JP2011523207A5 - - Google Patents
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- Publication number
- JP2011523207A5 JP2011523207A5 JP2011510492A JP2011510492A JP2011523207A5 JP 2011523207 A5 JP2011523207 A5 JP 2011523207A5 JP 2011510492 A JP2011510492 A JP 2011510492A JP 2011510492 A JP2011510492 A JP 2011510492A JP 2011523207 A5 JP2011523207 A5 JP 2011523207A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- mass
- silica
- potassium
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/126,739 | 2008-05-23 | ||
| US12/126,739 US8017524B2 (en) | 2008-05-23 | 2008-05-23 | Stable, high rate silicon slurry |
| PCT/US2009/002846 WO2009142692A2 (en) | 2008-05-23 | 2009-05-07 | Stable, high rate silicon slurry |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011523207A JP2011523207A (ja) | 2011-08-04 |
| JP2011523207A5 true JP2011523207A5 (enExample) | 2011-09-15 |
| JP5600100B2 JP5600100B2 (ja) | 2014-10-01 |
Family
ID=41340714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011510492A Active JP5600100B2 (ja) | 2008-05-23 | 2009-05-07 | 安定な高濃度ケイ素スラリー |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8017524B2 (enExample) |
| EP (1) | EP2297263B1 (enExample) |
| JP (1) | JP5600100B2 (enExample) |
| KR (1) | KR101297900B1 (enExample) |
| CN (1) | CN102037094B (enExample) |
| MY (1) | MY148323A (enExample) |
| TW (1) | TWI398506B (enExample) |
| WO (1) | WO2009142692A2 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8697576B2 (en) | 2009-09-16 | 2014-04-15 | Cabot Microelectronics Corporation | Composition and method for polishing polysilicon |
| US8883034B2 (en) | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
| US8815110B2 (en) | 2009-09-16 | 2014-08-26 | Cabot Microelectronics Corporation | Composition and method for polishing bulk silicon |
| US8025813B2 (en) * | 2009-11-12 | 2011-09-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| US8491808B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride |
| SG185085A1 (en) * | 2010-04-30 | 2012-12-28 | Sumco Corp | Method for polishing silicon wafer and polishing liquid therefor |
| MY163201A (en) * | 2011-01-21 | 2017-08-15 | Cabot Microelectronics Corp | Silicon polishing compositions with improved psd performance |
| CN102816530B (zh) * | 2011-06-08 | 2016-01-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| US8795548B1 (en) * | 2013-04-11 | 2014-08-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Silicon wafer polishing composition and related methods |
| US8801959B1 (en) * | 2013-04-11 | 2014-08-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable silicon wafer polishing composition and related methods |
| US9150759B2 (en) * | 2013-09-27 | 2015-10-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing composition for polishing silicon wafers and related methods |
| JP5985083B2 (ja) * | 2014-01-06 | 2016-09-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物、および半導体ウェハの製造方法 |
| JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP6357356B2 (ja) * | 2014-06-09 | 2018-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN104263249B (zh) * | 2014-09-26 | 2016-06-29 | 深圳市力合材料有限公司 | 一种硅溶胶的处理方法 |
| CN104650740B (zh) * | 2014-12-10 | 2017-07-14 | 深圳市力合材料有限公司 | 一种可实现快速稳定抛光的抛光液 |
| CN105802509B (zh) * | 2014-12-29 | 2018-10-26 | 安集微电子(上海)有限公司 | 一种组合物在阻挡层抛光中的应用 |
| WO2017051770A1 (ja) * | 2015-09-25 | 2017-03-30 | 山口精研工業株式会社 | 研磨剤組成物、および磁気ディスク基板の研磨方法 |
| US9534148B1 (en) | 2015-12-21 | 2017-01-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
| US9803108B1 (en) | 2016-10-19 | 2017-10-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous compositions of stabilized aminosilane group containing silica particles |
| US20190185713A1 (en) * | 2017-12-14 | 2019-06-20 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp slurry compositions containing silica with trimethylsulfoxonium cations |
| JP7157651B2 (ja) * | 2017-12-27 | 2022-10-20 | ニッタ・デュポン株式会社 | 研磨用組成物 |
| KR102003441B1 (ko) * | 2018-06-12 | 2019-07-24 | 주식회사 동진쎄미켐 | 화학-기계적 연마 슬러리 조성물 |
| US11472984B1 (en) | 2021-09-27 | 2022-10-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of enhancing the removal rate of polysilicon |
| CN115926629B (zh) * | 2022-12-30 | 2023-12-05 | 昂士特科技(深圳)有限公司 | 具有改进再循环性能的化学机械抛光组合物 |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
| US4169337A (en) * | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
| US4462188A (en) * | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
| US4588421A (en) * | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
| JPS6230333A (ja) * | 1985-05-20 | 1987-02-09 | ナルコ ケミカル カンパニ− | シリコンウエ−ハの研磨方法及び組成物 |
| US5230833A (en) * | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| EP0520109B1 (en) * | 1991-05-28 | 1995-03-29 | Rodel, Inc. | Low sodium, low metals silica polishing slurries |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5571373A (en) * | 1994-05-18 | 1996-11-05 | Memc Electronic Materials, Inc. | Method of rough polishing semiconductor wafers to reduce surface roughness |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| MY133700A (en) * | 1996-05-15 | 2007-11-30 | Kobe Steel Ltd | Polishing fluid composition and polishing method |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| JP4163785B2 (ja) | 1998-04-24 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
| JPH11349925A (ja) * | 1998-06-05 | 1999-12-21 | Fujimi Inc | エッジポリッシング用組成物 |
| KR100567962B1 (ko) * | 1998-06-22 | 2006-04-05 | 가부시키가이샤 후지미 인코포레이티드 | 연마 조성물 및 표면 처리 조성물 |
| JP4151179B2 (ja) * | 1999-11-22 | 2008-09-17 | Jsr株式会社 | 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体 |
| KR100400030B1 (ko) * | 2000-06-05 | 2003-09-29 | 삼성전자주식회사 | 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법 |
| JP3440419B2 (ja) * | 2001-02-02 | 2003-08-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| US20040132308A1 (en) * | 2001-10-24 | 2004-07-08 | Psiloquest, Inc. | Corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces |
| KR100497608B1 (ko) * | 2002-08-05 | 2005-07-01 | 삼성전자주식회사 | 슬러리 조성물 및 이의 제조 방법과 이를 사용한 연마 방법 |
| JP4593064B2 (ja) * | 2002-09-30 | 2010-12-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| JP2004128069A (ja) * | 2002-09-30 | 2004-04-22 | Fujimi Inc | 研磨用組成物及びそれを用いた研磨方法 |
| US7005382B2 (en) * | 2002-10-31 | 2006-02-28 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
| AU2003277621A1 (en) * | 2002-11-08 | 2004-06-07 | Fujimi Incorporated | Polishing composition and rinsing composition |
| JP2004273547A (ja) | 2003-03-05 | 2004-09-30 | Kao Corp | 研磨速度選択比向上剤 |
| KR20060015723A (ko) * | 2003-05-09 | 2006-02-20 | 산요가세이고교 가부시키가이샤 | 씨엠피 프로세스용 연마액 및 연마방법 |
| JP2005038924A (ja) * | 2003-07-16 | 2005-02-10 | Sanyo Chem Ind Ltd | Cmpプロセス用研磨液 |
| KR20060118396A (ko) * | 2003-07-30 | 2006-11-23 | 클라이막스 엔지니어레드 메테리얼스, 엘엘씨 | 구리의 화학적-기계적 평면화를 위한 슬러리 및 방법 |
| JP4668528B2 (ja) * | 2003-09-05 | 2011-04-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US7153335B2 (en) * | 2003-10-10 | 2006-12-26 | Dupont Air Products Nanomaterials Llc | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
| JP2005268667A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| DE102005039896A1 (de) * | 2004-08-24 | 2006-03-02 | Disco Corporation | Polierflüssigkeit |
| JP2007103485A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | 研磨方法及びそれに用いる研磨液 |
| JP2007129167A (ja) * | 2005-11-07 | 2007-05-24 | Fujifilm Corp | 金属用研磨液 |
| JP2007201012A (ja) * | 2006-01-24 | 2007-08-09 | Fujifilm Corp | 金属用研磨液 |
| JP2007214205A (ja) * | 2006-02-07 | 2007-08-23 | Fujimi Inc | 研磨用組成物 |
| KR20070088245A (ko) * | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | 금속용 연마액 |
| JP2007234852A (ja) * | 2006-03-01 | 2007-09-13 | Fujifilm Corp | 研磨方法 |
| US20090156006A1 (en) | 2006-05-02 | 2009-06-18 | Sriram Anjur | Compositions and methods for cmp of semiconductor materials |
| US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
| JP5357396B2 (ja) * | 2007-01-31 | 2013-12-04 | ニッタ・ハース株式会社 | 研磨組成物用添加剤および研磨組成物の使用方法 |
| US7678605B2 (en) * | 2007-08-30 | 2010-03-16 | Dupont Air Products Nanomaterials Llc | Method for chemical mechanical planarization of chalcogenide materials |
| US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
-
2008
- 2008-05-23 US US12/126,739 patent/US8017524B2/en active Active
-
2009
- 2009-05-07 WO PCT/US2009/002846 patent/WO2009142692A2/en not_active Ceased
- 2009-05-07 EP EP09750923.6A patent/EP2297263B1/en active Active
- 2009-05-07 KR KR1020107028872A patent/KR101297900B1/ko active Active
- 2009-05-07 MY MYPI2010005522A patent/MY148323A/en unknown
- 2009-05-07 JP JP2011510492A patent/JP5600100B2/ja active Active
- 2009-05-07 CN CN200980118582.0A patent/CN102037094B/zh active Active
- 2009-05-12 TW TW098115750A patent/TWI398506B/zh active
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