JP2019163457A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019163457A5 JP2019163457A5 JP2019044731A JP2019044731A JP2019163457A5 JP 2019163457 A5 JP2019163457 A5 JP 2019163457A5 JP 2019044731 A JP2019044731 A JP 2019044731A JP 2019044731 A JP2019044731 A JP 2019044731A JP 2019163457 A5 JP2019163457 A5 JP 2019163457A5
- Authority
- JP
- Japan
- Prior art keywords
- mechanical polishing
- chemical mechanical
- weight
- formula
- polishing composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 18
- 239000000126 substance Substances 0.000 claims 18
- 239000000203 mixture Chemical class 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 9
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000006061 abrasive grain Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 229910052783 alkali metal Inorganic materials 0.000 claims 5
- 150000001340 alkali metals Chemical class 0.000 claims 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 3
- 150000001450 anions Chemical class 0.000 claims 3
- 150000004820 halides Chemical class 0.000 claims 3
- 229910017604 nitric acid Inorganic materials 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical class [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 2
- 150000003863 ammonium salts Chemical class 0.000 claims 2
- 229910017053 inorganic salt Inorganic materials 0.000 claims 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 claims 1
- 229920000388 Polyphosphate Polymers 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- -1 acetate anions Chemical class 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000002947 alkylene group Chemical group 0.000 claims 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims 1
- 239000008119 colloidal silica Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims 1
- 235000011180 diphosphates Nutrition 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 150000004679 hydroxides Chemical class 0.000 claims 1
- 239000004615 ingredient Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 235000011007 phosphoric acid Nutrition 0.000 claims 1
- 239000001205 polyphosphate Substances 0.000 claims 1
- 235000011176 polyphosphates Nutrition 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 239000001226 triphosphate Substances 0.000 claims 1
- 235000011178 triphosphate Nutrition 0.000 claims 1
- UNXRWKVEANCORM-UHFFFAOYSA-N triphosphoric acid Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(O)=O UNXRWKVEANCORM-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/922,054 | 2018-03-15 | ||
| US15/922,054 US10683439B2 (en) | 2018-03-15 | 2018-03-15 | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019163457A JP2019163457A (ja) | 2019-09-26 |
| JP2019163457A5 true JP2019163457A5 (enExample) | 2022-03-07 |
| JP7359554B2 JP7359554B2 (ja) | 2023-10-11 |
Family
ID=67905197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019044731A Active JP7359554B2 (ja) | 2018-03-15 | 2019-03-12 | 欠陥抑制を向上させた研磨組成物及び基板の研磨方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10683439B2 (enExample) |
| JP (1) | JP7359554B2 (enExample) |
| KR (1) | KR102762648B1 (enExample) |
| CN (1) | CN110283532B (enExample) |
| TW (1) | TWI820091B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12291655B2 (en) * | 2021-04-27 | 2025-05-06 | DuPont Electronic Materials Holding, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
| US11274230B1 (en) * | 2021-04-27 | 2022-03-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5139571A (en) | 1991-04-24 | 1992-08-18 | Motorola, Inc. | Non-contaminating wafer polishing slurry |
| KR100822236B1 (ko) * | 2000-11-30 | 2008-04-16 | 토소가부시키가이샤 | 레지스트 박리제 |
| JP3440419B2 (ja) | 2001-02-02 | 2003-08-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| TW200424299A (en) | 2002-12-26 | 2004-11-16 | Kao Corp | Polishing composition |
| JP2004247542A (ja) * | 2003-02-14 | 2004-09-02 | Kao Corp | 精密部品用基板の製造方法 |
| JP4608856B2 (ja) * | 2003-07-24 | 2011-01-12 | 信越半導体株式会社 | ウエーハの研磨方法 |
| US7018560B2 (en) | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7300480B2 (en) | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
| JP4974447B2 (ja) | 2003-11-26 | 2012-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| JP2005268665A (ja) | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| US7446046B2 (en) | 2005-01-06 | 2008-11-04 | Intel Corporation | Selective polish for fabricating electronic devices |
| KR101134590B1 (ko) * | 2005-03-28 | 2012-04-09 | 삼성코닝정밀소재 주식회사 | 분산 안정성이 우수한 연마 슬러리의 제조방법 |
| US7452481B2 (en) * | 2005-05-16 | 2008-11-18 | Kabushiki Kaisha Kobe Seiko Sho | Polishing slurry and method of reclaiming wafers |
| KR101395542B1 (ko) | 2006-05-02 | 2014-05-14 | 캐보트 마이크로일렉트로닉스 코포레이션 | 반도체 물질의 cmp를 위한 조성물 및 방법 |
| US20080020680A1 (en) * | 2006-07-24 | 2008-01-24 | Cabot Microelectronics Corporation | Rate-enhanced CMP compositions for dielectric films |
| TW200817497A (en) * | 2006-08-14 | 2008-04-16 | Nippon Chemical Ind | Polishing composition for semiconductor wafer, production method thereof, and polishing method |
| US8026201B2 (en) * | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
| JP5275595B2 (ja) * | 2007-08-29 | 2013-08-28 | 日本化学工業株式会社 | 半導体ウエハ研磨用組成物および研磨方法 |
| US8431490B2 (en) * | 2010-03-31 | 2013-04-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
| JP6250454B2 (ja) * | 2014-03-27 | 2017-12-20 | 株式会社フジミインコーポレーテッド | シリコン材料研磨用組成物 |
| US9305794B2 (en) * | 2014-04-07 | 2016-04-05 | Macronix International Co., Ltd. | Etching method and etching composition |
| JP6174625B2 (ja) * | 2015-05-22 | 2017-08-02 | 株式会社フジミインコーポレーテッド | 研磨方法及び組成調整剤 |
-
2018
- 2018-03-15 US US15/922,054 patent/US10683439B2/en active Active
-
2019
- 2019-03-05 TW TW108107203A patent/TWI820091B/zh active
- 2019-03-12 JP JP2019044731A patent/JP7359554B2/ja active Active
- 2019-03-13 CN CN201910191269.5A patent/CN110283532B/zh active Active
- 2019-03-13 KR KR1020190028590A patent/KR102762648B1/ko active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6482234B2 (ja) | 研磨用組成物 | |
| JP2012094838A5 (enExample) | ||
| JP6673954B2 (ja) | 元素状ケイ素を含む膜の化学機械平坦化 | |
| JP6829191B2 (ja) | 研磨方法 | |
| JP6756460B2 (ja) | 研磨方法及びセラミック製部品の製造方法 | |
| JP6250454B2 (ja) | シリコン材料研磨用組成物 | |
| JP2019522896A5 (enExample) | ||
| US20170348820A1 (en) | Chemical-mechanical processing slurry and methods for processing a nickel substrate surface | |
| TW201708492A (zh) | 研磨用組成物及矽基板之研磨方法 | |
| JP2019163457A5 (enExample) | ||
| JP2015063687A5 (enExample) | ||
| WO2019017407A1 (ja) | 基板の研磨方法および研磨用組成物セット | |
| JP7713928B2 (ja) | 研磨用組成物および研磨方法 | |
| JP7253335B2 (ja) | 研磨用組成物、その製造方法および研磨用組成物を用いた研磨方法 | |
| JP2987171B2 (ja) | ウエハーのファイン研磨用濃縮組成物 | |
| JP7359554B2 (ja) | 欠陥抑制を向上させた研磨組成物及び基板の研磨方法 | |
| JP6302335B2 (ja) | 安定した、濃縮可能なシリコンウェーハ研磨組成物及び関連する方法 | |
| JP7319190B2 (ja) | 研磨用組成物 | |
| JP2022169478A5 (enExample) | ||
| JP6829192B2 (ja) | 研磨方法 | |
| JP2014207449A5 (ja) | 安定した、濃縮可能なシリコンウェーハ研磨組成物及び関連する方法 | |
| JP7512036B2 (ja) | 研磨用組成物 | |
| TW201816061A (zh) | 研磨用組合物與使用該組合物之研磨方法以及半導體基板之製造方法 | |
| JP6389054B2 (ja) | シリコンウェーハ研磨組成物及び関連する方法 | |
| JP7745391B2 (ja) | 研磨用組成物、研磨用組成物の製造方法、研磨方法、半導体基板の製造方法 |