JP4681261B2 - 半導体層を研磨するための組成物 - Google Patents
半導体層を研磨するための組成物 Download PDFInfo
- Publication number
- JP4681261B2 JP4681261B2 JP2004228852A JP2004228852A JP4681261B2 JP 4681261 B2 JP4681261 B2 JP 4681261B2 JP 2004228852 A JP2004228852 A JP 2004228852A JP 2004228852 A JP2004228852 A JP 2004228852A JP 4681261 B2 JP4681261 B2 JP 4681261B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing composition
- removal rate
- teos
- chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 claims description 29
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- 230000007797 corrosion Effects 0.000 claims description 8
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
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- 125000000217 alkyl group Chemical group 0.000 description 5
- 230000001143 conditioned effect Effects 0.000 description 5
- BJFLSHMHTPAZHO-UHFFFAOYSA-N benzotriazole Chemical compound [CH]1C=CC=C2N=NN=C21 BJFLSHMHTPAZHO-UHFFFAOYSA-N 0.000 description 4
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 description 4
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- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 150000003893 lactate salts Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229940039748 oxalate Drugs 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical class OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical group 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003567 thiocyanates Chemical class 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- USFMMZYROHDWPJ-UHFFFAOYSA-N trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium Chemical compound CC(=C)C(=O)OCC[N+](C)(C)C USFMMZYROHDWPJ-UHFFFAOYSA-N 0.000 description 1
- VZTGWJFIMGVKSN-UHFFFAOYSA-O trimethyl-[3-(2-methylprop-2-enoylamino)propyl]azanium Chemical compound CC(=C)C(=O)NCCC[N+](C)(C)C VZTGWJFIMGVKSN-UHFFFAOYSA-O 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明は、配線金属の除去を制限するための腐食インヒビターと、酸性pHと、式:
アンモニウム塩が、酸性pHレベルで、酸化ケイ素含有層、例えばTEOS層の除去速度の制御を容易にし、これによって酸化ケイ素含有材料の除去速度を制御し得ることが見い出された。このアンモニウム塩は、以下の構造:
(例1)
PL150H25は、Clariantからのコロイダルシリカであり、25nmの平均粒径を有するシリカ粒子30重量%を有する。
この例は、高いTEOS除去速度が、TBAFを添加したスラリー中のフッ化物イオンによって生じるのではないことをさらに明らかにするために行った。例において、比較組成物H、I及びJは、フッ化物イオンを含む。フッ化物イオンはフッ化アンモニウム(NH4F)の形態で研磨組成物に添加した。例1において述べたように、比較組成物Aは、対照となる配合を含有し、フッ化物イオンを含有しない。研磨組成物は、試料番号10で表され、テトラブチルアンモニウムフッ化物を含有する。研磨条件は、例1と同様であった。配合を表2に示す。
この例は、集積回路のTEOSマスクの除去速度についての異なるイオンの効果を決定するために行った。Applied Materialsによって供給されるMirraモデル研磨装置を用いて、研磨実験を行なった。研磨パッドは、Rodel,Inc.によって供給されるPolitex(商標)パッドであった。このパッドを各運転の前にコンディショニングした。研磨プロセスを、膜圧10.33kPa(1.5psi)、テーブル速度93回転/分(rpm)及びキャリア速度87rpmで行なった。研磨組成物の供給速度は180ミリリットル/分であった。
この例は、他のアンモニウム塩、例えばベンジルトリブチルアンモニウム塩化物(BTBAC)、ベンジルトリメチルアンモニウム塩化物(BTMAC)、ベンジルトリエチルアンモニウム塩化物(BTEAC)の有用性を明らかにするために行った。試料Aは、対照となる配合を表し、一方、BTBACを含有する試料23〜25、BTMACを含有する試料26〜28、及びBTEACを含有する試料29〜30は、研磨組成物を表す。
この例は、部分的に水素置換されたアンモニウム塩、例えばトリエチレンテトラミン、テトラメチルグアニジン及びヘキシルアミンの有用性を明らかにするために行った。試料Aは、比較の対照となる配合を表し、一方、トリエチレンテトラミンを含有する試料31〜32、テトラメチルグアニジンを含有する試料33〜34、ヘキシルアミンを含有する試料35〜36、及びTBANを含有する試料37は、研磨組成物を表す。
Applied Materialsによって供給されるMirra型式研磨装置上で、この実験を行なった。研磨パッドは、Rodel,Inc.によって供給されるIC1010(商標)であった。このパッドを各運転の前にコンディショニングした。研磨プロセスを、圧力10.3kPa(1.5psi)、テーブル速度93回転/分(rpm)及びキャリア速度87rpmで行なった。CMP組成物の供給速度(スラリー流速)は、200ミリリットル/分(ml/min)であった。欠陥試験のための銅シートウェーハを、CUP4410パッド(Rodel,Inc.によって供給される)で、3psi、テーブル速度93rpm、キャリア速度87rpm及びスラリー流速200ml/minのプロセスパラメーターを用いて、市販のスラリーEPL2362(Eternal)によって1分間予備研磨した。この工程は、新しい銅表面を作成するためのものであった。次いで、予備研磨された銅シートウェーハを、スラリー組成物16及び従来のアルカリ性スラリーによって研磨した。
Claims (3)
- シリカ砥粒0.05〜15重量%と、
酸化剤0〜10重量%と、
ベンゾトリアゾール腐食インヒビター0.25〜1重量%と、
テトラエチルアンモニウム硝酸塩、テトラブチルアンモニウム硝酸塩、テトラブチルアンモニウムフッ化物、テトラエチルアンモニウムフッ化物、ベンジルトリブチルアンモニウム塩化物、ベンジルトリメチルアンモニウム塩化物、ベンジルトリエチルアンモニウム塩化物、ジアリルジメチルアンモニウム塩化物、ジアリルジエチルアンモニウム塩化物、テトラペンチルアンモニウム水酸化物、ジエチルアミノエチルメタクリレート、ジメチルアミノエチルメタクリレート、メタクリロイルオキシエチルトリメチルアンモニウム硫酸塩、メタクリロイルオキシエチルトリメチルアンモニウム塩化物、3−(メタクリルアミド)プロピルトリメチルアンモニウム塩化物、トリエチレンテトラミン、テトラメチルグアニジン及びヘキシルアミンから選択される1種以上の化合物0.001〜3重量%と
を含み、
硝酸、硫酸、塩酸、リン酸又はそれらの混合物を用いて2〜5の範囲に調整されたpHを有する、
TaNを含むバリア層除去用の水性研磨組成物。 - 酸化剤が過酸化水素を含む、請求項1記載の水性研磨組成物。
- 前記pHが2〜3である、請求項1又は2記載の水性研磨組成物。
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US10/634,437 US7018560B2 (en) | 2003-08-05 | 2003-08-05 | Composition for polishing semiconductor layers |
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DE602004012674D1 (de) | 2008-05-08 |
KR20050016128A (ko) | 2005-02-21 |
TWI365907B (en) | 2012-06-11 |
CN1609156B (zh) | 2012-03-28 |
KR101092939B1 (ko) | 2011-12-12 |
US7018560B2 (en) | 2006-03-28 |
JP2005101545A (ja) | 2005-04-14 |
DE602004012674T2 (de) | 2009-04-09 |
EP1505133B1 (en) | 2008-03-26 |
EP1505133A1 (en) | 2005-02-09 |
TW200513523A (en) | 2005-04-16 |
CN1609156A (zh) | 2005-04-27 |
US20050031789A1 (en) | 2005-02-10 |
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