JP2012094838A5 - - Google Patents
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- Publication number
- JP2012094838A5 JP2012094838A5 JP2011205547A JP2011205547A JP2012094838A5 JP 2012094838 A5 JP2012094838 A5 JP 2012094838A5 JP 2011205547 A JP2011205547 A JP 2011205547A JP 2011205547 A JP2011205547 A JP 2011205547A JP 2012094838 A5 JP2012094838 A5 JP 2012094838A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- chemical mechanical
- mechanical polishing
- formula
- slurry composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 25
- 239000000126 substance Substances 0.000 claims 24
- 239000002002 slurry Substances 0.000 claims 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 10
- 150000001450 anions Chemical class 0.000 claims 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 8
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims 7
- 239000008119 colloidal silica Substances 0.000 claims 6
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims 6
- 239000006061 abrasive grain Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 4
- 239000000908 ammonium hydroxide Substances 0.000 claims 4
- 229910017604 nitric acid Inorganic materials 0.000 claims 4
- 239000003002 pH adjusting agent Substances 0.000 claims 4
- 150000001768 cations Chemical class 0.000 claims 3
- 150000004820 halides Chemical class 0.000 claims 3
- 229920006395 saturated elastomer Polymers 0.000 claims 3
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims 2
- -1 halide anions Chemical class 0.000 claims 2
- 125000006732 (C1-C15) alkyl group Chemical group 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000003710 aryl alkyl group Chemical group 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 125000001188 haloalkyl group Chemical group 0.000 claims 1
- 125000003106 haloaryl group Chemical group 0.000 claims 1
- 125000002034 haloarylalkyl group Chemical group 0.000 claims 1
- 150000002366 halogen compounds Chemical class 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/887,963 US8513126B2 (en) | 2010-09-22 | 2010-09-22 | Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate |
| US12/887,963 | 2010-09-22 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012094838A JP2012094838A (ja) | 2012-05-17 |
| JP2012094838A5 true JP2012094838A5 (enExample) | 2014-10-23 |
| JP6002983B2 JP6002983B2 (ja) | 2016-10-05 |
Family
ID=45789377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011205547A Expired - Fee Related JP6002983B2 (ja) | 2010-09-22 | 2011-09-21 | 調整可能な絶縁体研磨選択比を有するスラリー組成物及び基板研磨方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8513126B2 (enExample) |
| JP (1) | JP6002983B2 (enExample) |
| KR (1) | KR101718814B1 (enExample) |
| CN (1) | CN102559063B (enExample) |
| DE (1) | DE102011113804A1 (enExample) |
| FR (1) | FR2964974B1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8232208B2 (en) | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
| US8545715B1 (en) | 2012-10-09 | 2013-10-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method |
| CN104650739A (zh) * | 2013-11-22 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种用于抛光二氧化硅基材的化学机械抛光液 |
| US10508221B2 (en) * | 2017-09-28 | 2019-12-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them |
| CN109149047A (zh) * | 2018-08-27 | 2019-01-04 | 中国科学院上海光学精密机械研究所 | 一种片上低损耗超细脊状波导的制备方法 |
| JP7408386B2 (ja) * | 2018-12-28 | 2024-01-05 | ニッタ・デュポン株式会社 | 研磨スラリー、及び、研磨スラリー用濃縮物 |
| JP2020203980A (ja) * | 2019-06-17 | 2020-12-24 | 日本キャボット・マイクロエレクトロニクス株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
| KR20220087492A (ko) * | 2019-10-22 | 2022-06-24 | 씨엠씨 머티리얼즈, 인코포레이티드 | 실리콘 산화물보다 실리콘 질화물 및 폴리실리콘에 대해 높은 선택성을 갖는 연마 조성물 및 방법 |
| WO2023186762A1 (en) | 2022-03-31 | 2023-10-05 | Basf Se | Compositions and methods for tungsten etching inhibition |
| TW202523817A (zh) | 2023-10-26 | 2025-06-16 | 德商巴斯夫歐洲公司 | 用於去除鎢和介電質層的組成物和方法 |
| WO2025088012A1 (en) | 2023-10-26 | 2025-05-01 | Basf Se | Compositions and methods for removal of tungsten and dielectric layers |
| WO2025219376A1 (en) | 2024-04-19 | 2025-10-23 | Basf Se | Compositions and methods for polishing dielectric |
| WO2025219374A1 (en) | 2024-04-19 | 2025-10-23 | Basf Se | Compositions and methods for polishing dielectric |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3490038B2 (ja) * | 1999-12-28 | 2004-01-26 | Ｎｅｃエレクトロニクス株式会社 | 金属配線形成方法 |
| DE10022649B4 (de) * | 2000-04-28 | 2008-06-19 | Qimonda Ag | Polierflüssigkeit und Verfahren zur Strukturierung von Metalloxiden |
| KR100378180B1 (ko) | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
| JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Ｎｅｃエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| US7018560B2 (en) | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US20070077865A1 (en) | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
| US7842192B2 (en) | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
| US20080220610A1 (en) | 2006-06-29 | 2008-09-11 | Cabot Microelectronics Corporation | Silicon oxide polishing method utilizing colloidal silica |
| JP5322455B2 (ja) * | 2007-02-26 | 2013-10-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JP5397218B2 (ja) * | 2007-02-27 | 2014-01-22 | 日立化成株式会社 | シリコン膜用ｃｍｐスラリー |
| JP5632378B2 (ja) * | 2008-09-26 | 2014-11-26 | ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ | 化学機械研磨用研磨剤組成物及びその使用法 |
| JP5383164B2 (ja) * | 2008-11-28 | 2014-01-08 | 富士フイルム株式会社 | 研磨液 |
-
2010
- 2010-09-22 US US12/887,963 patent/US8513126B2/en not_active Expired - Fee Related
-
2011
- 2011-09-20 DE DE102011113804A patent/DE102011113804A1/de not_active Withdrawn
- 2011-09-21 JP JP2011205547A patent/JP6002983B2/ja not_active Expired - Fee Related
- 2011-09-21 KR KR1020110095266A patent/KR101718814B1/ko not_active Expired - Fee Related
- 2011-09-22 FR FR1158436A patent/FR2964974B1/fr not_active Expired - Fee Related
- 2011-09-22 CN CN201110372479.8A patent/CN102559063B/zh not_active Expired - Fee Related
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