CN102559063B - 具有可调介电抛光选择性的浆料组合物及抛光基材的方法 - Google Patents

具有可调介电抛光选择性的浆料组合物及抛光基材的方法 Download PDF

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Publication number
CN102559063B
CN102559063B CN201110372479.8A CN201110372479A CN102559063B CN 102559063 B CN102559063 B CN 102559063B CN 201110372479 A CN201110372479 A CN 201110372479A CN 102559063 B CN102559063 B CN 102559063B
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China
Prior art keywords
chemical mechanical
mechanical polishing
formula
anion
slurry composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201110372479.8A
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English (en)
Chinese (zh)
Other versions
CN102559063A (zh
Inventor
刘振东
郭毅
K-A·K·雷迪
张广云
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ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Publication of CN102559063A publication Critical patent/CN102559063A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201110372479.8A 2010-09-22 2011-09-22 具有可调介电抛光选择性的浆料组合物及抛光基材的方法 Expired - Fee Related CN102559063B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/887,963 US8513126B2 (en) 2010-09-22 2010-09-22 Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate
US12/887,963 2010-09-22

Publications (2)

Publication Number Publication Date
CN102559063A CN102559063A (zh) 2012-07-11
CN102559063B true CN102559063B (zh) 2014-06-11

Family

ID=45789377

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110372479.8A Expired - Fee Related CN102559063B (zh) 2010-09-22 2011-09-22 具有可调介电抛光选择性的浆料组合物及抛光基材的方法

Country Status (6)

Country Link
US (1) US8513126B2 (enExample)
JP (1) JP6002983B2 (enExample)
KR (1) KR101718814B1 (enExample)
CN (1) CN102559063B (enExample)
DE (1) DE102011113804A1 (enExample)
FR (1) FR2964974B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232208B2 (en) 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8545715B1 (en) 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
CN104650739A (zh) * 2013-11-22 2015-05-27 安集微电子（上海）有限公司 一种用于抛光二氧化硅基材的化学机械抛光液
US10508221B2 (en) * 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
CN109149047A (zh) * 2018-08-27 2019-01-04 中国科学院上海光学精密机械研究所 一种片上低损耗超细脊状波导的制备方法
JP7408386B2 (ja) * 2018-12-28 2024-01-05 ニッタ・デュポン株式会社 研磨スラリー、及び、研磨スラリー用濃縮物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
KR20220087492A (ko) * 2019-10-22 2022-06-24 씨엠씨 머티리얼즈, 인코포레이티드 실리콘 산화물보다 실리콘 질화물 및 폴리실리콘에 대해 높은 선택성을 갖는 연마 조성물 및 방법
EP4499765A1 (en) 2022-03-31 2025-02-05 Basf Se Compositions and methods for tungsten etching inhibition
TW202523817A (zh) 2023-10-26 2025-06-16 德商巴斯夫歐洲公司 用於去除鎢和介電質層的組成物和方法
WO2025088012A1 (en) 2023-10-26 2025-05-01 Basf Se Compositions and methods for removal of tungsten and dielectric layers
WO2025219374A1 (en) 2024-04-19 2025-10-23 Basf Se Compositions and methods for polishing dielectric
WO2025219376A1 (en) 2024-04-19 2025-10-23 Basf Se Compositions and methods for polishing dielectric

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6436811B1 (en) * 1999-12-28 2002-08-20 Nec Corporation Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry
US6530968B2 (en) * 2000-11-24 2003-03-11 Nec Electronics Corporation Chemical mechanical polishing slurry
CN101255316A (zh) * 2007-02-26 2008-09-03 富士胶片株式会社 抛光液

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10022649B4 (de) * 2000-04-28 2008-06-19 Qimonda Ag Polierflüssigkeit und Verfahren zur Strukturierung von Metalloxiden
KR100378180B1 (ko) 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US7842192B2 (en) 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
US20080220610A1 (en) 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
JP5397218B2 (ja) * 2007-02-27 2014-01-22 日立化成株式会社 シリコン膜用ｃｍｐスラリー
WO2010036358A1 (en) * 2008-09-26 2010-04-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
JP5383164B2 (ja) * 2008-11-28 2014-01-08 富士フイルム株式会社 研磨液

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6436811B1 (en) * 1999-12-28 2002-08-20 Nec Corporation Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry
US6530968B2 (en) * 2000-11-24 2003-03-11 Nec Electronics Corporation Chemical mechanical polishing slurry
CN101255316A (zh) * 2007-02-26 2008-09-03 富士胶片株式会社 抛光液

Also Published As

Publication number Publication date
FR2964974B1 (fr) 2017-12-08
CN102559063A (zh) 2012-07-11
JP2012094838A (ja) 2012-05-17
FR2964974A1 (fr) 2012-03-23
US20120070990A1 (en) 2012-03-22
KR20120031148A (ko) 2012-03-30
KR101718814B1 (ko) 2017-04-04
US8513126B2 (en) 2013-08-20
JP6002983B2 (ja) 2016-10-05
DE102011113804A1 (de) 2012-04-12

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Granted publication date: 20140611

Termination date: 20200922