシングする方法 | |
JP5361306B2 (ja) | 化学機械研磨用水系分散体および化学機械研磨方法 | |
JP6137793B2 (ja) | タングステンをケミカルメカニカルポリッシングするための方法 | |
JP6595227B2 (ja) | ケミカルメカニカルポリッシング組成物及びタングステン研磨法 | |
US20050194563A1 (en) | Bicine/tricine containing composition and method for chemical-mechanical planarization | |
JP2007251141A (ja) | 多成分障壁研磨液 | |
KR101945221B1 (ko) | 구리의 화학 기계적 연마 방법 | |
EP2035523A1 (en) | Compositions and methods for polishing silicon nitride materials | |
JP3974127B2 (ja) | 半導体装置の製造方法 | |
JP6019523B2 (ja) | 安定化した濃縮可能なケミカルメカニカルポリッシング組成物および基板研磨方法 | |
TWI629324B (zh) | 研磨基板之方法 | |
JP5585220B2 (ja) | Cmp研磨液及びこのcmp研磨液を用いた研磨方法 | |
JP2018129508A (ja) | タングステンのための化学機械研磨法 | |
JP5843093B2 (ja) | 安定化されたケミカルメカニカルポリッシング組成物及び基板を研磨する方法 | |
JP6021584B2 (ja) | 調整可能な研磨配合物を用いて研磨する方法 | |
JP2019537246A (ja) | タングステンのための化学機械研磨法 | |
JP2018157195A (ja) | ポリグリコール及びポリグリコール誘導体を使用する、タングステンのための化学機械研磨法 | |
KR100725550B1 (ko) | 구리 배선 연마용 슬러리 조성물 및 이를 이용한 금속배선 연마 방법 | |
KR100565426B1 (ko) | 텅스텐 배선 연마용 cmp 슬러리 | |
TWI601198B (zh) | 化學機械研磨基板之方法 | |
TW202330818A (zh) | 提高多晶矽的移除速率之方法 | |
KR101279963B1 (ko) | 금속 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151207 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160617 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160628 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160927 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161115 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170214 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170314 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170327 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6128161 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |