JP7032327B2 - 化学－機械的研磨用スラリー組成物 - Google Patents

化学－機械的研磨用スラリー組成物 Download PDF

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Publication number
JP7032327B2
JP7032327B2 JP2018560761A JP2018560761A JP7032327B2 JP 7032327 B2 JP7032327 B2 JP 7032327B2 JP 2018560761 A JP2018560761 A JP 2018560761A JP 2018560761 A JP2018560761 A JP 2018560761A JP 7032327 B2 JP7032327 B2 JP 7032327B2
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Prior art keywords
slurry composition
weight
aluminum
abrasive
chemical
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Japanese (ja)
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JP2019522896A (ja
JP2019522896A5 (enExample
Inventor
へジョン パク
ジェヒョン キム
ジョンデ パク
ミンゴン イ
ジョンチョル シン
ソンフン チン
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Dongjin Semichem Co Ltd
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Dongjin Semichem Co Ltd
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018560761A 2016-05-19 2017-05-17 化学－機械的研磨用スラリー組成物 Active JP7032327B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20160061230 2016-05-19
KR10-2016-0061230 2016-05-19
PCT/KR2017/005118 WO2017200297A1 (ko) 2016-05-19 2017-05-17 화학-기계적 연마용 슬러리 조성물

Publications (3)

Publication Number Publication Date
JP2019522896A JP2019522896A (ja) 2019-08-15
JP2019522896A5 JP2019522896A5 (enExample) 2020-06-18
JP7032327B2 true JP7032327B2 (ja) 2022-03-08

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JP2018560761A Active JP7032327B2 (ja) 2016-05-19 2017-05-17 化学－機械的研磨用スラリー組成物

Country Status (6)

Country Link
US (2) US11001732B2 (enExample)
JP (1) JP7032327B2 (enExample)
KR (1) KR102450333B1 (enExample)
CN (1) CN109153889B (enExample)
TW (1) TWI736623B (enExample)
WO (1) WO2017200297A1 (enExample)

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WO2019189610A1 (ja) * 2018-03-30 2019-10-03 日揮触媒化成株式会社 シリカ粒子分散液、研磨組成物及びシリカ粒子分散液の製造方法
KR102709495B1 (ko) * 2018-12-31 2024-09-25 주식회사 동진쎄미켐 화학-기계적 연마 입자 및 이를 포함하는 연마 슬러리 조성물
CN118439623A (zh) * 2019-02-21 2024-08-06 三菱化学株式会社 二氧化硅粒子及其制造方法、硅烷醇基的测定方法、研磨组合物、研磨方法、半导体晶片的制造方法和半导体器件的制造方法
JP7576023B2 (ja) * 2019-03-27 2024-10-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および基板の製造方法
JP7356865B2 (ja) * 2019-10-30 2023-10-05 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法
JP7356864B2 (ja) * 2019-10-30 2023-10-05 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物、及び磁気ディスク基板の研磨方法
JP7716857B2 (ja) * 2020-03-23 2025-08-01 株式会社フジミインコーポレーテッド 研磨用組成物
JP7663369B2 (ja) * 2020-03-30 2025-04-16 株式会社フジミインコーポレーテッド 研磨用組成物
US11421132B2 (en) * 2020-03-30 2022-08-23 Fujimi Incorporated Polishing composition
US11180679B1 (en) 2020-05-27 2021-11-23 Skc Solmics Co., Ltd. Composition for semiconductor processing and method for polishing substrate using the same
WO2023007722A1 (ja) * 2021-07-30 2023-02-02 昭和電工マテリアルズ株式会社 研磨液及び研磨方法

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JP2007207907A (ja) 2006-01-31 2007-08-16 Fujifilm Corp 金属用研磨液、及びそれを用いた化学的機械的研磨方法
JP2007299942A (ja) 2006-04-28 2007-11-15 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法
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Also Published As

Publication number Publication date
JP2019522896A (ja) 2019-08-15
KR20170131247A (ko) 2017-11-29
KR102450333B1 (ko) 2022-10-04
US20190077993A1 (en) 2019-03-14
US11001732B2 (en) 2021-05-11
CN109153889B (zh) 2021-10-29
US20190077994A1 (en) 2019-03-14
CN109153889A (zh) 2019-01-04
WO2017200297A1 (ko) 2017-11-23
TW201811944A (zh) 2018-04-01
TWI736623B (zh) 2021-08-21

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