CN110317539B - 阻挡物钌的化学机械抛光浆料 - Google Patents
阻挡物钌的化学机械抛光浆料 Download PDFInfo
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- CN110317539B CN110317539B CN201910221524.6A CN201910221524A CN110317539B CN 110317539 B CN110317539 B CN 110317539B CN 201910221524 A CN201910221524 A CN 201910221524A CN 110317539 B CN110317539 B CN 110317539B
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052707 ruthenium Inorganic materials 0.000 title claims abstract description 50
- 238000005498 polishing Methods 0.000 title claims abstract description 33
- 239000002002 slurry Substances 0.000 title abstract description 56
- 239000000126 substance Substances 0.000 title description 4
- 230000004888 barrier function Effects 0.000 title description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052802 copper Inorganic materials 0.000 claims abstract description 48
- 239000010949 copper Substances 0.000 claims abstract description 48
- 239000002253 acid Substances 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims abstract description 13
- 229910052811 halogen oxide Inorganic materials 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims description 76
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 10
- 229910052736 halogen Inorganic materials 0.000 claims description 10
- 150000002367 halogens Chemical class 0.000 claims description 10
- 239000003112 inhibitor Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000004094 surface-active agent Substances 0.000 claims description 10
- 239000007800 oxidant agent Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 8
- 239000002736 nonionic surfactant Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000012141 concentrate Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- WHCCOSVDXKJRKC-UHFFFAOYSA-N 4-(chloromethyl)-2h-benzotriazole Chemical group ClCC1=CC=CC2=C1N=NN2 WHCCOSVDXKJRKC-UHFFFAOYSA-N 0.000 claims description 5
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 150000002366 halogen compounds Chemical class 0.000 claims description 5
- 239000003002 pH adjusting agent Substances 0.000 claims description 5
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 4
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 4
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 3
- NJDPBWLDVFCXNP-UHFFFAOYSA-N 2-cyanoethyl dihydrogen phosphate Chemical compound OP(O)(=O)OCCC#N NJDPBWLDVFCXNP-UHFFFAOYSA-N 0.000 claims description 2
- RXCMFQDTWCCLBL-UHFFFAOYSA-N 4-amino-3-hydroxynaphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(N)=C(O)C=C(S(O)(=O)=O)C2=C1 RXCMFQDTWCCLBL-UHFFFAOYSA-N 0.000 claims description 2
- MAGFQRLKWCCTQJ-UHFFFAOYSA-N 4-ethenylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-N 0.000 claims description 2
- LGDFHDKSYGVKDC-UHFFFAOYSA-N 8-hydroxyquinoline-5-sulfonic acid Chemical compound C1=CN=C2C(O)=CC=C(S(O)(=O)=O)C2=C1 LGDFHDKSYGVKDC-UHFFFAOYSA-N 0.000 claims description 2
- OGBVRMYSNSKIEF-UHFFFAOYSA-N Benzylphosphonic acid Chemical compound OP(O)(=O)CC1=CC=CC=C1 OGBVRMYSNSKIEF-UHFFFAOYSA-N 0.000 claims description 2
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 2
- QLZHNIAADXEJJP-UHFFFAOYSA-N Phenylphosphonic acid Chemical compound OP(O)(=O)C1=CC=CC=C1 QLZHNIAADXEJJP-UHFFFAOYSA-N 0.000 claims description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 150000001413 amino acids Chemical class 0.000 claims description 2
- DQPBABKTKYNPMH-UHFFFAOYSA-N amino hydrogen sulfate Chemical compound NOS(O)(=O)=O DQPBABKTKYNPMH-UHFFFAOYSA-N 0.000 claims description 2
- OBESRABRARNZJB-UHFFFAOYSA-N aminomethanesulfonic acid Chemical compound NCS(O)(=O)=O OBESRABRARNZJB-UHFFFAOYSA-N 0.000 claims description 2
- 239000002280 amphoteric surfactant Substances 0.000 claims description 2
- 239000003945 anionic surfactant Substances 0.000 claims description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 2
- 229940092714 benzenesulfonic acid Drugs 0.000 claims description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 239000003093 cationic surfactant Substances 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- AFAXGSQYZLGZPG-UHFFFAOYSA-N ethanedisulfonic acid Chemical compound OS(=O)(=O)CCS(O)(=O)=O AFAXGSQYZLGZPG-UHFFFAOYSA-N 0.000 claims description 2
- BNKAXGCRDYRABM-UHFFFAOYSA-N ethenyl dihydrogen phosphate Chemical compound OP(O)(=O)OC=C BNKAXGCRDYRABM-UHFFFAOYSA-N 0.000 claims description 2
- ZJXZSIYSNXKHEA-UHFFFAOYSA-N ethyl dihydrogen phosphate Chemical compound CCOP(O)(O)=O ZJXZSIYSNXKHEA-UHFFFAOYSA-N 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- GJWAEWLHSDGBGG-UHFFFAOYSA-N hexylphosphonic acid Chemical compound CCCCCCP(O)(O)=O GJWAEWLHSDGBGG-UHFFFAOYSA-N 0.000 claims description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- YACKEPLHDIMKIO-UHFFFAOYSA-N methylphosphonic acid Chemical compound CP(O)(O)=O YACKEPLHDIMKIO-UHFFFAOYSA-N 0.000 claims description 2
- WRDZMZGYHVUYRU-UHFFFAOYSA-N n-[(4-methoxyphenyl)methyl]aniline Chemical compound C1=CC(OC)=CC=C1CNC1=CC=CC=C1 WRDZMZGYHVUYRU-UHFFFAOYSA-N 0.000 claims description 2
- CMPQUABWPXYYSH-UHFFFAOYSA-N phenyl phosphate Chemical compound OP(O)(=O)OC1=CC=CC=C1 CMPQUABWPXYYSH-UHFFFAOYSA-N 0.000 claims description 2
- 150000003009 phosphonic acids Chemical class 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 2
- 150000003460 sulfonic acids Chemical class 0.000 claims description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 claims description 2
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 claims description 2
- 235000011007 phosphoric acid Nutrition 0.000 claims 3
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 150000003016 phosphoric acids Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000012964 benzotriazole Substances 0.000 description 13
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 6
- -1 haloalkyl benzotriazole Chemical class 0.000 description 5
- 239000003623 enhancer Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- 150000001923 cyclic compounds Chemical class 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 150000004965 peroxy acids Chemical class 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Substances C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
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- 229910004003 H5IO6 Inorganic materials 0.000 description 1
- 229940123973 Oxygen scavenger Drugs 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
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- 230000000996 additive effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical class OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical class C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- IQRALCSGANRKJQ-UHFFFAOYSA-N periodic acid Chemical compound O[I](=O)(=O)=O.O[I](=O)(=O)=O IQRALCSGANRKJQ-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000011885 synergistic combination Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Substances [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
用于抛光至少部分包含钌和铜的表面或基底的浆料,其中所述浆料包含碱金属氢氧化物、氧化卤素化合物和卤烷基苯并三唑。浆料还可以包含磨料、酸和任选的烷氧基化醇。通过这些组分,浆料表现出高的钌相对于铜的去除速率比。
Description
交叉引用的申请
本申请要求于2018年3月28日提交的美国临时申请第62/649,324号的优先权,其通过引用整体并入本文。
技术领域
本公开提供了化学机械抛光(chemical mechanical polishing,CMP)浆料,所述浆料有利于以相对于铜的高的选择性来抛光钌材料。特别地,本公开的CMP浆料部分地包含氢氧化物pH调节剂、氧化卤素化合物(其可以为全卤化物(perhaolgenate)或卤代过氧酸)和卤烷基苯并三唑的协同组合。
背景技术
在半导体工业中的后段制程(back-end-of-line,BEOL)应用中,钌常常用作内衬材料。与一些其他材料例如钴不同,钌在化学上相对稳定并因此不会劣化。其还具有有利的沉积特性。然而,钌在CMP过程期间可能难以去除。此外,钌常常与铜联合使用,铜是相对软的材料并因此容易去除。铜对许多半导体器件的功能至关重要,因此如果使用太容易剥离或者损坏铜层或铜嵌体的CMP浆料,则其可能不利地影响成品器件的性能。
需要这样的CMP浆料:其平衡以足够高的速率去除钌同时仍保护同一半导体器件中的任何铜的能力。
发明内容
在一个实施方案中,本公开提供了一种CMP浆料,其包含碱金属氢氧化物、氧化卤素化合物(例如全卤化物或卤代过氧酸)和卤烷基苯并三唑的组合。浆料还可以包含磨料、酸、稳定剂和去除速率增强剂。
在另一个方面中,本文中公开的实施方案涉及用于钌和铜材料的抛光浆料浓缩物,其包含:碱金属氢氧化物;氧化卤素;卤烷基苯并三唑;磨料;和酸,其中浆料表现出大于约1.2的钌相对于铜的抛光选择性比。
在又一个方面中,本文中公开的实施方案涉及用于钌和铜材料的抛光浆料浓缩物,其包含:氢氧化钾,基于浆料的总重量,氢氧化钾以约0.01重量%至约10重量%的量存在;高碘酸(hydrogen periodate),基于浆料的总重量,高碘酸以约0.01重量%至约10重量%的量存在;氯甲基苯并三唑,基于浆料的总重量,氯甲基苯并三唑以约0.001重量%至约10重量%的量存在;二氧化硅,基于浆料的总重量,二氧化硅以约0.01重量%至约12重量%的量存在;以及丙二酸,基于浆料的总重量,丙二酸以约0.01重量%至约10重量%的量存在,其中浆料表现出大于2.5的钌相对于铜的抛光选择性比。
在又一个方面中,本文中公开的实施方案涉及用于钌和铜材料的抛光浆料浓缩物,其包含:pH调节剂;钌氧化剂;铜腐蚀抑制剂;磨料;和去除速率增强剂,其中浆料表现出大于约1.2的钌相对于铜的抛光选择性比。
在又一个方面中,本文中公开的实施方案涉及用于对半导体器件进行抛光并从其中去除钌的方法,所述方法包括:将化学机械抛光浆料浓缩物施加至所述层状半导体器件,所述浆料包含pH调节剂、钌氧化剂、铜腐蚀抑制剂、磨料和去除速率增强剂,其中浆料表现出大于约1.2的钌相对于铜的抛光选择性比;以及用旋转抛光垫对所述半导体器件进行抛光。
附图说明
图1示出了多种材料的去除速率(removal rate,RR)作为本公开的浆料中的钌氧化剂的量的函数的图。
具体实施方式
本公开的CMP浆料解决了如下问题:以令人满意的高速率对层状半导体器件进行抛光并从其中去除钌材料,同时仍保护器件上的任何铜层。换言之,相对于铜,本发明的CMP浆料显示出对抛光钌的高选择性。本公开的CMP浆料包含碱金属氢氧化物(例如氢氧化钾)、氧化卤素化合物(例如高碘酸盐)和卤烷基苯并三唑(例如氯甲基苯并三唑(CMBTA))的组合。如以下更详细讨论的,当与铜相比时,这些CMP浆料在抛光钌时表现出高的去除速率和选择性,例如1.2或更高、2.5或更高、以及3.0和更高的选择性。
基于各个组分自身的特性,这些有利的选择性比是出乎意料的。如以下更详细讨论的,仅具有苯并三唑(BTA)或甚至烷基苯并三唑化合物的组合物具有相对低的钌相对于铜的选择性。只有通过添加卤素基团(如本公开的卤烷基苯并三唑中的情况),钌相对于铜的选择性才显著提高。不受理论的束缚,认为卤素基团使卤烷基苯并三唑化合物更稳定,因此它们不像BTA或烷基苯并三唑那样快速氧化。卤素还可以使卤烷基苯并三唑分子更大,从而使正被抛光的基底上的钝化层的厚度增加。钝化层因此变得更疏水,这使其能够阻挡水中存在的蚀刻或腐蚀性化学品穿过该层,并且更好地保护任何铜表面。
本公开的卤烷基苯并三唑用作铜的腐蚀抑制剂。该化合物中的卤素可以为来自已知的卤素种类中的任一种,例如但不限于氯、溴或碘。烷基可以为甲基、乙基、丙基、异丙基、丁基、异丁基、或其任意组合。烷基还可以为具有1至12个碳的碳链的一种或更多种烷基。在一个实施方案中,化合物是氯甲基苯并三唑(CMBTA)。基于浆料的总重量,卤烷基苯并三唑化合物可以以0.001重量%至10重量%或其间的任何子范围的量存在。基于浆料的总重量,卤烷基苯并三唑化合物还可以以0.001重量%至1重量%或其间的任何子范围的量存在。卤烷基苯并三唑的量应通过平衡以下考虑来设定。如以下更详细讨论的,该化合物更多将导致钌相对于铜的选择性抛光比更高。然而,当使用过多的卤烷基苯并三唑时,其可能在经抛光的晶片的表面上留下残余物,这是不期望的。
本公开的氧化卤素化合物用作钌的氧化剂。当形成钌氧化物时,其可以通过磨料的机械作用被去除。卤素可以为来自已知的组中的任一种,例如但不限于碘、溴或氯。在一个实施方案中,氧化卤素化合物是具有化学式HIO4(偏形式)或H5IO6(正形式)的高碘酸。其他合适的化合物包括溴酸或氯酸。基于浆料的总重量,氧化卤素化合物可以以0.01重量%至10重量%或其间的任何子范围的量存在。基于浆料的总重量,氧化卤素化合物也可以以0.01重量%至1重量%或其间的任何子范围的量存在。
碱金属氢氧化物可以在浆料中用作pH调节剂。以下更详细地讨论pH对浆料性能的重要性。碱金属可以为来自已知的碱金属族中的任一种。在一个实施方案中,碱金属氢氧化物为氢氧化钾。基于浆料的总重量,碱金属氢氧化物可以以0.01重量%至10重量%或其间的任何子范围的量存在。基于浆料的总重量,碱金属氢氧化物还可以以0.01重量%至1重量%或其间的任何子范围的量存在。
本公开的浆料还包含磨料。磨料可以选自氧化铝、二氧化硅、二氧化钛、二氧化铈、二氧化锆、其共形成产物、或其混合物。基于浆料的总重量,磨料可以以0.01重量%至12重量%或其间的任何子范围的量存在。基于浆料的总重量,磨料还可以以0.01重量%至6重量%或其间的任何子范围的量存在。
本公开的浆料还包含至少一种酸,其可以用作去除速率增强剂。在一个或更多个实施方案中,本公开的酸可以选自羧酸或多种羧酸的混合物的组。在一个或更多个实施方案中,酸还可以为氨基酸、有机或无机磺酸、有机或无机磷酸和有机膦酸中的一种或更多种。有机磺酸的实例包括1,2-乙二磺酸、4-氨基-3-羟基-1-萘磺酸、8-羟基喹啉-5-磺酸、氨基甲磺酸、苯磺酸、羟胺O-磺酸、甲磺酸、间二甲苯-4-磺酸、聚(4-苯乙烯磺酸)、聚茴香脑磺酸、对甲苯磺酸和三氟甲磺酸。有机磷酸的实例包括乙基磷酸、氰乙基磷酸、苯基磷酸和乙烯基磷酸。有机膦酸的实例包括聚(乙烯基膦酸)、1-羟基乙烷-1,1-二膦酸、次氮基三(甲基膦酸)、二亚乙基三胺五(甲基膦酸)、N,N,N’N’-乙二胺四(亚甲基膦酸)、正己基膦酸、苄基膦酸和苯基膦酸。在更具体的实施方案中,酸可以为选自包括丙二酸、丙酸、有机磺酸或其混合物的组中的至少一种。基于浆料的总重量,酸可以以0.01重量%至10重量%或其间的任何子范围的量存在。基于浆料的总重量,酸还可以以0.01重量%至1重量%或其间的任何子范围的量存在。
在一个或更多个实施方案中,本公开的浆料还可以包含表面活性剂,其可以用作低K去除速率抑制剂。在一个或更多个实施方案中,浆料可以包含阳离子表面活性剂、阴离子表面活性剂、非离子表面活性剂、两性表面活性剂或其混合物。在更具体的实施方案中,组合物包含非离子表面活性剂。在一个或更多个实施方案中,非离子表面活性剂可以为包含疏水部分和烷氧基化醇部分的烷氧基化醇非离子表面活性剂。在一些实施方案中,非离子表面活性剂的烷氧基化醇部分可以包含环氧乙烷基团、环氧丙烷基团、或其混合物。在一些实施方案中,非离子部分的疏水部分可以包含含有3至20个碳或其间的任何子范围的碳的线性或支化烃基。当存在时,基于浆料的总重量,表面活性剂的量可以为0.01重量%至10重量%或其间的任何子范围。基于浆料的总重量,表面活性剂还可以以0.01重量%至1重量%或其间的任何子范围的量存在。
在一个或更多个实施方案中,浆料的pH可以为5至11,或6至11,或其间的任何子范围。然而,将浆料的pH设定在碱性范围内可能是有益的,因为这可以产生较低的铜去除速率。因此,在一些实施方案中,pH可以为7至11或其间的任何子范围,或者8.5至10.5或其间的任何子范围。
本公开的一般浆料组成汇总于下表1中。
表1
在一个或更多个实施方案中,本公开的浆料可以包含小于1重量%、或小于0.1重量%的未列于表1中并且先前在本申请中对于各组分所描述的其他添加剂/组分。在一个或更多个实施方案中,本公开的浆料仅由表1中列出的并且先前在本申请中对于各组分所描述的组分以及水组成。例如,在一些实施方案中,本公开的浆料可以特别排除以下添加剂组分中的一种或更多种,或其任意组合。这样的组分选自分子量大于1000g/mol或者在一些实施方案中大于2000g/mol的聚合物;氧清除剂;季铵盐(包括氢氧化季铵,例如TMAH);胺;碱,如NaOH和LiOH;除消泡剂之外的表面活性剂;消泡剂;含氟化合物;硅酸盐;含有多于2个羟基的羟基羧酸;没有氨基的羧酸和多羧酸;硅烷(例如,烷氧基硅烷);环状化合物(例如,非卤代唑(例如二唑、三唑或四唑),三嗪,以及含有至少两个环的环状化合物,例如经取代或未经取代的萘、或者经取代或未经取代的联苯醚);缓冲剂;非唑腐蚀抑制剂;和金属盐(例如,金属卤化物)。
实施例
提供实施例以进一步说明本公开的方法和抛光组合物的能力。所提供的实施例不旨在并且不应被解释为限制本公开的范围。
对于所有实施例,以1.5psi的下压力和175mL/分钟的流量使用AppliedMaterials Mirra CMP抛光机以对SKW CVD Ru晶片进行抛光。
下表2示出了铜、钽、钌(通过化学气相沉积或CVD而沉积的)、四乙基原硅酸盐(TEOS)和Black (其是用于各种抛光组合物的碳掺杂的CVD二氧化硅(BD1))的去除速率数据。改变CMBTA的量以显示该量如何影响钌相对于铜的抛光速率选择性。还存在包含BTA和甲基苯并三唑的比较例组合物,其说明了本公开的卤烷基苯并三唑(在这种情况下是CMBTA)显著提高了钌相对于铜的选择性。
表2
所有组合物均具有相同量的碱金属氢氧化物(KOH)、酸(丙二酸)、磨料(二氧化硅)和氧化卤素(高碘酸盐)。pH值也大致相等。CMBTA的量是不同的。如数据所示,对照组合物不具有任何种类的BTA。使用该组合物的钌的去除速率是高的或者至少是令人满意的,其他材料的去除速率也是如此。然而,在对照组合物中不含任何CMBTA,无法保护铜。对照例中铜的去除速率相对很高,因此钌相对于铜的选择性非常差,小于1。
相比之下,在实施例1至实施例4中,CMBTA的量越高,铜的去除速率越低,同时钌去除速率保持相对恒定,产生较好的钌相对于铜的选择性。这是出乎意料的结果,因为包含BTA(比较例1)和甲基苯并三唑(比较例2)代替CMBTA的组合物也显示出铜几乎不受保护。例如,实施例3、比较例1和比较例2各自分别具有百万分之600的CMBTA、BTA和甲基苯并三唑。如上所述,所有其他值均相同。然而,具有BTA的比较例1以几乎是实施例3的四倍的速率去除铜。具有甲基苯并三唑的比较例2以大于实施例3的两倍的速率去除铜。显然,CMBTA比非卤代苯并三唑化合物显著更好地保护铜,这是出乎意料的。CMBTA也不会显著不利地影响其他基底(例如,Ta、TEOS和BD1)的去除速率,并且实际上在一些情况下提高了去除速率。
表3示出了说明本公开的浆料的新的和出乎意料的效果的更多数据。在以下所示的七种组合物中,再次将CMBTA与BTA和甲基苯并三唑进行比较。钌氧化剂(氧化卤素)的量也是变化的。
表3
实施例6、比较例3和比较例4显示出与以上在表2中所述的类似的结果,不同之处在于以百万分之250代替百万分之600。即,CMBTA比BTA或甲基苯并三唑显著更好地保护铜,并且不会不利地影响钌去除速率。
实施例7至实施例10示出了对于不同量的钌氧化剂高碘酸盐的去除速率数据。在较高量的高碘酸盐下,钌的去除速率非常高,而铜的去除速率保持低,或甚至下降。该数据以图形方式示于图1中。
虽然已经参照一个或更多个示例性实施方案描述了本公开,但是本领域技术人员将理解,在不脱离本公开的范围的情况下,可以做出多种改变并且可以用等同物替代其要素。此外,在不脱离本公开的范围的情况下,可以做出许多修改以使特定情况或材料适应本公开的教导。因此,意图是本公开不限于作为预期的最佳实施方式公开的特定实方案,而是本公开将包括落入所附权利要求书范围内的所有实施方案。
Claims (34)
1.一种用于钌和铜材料的抛光组合物,包含:
碱金属氢氧化物;
氧化卤素,其中所述氧化卤素化合物包含选自由以下组成的组中的至少一种卤素:碘、溴、氯,及其任意组合,以及其中基于所述组合物的总重量,所述氧化卤素以0.1重量%至10重量%的量存在;
卤烷基苯并三唑,基于所述组合物的总重量,所述卤烷基苯并三唑以0.001重量%至0.08重量%的量存在;
磨料;和
酸,
其中所述组合物表现出大于1.2的钌相对于铜的抛光选择性比。
2.根据权利要求1所述的组合物,其中所述碱金属氢氧化物为氢氧化钾。
3.根据权利要求1所述的组合物,其中基于所述组合物的总重量,所述碱金属氢氧化物以0.01重量%至10重量%的量存在。
4.根据权利要求3所述的组合物,其中基于所述组合物的总重量,所述碱金属氢氧化物以0.01重量%至1重量%的量存在。
5.根据权利要求1所述的组合物,其中所述氧化卤素为高碘酸。
6.根据权利要求1所述的组合物,其中所述卤烷基苯并三唑包含选自由以下组成的组中的至少一种卤素:氯、溴、碘,及其任意组合。
7.根据权利要求1所述的组合物,其中所述卤烷基苯并三唑中的烷基是选自以下中的一种:甲基、乙基、丙基、异丙基、丁基、异丁基,或其任意组合。
8.根据权利要求1所述的组合物,其中所述卤烷基苯并三唑是氯甲基苯并三唑。
9.根据权利要求1所述的组合物,其中基于所述组合物的总重量,所述卤烷基苯并三唑以0.005重量%至0.08重量%的量存在。
10.根据权利要求1所述的组合物,其中所述磨料是选自由以下组成的组中的至少一种:氧化铝、二氧化硅、二氧化钛、二氧化铈、二氧化锆、其共形成产物,及其任意组合。
11.根据权利要求10所述的组合物,其中所述磨料是二氧化硅。
12.根据权利要求11所述的组合物,其中基于所述组合物的总重量,所述磨料以0.01重量%至12重量%的量存在。
13.根据权利要求12所述的组合物,其中基于所述组合物的总重量,所述磨料以0.01重量%至6重量%的量存在。
14.根据权利要求1所述的组合物,其中所述酸是选自由以下组成的组中的至少一种酸:羧酸、氨基酸、磺酸、磷酸、膦酸,及其任意组合。
15.根据权利要求14所述的组合物,其中所述磺酸是选自由以下组成的组中的至少一种有机磺酸:1,2-乙二磺酸、4-氨基-3-羟基-1-萘磺酸、8-羟基喹啉-5-磺酸、氨基甲磺酸、苯磺酸、羟胺O-磺酸、甲磺酸、间二甲苯-4-磺酸、聚(4-苯乙烯磺酸)、聚茴香脑磺酸、对甲苯磺酸和三氟甲磺酸。
16.根据权利要求14所述的组合物,其中所述磷酸是选自由以下组成的组中的至少一种有机磷酸:乙基磷酸、氰乙基磷酸、苯基磷酸和乙烯基磷酸。
17.根据权利要求14所述的组合物,其中所述膦酸是由以下组成的至少一种有机膦酸:聚(乙烯基膦酸)、1-羟基乙烷-1,1-二膦酸、次氮基三(甲基膦酸)、二亚乙基三胺五(甲基膦酸)、N,N,N’N’-乙二胺四(亚甲基膦酸)、正己基膦酸、苄基膦酸和苯基膦酸。
18.根据权利要求1所述的组合物,其中所述酸是选自由以下组成的组中的至少一种酸:丙二酸、丙酸、有机磺酸,及其任意组合。
19.根据权利要求1所述的组合物,其中基于所述组合物的总重量,所述酸以0.01重量%至10重量%的量存在。
20.根据权利要求1所述的组合物,其中基于所述组合物的总重量,所述酸以0.01重量%至1重量%的量存在。
21.根据权利要求1所述的组合物,还包含低K去除速率抑制剂。
22.根据权利要求21所述的组合物,其中所述低K去除速率抑制剂是表面活性剂。
23.根据权利要求22所述的组合物,其中所述表面活性剂是选自由以下组成的组中的至少一种表面活性剂:阳离子表面活性剂、阴离子表面活性剂、非离子表面活性剂和两性表面活性剂。
24.根据权利要求23所述的组合物,其中所述表面活性剂是烷氧基化醇非离子表面活性剂。
25.根据权利要求24所述的组合物,其中基于所述组合物的总重量,所述表面活性剂以0.01重量%至10重量%的量存在。
26.根据权利要求25所述的组合物,其中基于所述组合物的总重量,所述表面活性剂以0.01重量%至1重量%的量存在。
27.根据权利要求1所述的组合物,其中所述组合物的pH为5至11。
28.根据权利要求27所述的组合物,其中所述组合物的pH为7至11。
29.根据权利要求1所述的组合物,其中所述组合物表现出大于2.5的钌相对于铜的抛光选择性比。
30.一种用于钌和铜材料的抛光组合物浓缩物,包含:
氢氧化钾,基于所述组合物的总重量,所述氢氧化钾以0.01重量%至10重量%的量存在;
高碘酸,基于所述组合物的总重量计,所述高碘酸以0.1重量%至10重量%的量存在;
氯甲基苯并三唑,基于所述组合物的总重量,所述氯甲基苯并三唑以0.001重量%至0.08重量%的量存在;
二氧化硅,基于所述组合物的总重量,所述二氧化硅以0.01重量%至12重量%的量存在;以及
丙二酸,基于所述组合物的总重量,所述丙二酸以0.01重量%至10重量%的量存在,
其中所述组合物表现出大于2.5的钌相对于铜的抛光选择性比。
31.一种用于钌和铜材料的抛光组合物浓缩物,包含:
pH调节剂;
钌氧化剂,其中所述钌氧化剂包含选自由以下组成的组中的至少一种卤素:碘、溴、氯,及其任意组合,以及其中基于所述组合物的总重量,所述钌氧化剂以0.1重量%至10重量%的量存在;
铜腐蚀抑制剂,所述铜腐蚀抑制剂包含卤烷基苯并三唑,基于所述组合物的总重量,所述卤烷基苯并三唑以0.001重量%至0.08重量%的量存在;
磨料;和
去除速率增强剂,
其中所述组合物表现出大于1.2的钌相对于铜的抛光选择性比。
32.根据权利要求31所述的抛光组合物,还包含低K去除速率抑制剂。
33.一种用于对半导体器件进行抛光并从其中去除钌的方法,包括:
将根据权利要求1所述的化学机械抛光组合物施加至所述半导体器件;以及
用旋转抛光垫对所述半导体器件进行抛光。
34.根据权利要求33所述的方法,其中所述组合物还包含低K去除速率抑制剂。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1306517A (zh) * | 1998-06-24 | 2001-08-01 | 贝茨迪尔博恩公司 | 采用氯-甲基苯并三唑的异构体抑制腐蚀的方法 |
CN101205442A (zh) * | 2006-12-21 | 2008-06-25 | 罗门哈斯电子材料Cmp控股股份有限公司 | 钌-阻挡层抛光浆料 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010029705A1 (en) * | 1999-12-27 | 2001-10-18 | Norihiko Miyata | Composition and method for polishing magnetic disk substrate, and magnetic disk polished therewith |
US7029373B2 (en) | 2001-08-14 | 2006-04-18 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
US7097541B2 (en) | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
US6716281B2 (en) * | 2002-05-10 | 2004-04-06 | Electrochemicals, Inc. | Composition and method for preparing chemically-resistant roughened copper surfaces for bonding to substrates |
WO2003104350A1 (en) | 2002-06-07 | 2003-12-18 | Showa Denko K.K. | Metal polish composition, polishing method using the composition and method for producing wafer using the polishing method |
US6638341B1 (en) | 2002-06-14 | 2003-10-28 | Aeronex, Inc. | Method for rapid activation or preconditioning of porous gas purification substrates |
JP4083528B2 (ja) | 2002-10-01 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4339034B2 (ja) * | 2003-07-01 | 2009-10-07 | 花王株式会社 | 研磨液組成物 |
US7968465B2 (en) | 2003-08-14 | 2011-06-28 | Dupont Air Products Nanomaterials Llc | Periodic acid compositions for polishing ruthenium/low K substrates |
US6869336B1 (en) | 2003-09-18 | 2005-03-22 | Novellus Systems, Inc. | Methods and compositions for chemical mechanical planarization of ruthenium |
TWI288046B (en) * | 2003-11-14 | 2007-10-11 | Showa Denko Kk | Polishing composition and polishing method |
US20060163083A1 (en) | 2005-01-21 | 2006-07-27 | International Business Machines Corporation | Method and composition for electro-chemical-mechanical polishing |
WO2007019342A2 (en) | 2005-08-05 | 2007-02-15 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
US7265055B2 (en) | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
JP2014044982A (ja) * | 2012-08-24 | 2014-03-13 | Fujimi Inc | 研磨用組成物 |
JP6029916B2 (ja) * | 2012-09-28 | 2016-11-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
EP3019569B1 (en) | 2013-07-11 | 2018-05-30 | Basf Se | Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors |
JP6113619B2 (ja) * | 2013-09-30 | 2017-04-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
KR20160125957A (ko) | 2014-02-26 | 2016-11-01 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
JP6327746B2 (ja) * | 2014-03-31 | 2018-05-23 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US10253216B2 (en) * | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
-
2019
- 2019-03-11 WO PCT/US2019/021624 patent/WO2019190730A2/en unknown
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1306517A (zh) * | 1998-06-24 | 2001-08-01 | 贝茨迪尔博恩公司 | 采用氯-甲基苯并三唑的异构体抑制腐蚀的方法 |
CN101205442A (zh) * | 2006-12-21 | 2008-06-25 | 罗门哈斯电子材料Cmp控股股份有限公司 | 钌-阻挡层抛光浆料 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11851585B2 (en) | 2020-02-13 | 2023-12-26 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
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