WO2015060610A1 - 금속막 연마 슬러리 조성물 및 이를 이용한 금속막 연마 시 발생하는 스크래치의 감소 방법 - Google Patents
금속막 연마 슬러리 조성물 및 이를 이용한 금속막 연마 시 발생하는 스크래치의 감소 방법 Download PDFInfo
- Publication number
- WO2015060610A1 WO2015060610A1 PCT/KR2014/009871 KR2014009871W WO2015060610A1 WO 2015060610 A1 WO2015060610 A1 WO 2015060610A1 KR 2014009871 W KR2014009871 W KR 2014009871W WO 2015060610 A1 WO2015060610 A1 WO 2015060610A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal film
- organic solvent
- slurry composition
- polishing
- group
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 120
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 82
- 239000002184 metal Substances 0.000 title claims abstract description 82
- 239000000203 mixture Substances 0.000 title claims abstract description 81
- 239000002002 slurry Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000001603 reducing effect Effects 0.000 title claims abstract description 19
- 239000003960 organic solvent Substances 0.000 claims abstract description 79
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 72
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 31
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- -1 amide compound Chemical class 0.000 claims description 17
- 239000003054 catalyst Substances 0.000 claims description 17
- 239000007800 oxidant agent Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000003002 pH adjusting agent Substances 0.000 claims description 8
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 150000002466 imines Chemical class 0.000 claims description 6
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 claims description 6
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 4
- CLZGJKHEVKJLLS-UHFFFAOYSA-N n,n-diheptylheptan-1-amine Chemical compound CCCCCCCN(CCCCCCC)CCCCCCC CLZGJKHEVKJLLS-UHFFFAOYSA-N 0.000 claims description 3
- DIAIBWNEUYXDNL-UHFFFAOYSA-N n,n-dihexylhexan-1-amine Chemical compound CCCCCCN(CCCCCC)CCCCCC DIAIBWNEUYXDNL-UHFFFAOYSA-N 0.000 claims description 3
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 claims description 3
- OOHAUGDGCWURIT-UHFFFAOYSA-N n,n-dipentylpentan-1-amine Chemical compound CCCCCN(CCCCC)CCCCC OOHAUGDGCWURIT-UHFFFAOYSA-N 0.000 claims description 3
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 claims description 3
- 229960002317 succinimide Drugs 0.000 claims description 3
- 229940124530 sulfonamide Drugs 0.000 claims description 3
- 150000003456 sulfonamides Chemical class 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- ABVVEAHYODGCLZ-UHFFFAOYSA-N tridecan-1-amine Chemical compound CCCCCCCCCCCCCN ABVVEAHYODGCLZ-UHFFFAOYSA-N 0.000 claims description 3
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 claims description 3
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- PYLLWONICXJARP-UHFFFAOYSA-N manganese silicon Chemical compound [Si].[Mn] PYLLWONICXJARP-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 claims description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 229910021350 transition metal silicide Inorganic materials 0.000 claims description 2
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 229940045713 antineoplastic alkylating drug ethylene imines Drugs 0.000 claims 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical class C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 1
- 239000004327 boric acid Substances 0.000 claims 1
- ZFKJEFZCWXFYMF-UHFFFAOYSA-N ethene;isoindole-1,3-dione Chemical group C=C.C1=CC=C2C(=O)NC(=O)C2=C1 ZFKJEFZCWXFYMF-UHFFFAOYSA-N 0.000 claims 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 20
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 229910000519 Ferrosilicon Inorganic materials 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000009835 boiling Methods 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229940093476 ethylene glycol Drugs 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- WNZQDUSMALZDQF-UHFFFAOYSA-N 2-benzofuran-1(3H)-one Chemical compound C1=CC=C2C(=O)OCC2=C1 WNZQDUSMALZDQF-UHFFFAOYSA-N 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 1
- KZEVSDGEBAJOTK-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[5-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CC=1OC(=NN=1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O KZEVSDGEBAJOTK-UHFFFAOYSA-N 0.000 description 1
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- VWVRASTUFJRTHW-UHFFFAOYSA-N 2-[3-(azetidin-3-yloxy)-4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound O=C(CN1C=C(C(OC2CNC2)=N1)C1=CN=C(NC2CC3=C(C2)C=CC=C3)N=C1)N1CCC2=C(C1)N=NN2 VWVRASTUFJRTHW-UHFFFAOYSA-N 0.000 description 1
- LPZOCVVDSHQFST-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-ethylpyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CC LPZOCVVDSHQFST-UHFFFAOYSA-N 0.000 description 1
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 1
- JVKRKMWZYMKVTQ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JVKRKMWZYMKVTQ-UHFFFAOYSA-N 0.000 description 1
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000011943 nanocatalyst Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229940086542 triethylamine Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Definitions
- the present invention relates to a metal film polishing slurry composition, and more particularly, in the manufacture of a semiconductor integrated circuit, a temperature rising during polishing of a metal film is lowered by reducing frictional force, and the thermal stability of the slurry is improved, thereby increasing the temperature.
- the present invention relates to a metal film polishing slurry composition for reducing scratches by suppressing an increase in particle size of a slurry, and a method for reducing scratches generated during metal film polishing using the same.
- a semiconductor chip to which integrated circuit technology is applied includes a large number of functional elements (elements) such as transistors, capacitors, and resistors, and these individual functional elements are connected to each other by wires drawn in a certain shape to form a circuit.
- Integrated circuits have been miniaturized with each generation, and as a result, the functions of a single chip are gradually increasing. In miniaturization of semiconductor chips, there is a limit to simply reducing the size of elements.
- Recently, studies on multilayer wiring structures in which each element is formed in multiple layers have been actively conducted. As described above, in order to manufacture a semiconductor device having a multilayer wiring structure, a process of polishing and planarizing a metal film must be performed.
- the metal film has high strength and is not easily polished, in order to effectively polish the metal film, the metal film needs to be oxidized to a relatively low strength metal oxide, followed by polishing.
- silicon In the process of polishing the metal film, silicon It is necessary to suppress the damage (scratch generation etc.) of insulating films, such as an oxide film.
- 10-2012-124395 discloses an aqueous electrolyte solution containing citric acid and ammonium bifluoride, and the present invention is different from the method of removing the metal surface, catalyst, oxidizing agent and dispersant, It is characterized by etching with an electrolyte solution rather than polishing.
- Japanese Patent Laid-Open No. 2000-254867 discloses a polishing sheet in which at least two components of a mixed solvent having different boiling points are included. The purpose of the present invention and the types of solvents are different from each other, and the content of the solvents is different. It is characterized in that the polishing sheet is not a slurry.
- An object of the present invention is to reduce the temperature rising during polishing of a metal film by reducing friction, and to improve the thermal stability of the slurry composition to reduce scratches generated during polishing of the metal film and the metal using the same. It is to provide a method of reducing scratches generated during film polishing.
- the present invention comprises the steps of contacting the metal film polishing slurry composition comprising an organic solvent containing a nitrogen atom and a glycol-based organic solvent with a substrate on which the metal film is formed; And contacting the polishing pad with the substrate and moving the polishing pad relative to the substrate to remove at least a portion of the metal film from the substrate.
- the present invention 0.001 to 10% by weight of the abrasive; 0.00001 to 0.1 weight percent catalyst; 0.1 to 10% by weight of oxidizing agent; Organic solvent containing 0.1 to 10% by weight of nitrogen atoms; 0.1-50% by weight of a glycol organic solvent; And the remaining water, wherein the mixing ratio of the organic solvent and the glycol-based organic solvent containing the nitrogen atom provides a metal film polishing slurry composition having a weight ratio of 1: 1 to 1: 500.
- Metal film polishing slurry composition according to the present invention and a method of reducing scratches when metal film polishing using the same, by using two or more types of organic solvents contained in the metal film polishing slurry composition can improve the stability of the abrasive In the process of chemical mechanical polishing (CMP), friction between the polishing pad and the wafer can be reduced, thereby lowering the temperature of the solvent.
- CMP chemical mechanical polishing
- the boiling point is increased by attraction between solvents.
- the thermal stability of the slurry composition be improved, but as the temperature of the solvent is lowered, the particle size of the slurry composition can be suppressed from being increased at high temperatures, so that scratches generated on the silicon (substrate) oxide film during metal film polishing are prevented. Can be reduced.
- the step of contacting the metal film polishing slurry composition comprising an organic solvent containing a nitrogen (N) atom and a glycol-based organic solvent with a substrate on which the metal film is formed And contacting the polishing pad with the substrate and moving the polishing pad relative to the substrate to remove at least a portion of the metal film from the substrate.
- the slurry composition may include an abrasive, a catalyst, an oxidizing agent, an organic solvent containing a nitrogen atom, a glycol-based organic solvent, water, and the like.
- the slurry composition is uniformly applied to the upper portion of the polishing pad by the high-speed rotation of the polishing pad, and in contact with the surface of the substrate on which the metal film is formed.
- the polishing unit contacts one surface of the substrate to the polishing pad and moves the polishing pad relative to the substrate. At this time, since the substrate flows in contact with the polishing pad to which the slurry composition is uniformly applied, the surface is oxidized and polished.
- the polishing unit when the opposite surface of the substrate is sufficiently polished, the polishing unit repeatedly positions the polished substrate to the outside and positions the next substrate to repeat the polishing operation.
- the surface layer of the polishing pad is abraded by a continuous polishing operation, so that the surface layer should be polished and reused.
- the polishing pad while supplying the slurry composition, the polishing pad is rotated to polish the surface layer of the polishing pad.
- the polishing step of the substrate is prepared.
- the metal film in the manufacture of a semiconductor integrated circuit, the metal film can be effectively removed while suppressing the occurrence of scratches on the silicon oxide film in the polishing process of the composite film of the metal film and the silicon oxide film. It can be polished. That is, according to the present invention, a method of reducing scratches generated during polishing of a metal film may be performed by mixing an organic solvent and a glycol-based organic solvent containing nitrogen atoms having different boiling points in an appropriate ratio, thereby increasing the boiling point by the attraction force between the solvents.
- the frictional force between the polishing pad and the wafer may be reduced during the chemical mechanical polishing (CMP) process, thereby lowering the temperature of the solvent.
- CMP chemical mechanical polishing
- the zeta potential is increased to improve the stability of the abrasive particles.
- the particle size of the slurry composition is increased due to the high temperature generated when using the existing metal film polishing slurry composition, and as a result, the thermal stability of the slurry composition is improved by lowering the temperature of the solvent, unlike a large amount of scratches. By improving, it is possible to suppress an increase in the particle size of the slurry composition, thereby reducing scratches occurring in the silicon oxide film.
- the metal film polishing slurry composition according to the present invention will be described in order to suppress the occurrence of scratches of the silicon oxide film while polishing the metal film efficiently, from 0.001 to 10% by weight of abrasive (abrasive particles), 0.00001 to 0.1 wt% catalyst, 0.1 to 10 wt% oxidant, organic solvent containing 0.1 to 10 wt% nitrogen atom, 0.1 to 50 wt% glycol-based organic solvent and the remaining water, including the nitrogen atom
- abrasive abrasive particles
- abrasive particles 0.00001 to 0.1 wt% catalyst, 0.1 to 10 wt% oxidant, organic solvent containing 0.1 to 10 wt% nitrogen atom, 0.1 to 50 wt% glycol-based organic solvent and the remaining water, including the nitrogen atom
- the mixing ratio of the organic solvent and the glycol-based organic solvent to have a weight ratio of 1: 1 to 1: 500.
- a pH adjusting agent may be further included.
- the abrasive used in the metal film polishing slurry composition of the present invention is for mechanically (physically) polishing the metal film, and includes silicas such as fumed silica and colloidal silica, alumina, ceria, titania, Abrasives such as zirconia (zirconium oxide), gennanic and mixtures thereof can be used without limitation, and the use of the silica is most preferred.
- the content of the abrasive is 0.001 to 10% by weight, preferably 0.01 to 10% by weight, more preferably 0.1 to 5% by weight based on the total slurry composition. If the amount of the abrasive is too large, scratches on the metal film and the silicon oxide film may be excessively generated. If the amount of the abrasive is too small, the polishing rate of the metal film may be lowered.
- the catalyst is a non-ionized thermally active catalyst that releases electrons and holes by energy generated in the metal film polishing process, and the electrons emitted from the catalyst react with an oxidizing agent such as hydrogen peroxide to generate hydroxyl radicals.
- the catalyst is a transition metal silicide such as ferosilicon (FeSi), manganese silicide (MnSi), cobalt silicide (CoSi) and mixtures thereof, and preferably nano ferrosilicon (FeSi) may be used. .
- the general content of the iron (Fe) component is preferably 0.01 to 99% by weight, more preferably 0.1 to 50% by weight relative to the entire ferrosilicon (FeSi), the iron If the content of the (Fe) component is too small, there is a possibility that it will not be activated by the polishing process energy, and if too large, there is a fear that it becomes a conductor and loses the function of the catalyst.
- the nano ferrosilicon (FeSi) catalyst is a nano-sized particle, specifically, has a particle size of 1 to 1,000 nm, preferably 1 to 20 nm, more preferably 2 to 10 nm, particles of the nano-catalyst If the size is too small, it may not be formed into particles. If the size is too large, the catalytic activity may be lowered, or there may be a problem such as scratching in the polishing step.
- the amount of the nano ferrosilicon (FeSi) catalyst used is 0.00001 to 0.1 wt% (0.1 to 1000 ppm), preferably 0.001 to 0.05 wt%, based on the total slurry composition.
- the ferrosilicon (FeSi) catalyst is disclosed in detail in the applicant's patent registration No. 10-0928456, the contents of which are incorporated herein by reference.
- the oxidizing agent used in the metal film polishing slurry composition according to the present invention is for quickly forming an oxide film on the surface of the metal film to facilitate the polishing of the metal film.
- the per-compound means a compound comprising at least one peroxy group (-OO-) or a compound comprising an element in its own highest oxidation state.
- the oxidizing agent include hydrogen peroxide (H 2 O 2 ), urea hydrogen peroxide, monopersulfate, dipersulfate, peracetic acid, percarbonate, benzoyl peroxide, periodic acid, periodic salt, perbromic acid, perboric acid , Perborate, perchloro acid, perchloroate, permanganate, permanganate salt, and mixtures thereof and the like can be used alone or in combination, preferably hydrogen peroxide.
- the oxidant is oxidized to oxides, hydroxides, ions, and the like corresponding to metal films such as wafers and substrates.
- the oxidant is used at 0.1 to 10% by weight, preferably 0.2 to 5% by weight based on the total slurry composition.
- the usage-amount of the said oxidant is too small, there exists a possibility that the polishing rate of a metal film may fall, and when too much, there exists a possibility that a polishing efficiency may fall.
- the organic solvent used in the metal film polishing slurry composition according to the present invention is used by mixing two or more kinds such as an organic solvent containing a nitrogen atom and a glycol-based organic solvent, storage temperature and chemical mechanical polishing (CMP By maximally suppressing the formation of macroparticles due to heat generated during the process, not only the dispersion stability and thermal stability can be improved, but also the frictional force can be reduced to reduce scratches generated in the silicon oxide film.
- CMP chemical mechanical polishing
- the organic solvent including the nitrogen atom may be used without limitation, an organic solvent containing a nitrogen (N) atom, but may be an amide compound, an imide compound, an amine compound, and the like. It is preferable to use an imine compound etc. single or in mixture.
- the amide compound include acrylamide, 2-propenamide and sulfonamide, and among these, acrylamide is preferably used.
- Specific examples of the imide compound include succinimide and phthalide. It is preferable to use a phthalimide, and the like, and specific examples of the amine organic solvent include trimethyl amine, triethyl amine, tripropyl amine, Tributyl amine, tripentyl amine, trihexyl amine, triheptyl amine, trioctyl amine and tridecyl amine. Of these, tributylamine is preferably used, and specific examples of the imine-based compound include ethyleneimine and N-sulfonylimine.
- glycol-based organic solvent monoethylene glycol (diethylene glycol), diethylene glycol (diethylene glycol), triethylene glycol (triethylene glycol) and the like and mixtures thereof may be used alone or in combination, preferably Preferably diethylene glycol.
- the content of the organic solvent including the nitrogen atom is 0.1 to 10% by weight, preferably 0.1 to 5% by weight, more preferably 0.1 to 2% by weight based on the total slurry composition
- the content of the glycol-based organic solvent Silver is 0.1 to 50% by weight, preferably 0.1 to 30% by weight, more preferably 0.1 to 10% by weight based on the total slurry composition.
- the organic solvent and the glycol-based organic solvent containing the nitrogen atom should be mixed in an appropriate ratio, the mixing ratio of the organic solvent and the glycol-based organic solvent containing the nitrogen atom, the weight ratio of 1: 1 to 1: 500, Preferably it may have a weight ratio of 1: 1 to 1: 300, more preferably a weight ratio of 1: 1 to 1: 100 and the like. If the amount of the organic solvent containing the nitrogen atom and the glycol-based organic solvent is too small, the storage stability at high temperature may deteriorate. If the amount of the organic solvent is too high, the CMP characteristics may be discolored.
- the mixing ratio of the organic solvent and the glycol-based organic solvent containing the nitrogen atom is in the range of 1: 1 to 1: 500 by weight, the stability is improved and the number of scratches can be reduced, but the range When it deviates, CMP characteristic falls too much, and there exists a possibility that the reducing effect (improvement effect) of a scratch number may fall.
- the remaining components constituting the metal film polishing slurry composition according to the present invention deionized water, distilled water, and the like may be used.
- the water content is expressed as%, the water content is, for example, 36 to 97%. Can be.
- the metal film polishing slurry composition according to the present invention may further include other conventional additives within the scope of achieving the object and effect of the invention.
- the slurry composition according to the present invention may be prepared by any known method, and for example, each component such as an abrasive, a catalyst, an oxidant, an organic solvent, or the like may be used in an aqueous medium such as deionized water and distilled water (hereinafter, if necessary). , Simply referred to as "water”).
- the pH of the metal film polishing slurry composition according to the present invention is 1 to 7, preferably 1 to 4, when the pH of the slurry composition is too high, there is a fear that the oxide film formation is insufficient and the polishing rate is lowered.
- the pH adjusting agent which may be further included as necessary, controls the dispersion degree of the abrasive (polishing particles) by adjusting the pH of the metal film polishing slurry composition, and the pH of the metal film polishing slurry composition is preferably 1 to 7, 7. Preferably 1 to 4.
- PH adjusting agents (acids, bases) used in conventional metal film polishing slurry compositions can be used without limitation, for example, acids such as sulfuric acid, hydrochloric acid, phosphoric acid, nitric acid, tartaric acid, citric acid, oxalic acid, benzic acid, and the like.
- Bases such as ammonia, potassium hydroxide, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrabutylammonium hydroxide (TBAH) and mixtures thereof Etc. can be used alone or in combination.
- TMAH tetramethylammonium hydroxide
- TEAH tetraethylammonium hydroxide
- TBAH tetrabutylammonium hydroxide
- the content of the pH adjusting agent may vary depending on the pH of the metal film polishing slurry composition, for example, 0.05 to 10% by weight, preferably 0.1 to 5% by weight, more preferably, based on the total slurry composition. Is 0.3 to 2% by weight.
- the content of the pH adjusting agent is out of the range, it is difficult to adjust the pH of the metal film polishing slurry composition, and may act as an impurity.
- IC-1010 polishing pad (Rohm & Haas) was attached to a Mirra 3400 polishing machine from Applied Materials, Inc., and an 8-inch tungsten (W) blanket wafer was mounted. .
- W 8-inch tungsten
- the tungsten film W was polished for 60 seconds while injecting the slurry compositions prepared in Examples 1 to 10 and Comparative Examples 1 and 2 into the wafer. Polishing conditions at this time are shown in Table 2 below.
- the IC pressure, RR pressure, EC pressure, and UC pressure of Table 2 are Inter Chamber Pressure, Retainer Ring Pressure, External Chamber Pressure, and Upper Chamber Pressure, respectively, and represent pressure conditions for each region in the head on which the wafer is mounted.
- the number of scratches is reduced by 30 to 90% according to the mixing ratio of the organic solvent (amine-based organic solvent) and the glycol-based organic solvent containing a nitrogen atom, and at the same time the frictional force is reduced It can be seen that the temperature of the polishing pad is also lowered.
- the number of scratches, the frictional force and the temperature of the polishing pad are different according to the mixing ratio of the two organic solvents, using a metal film polishing slurry composition according to the present invention In the embodiment, it can be seen that not only the number of scratches is reduced, but the temperature of the polishing pad is also lowered.
- Example 1 65 nm 69 nm 76 nm 84 nm 90 nm 15.3
- Example 2 65 nm 72 nm 77 nm 88 nm 93 nm 16.2
- Example 3 65 nm 68 nm 75 nm 79 nm 85 nm 16.5
- Example 4 65 nm 70 nm 74 nm 86 nm 97 nm 15.9
- Example 5 65 nm 68 nm 73 nm 90 nm 101 nm 16.5
- Example 6 65 nm 67 nm 72 nm 85 nm 94 nm 16.1
- Example 7 65 nm 69 nm 73 nm 84 nm 92 nm 16.9
- Example 8 65 nm 65 66 nm 67 nm 70 nm 16.8
- Example 9 65 nm 67 nm 68 nm 71
- Example 11 2 1.5 66 acrylamide 0.5 ethyleneglycol 30 60
- Example 12 2 1.5 66 phthalimide 0.5 ethyleneglycol 30 60
- Example 13 2 1.5 66 tributyl amine 0.5 diethyleneglycol 10 ethyleneglycol 20 60
- Example 14 2 1.5 56 acrylamide 0.1 diethyleneglycol 40 tributyl amine 0.1 60
- Example 11 65 nm 68 nm 76 nm 83 nm 92 nm 16.1
- Example 12 65 nm 69 nm 78 nm 85 nm 93 nm 16.5
- Example 13 65 nm 68 nm 79 nm 82 nm 88 nm 16.7
- Example 14 65 nm 70 nm 78 nm 84 nm 91 nm 16.3
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
연마제 (실리카, 중량%) | 산화제 (H2O2, 중량%) | 물 (중량%) | 유기용매(중량%) | 나노 페로실리콘 (ppm) | ||
Tributyl amine | Diethylene glycol | |||||
실시예 1 | 2 | 1.5 | 96.3 | 0.1 | 0.1 | 60 |
실시예 2 | 2 | 1.5 | 95.4 | 0.1 | 1 | 60 |
실시예 3 | 2 | 1.5 | 86.4 | 0.1 | 10 | 60 |
실시예 4 | 2 | 1.5 | 76.4 | 0.1 | 20 | 60 |
실시예 5 | 2 | 1.5 | 66.4 | 0.1 | 30 | 60 |
실시예 6 | 2 | 1.5 | 86.0 | 0.5 | 10 | 60 |
실시예 7 | 2 | 1.5 | 76.0 | 0.5 | 20 | 60 |
실시예 8 | 2 | 1.5 | 66.0 | 0.5 | 30 | 60 |
실시예 9 | 2 | 1.5 | 56.0 | 0.5 | 40 | 60 |
실시예 10 | 2 | 1.5 | 46.0 | 0.5 | 50 | 60 |
비교예 1 | 2 | 1.5 | 96.5 | 0 | 0 | 60 |
비교예 2 | 2 | 1.5 | 36.4 | 0.1 | 60 | 60 |
Platen 속도 | Head속도 | IC 압력 | RR 압력 | EC 압력 | UC 압력 | 슬러리 유속 |
85 rpm | 70 rpm | 2.5 psi | 10.4 psi | 5.2 Psi | 5.2 psi | 150 ml/min |
텅스텐막 연마속도 (Å/min) | 스크래치 개수 | 연마패드 온도(℃) | 마찰력(kgf) | |
실시예 1 | 3140 | 10 | 49 | 26.5 |
실시예 2 | 3167 | 7 | 50 | 26.7 |
실시예 3 | 3087 | 8 | 49 | 26.8 |
실시예 4 | 3094 | 9 | 50 | 26.1 |
실시예 5 | 3019 | 13 | 50 | 26.5 |
실시예 6 | 2947 | 11 | 49 | 26.9 |
실시예 7 | 2975 | 10 | 49 | 26.4 |
실시예 8 | 3108 | 2 | 48 | 25.3 |
실시예 9 | 3142 | 4 | 48 | 25.2 |
실시예 10 | 2973 | 11 | 50 | 25.5 |
비교예 1 | 3184 | 18 | 52 | 27.5 |
비교예 2 | 3085 | 21 | 52 | 24.2 |
실험일 | 1주 | 2주 | 3주 | 4주 | Zeta potential(mV) | |
실시예 1 | 65 nm | 69 nm | 76 nm | 84 nm | 90 nm | 15.3 |
실시예 2 | 65 nm | 72 nm | 77 nm | 88 nm | 93 nm | 16.2 |
실시예 3 | 65 nm | 68 nm | 75 nm | 79 nm | 85 nm | 16.5 |
실시예 4 | 65 nm | 70 nm | 74 nm | 86 nm | 97 nm | 15.9 |
실시예 5 | 65 nm | 68 nm | 73 nm | 90 nm | 101 nm | 16.5 |
실시예 6 | 65 nm | 67 nm | 72 nm | 85 nm | 94 nm | 16.1 |
실시예 7 | 65 nm | 69 nm | 73 nm | 84 nm | 92 nm | 16.9 |
실시예 8 | 65 nm | 65 nm | 66 nm | 67 nm | 70 nm | 16.8 |
실시예 9 | 65 nm | 67 nm | 68 nm | 71 nm | 75 nm | 15.7 |
실시예 10 | 65 nm | 71 nm | 86 nm | 98 nm | 105 nm | 16.4 |
비교예 1 | 66 nm | 71 nm | 100 nm | 155 nm | 215 nm | 2.4 |
연마제 (실리카, 중량%) | 산화제 (H2O2, 중량%) | 물(중량%) | 유기용매(중량%) | 나노 페로실리콘(ppm) | |||
실시예 11 | 2 | 1.5 | 66 | acrylamide 0.5 | ethyleneglycol 30 | 60 | |
실시예 12 | 2 | 1.5 | 66 | phthalimide 0.5 | ethyleneglycol 30 | 60 | |
실시예 13 | 2 | 1.5 | 66 | tributyl amine 0.5 | diethyleneglycol 10 | ethyleneglycol 20 | 60 |
실시예 14 | 2 | 1.5 | 56 | acrylamide 0.1 | diethyleneglycol 40 | tributyl amine 0.1 | 60 |
텅스텐막 연마속도(Å/min) | 스크래치 개수 | 연마패드 온도(℃) | 마찰력(kgf) | |
실시예 11 | 3084 | 8 | 50 | 26.1 |
실시예 12 | 2958 | 10 | 49 | 26.7 |
실시예 13 | 2906 | 13 | 49 | 26.3 |
실시예 14 | 3031 | 11 | 50 | 26.4 |
실험일 | 1주 | 2주 | 3주 | 4주 | Zeta potential(mV) | |
실시예 11 | 65 nm | 68 nm | 76 nm | 83 nm | 92 nm | 16.1 |
실시예 12 | 65 nm | 69 nm | 78 nm | 85 nm | 93 nm | 16.5 |
실시예 13 | 65 nm | 68 nm | 79 nm | 82 nm | 88 nm | 16.7 |
실시예 14 | 65 nm | 70 nm | 78 nm | 84 nm | 91 nm | 16.3 |
Claims (14)
- 질소 원자를 포함하는 유기용매 및 글리콜계 유기용매를 포함하는 금속막 연마 슬러리 조성물을 금속막이 형성된 기판과 접촉시키는 단계; 및연마 패드를 상기 기판과 접촉시키고, 상기 연마 패드를 기판에 대해 이동시켜, 상기 기판으로부터 상기 금속막의 적어도 일부를 제거하는 단계를 포함하는 금속막 연마 시 발생하는 스크래치의 감소 방법.
- 청구항 1에 있어서, 상기 질소 원자를 포함하는 유기용매는, 아미드계 화합물, 이미드계 화합물, 아민계 화합물 및 이민계 화합물로 이루어진 군으로부터 선택되는 것인, 금속막 연마 시 발생하는 스크래치의 감소 방법.
- 청구항 1에 있어서, 상기 질소 원자를 포함하는 유기용매는, 아크릴아미드, 2-프로펜아미드 및 설폰아미드로 이루어진 군으로부터 선택되는 아미드계 화합물, 숙신이미드 및 프탈이미드로 이루어진 군으로부터 선택되는 이미드계 화합물, 트리메틸아민, 트리에틸아민, 트리프로필아민, 트리부틸아민, 트리펜틸아민, 트리헥실아민, 트리헵틸아민, 트리옥틸아민 및 트리데실아민으로 이루어진 군으로부터 선택되는 아민계 화합물 및 에틸렌이민 및 N-설포닐이민으로 이루어진 군으로부터 선택되는 이민계 화합물로 이루어진 군으로부터 선택되는 것인, 금속막 연마 시 발생하는 스크래치의 감소 방법.
- 청구항 1에 있어서, 상기 글리콜계 유기용매는 모노에틸렌글리콜, 디에틸렌글리콜, 트리에틸렌글리콜 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것인, 금속막 연마 시 발생하는 스크래치의 감소 방법.
- 0.001 내지 10 중량%의 연마제;0.00001 내지 0.1 중량%의 촉매;0.1 내지 10 중량%의 산화제;0.1 내지 10 중량%의 질소 원자를 포함하는 유기용매;0.1 내지 50 중량%의 글리콜계 유기용매; 및나머지 물을 포함하며,상기 질소 원자를 포함하는 유기용매 및 글리콜계 유기용매의 혼합 비율은 1 : 1 내지 1 : 500의 중량비를 가지는 금속막 연마 슬러리 조성물.
- 청구항 5에 있어서, 상기 질소 원자를 포함하는 유기용매는, 아미드계 화합물, 이미드계 화합물, 아민계 화합물 및 이민계 화합물로 이루어진 군으로부터 선택되는 것인, 금속막 연마 슬러리 조성물.
- 청구항 5에 있어서, 상기 질소 원자를 포함하는 유기용매는, 아크릴아미드, 2-프로펜아미드 및 설폰아미드로 이루어진 군으로부터 선택되는 아미드계 화합물, 숙신이미드 및 프탈이미드로 이루어진 군으로부터 선택되는 이미드계 화합물, 트리메틸아민, 트리에틸아민, 트리프로필아민, 트리부틸아민, 트리펜틸아민, 트리헥실아민, 트리헵틸아민, 트리옥틸아민 및 트리데실아민으로 이루어진 군으로부터 선택되는 아민계 화합물 및 에틸렌이민 및 N-설포닐이민으로 이루어진 군으로부터 선택되는 이민계 화합물로 이루어진 군으로부터 선택되는 것인, 금속막 연마 슬러리 조성물.
- 청구항 5에 있어서, 상기 글리콜계 유기용매는 모노에틸렌글리콜, 디에틸렌글리콜, 트리에틸렌글리콜 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것인, 금속막 연마 슬러리 조성물.
- 청구항 5에 있어서, 상기 연마제는 실리카, 알루미나, 세리아, 티타니아, 지르코니아(산화지르코늄), 젠나니아 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것인, 금속막 연마 슬러리 조성물.
- 청구항 5에 있어서, 상기 촉매는 페로실리콘(FeSi), 망간실리사이드(MnSi), 코발트실리사이드(CoSi) 및 이들의 혼합물로 이루어진 군으로부터 선택되는 전이 금속 실리사이드(transition metal silicide)인 것인, 금속막 연마 슬러리 조성물.
- 청구항 5에 있어서, 상기 산화제는 과산화수소(H2O2), 우레아 과산화수소, 모노퍼설페이트, 디퍼설페이트, 퍼아세트산, 퍼카보네이트, 벤조일페록사이드, 퍼요오드산, 퍼요오디에이트염, 퍼브롬산, 과붕산, 과붕산염, 퍼클로로산, 퍼클로로산염, 퍼망가네이트, 퍼망가네이트염 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것인, 금속막 연마 슬러리 조성물.
- 청구항 5에 있어서, 상기 금속막 연마 슬러리 조성물은 pH 조절제를 더욱 포함하는 것인, 금속막 연마 슬러리 조성물.
- 청구항 12에 있어서, 상기 pH 조절제는 상기 금속막 연마 슬러리 조성물의 pH를 1 내지 7로 조절하는 것인, 금속막 연마 슬러리 조성물.
- 청구항 12에 있어서, 상기 pH 조절제는 황산, 염산, 인산, 질산, 타르타르산, 시트르산, 옥살산, 벤존산의 산과, 암모니아, 수산화칼륨, 테트라메틸암모늄 히드록사이드(TMAH), 테트라에틸암모늄 히드록사이드(TEAH), 테트라부틸암모늄 히드록사이드(TBAH)의 염기 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것인, 금속막 연마 슬러리 조성물.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/030,981 US10043678B2 (en) | 2013-10-23 | 2014-10-21 | Metal film polishing slurry composition, and method for reducing scratches generated when polishing metal film by using same |
JP2016525905A JP6542766B2 (ja) | 2013-10-23 | 2014-10-21 | 金属膜研磨スラリー組成物、及びこれを利用した金属膜研磨時に発生するスクラッチの減少方法 |
CN201480058695.7A CN105658757B (zh) | 2013-10-23 | 2014-10-21 | 金属膜抛光浆料组合物及使用其减少金属膜抛光时产生的划痕的方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130126600 | 2013-10-23 | ||
KR10-2013-0126600 | 2013-10-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015060610A1 true WO2015060610A1 (ko) | 2015-04-30 |
Family
ID=52993144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2014/009871 WO2015060610A1 (ko) | 2013-10-23 | 2014-10-21 | 금속막 연마 슬러리 조성물 및 이를 이용한 금속막 연마 시 발생하는 스크래치의 감소 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10043678B2 (ko) |
JP (1) | JP6542766B2 (ko) |
KR (2) | KR102427981B1 (ko) |
CN (1) | CN105658757B (ko) |
TW (1) | TWI646182B (ko) |
WO (1) | WO2015060610A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109153889A (zh) * | 2016-05-19 | 2019-01-04 | 东进世美肯株式会社 | 用于化学机械抛光的浆料组合物 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102611598B1 (ko) * | 2017-04-27 | 2023-12-08 | 주식회사 동진쎄미켐 | 화학-기계적 연마용 슬러리 조성물 |
CN109054656B (zh) * | 2018-09-17 | 2021-07-06 | 宁波日晟新材料有限公司 | 一种金属自由曲面表面抛光液及其制备方法和应用 |
KR20220024083A (ko) * | 2019-06-27 | 2022-03-03 | 닛산 가가쿠 가부시키가이샤 | 염기성 물질을 함유하는 수친화성이 높은 연마입자를 이용한 연마용 조성물 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030087525A1 (en) * | 2000-08-31 | 2003-05-08 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
KR20040047959A (ko) * | 2001-10-24 | 2004-06-05 | 다이킨 고교 가부시키가이샤 | 세정용 조성물 |
KR20050060213A (ko) * | 2003-12-16 | 2005-06-22 | 주식회사 엘지화학 | 산화세륨을 포함하는 cmp용 슬러리 |
KR20050120816A (ko) * | 2003-05-07 | 2005-12-23 | 프리스케일 세미컨덕터, 인크. | 반도체 프로세싱 동안 도전성 표면을 패시베이트하는 방법 |
WO2010084033A2 (en) * | 2009-01-22 | 2010-07-29 | Basf Se | Composition for post chemical-mechanical polishing cleaning |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4816836B2 (ja) * | 1998-12-28 | 2011-11-16 | 日立化成工業株式会社 | 金属用研磨液及びそれを用いた研磨方法 |
JP4866503B2 (ja) * | 1998-12-28 | 2012-02-01 | 日立化成工業株式会社 | 金属用研磨液材料及び金属用研磨液 |
CN1306562C (zh) * | 2001-10-26 | 2007-03-21 | 旭硝子株式会社 | 研磨剂、研磨剂的制造方法以及研磨方法 |
KR20060016498A (ko) * | 2004-08-18 | 2006-02-22 | 삼성전자주식회사 | 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법 |
JP5433936B2 (ja) * | 2006-10-11 | 2014-03-05 | 日立化成株式会社 | 金属用研磨液とその製造方法及び金属用研磨液を用いた被研磨膜の研磨方法 |
KR100928456B1 (ko) * | 2009-06-01 | 2009-11-25 | 주식회사 동진쎄미켐 | 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법 |
US8858819B2 (en) * | 2010-02-15 | 2014-10-14 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a tungsten-containing substrate |
SG184276A1 (en) * | 2010-03-29 | 2012-11-29 | Asahi Glass Co Ltd | Polishing slurry, polishing method and manufacturing method of semiconductor integrated circuit device |
-
2014
- 2014-10-21 WO PCT/KR2014/009871 patent/WO2015060610A1/ko active Application Filing
- 2014-10-21 KR KR1020140142382A patent/KR102427981B1/ko active IP Right Grant
- 2014-10-21 CN CN201480058695.7A patent/CN105658757B/zh active Active
- 2014-10-21 JP JP2016525905A patent/JP6542766B2/ja active Active
- 2014-10-21 US US15/030,981 patent/US10043678B2/en active Active
- 2014-10-23 TW TW103136594A patent/TWI646182B/zh active
-
2022
- 2022-07-26 KR KR1020220092734A patent/KR102594857B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030087525A1 (en) * | 2000-08-31 | 2003-05-08 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
KR20040047959A (ko) * | 2001-10-24 | 2004-06-05 | 다이킨 고교 가부시키가이샤 | 세정용 조성물 |
KR20050120816A (ko) * | 2003-05-07 | 2005-12-23 | 프리스케일 세미컨덕터, 인크. | 반도체 프로세싱 동안 도전성 표면을 패시베이트하는 방법 |
KR20050060213A (ko) * | 2003-12-16 | 2005-06-22 | 주식회사 엘지화학 | 산화세륨을 포함하는 cmp용 슬러리 |
WO2010084033A2 (en) * | 2009-01-22 | 2010-07-29 | Basf Se | Composition for post chemical-mechanical polishing cleaning |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109153889A (zh) * | 2016-05-19 | 2019-01-04 | 东进世美肯株式会社 | 用于化学机械抛光的浆料组合物 |
US11001732B2 (en) | 2016-05-19 | 2021-05-11 | Dongjin Semichem Co., Ltd. | Polishing slurry composition |
CN109153889B (zh) * | 2016-05-19 | 2021-10-29 | 东进世美肯株式会社 | 用于化学机械抛光的浆料组合物 |
Also Published As
Publication number | Publication date |
---|---|
CN105658757B (zh) | 2019-02-19 |
US20160247693A1 (en) | 2016-08-25 |
KR102427981B1 (ko) | 2022-08-02 |
JP2016540840A (ja) | 2016-12-28 |
TWI646182B (zh) | 2019-01-01 |
KR20150047104A (ko) | 2015-05-04 |
TW201527505A (zh) | 2015-07-16 |
KR20220110468A (ko) | 2022-08-08 |
JP6542766B2 (ja) | 2019-07-10 |
US10043678B2 (en) | 2018-08-07 |
CN105658757A (zh) | 2016-06-08 |
KR102594857B1 (ko) | 2023-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6974777B2 (en) | CMP compositions for low-k dielectric materials | |
JP4952745B2 (ja) | Cmp研磨剤および基板の研磨方法 | |
KR101718788B1 (ko) | 화학 기계 연마 조성물 및 관련 방법 | |
KR100741630B1 (ko) | 화학적-기계적 연마 조성물 및 이를 이용하는 방법 | |
US9524874B2 (en) | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films | |
WO2010140788A2 (ko) | 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법 | |
KR102594857B1 (ko) | 금속막 연마 슬러리 조성물 | |
US20090181540A1 (en) | Chemical mechanical polishing method | |
KR20050016128A (ko) | 반도체 층 연마용 조성물 | |
EP2625236B1 (en) | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers | |
KR101285948B1 (ko) | 멀티 선택비를 갖는 연마 슬러리 조성물 및 이를 사용한 반도체 소자 제조방법 | |
KR102217516B1 (ko) | 금속막 연마용 화학 기계적 연마 슬러리 조성물 및 금속막의 연마 방법 | |
WO2017057906A1 (ko) | 유기막 연마용 cmp 슬러리 조성물 및 이를 이용한 연마방법 | |
KR102605140B1 (ko) | 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법 | |
WO2020091242A1 (ko) | 구리 배리어층 연마용 슬러리 조성물 | |
KR20150019008A (ko) | 금속막 연마용 화학 기계적 연마 슬러리 조성물 및 금속막의 연마 방법 | |
KR102200914B1 (ko) | 금속막 연마용 화학 기계적 연마 슬러리 조성물 및 금속막의 연마 방법 | |
KR100496501B1 (ko) | 구리배선에서 탄탈 금속 또는 탄탈계 화합물로 된 확산방지재의 cmp용 연마 슬러리 조성물 | |
KR102574842B1 (ko) | 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법 | |
KR100449614B1 (ko) | 침식현상이 개선된 금속배선 연마용 슬러리 조성물 | |
WO2013024971A2 (ko) | 텅스텐 연마용 cmp 슬러리 조성물 | |
JP2012069976A (ja) | Cmp研磨剤及び基板の研磨方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14856026 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15030981 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2016525905 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14856026 Country of ref document: EP Kind code of ref document: A1 |