CN110283532B - 具有增强缺陷抑制的抛光组合物和抛光衬底方法 - Google Patents

具有增强缺陷抑制的抛光组合物和抛光衬底方法 Download PDF

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Publication number
CN110283532B
CN110283532B CN201910191269.5A CN201910191269A CN110283532B CN 110283532 B CN110283532 B CN 110283532B CN 201910191269 A CN201910191269 A CN 201910191269A CN 110283532 B CN110283532 B CN 110283532B
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China
Prior art keywords
mechanical polishing
chemical mechanical
formula
polishing composition
weight
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Application number
CN201910191269.5A
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English (en)
Chinese (zh)
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CN110283532A (zh
Inventor
郭毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
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Publication of CN110283532A publication Critical patent/CN110283532A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201910191269.5A 2018-03-15 2019-03-13 具有增强缺陷抑制的抛光组合物和抛光衬底方法 Active CN110283532B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/922,054 US10683439B2 (en) 2018-03-15 2018-03-15 Polishing composition and method of polishing a substrate having enhanced defect inhibition
US15/922054 2018-03-15

Publications (2)

Publication Number Publication Date
CN110283532A CN110283532A (zh) 2019-09-27
CN110283532B true CN110283532B (zh) 2021-06-22

Family

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CN201910191269.5A Active CN110283532B (zh) 2018-03-15 2019-03-13 具有增强缺陷抑制的抛光组合物和抛光衬底方法

Country Status (5)

Country Link
US (1) US10683439B2 (enExample)
JP (1) JP7359554B2 (enExample)
KR (1) KR102762648B1 (enExample)
CN (1) CN110283532B (enExample)
TW (1) TWI820091B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction
US11274230B1 (en) * 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102206465A (zh) * 2010-03-31 2011-10-05 罗门哈斯电子材料Cmp控股股份有限公司 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法
CN103937411A (zh) * 2006-07-24 2014-07-23 卡伯特微电子公司 用于介电膜的提高速率的化学机械抛光组合物

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US5139571A (en) 1991-04-24 1992-08-18 Motorola, Inc. Non-contaminating wafer polishing slurry
EP1211563B1 (en) * 2000-11-30 2011-12-21 Tosoh Corporation Resist stripper composition
JP3440419B2 (ja) 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
TW200424299A (en) 2002-12-26 2004-11-16 Kao Corp Polishing composition
JP2004247542A (ja) * 2003-02-14 2004-09-02 Kao Corp 精密部品用基板の製造方法
JP4608856B2 (ja) * 2003-07-24 2011-01-12 信越半導体株式会社 ウエーハの研磨方法
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
JP4974447B2 (ja) 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP2005268665A (ja) 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US7446046B2 (en) 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
US20060213126A1 (en) * 2005-03-28 2006-09-28 Cho Yun J Method for preparing a polishing slurry having high dispersion stability
US7452481B2 (en) * 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
WO2007130350A1 (en) 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
JP5275595B2 (ja) * 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
JP6250454B2 (ja) * 2014-03-27 2017-12-20 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物
US9305794B2 (en) * 2014-04-07 2016-04-05 Macronix International Co., Ltd. Etching method and etching composition
JP6174625B2 (ja) * 2015-05-22 2017-08-02 株式会社フジミインコーポレーテッド 研磨方法及び組成調整剤

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103937411A (zh) * 2006-07-24 2014-07-23 卡伯特微电子公司 用于介电膜的提高速率的化学机械抛光组合物
CN102206465A (zh) * 2010-03-31 2011-10-05 罗门哈斯电子材料Cmp控股股份有限公司 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法

Also Published As

Publication number Publication date
JP7359554B2 (ja) 2023-10-11
KR20190109265A (ko) 2019-09-25
US20190284435A1 (en) 2019-09-19
KR102762648B1 (ko) 2025-02-04
JP2019163457A (ja) 2019-09-26
TW201938749A (zh) 2019-10-01
TWI820091B (zh) 2023-11-01
CN110283532A (zh) 2019-09-27
US10683439B2 (en) 2020-06-16

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Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

Country or region after: U.S.A.

Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

Country or region before: U.S.A.

CP03 Change of name, title or address