TWI785220B - 供使用在釕和銅材料的研磨組成物及用於從半導體元件研磨和移除釕的方法 - Google Patents
供使用在釕和銅材料的研磨組成物及用於從半導體元件研磨和移除釕的方法 Download PDFInfo
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- TWI785220B TWI785220B TW108109823A TW108109823A TWI785220B TW I785220 B TWI785220 B TW I785220B TW 108109823 A TW108109823 A TW 108109823A TW 108109823 A TW108109823 A TW 108109823A TW I785220 B TWI785220 B TW I785220B
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- acid
- composition
- ruthenium
- amount
- total weight
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052707 ruthenium Inorganic materials 0.000 title claims abstract description 50
- 239000010949 copper Substances 0.000 title claims abstract description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 46
- 238000005498 polishing Methods 0.000 title claims abstract description 11
- 239000000203 mixture Substances 0.000 title claims description 75
- 239000000463 material Substances 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 6
- 239000002253 acid Substances 0.000 claims abstract description 24
- -1 halogen alkyl benzotriazole Chemical compound 0.000 claims abstract description 24
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims abstract description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052736 halogen Inorganic materials 0.000 claims description 15
- 150000002367 halogens Chemical class 0.000 claims description 14
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 239000003112 inhibitor Substances 0.000 claims description 10
- 239000007800 oxidant agent Substances 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 9
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 6
- 239000002736 nonionic surfactant Substances 0.000 claims description 6
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 4
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 4
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- WHCCOSVDXKJRKC-UHFFFAOYSA-N 4-(chloromethyl)-2h-benzotriazole Chemical group ClCC1=CC=CC2=C1N=NN2 WHCCOSVDXKJRKC-UHFFFAOYSA-N 0.000 claims description 3
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 150000001735 carboxylic acids Chemical class 0.000 claims description 3
- MBKDYNNUVRNNRF-UHFFFAOYSA-N medronic acid Chemical compound OP(O)(=O)CP(O)(O)=O MBKDYNNUVRNNRF-UHFFFAOYSA-N 0.000 claims description 3
- NJDPBWLDVFCXNP-UHFFFAOYSA-N 2-cyanoethyl dihydrogen phosphate Chemical compound OP(O)(=O)OCCC#N NJDPBWLDVFCXNP-UHFFFAOYSA-N 0.000 claims description 2
- QPRDTPBULOXACE-UHFFFAOYSA-N C(C1=CC=CC=C1)P(O)(O)=O.C(C1=CC=CC=C1)P(O)(O)=O Chemical compound C(C1=CC=CC=C1)P(O)(O)=O.C(C1=CC=CC=C1)P(O)(O)=O QPRDTPBULOXACE-UHFFFAOYSA-N 0.000 claims description 2
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 2
- NKZJMRUNRRQYNW-UHFFFAOYSA-N S(=O)(=O)(O)C1=C2C=CC=NC2=C(C=C1)O.S(=O)(=O)(O)C1=C2C=CC=NC2=C(C=C1)O Chemical compound S(=O)(=O)(O)C1=C2C=CC=NC2=C(C=C1)O.S(=O)(=O)(O)C1=C2C=CC=NC2=C(C=C1)O NKZJMRUNRRQYNW-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 150000001413 amino acids Chemical class 0.000 claims description 2
- DQPBABKTKYNPMH-UHFFFAOYSA-N amino hydrogen sulfate Chemical compound NOS(O)(=O)=O DQPBABKTKYNPMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000002280 amphoteric surfactant Substances 0.000 claims description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- VHVSQKZXSKXABM-UHFFFAOYSA-N ethane-1,2-disulfonic acid Chemical compound S(=O)(=O)(O)CCS(=O)(=O)O.C(CS(=O)(=O)O)S(=O)(=O)O VHVSQKZXSKXABM-UHFFFAOYSA-N 0.000 claims description 2
- ZJXZSIYSNXKHEA-UHFFFAOYSA-N ethyl dihydrogen phosphate Chemical compound CCOP(O)(O)=O ZJXZSIYSNXKHEA-UHFFFAOYSA-N 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- LNZGAWGNDIUUEU-UHFFFAOYSA-N hexylphosphonic acid Chemical compound C(CCCCC)P(O)(O)=O.C(CCCCC)P(O)(O)=O LNZGAWGNDIUUEU-UHFFFAOYSA-N 0.000 claims description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- DTSWMPOYOLBKHE-UHFFFAOYSA-N phenylphosphonic acid Chemical compound OP(O)(=O)C1=CC=CC=C1.OP(O)(=O)C1=CC=CC=C1 DTSWMPOYOLBKHE-UHFFFAOYSA-N 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- MAGFQRLKWCCTQJ-UHFFFAOYSA-N 4-ethenylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-N 0.000 claims 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims 1
- 239000013543 active substance Substances 0.000 claims 1
- VEBPVDQCICDRRD-UHFFFAOYSA-N aminomethanesulfonic acid Chemical compound NCS(=O)(=O)O.NCS(=O)(=O)O VEBPVDQCICDRRD-UHFFFAOYSA-N 0.000 claims 1
- 239000003945 anionic surfactant Substances 0.000 claims 1
- WWIWLTSSHDKOKO-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1.OS(=O)(=O)C1=CC=CC=C1 WWIWLTSSHDKOKO-UHFFFAOYSA-N 0.000 claims 1
- 239000003093 cationic surfactant Substances 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- KAXPDJPPUONVPD-UHFFFAOYSA-N ethenyl dihydrogen phosphate Chemical compound C(=C)OP(O)(O)=O.C(=C)OP(O)(O)=O KAXPDJPPUONVPD-UHFFFAOYSA-N 0.000 claims 1
- WRDZMZGYHVUYRU-UHFFFAOYSA-N n-[(4-methoxyphenyl)methyl]aniline Chemical compound C1=CC(OC)=CC=C1CNC1=CC=CC=C1 WRDZMZGYHVUYRU-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- IGWVGZGWFYIWBB-UHFFFAOYSA-N phenyl dihydrogen phosphate Chemical compound C1(=CC=CC=C1)OP(=O)(O)O.C1(=CC=CC=C1)OP(=O)(O)O IGWVGZGWFYIWBB-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000002002 slurry Substances 0.000 abstract description 50
- 239000012964 benzotriazole Substances 0.000 abstract description 11
- 150000002366 halogen compounds Chemical class 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 2
- 229910001854 alkali hydroxide Inorganic materials 0.000 abstract 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 239000003623 enhancer Substances 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 150000001923 cyclic compounds Chemical class 0.000 description 2
- 239000013530 defoamer Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RKMOGOGTQIHYMN-UHFFFAOYSA-N 4-(2-methylphenyl)-2h-benzotriazole Chemical compound CC1=CC=CC=C1C1=CC=CC2=NNN=C12 RKMOGOGTQIHYMN-UHFFFAOYSA-N 0.000 description 1
- BUOLWKSFADWMOX-UHFFFAOYSA-N 5-chloro-4-methyl-2h-benzotriazole Chemical compound CC1=C(Cl)C=CC2=NNN=C12 BUOLWKSFADWMOX-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical class [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- NNRFDISHKGCQLV-UHFFFAOYSA-N CC1=C(C=CC(=C1)C)S(=O)(=O)O.CC1=C(C=CC(=C1)C)S(=O)(=O)O Chemical compound CC1=C(C=CC(=C1)C)S(=O)(=O)O.CC1=C(C=CC(=C1)C)S(=O)(=O)O NNRFDISHKGCQLV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VNQABZCSYCTZMS-UHFFFAOYSA-N Orthoform Chemical compound COC(=O)C1=CC=C(O)C(N)=C1 VNQABZCSYCTZMS-UHFFFAOYSA-N 0.000 description 1
- 229940123973 Oxygen scavenger Drugs 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- OBESRABRARNZJB-UHFFFAOYSA-N aminomethanesulfonic acid Chemical compound NCS(O)(=O)=O OBESRABRARNZJB-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 125000002648 azanetriyl group Chemical group *N(*)* 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BNKAXGCRDYRABM-UHFFFAOYSA-N ethenyl dihydrogen phosphate Chemical compound OP(O)(=O)OC=C BNKAXGCRDYRABM-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- CMPQUABWPXYYSH-UHFFFAOYSA-N phenyl phosphate Chemical compound OP(O)(=O)OC1=CC=CC=C1 CMPQUABWPXYYSH-UHFFFAOYSA-N 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000011885 synergistic combination Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Substances [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
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Abstract
一種用於研磨至少部分地含有釕和銅的表面或基體的漿料,其中該漿料包括一鹼金屬氫氧化物、經氧化的鹵素化合物,以及一鹵烷基苯并三唑。該漿料可進一步包括磨料、酸,以及,選擇性地,一烷氧基化醇。具有這些組分,該漿料展現出一高的釕比銅移除率比。
Description
這個申請案主張於2018年3月28日所提申的美國臨時專利申請案第62/649,324號的優先權,其在此以它的整體被併入本案以做為參考資料。
本揭示提供有利於在一相對於銅的高選擇性下研磨釕材料的化學機械研磨(CMP)漿料。特別地,本揭示的CMP漿料包含有部分地一氫氧化物pH調節劑、一經氧化的鹵素化合物(其可以是一全鹵化物(perhalogenate)或一鹵素過氧酸(halogen peroxy acid))以及一鹵烷基苯并三唑的一協同組合。
在半導體工業的後段製程(back-end-of-line,BEOL)應用中,釕通常被使用作為一襯料。不像一些其他
材料(諸如鈷),釕相對地化學安定的並且因此不會變質。它亦具有有利的沉積性質。然而,在CMP製程的期間釕可是難以移除。進一步,釕通常被使用在綴合銅,銅是一相對軟性的材料並且因此易於移除。銅對於許多半導體元件的功能是必要的,因此若一CMP漿料被使用而太容易剝離或損害銅層或嵌體,它可不利地影響完成的元件的性能。
有一關於一種平衡在足夠高的速率下移除釕同時仍然在相同的半導體元件中保護任何銅的能力的CMP組合物的需要。
在一具體例中,本揭示提供一種包含有一鹼金屬氫氧化物、一經氧化的鹵素化合物(例如,一全鹵化物或一鹵素過氧酸)和一鹵烷基苯并三唑的一組合的CMP漿料。該漿料亦可包含有磨料、酸、安定劑,以及移除率增強劑。
在另一個方面,在此所揭示的具體例有關於供使用在釕和銅材料的研磨漿料濃縮物,其包括:一鹼金屬氫氧化物;一經氧化的鹵素;一鹵烷基苯并三唑;一磨料;以及一酸,其中該漿料展現一大於約1.2的釕比銅的研磨選擇性比值。
在又另一個方面,在此所揭示的具體例有關於供使用在釕和銅材料的研磨漿料濃縮物,其包括:氫氧化鉀,呈以該漿料的總重量計一約0.01wt%至約10wt%
的數量存在;過碘酸氫(hydrogen periodate),呈以該漿料的總重量計一約0.01wt%至約10wt%的數量存在;氯甲基苯并三唑(chloro methyl benzotriazole),呈以該漿料的總重量計一約0.001wt%至約10wt%的數量存在;二氧化矽(silica),呈以該漿料的總重量計一約0.01wt%至約12wt%的數量存在;以及丙二酸,呈以該漿料的總重量計一約0.01wt%至約10wt%的數量存在,其中該漿料展現一大於2.5的釕比銅的研磨選擇性比值。
在又另一個方面,在此所揭示的具體例有關於供使用在釕和銅材料的研磨漿料濃縮物,其包括:一pH調節劑;一釕氧化劑;一銅腐蝕抑制劑;一磨料;以及一移除率增強劑,其中該漿料展現一大於約1.2的釕比銅的研磨選擇性比值。
在又另一個方面,在此所揭示的具體例有關於用於從一半導體元件研磨和移除釕的方法,其包括:施加一化學機械研磨漿料濃縮物至該分層的半導體元件,該漿料包括:一pH調節劑;一釕氧化劑;一銅腐蝕抑制劑;一磨料;以及一移除率增強劑,其中該漿料展現一大於約1.2的釕比銅的研磨選擇性比值;以及以一旋轉研磨墊研磨該半導體元件。
圖1顯示各種不同的材料的移除率作為在本揭示的漿料中的釕氧化劑的數量的一函數的一圖。
本揭示的CMP漿料解決在一令人滿意的高速率下從一分層的半導體元件研磨和移除釕材料,同時仍然保護在該元件上的任何銅層的問題。換句話說,本CMP漿料顯示一相對於銅的用於研磨釕的高選擇性。本揭示的CMP漿料包含有一鹼金屬氫氧化物(諸如氫氧化鉀)、一經氧化的鹵素化合物(諸如過碘酸鹽)和一鹵烷基苯并三唑(諸如氯甲基苯并三唑(CMBTA))的一組合。如下面更詳細討論的,當相較於銅時,這些CMP漿料在研磨釕中展現一高的移除率和選擇性,例如1.2或更高、2.5或更高,以及3.0和更高的選擇性。
這些有利的選擇性比值根據個別組分它們自己的性質是無法預測的。如下面更詳細討論的,具有單獨的苯并三唑(BTA)或甚至烷基苯并三唑化合物的組成物具有比較地低的釕比銅的選擇性。只有以鹵素基團的添加,如在本揭示的鹵烷基苯并三唑中,釕比銅的選擇性顯著地增加。不受理論束縛,被相信的是:該鹵素基團使該等鹵烷基苯并三唑化合物更安定,並且因此它們不像BTA或烷基苯并三唑一樣快速地氧化。鹵素亦可使鹵烷基苯并三唑分子更大,並且因此增加在被研磨的基體上的鈍化層的厚度。該鈍化層因此變得更疏水性,這使它能夠阻斷在水中存在的蝕刻或腐蝕性化學品穿過該層,並且更佳地保護任何銅表面。
本揭示的鹵烷基苯并三唑作為一用於銅的
腐蝕抑制劑。在這個化合物中的鹵素可以是來自已知鹵素類的任一者,諸如但不限於氯、溴或碘。該烷基基團可以是甲基、乙基、丙基、異丙基、丁基、異丁基,或它們的任何組合。該烷基基團亦可以是具有自1至12個碳的碳鏈的一或多者。在一具體例中,該化合物是氯-甲基-苯并三唑(CMBTA)。該鹵烷基苯并三唑化合物可呈以該漿料的總重量計一為0.001wt%至10wt%或其間的任何子範圍的數量存在。該鹵烷基苯并三唑化合物亦可呈以該漿料的總重量計一為0.001wt%至1wt%或其間的任何子範圍的數量存在。鹵烷基苯并三唑的數量應該藉由平衡下列考量而被設定。如下面更詳細討論的,更多的該化合物將導致一更高的釕比銅選擇性研磨比。然而,當太多的鹵烷基苯并三唑被使用時,它可在被研磨的晶片的表面上留下殘餘物,這是非所欲的。
本揭示的經氧化的鹵素化合物作為一用於釕的氧化劑。當氧化釕被形成時,它可藉由磨料的機械作用而被移除。鹵素可以是來自已知族群的任一者,諸如但不限於碘、溴,或氯。在一具體例中,該經氧化的鹵素化合物是過碘酸氫,其具有化學式HIO4(間位形式)或H5IO6(鄰位形式)。其他適合的化合物包括溴酸氫(hydrogen bromate)或氯酸氫(hydrogen chlorate)。該經氧化的鹵素化合物可呈以該漿料的總重量計一為0.01wt%至10wt%或其間的任何子範圍的數量存在。該經氧化的鹵素化合物亦可呈以該漿料的總重量計一為0.01wt%至1wt%或其間
的任何子範圍的數量存在。
鹼金屬氫氧化物可在該漿料中作為一pH調節劑。關於漿料性能的pH的重要性在下面被更詳細地討論。該鹼金屬可以是來自已知的鹼金族的任一者。在一具體例中,該鹼金屬氫氧化物是氫氧化鉀。該鹼金屬氫氧化物可呈以該漿料的總重量計一為0.01wt%至10wt%或其間的任何子範圍的數量存在。該鹼金屬氫氧化物亦可呈以該漿料的總重量計一為0.01wt%至1wt%或其間的任何子範圍的數量存在。
本揭示的漿料亦包括磨料。該等磨料可選自於由氧化鋁(alumina)、二氧化矽、氧化鈦(titania)、氧化鈰(ceria)、氧化鋯(zirconia)、它們的共-形成產物,或它們的混合物所構成的群組。該磨料可呈以該漿料的總重量計一為0.01wt%至12wt%或其間的任何子範圍的數量存在。該磨料亦可呈以該漿料的總重量計一為0.01wt%至6wt%或其間的任何子範圍的數量存在。
本揭示的漿料亦包括至少一酸,它可作為一移除率增強劑。在一或多個具體例中,本揭示的酸可選自於羧酸或複數個羧酸的混合物的群組。在一或多個具體例中,該酸亦可以是胺基酸、有機或無機磺酸、有機或無機磷酸以及有機膦酸的一或多者。有機磺酸的實例包括1,2-乙二磺酸(1,2-ethanedisulfonic acid)、4-胺基-3-羥基-1-萘磺酸(4-amino-3-hydroxy-1-naphthalenesulfonic acid)、8-羥基喹啉-5-磺酸(8-hydroxyquinoline-5-sulfonic
acid)、胺基甲磺酸(aminomethanesulfonic acid)、苯磺酸(benzenesulfonic acid)、胲磺酸鹽(hydroxylamine O-sulfonic acid)、甲磺酸(methanesulfonic acid)、間-二甲苯-4-磺酸(m-xylene-4-sulfonic acid)、聚(4-苯乙烯磺酸)(poly(4-styrenesulfonic acid))、聚茴香腦磺酸(polyanetholesulfonic acid)、對-甲苯磺酸(P-toluenesulfonic acid),以及三氟甲烷-磺酸(trifluoromethane-sulfonic acid)。有機磷酸的實例包括乙基磷酸(ethyl phosphoric acid)、氰乙基磷酸(cyanoethyl phosphoric acid)、苯基磷酸(phenyl phosphoric acid)以及乙烯基磷酸(vinyl phosphoric acid)。有機膦酸的實例包括聚(乙烯基膦酸)(poly(vinylphosphonic acid))、1-羥基乙烷-1,1-二膦酸(1-hydroxyethane-1,1-diphosphonic acid)、次氮基三(甲基膦酸)(nitrilotri(methylphosphonic acid))、二伸乙基三胺五(甲基膦酸)(diethylenetriaminepentakis(methylphosphonic acid))、N,N,N'N'-乙二胺肆(亞甲基膦酸)(N,N,N'N'-ethylenediaminetetrakis(methylene phosphonic acid))、n-己基膦酸(n-hexylphosphonic acid)、苄基膦酸(benzylphosphonic acid)以及苯基膦酸(phenylphosphonic acid)。在更特別的具體例中,該酸可以是選自於包括丙二酸、丙酸、有機磺酸或它們的混合物的群組的至少一者。該酸可呈以該漿料的總重量計一為0.01wt%至10wt%或其間的任何子範圍的數量存在。該
酸亦可呈以該漿料的總重量計一為0.01wt%至1wt%或其間的任何子範圍的數量存在。
在一或多個具體例中,本揭示的漿料亦可包括一界面活性劑,它可作為一低-K移除率抑制劑。在一或多個具體例中,該漿料可包括一陽離子、陰離子、非-離子、兩性界面活性劑,或它們的一混合物。在更特別的具體例中,該組成物包括一非-離子界面活性劑。在一或多個具體例中,該非-離子界面活性劑可以是一包括一疏水部分和一烷氧基化醇部分的烷氧基化醇非-離子界面活性劑。在一些具體例中,該非-離子界面活性劑的該烷氧基化醇部分可包括環氧乙烷基團、環氧丙烷基團,或它們的混合物。在一些具體例中,該非離子部分的疏水部分可包括一含有自3至20個碳或其間的任何子範圍的直鏈或支鏈烴基團。當存在時,該界面活性劑可呈以該漿料的總重量計一為0.01wt%至10wt%或其間的任何子範圍的數量存在。該界面活性劑亦可呈以該漿料的總重量計一為0.01wt%至1wt%或其間的任何子範圍的數量存在。
在一或多個具體例中,該漿料的pH可在自5至11、或自6至11,或其間的任何子範圍的範圍內。然而,該漿料的pH被設定在一鹼性範圍可能是有益的,因為這個可導致銅的一低移除率。因此,在一些具體例中,該pH可以是自7至11或其間的任何子範圍,或者自8.5至10.5或其間的任何子範圍。
本揭示的一般漿料組成物被概述在下面的
表1。
在一或多個具體例中,本揭示的漿料可包括小於1%、或小於0.1%以重量計的未被列在表1並且先前被描述在本申請案關於各個組分的其他添加劑/組分。在一或多個具體例中,本揭示的漿料僅由在表1所列出並且先前被描述在本申請案關於各個組分的組分以及水所組成。例如,在一些具體例中,本揭示的漿料可特定地排除一或多個下列添加劑組分,或它們的任何組合。此等組分選自於由下列所構成的群組:具有一大於1000g/mol,或在一些具體例中大於2000g/mol的分子量的聚合物、氧清除劑、四級銨鹽(包括四級銨氫氧化物(諸如TMAH))、胺、鹼(諸如NaOH和LiOH)、除了一消泡劑以外的界面活性劑、一消泡劑、含氟化合物、矽酸鹽、含有超過2個羥基基團的羥基羧酸、缺少胺基基團的羧酸和多羧酸、矽烷(silanes)(例如,烷氧基矽烷(alkoxysilanes))、環狀化合物(例如,非-鹵化唑(諸如二唑、三唑或四唑)、三
(triazines)和含有至少2個環的環狀化合物(諸如經取代的或未經取代的萘、或經取代的或未經取代的聯苯醚(biphenylethers))、緩衝劑、非-唑腐蝕抑製劑,以及金屬鹽(例如金屬鹵化物)。
實施例被提供以進一步例示說明本揭示的研磨組成物和方法的能力。被提供的實施例不意欲並且應該不被解釋為限制本揭示的範疇。
對於所有實施例,一Applied Materials Mirra CMP研磨器以一為1.5psi的下壓力和一為175mL/min的流速而被使用以研磨SKW CVD Ru晶片。
下面的表2顯示關於各種不同的研磨組成物的銅、鉭、釕(經由化學氣相沉積(或CVD)而被沉積)、四-乙基-原-矽酸鹽(tetra-ethyl-ortho-silicate,TEOS)和Black Diamond®(它是一碳摻雜的CVD二氧化矽(BD1))的移除率數據。CMBTA的數量被改變以顯示數量如何影響釕比銅研磨率選擇性。亦有包括BTA和甲基苯并三唑的比較實例組成物,其例示說明:本揭示的鹵烷基苯并三唑(在這個例子CMBTA)戲劇性地改善釕比銅選擇性。
所有組成物具有相同數量的鹼金屬氫氧化物(KOH)、酸(丙二酸)、磨料(二氧化矽),以及經氧化的鹵素(過碘酸鹽)。pH值亦大致相等。CMBTA的數量被變化。如在數據中所顯示的,對照組成物沒有任何種類的BTA。具有這個組成物的釕的移除率是高的或至少令人滿意的,其他材料的移除率也是如此。然而,在對照組成物中沒有任何CMBTA,沒有東西保護銅。在對照中銅的移
除率是相對地非常高的,並且釕比銅選擇性是因此非常差的(小於1)。
相反地,在Ex 1至Ex 4中,CMBTA的數量越高,關於銅的移除率越低,而釕移除率維持相對地恆定,導致更好的釕比銅選擇性。這個是一個令人驚訝的結果,因為包括BTA(CE 1)和甲基苯并三唑(CE 2)代替CMBTA的組成物亦被顯示幾乎不能保護銅。例如,Ex 3、CE 1和CE 2各個分別具有600百萬分率的CMBTA、BTA和甲基苯并三唑。如上面所注意到的,所有其他值是相同的。然而,具有BTA的CE 1在一幾乎Ex 3所具者4倍的速率下移除銅。具有甲基苯并三唑的CE 2在一超過Ex 3所具者2倍的速率下移除銅。顯然地,CMBTA要比非-鹵化的苯并三唑化合物更好地保護銅,這是沒有預期到的。CMBTA亦不會顯著地不利地影響其他基體(例如,Ta、TEOS和BD1)的移除率,並且事實上在一些例子中改善移除率。
表3顯示更多數據例示說明本揭示的漿料的新穎和意想不到的效用。在下面所顯示的7個組成物中,CMBTA再次與BTA和甲基苯并三唑相比較。釕氧化劑、經氧化的鹵素的數量亦被變化。
Ex 6、CE 3和CE 4顯示與上面在表2中所描述者相似的結果,除了在250百萬分率而不是600。那就是,CMBTA要比BTA或甲基苯并三唑更好地保護銅,並且不會不利地影響釕移除率。
Ex 7至Ex 10顯示關於改變釕氧化劑過碘酸鹽的數量的移除率數據。在較高數量的過碘酸鹽下釕的移除率非常高,而銅的移除率維持低的或甚至下降。這個數據被圖示地顯示在圖1中。
雖然本揭示已參考一或多個示範性具體例而被描述,那些熟習此技藝者所瞭解的是:各種不同的變化可被做出並且等效物可代替其要素而沒有背離本揭示的範疇。此外,許多修改可被做出以使一特定情況或材料適應本揭示的教示而沒有背離它們的範疇。因此,被意欲的是:本揭示不限於如預期的最佳模式所揭示的特定具體例,而是本揭示將包括落在隨文檢附的申請專利範圍的範疇內的所有具體例。
Claims (33)
- 一種供使用在釕和銅材料的研磨組成物,其包含有:一鹼金屬氫氧化物;一經氧化的鹵素,其中該經氧化的鹵素包含有至少一選自於由下列所構成的群組的鹵素:碘、溴、氯,以及它們的任何組合,且其中該經氧化的鹵素是呈以該組成物的總重量計一約0.1wt%至約10wt%的數量存在;一鹵烷基苯并三唑,其是呈以該組成物的總重量計一約0.001wt%至約10wt%的數量存在;一磨料;以及一酸,其中該組成物展現一大於約1.2的釕比銅的研磨選擇性比值。
- 如請求項1的組成物,其中該鹼金屬氫氧化物是氫氧化鉀。
- 如請求項1的組成物,其中該鹼金屬氫氧化物是呈以該組成物的總重量計一約0.01wt%至約10wt%的數量存在。
- 如請求項3的組成物,其中該鹼金屬氫氧化物是呈以該組成物的總重量計一約0.01wt%至約1wt%的數量存在。
- 如請求項1的組成物,其中該經氧化的鹵素是過碘酸(hydrogen periodate)。
- 如請求項1的組成物,其中該鹵烷基苯并三唑包含有至少一選自於由下列所構成的群組的鹵素:碘、溴、氯,以及它們的任何組合。
- 如請求項1的組成物,其中在該鹵烷基苯并三唑中的烷基是選自於甲基、乙基、丙基、異丙基、丁基、異丁基,或它們的任何組合的一者。
- 如請求項1的組成物,其中該鹵烷基苯并三唑是氯甲基苯并三唑。
- 如請求項1的組成物,其中該磨料是選自於由下列所構成的群組的至少一者:氧化鋁(alumina)、二氧化矽(silica)、氧化鈦(titania)、氧化鈰(ceria)、氧化鋯(zirconia)、它們的共-形成產物,以及它們的任何組合。
- 如請求項9的組成物,其中該磨料是二氧化矽。
- 如請求項10的組成物,其中該磨料是呈以該組成物的總重量計一約0.01wt%至約12wt%的數量存在。
- 如請求項11的組成物,其中該磨料是呈以該組成物的總重量計一約0.01wt%至約6wt%的數量存在。
- 如請求項1的組成物,其中該酸是至少一選自於由下列所構成的群組的酸:羧酸、胺基酸、磺酸、磷酸、膦酸,以及它們的任何組合。
- 如請求項13的組成物,其中該磺酸是 至少一選自於由下列所構成的群組的有機磺酸:1,2-乙二磺酸(1,2-ethanedisulfonic acid)、4-胺基-3-羥基-1-萘磺酸(4-amino-3-hydroxy-1-naphthalenesulfonic acid)、8-羥基喹啉-5-磺酸(8-hydroxyquinoline-5-sulfonic acid)、胺基甲磺酸(aminomethanesulfonic acid)、苯磺酸(benzenesulfonic acid)、胲磺酸鹽(hydroxylamine o-sulfonic acid)、甲磺酸(methanesulfonic acid)、間-二甲苯-4-磺酸(m-xylene-4-sulfonic acid)、聚(4-苯乙烯磺酸)(poly(4-styrenesulfonic acid))、聚茴香腦磺酸(polyanetholesulfonic acid)、對-甲苯磺酸(p-toluenesulfonic acid),以及三氟甲烷-磺酸(trifluoromethane-sulfonic acid)。
- 如請求項13的組成物,其中該磷酸是至少一選自於由下列所構成的群組的有機磷酸:乙基磷酸(ethyl phosphoric acid)、氰乙基磷酸(cyanoethyl phosphoric acid)、苯基磷酸(phenyl phosphoric acid)以及乙烯基磷酸(vinyl phosphoric acid)。
- 如請求項13的組成物,其中該膦酸是至少一由下列構成的有機膦酸:聚(乙烯基膦酸)(poly(vinylphosphonic acid))、1-羥基乙烷-1,1-二膦酸(1-hydroxyethane-1,1-diphosphonic acid)、次氮基三(甲基膦酸)(nitrilotri(methylphosphonic acid))、二伸乙基三胺五(甲基膦酸)(diethylenetriaminepentakis(methylphosphonic acid))、N,N,N'N'-乙二胺肆(亞甲基 膦酸)(N,N,N'N'-ethylenediaminetetrakis(methylene phosphonic acid))、n-己基膦酸(n-hexylphosphonic acid)、苄基膦酸(benzylphosphonic acid)以及苯基膦酸(phenylphosphonic acid)。
- 如請求項1的組成物,其中該酸是至少一選自於由下列所構成的群組的酸:丙二酸、丙酸、一有機磺酸,以及它們的任何組合。
- 如請求項1的組成物,其中該酸是呈以該組成物的總重量計一約0.01wt%至約10wt%的數量存在。
- 如請求項1的組成物,其中該酸是呈以該組成物的總重量計一約0.01wt%至約1wt%的數量存在。
- 如請求項1的組成物,其進一步包含有一低-K移除率抑制劑。
- 如請求項20的組成物,其中該低-K移除率抑制劑是一界面活性劑。
- 如請求項21的組成物,其中該界面活性劑是至少一選自於由下列所構成的群組的界面活性劑:陽離子界面活性劑、陰離子界面活性劑、非-離子界面活性劑,以及兩性界面活性劑。
- 如請求項22的組成物,其中該界面活性劑是一烷氧基化醇非-離子界面活性劑。
- 如請求項23的組成物,其中該界面活 性劑是呈以該組成物的總重量計一約0.01wt%至約10wt%的數量存在。
- 如請求項24的組成物,其中該界面活性劑是呈以該組成物的總重量計一約0.01wt%至約1wt%的數量存在。
- 如請求項1的組成物,其中該組成物的pH是自約5至約11。
- 如請求項26的組成物,其中該組成物的pH是自約7至約11。
- 如請求項1的組成物,其中該組成物展現一大於2.5的釕比銅的研磨選擇性比值。
- 一種供使用在釕和銅材料的研磨組成物,其包含有:氫氧化鉀,呈以該組成物的總重量計一約0.01wt%至約10wt%的數量存在;過碘酸,呈以該組成物的總重量計一約0.1wt%至約10wt%的數量存在;氯甲基苯并三唑,呈以該組成物的總重量計一約0.001wt%至約0.08wt%的數量存在;二氧化矽,呈以該組成物的總重量計一約0.01wt%至約12wt%的數量存在;以及丙二酸,呈以該組成物的總重量計一約0.01wt%至約10wt%的數量存在,其中該組成物展現一大於約2.5的釕比銅的研磨選擇 性比值。
- 一種供使用在釕和銅材料的研磨組成物,其包含有:一pH調節劑;一釕氧化劑,其中該釕氧化劑包含有至少一選自於由下列所構成的群組的鹵素:碘、溴、氯,以及它們的任何組合,且其中該釕氧化劑是呈以該組成物的總重量計一約0.1wt%至約10wt%的數量存在;一銅腐蝕抑制劑,其包含呈以該組成物的總重量計一約0.001wt%至約0.08wt%的數量存在的鹵烷基苯并三唑;一磨料;以及一酸,其中該組成物展現一大於約1.2的釕比銅的研磨選擇性比值。
- 如請求項30的研磨組成物,其進一步包含有一低-K移除率抑制劑。
- 一種用於從一半導體元件研磨和移除釕的方法,其包含有:施加如請求項1之組成物至該半導體元件;以及以一旋轉研磨墊研磨該半導體元件。
- 如請求項32的方法,其中該組成物進一步包含有一低-K移除率抑制劑。
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- 2019-03-22 CN CN201910221524.6A patent/CN110317539B/zh active Active
- 2019-03-28 KR KR1020190035905A patent/KR102256067B1/ko active IP Right Grant
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CN110317539A (zh) | 2019-10-11 |
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EP3775076A4 (en) | 2021-12-22 |
JP7209004B2 (ja) | 2023-01-19 |
EP3775076A2 (en) | 2021-02-17 |
US20190300749A1 (en) | 2019-10-03 |
TW201942275A (zh) | 2019-11-01 |
KR102398809B1 (ko) | 2022-05-18 |
CN110317539B (zh) | 2021-11-30 |
WO2019190730A2 (en) | 2019-10-03 |
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