JP7359554B2 - 欠陥抑制を向上させた研磨組成物及び基板の研磨方法 - Google Patents

欠陥抑制を向上させた研磨組成物及び基板の研磨方法 Download PDF

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Publication number
JP7359554B2
JP7359554B2 JP2019044731A JP2019044731A JP7359554B2 JP 7359554 B2 JP7359554 B2 JP 7359554B2 JP 2019044731 A JP2019044731 A JP 2019044731A JP 2019044731 A JP2019044731 A JP 2019044731A JP 7359554 B2 JP7359554 B2 JP 7359554B2
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Prior art keywords
mechanical polishing
formula
chemical mechanical
substrate
polishing composition
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JP2019044731A
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English (en)
Japanese (ja)
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JP2019163457A (ja
JP2019163457A5 (enExample
Inventor
イ・グオ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2019044731A 2018-03-15 2019-03-12 欠陥抑制を向上させた研磨組成物及び基板の研磨方法 Active JP7359554B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/922,054 US10683439B2 (en) 2018-03-15 2018-03-15 Polishing composition and method of polishing a substrate having enhanced defect inhibition
US15/922,054 2018-03-15

Publications (3)

Publication Number Publication Date
JP2019163457A JP2019163457A (ja) 2019-09-26
JP2019163457A5 JP2019163457A5 (enExample) 2022-03-07
JP7359554B2 true JP7359554B2 (ja) 2023-10-11

Family

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Family Applications (1)

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JP2019044731A Active JP7359554B2 (ja) 2018-03-15 2019-03-12 欠陥抑制を向上させた研磨組成物及び基板の研磨方法

Country Status (5)

Country Link
US (1) US10683439B2 (enExample)
JP (1) JP7359554B2 (enExample)
KR (1) KR102762648B1 (enExample)
CN (1) CN110283532B (enExample)
TW (1) TWI820091B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction
US11274230B1 (en) * 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247542A (ja) 2003-02-14 2004-09-02 Kao Corp 精密部品用基板の製造方法
JP2005045102A (ja) 2003-07-24 2005-02-17 Shin Etsu Handotai Co Ltd ウエーハの研磨方法
JP2006324639A (ja) 2005-05-16 2006-11-30 Kobe Steel Ltd 研磨スラリーおよびウエハ再生方法
JP2009054935A (ja) 2007-08-29 2009-03-12 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物および研磨方法
JP2011216873A (ja) 2010-03-31 2011-10-27 Rohm & Haas Electronic Materials Cmp Holdings Inc 酸化ケイ素除去を増大させるように適合した研磨組成物で基体を化学機械研磨する方法
JP2015191966A (ja) 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物
JP2016215336A (ja) 2015-05-22 2016-12-22 株式会社フジミインコーポレーテッド 研磨方法及び組成調整剤

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US5139571A (en) 1991-04-24 1992-08-18 Motorola, Inc. Non-contaminating wafer polishing slurry
EP1211563B1 (en) * 2000-11-30 2011-12-21 Tosoh Corporation Resist stripper composition
JP3440419B2 (ja) 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
TW200424299A (en) 2002-12-26 2004-11-16 Kao Corp Polishing composition
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
JP4974447B2 (ja) 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP2005268665A (ja) 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US7446046B2 (en) 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
KR101134590B1 (ko) * 2005-03-28 2012-04-09 삼성코닝정밀소재 주식회사 분산 안정성이 우수한 연마 슬러리의 제조방법
US20090156006A1 (en) 2006-05-02 2009-06-18 Sriram Anjur Compositions and methods for cmp of semiconductor materials
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
US9305794B2 (en) * 2014-04-07 2016-04-05 Macronix International Co., Ltd. Etching method and etching composition

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247542A (ja) 2003-02-14 2004-09-02 Kao Corp 精密部品用基板の製造方法
JP2005045102A (ja) 2003-07-24 2005-02-17 Shin Etsu Handotai Co Ltd ウエーハの研磨方法
US20060246724A1 (en) 2003-07-24 2006-11-02 Naoyuki Takamatsu Method for polishing wafer
JP2006324639A (ja) 2005-05-16 2006-11-30 Kobe Steel Ltd 研磨スラリーおよびウエハ再生方法
JP2009054935A (ja) 2007-08-29 2009-03-12 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物および研磨方法
JP2011216873A (ja) 2010-03-31 2011-10-27 Rohm & Haas Electronic Materials Cmp Holdings Inc 酸化ケイ素除去を増大させるように適合した研磨組成物で基体を化学機械研磨する方法
JP2015191966A (ja) 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物
JP2016215336A (ja) 2015-05-22 2016-12-22 株式会社フジミインコーポレーテッド 研磨方法及び組成調整剤

Also Published As

Publication number Publication date
TW201938749A (zh) 2019-10-01
KR102762648B1 (ko) 2025-02-04
TWI820091B (zh) 2023-11-01
US20190284435A1 (en) 2019-09-19
CN110283532B (zh) 2021-06-22
CN110283532A (zh) 2019-09-27
US10683439B2 (en) 2020-06-16
JP2019163457A (ja) 2019-09-26
KR20190109265A (ko) 2019-09-25

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