JP2019522896A5 - - Google Patents
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- Publication number
- JP2019522896A5 JP2019522896A5 JP2018560761A JP2018560761A JP2019522896A5 JP 2019522896 A5 JP2019522896 A5 JP 2019522896A5 JP 2018560761 A JP2018560761 A JP 2018560761A JP 2018560761 A JP2018560761 A JP 2018560761A JP 2019522896 A5 JP2019522896 A5 JP 2019522896A5
- Authority
- JP
- Japan
- Prior art keywords
- slurry composition
- aluminum
- weight
- mechanical polishing
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims description 50
- 239000002002 slurry Substances 0.000 claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 25
- 238000005498 polishing Methods 0.000 claims description 25
- 125000005372 silanol group Chemical group 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000003002 pH adjusting agent Substances 0.000 claims description 9
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 8
- -1 aluminum ions Chemical class 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- 230000003115 biocidal effect Effects 0.000 claims description 3
- 239000003139 biocide Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- GURLNXRFQUUOMW-UHFFFAOYSA-K [Al](Cl)(Cl)Cl.[AlH3] Chemical compound [Al](Cl)(Cl)Cl.[AlH3] GURLNXRFQUUOMW-UHFFFAOYSA-K 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 claims description 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 4
- 229910000519 Ferrosilicon Inorganic materials 0.000 claims 1
- 239000008119 colloidal silica Substances 0.000 claims 1
- 229910021485 fumed silica Inorganic materials 0.000 claims 1
- 150000002506 iron compounds Chemical class 0.000 claims 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 7
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 6
- GRLPQNLYRHEGIJ-UHFFFAOYSA-J potassium aluminium sulfate Chemical compound [Al+3].[K+].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O GRLPQNLYRHEGIJ-UHFFFAOYSA-J 0.000 description 4
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229940103272 aluminum potassium sulfate Drugs 0.000 description 2
- LCQXXBOSCBRNNT-UHFFFAOYSA-K ammonium aluminium sulfate Chemical compound [NH4+].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O LCQXXBOSCBRNNT-UHFFFAOYSA-K 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- HSEYYGFJBLWFGD-UHFFFAOYSA-N 4-methylsulfanyl-2-[(2-methylsulfanylpyridine-3-carbonyl)amino]butanoic acid Chemical compound CSCCC(C(O)=O)NC(=O)C1=CC=CN=C1SC HSEYYGFJBLWFGD-UHFFFAOYSA-N 0.000 description 1
- 229910018626 Al(OH) Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20160061230 | 2016-05-19 | ||
| KR10-2016-0061230 | 2016-05-19 | ||
| PCT/KR2017/005118 WO2017200297A1 (ko) | 2016-05-19 | 2017-05-17 | 화학-기계적 연마용 슬러리 조성물 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019522896A JP2019522896A (ja) | 2019-08-15 |
| JP2019522896A5 true JP2019522896A5 (enExample) | 2020-06-18 |
| JP7032327B2 JP7032327B2 (ja) | 2022-03-08 |
Family
ID=60325360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018560761A Active JP7032327B2 (ja) | 2016-05-19 | 2017-05-17 | 化学－機械的研磨用スラリー組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11001732B2 (enExample) |
| JP (1) | JP7032327B2 (enExample) |
| KR (1) | KR102450333B1 (enExample) |
| CN (1) | CN109153889B (enExample) |
| TW (1) | TWI736623B (enExample) |
| WO (1) | WO2017200297A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019189610A1 (ja) * | 2018-03-30 | 2019-10-03 | 日揮触媒化成株式会社 | シリカ粒子分散液、研磨組成物及びシリカ粒子分散液の製造方法 |
| KR102709495B1 (ko) * | 2018-12-31 | 2024-09-25 | 주식회사 동진쎄미켐 | 화학-기계적 연마 입자 및 이를 포함하는 연마 슬러리 조성물 |
| CN118439623A (zh) * | 2019-02-21 | 2024-08-06 | 三菱化学株式会社 | 二氧化硅粒子及其制造方法、硅烷醇基的测定方法、研磨组合物、研磨方法、半导体晶片的制造方法和半导体器件的制造方法 |
| JP7576023B2 (ja) * | 2019-03-27 | 2024-10-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法および基板の製造方法 |
| JP7356865B2 (ja) * | 2019-10-30 | 2023-10-05 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法 |
| JP7356864B2 (ja) * | 2019-10-30 | 2023-10-05 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法 |
| JP7716857B2 (ja) * | 2020-03-23 | 2025-08-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP7663369B2 (ja) * | 2020-03-30 | 2025-04-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US11421132B2 (en) * | 2020-03-30 | 2022-08-23 | Fujimi Incorporated | Polishing composition |
| US11180679B1 (en) | 2020-05-27 | 2021-11-23 | Skc Solmics Co., Ltd. | Composition for semiconductor processing and method for polishing substrate using the same |
| WO2023007722A1 (ja) * | 2021-07-30 | 2023-02-02 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
Family Cites Families (34)
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|---|---|---|---|---|
| US3922393A (en) * | 1974-07-02 | 1975-11-25 | Du Pont | Process for polishing silicon and germanium semiconductor materials |
| JPS6086186A (ja) * | 1983-10-17 | 1985-05-15 | Toshiba Ceramics Co Ltd | 半導体ウエ−ハ研摩材 |
| US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| JPH0781132B2 (ja) * | 1990-08-29 | 1995-08-30 | 株式会社フジミインコーポレーテッド | 研磨剤組成物 |
| JPH1121545A (ja) * | 1997-06-30 | 1999-01-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
| US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
| US20020039839A1 (en) * | 1999-12-14 | 2002-04-04 | Thomas Terence M. | Polishing compositions for noble metals |
| CA2607856C (en) * | 2000-05-12 | 2009-10-20 | Nissan Chemical Industries, Ltd. | Polishing composition |
| JP2003197573A (ja) * | 2001-12-26 | 2003-07-11 | Ekc Technology Kk | メタル膜絶縁膜共存表面研磨用コロイダルシリカ |
| US6893476B2 (en) * | 2002-12-09 | 2005-05-17 | Dupont Air Products Nanomaterials Llc | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal |
| TW200516122A (en) * | 2003-06-27 | 2005-05-16 | Showa Denko Kk | Polishing composition and method for polishing substrate using the composition |
| US20050104048A1 (en) | 2003-11-13 | 2005-05-19 | Thomas Terence M. | Compositions and methods for polishing copper |
| US8038752B2 (en) * | 2004-10-27 | 2011-10-18 | Cabot Microelectronics Corporation | Metal ion-containing CMP composition and method for using the same |
| JP2006231436A (ja) * | 2005-02-23 | 2006-09-07 | Tokyo Seimitsu Co Ltd | 研磨用スラリーおよび研磨方法 |
| JP2007207908A (ja) * | 2006-01-31 | 2007-08-16 | Fujifilm Corp | バリア層用研磨液 |
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| JP2008288537A (ja) * | 2007-05-21 | 2008-11-27 | Fujifilm Corp | 金属用研磨液及び化学的機械的研磨方法 |
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| JP2009289887A (ja) * | 2008-05-28 | 2009-12-10 | Fujifilm Corp | 金属用研磨液、化学的機械的研磨方法、および新規化合物 |
| KR100928456B1 (ko) * | 2009-06-01 | 2009-11-25 | 주식회사 동진쎄미켐 | 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법 |
| US8697576B2 (en) * | 2009-09-16 | 2014-04-15 | Cabot Microelectronics Corporation | Composition and method for polishing polysilicon |
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| JP6291026B2 (ja) | 2013-03-15 | 2018-03-14 | エコラボ ユーエスエー インコーポレイティド | サファイアの表面を研磨する方法 |
| WO2015060610A1 (ko) * | 2013-10-23 | 2015-04-30 | 주식회사 동진쎄미켐 | 금속막 연마 슬러리 조성물 및 이를 이용한 금속막 연마 시 발생하는 스크래치의 감소 방법 |
| CN104650739A (zh) * | 2013-11-22 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种用于抛光二氧化硅基材的化学机械抛光液 |
| JP6482234B2 (ja) | 2014-10-22 | 2019-03-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN104588568B (zh) * | 2014-11-21 | 2016-07-27 | 广东惠和硅制品有限公司 | 一种铝改性硅溶胶的制备方法 |
| US9803109B2 (en) * | 2015-02-03 | 2017-10-31 | Cabot Microelectronics Corporation | CMP composition for silicon nitride removal |
-
2017
- 2017-05-17 KR KR1020170061076A patent/KR102450333B1/ko active Active
- 2017-05-17 CN CN201780030849.5A patent/CN109153889B/zh active Active
- 2017-05-17 JP JP2018560761A patent/JP7032327B2/ja active Active
- 2017-05-17 WO PCT/KR2017/005118 patent/WO2017200297A1/ko not_active Ceased
- 2017-05-19 TW TW106116625A patent/TWI736623B/zh active
-
2018
- 2018-11-13 US US16/189,236 patent/US11001732B2/en active Active
- 2018-11-13 US US16/189,207 patent/US20190077993A1/en not_active Abandoned
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