JP2006191078A5 - - Google Patents

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Publication number
JP2006191078A5
JP2006191078A5 JP2005376842A JP2005376842A JP2006191078A5 JP 2006191078 A5 JP2006191078 A5 JP 2006191078A5 JP 2005376842 A JP2005376842 A JP 2005376842A JP 2005376842 A JP2005376842 A JP 2005376842A JP 2006191078 A5 JP2006191078 A5 JP 2006191078A5
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JP
Japan
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weight
hydroxide
silica
mol
compound
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JP2005376842A
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English (en)
Japanese (ja)
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JP5016220B2 (ja
JP2006191078A (ja
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Priority claimed from US11/023,862 external-priority patent/US7291280B2/en
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Publication of JP2006191078A publication Critical patent/JP2006191078A/ja
Publication of JP2006191078A5 publication Critical patent/JP2006191078A5/ja
Application granted granted Critical
Publication of JP5016220B2 publication Critical patent/JP5016220B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005376842A 2004-12-28 2005-12-28 窒化ケイ素上の二酸化ケイ素をケミカルメカニカル研磨するための多工程法 Expired - Fee Related JP5016220B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/023,862 2004-12-28
US11/023,862 US7291280B2 (en) 2004-12-28 2004-12-28 Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride

Publications (3)

Publication Number Publication Date
JP2006191078A JP2006191078A (ja) 2006-07-20
JP2006191078A5 true JP2006191078A5 (enExample) 2012-01-05
JP5016220B2 JP5016220B2 (ja) 2012-09-05

Family

ID=36585777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005376842A Expired - Fee Related JP5016220B2 (ja) 2004-12-28 2005-12-28 窒化ケイ素上の二酸化ケイ素をケミカルメカニカル研磨するための多工程法

Country Status (7)

Country Link
US (1) US7291280B2 (enExample)
JP (1) JP5016220B2 (enExample)
KR (1) KR20060076689A (enExample)
CN (1) CN1822325A (enExample)
DE (1) DE102005058272A1 (enExample)
FR (2) FR2880188A1 (enExample)
TW (1) TW200633041A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20060213126A1 (en) * 2005-03-28 2006-09-28 Cho Yun J Method for preparing a polishing slurry having high dispersion stability
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
US20070269908A1 (en) * 2006-05-17 2007-11-22 Hsin-Kun Chu Method for in-line controlling hybrid chemical mechanical polishing process
US7544618B2 (en) * 2006-05-18 2009-06-09 Macronix International Co., Ltd. Two-step chemical mechanical polishing process
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR101406487B1 (ko) 2006-10-06 2014-06-12 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 반도체 장치의 화학 기계연마 방법
DE102006061891A1 (de) 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
KR100821488B1 (ko) * 2006-12-28 2008-04-14 동부일렉트로닉스 주식회사 반도체 소자의 격리막 형성방법
WO2008095078A1 (en) * 2007-01-31 2008-08-07 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 cmp 슬러리 조성물 및 이를 이용한 연마 방법
JP5186296B2 (ja) * 2008-06-30 2013-04-17 信越半導体株式会社 ウェーハの研磨方法及び半導体素子の製造方法
JP5261065B2 (ja) * 2008-08-08 2013-08-14 シャープ株式会社 半導体装置の製造方法
US8366959B2 (en) * 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
CN102725374B (zh) * 2010-01-29 2016-04-27 福吉米株式会社 半导体晶片的再生方法和研磨用组合物
KR20120135870A (ko) * 2011-06-07 2012-12-17 동우 화인켐 주식회사 단결정 실리콘 웨이퍼 및 그 제조방법
JP2014534630A (ja) * 2011-10-19 2014-12-18 ドングウー ファイン−ケム カンパニー、 リミテッドDongwoo Fine−Chem Co., Ltd. 結晶性シリコンウェハーのテクスチャエッチング液組成物及びテクスチャエッチング方法
EP2662885A1 (en) 2012-05-07 2013-11-13 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
JP7356932B2 (ja) * 2019-09-26 2023-10-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
EP0853335A3 (en) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Slurry and process for the mechano-chemical polishing of semiconductor devices
US6019806A (en) * 1998-01-08 2000-02-01 Sees; Jennifer A. High selectivity slurry for shallow trench isolation processing
US20020019202A1 (en) * 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
US6293845B1 (en) * 1999-09-04 2001-09-25 Mitsubishi Materials Corporation System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current
US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
JP2001332516A (ja) * 2000-05-19 2001-11-30 Hitachi Chem Co Ltd Cmp研磨剤及び基板の研磨方法
US6593240B1 (en) * 2000-06-28 2003-07-15 Infineon Technologies, North America Corp Two step chemical mechanical polishing process
US6307628B1 (en) * 2000-08-18 2001-10-23 Taiwan Semiconductor Manufacturing Company, Ltd Method and apparatus for CMP end point detection using confocal optics
US20030176151A1 (en) * 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US6910951B2 (en) * 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
JP2004349426A (ja) * 2003-05-21 2004-12-09 Jsr Corp Sti用化学機械研磨方法
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry

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