CN109153889B - 用于化学机械抛光的浆料组合物 - Google Patents

用于化学机械抛光的浆料组合物 Download PDF

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Publication number
CN109153889B
CN109153889B CN201780030849.5A CN201780030849A CN109153889B CN 109153889 B CN109153889 B CN 109153889B CN 201780030849 A CN201780030849 A CN 201780030849A CN 109153889 B CN109153889 B CN 109153889B
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Prior art keywords
aluminum
abrasive
slurry composition
weight
chemical mechanical
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Chinese (zh)
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CN109153889A (zh
Inventor
朴惠贞
金宰贤
朴锺大
李敏键
申宗哲
陈成勋
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Dongjin Semichem Co Ltd
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Dongjin Semichem Co Ltd
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201780030849.5A 2016-05-19 2017-05-17 用于化学机械抛光的浆料组合物 Active CN109153889B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2016-0061230 2016-05-19
KR20160061230 2016-05-19
PCT/KR2017/005118 WO2017200297A1 (ko) 2016-05-19 2017-05-17 화학-기계적 연마용 슬러리 조성물

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CN109153889A CN109153889A (zh) 2019-01-04
CN109153889B true CN109153889B (zh) 2021-10-29

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US (2) US20190077993A1 (enExample)
JP (1) JP7032327B2 (enExample)
KR (1) KR102450333B1 (enExample)
CN (1) CN109153889B (enExample)
TW (1) TWI736623B (enExample)
WO (1) WO2017200297A1 (enExample)

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KR102672869B1 (ko) * 2018-03-30 2024-06-05 닛키 쇼쿠바이카세이 가부시키가이샤 실리카 입자 분산액, 연마 조성물 및 실리카 입자 분산액의 제조 방법
KR102709495B1 (ko) * 2018-12-31 2024-09-25 주식회사 동진쎄미켐 화학-기계적 연마 입자 및 이를 포함하는 연마 슬러리 조성물
CN113474289A (zh) * 2019-02-21 2021-10-01 三菱化学株式会社 二氧化硅粒子及其制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法和半导体器件的制造方法
JP7576023B2 (ja) * 2019-03-27 2024-10-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および基板の製造方法
JP7356865B2 (ja) * 2019-10-30 2023-10-05 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法
JP7356864B2 (ja) * 2019-10-30 2023-10-05 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法
JP7716857B2 (ja) * 2020-03-23 2025-08-01 株式会社フジミインコーポレーテッド 研磨用組成物
JP7663369B2 (ja) * 2020-03-30 2025-04-16 株式会社フジミインコーポレーテッド 研磨用組成物
US11421132B2 (en) * 2020-03-30 2022-08-23 Fujimi Incorporated Polishing composition
US11180679B1 (en) 2020-05-27 2021-11-23 Skc Solmics Co., Ltd. Composition for semiconductor processing and method for polishing substrate using the same
WO2023007722A1 (ja) * 2021-07-30 2023-02-02 昭和電工マテリアルズ株式会社 研磨液及び研磨方法

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JPS6086186A (ja) * 1983-10-17 1985-05-15 Toshiba Ceramics Co Ltd 半導体ウエ−ハ研摩材
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JP2003197573A (ja) * 2001-12-26 2003-07-11 Ekc Technology Kk メタル膜絶縁膜共存表面研磨用コロイダルシリカ
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US3922393A (en) * 1974-07-02 1975-11-25 Du Pont Process for polishing silicon and germanium semiconductor materials
JPS6086186A (ja) * 1983-10-17 1985-05-15 Toshiba Ceramics Co Ltd 半導体ウエ−ハ研摩材
US4959113A (en) * 1989-07-31 1990-09-25 Rodel, Inc. Method and composition for polishing metal surfaces
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5366542A (en) * 1990-08-29 1994-11-22 Fujimi Incorporated Polishing composition
JPH1121545A (ja) * 1997-06-30 1999-01-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
CN1289811A (zh) * 1999-09-27 2001-04-04 不二见美国股份有限公司 抛光组合物
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TW200804575A (en) * 2006-04-28 2008-01-16 Fujifilm Corp Metal polishing composition and chemical mechanical polishing method using the same
TW200804578A (en) * 2006-06-27 2008-01-16 Rohm & Haas Elect Mat Selective barrier slurry for chemical mechanical polishing
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CN104137182A (zh) * 2012-02-29 2014-11-05 Hoya株式会社 磁盘用玻璃基板的制造方法和磁盘的制造方法
CN105189043A (zh) * 2013-03-15 2015-12-23 埃科莱布美国股份有限公司 抛光蓝宝石表面的方法
WO2015060610A1 (ko) * 2013-10-23 2015-04-30 주식회사 동진쎄미켐 금속막 연마 슬러리 조성물 및 이를 이용한 금속막 연마 시 발생하는 스크래치의 감소 방법
CN104650739A (zh) * 2013-11-22 2015-05-27 安集微电子（上海）有限公司 一种用于抛光二氧化硅基材的化学机械抛光液
CN104588568A (zh) * 2014-11-21 2015-05-06 广东惠和硅制品有限公司 一种铝改性硅溶胶的制备方法
CN107207910A (zh) * 2015-02-03 2017-09-26 嘉柏微电子材料股份公司 用于移除硅氮化物的化学机械抛光组合物

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US20190077993A1 (en) 2019-03-14
US11001732B2 (en) 2021-05-11
JP2019522896A (ja) 2019-08-15
WO2017200297A1 (ko) 2017-11-23
TWI736623B (zh) 2021-08-21
KR102450333B1 (ko) 2022-10-04
KR20170131247A (ko) 2017-11-29
CN109153889A (zh) 2019-01-04
JP7032327B2 (ja) 2022-03-08
TW201811944A (zh) 2018-04-01
US20190077994A1 (en) 2019-03-14

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