TW200633041A - Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride - Google Patents
Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitrideInfo
- Publication number
- TW200633041A TW200633041A TW094144406A TW94144406A TW200633041A TW 200633041 A TW200633041 A TW 200633041A TW 094144406 A TW094144406 A TW 094144406A TW 94144406 A TW94144406 A TW 94144406A TW 200633041 A TW200633041 A TW 200633041A
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon nitride
- silica
- mechanical polishing
- chemical mechanical
- step methods
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 8
- 239000000377 silicon dioxide Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 abstract 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 abstract 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 abstract 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 abstract 2
- 150000003839 salts Chemical class 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 150000001767 cationic compounds Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/023,862 US7291280B2 (en) | 2004-12-28 | 2004-12-28 | Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200633041A true TW200633041A (en) | 2006-09-16 |
Family
ID=36585777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094144406A TW200633041A (en) | 2004-12-28 | 2005-12-15 | Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride |
Country Status (7)
Country | Link |
---|---|
US (1) | US7291280B2 (zh) |
JP (1) | JP5016220B2 (zh) |
KR (1) | KR20060076689A (zh) |
CN (1) | CN1822325A (zh) |
DE (1) | DE102005058272A1 (zh) |
FR (2) | FR2880188A1 (zh) |
TW (1) | TW200633041A (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050189322A1 (en) * | 2004-02-27 | 2005-09-01 | Lane Sarah J. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
DE102006013728A1 (de) * | 2005-03-28 | 2006-10-19 | Samsung Corning Co., Ltd., Suwon | Verfahren zum Herstellen einer Polierslurry mit hoher Dispersionsstabilität |
US7365045B2 (en) * | 2005-03-30 | 2008-04-29 | Advanced Tehnology Materials, Inc. | Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide |
US20070269908A1 (en) * | 2006-05-17 | 2007-11-22 | Hsin-Kun Chu | Method for in-line controlling hybrid chemical mechanical polishing process |
US7544618B2 (en) * | 2006-05-18 | 2009-06-09 | Macronix International Co., Ltd. | Two-step chemical mechanical polishing process |
JP5204960B2 (ja) * | 2006-08-24 | 2013-06-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
KR101406487B1 (ko) | 2006-10-06 | 2014-06-12 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 반도체 장치의 화학 기계연마 방법 |
KR100821488B1 (ko) * | 2006-12-28 | 2008-04-14 | 동부일렉트로닉스 주식회사 | 반도체 소자의 격리막 형성방법 |
DE102006061891A1 (de) | 2006-12-28 | 2008-07-03 | Basf Se | Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid |
CN101636465A (zh) * | 2007-01-31 | 2010-01-27 | 高级技术材料公司 | 用于化学机械抛光浆料应用的聚合物-二氧化硅分散剂的稳定化 |
KR100949250B1 (ko) | 2007-10-10 | 2010-03-25 | 제일모직주식회사 | 금속 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
JP5186296B2 (ja) * | 2008-06-30 | 2013-04-17 | 信越半導体株式会社 | ウェーハの研磨方法及び半導体素子の製造方法 |
JP5261065B2 (ja) * | 2008-08-08 | 2013-08-14 | シャープ株式会社 | 半導体装置の製造方法 |
TW201038690A (en) * | 2008-09-26 | 2010-11-01 | Rhodia Operations | Abrasive compositions for chemical mechanical polishing and methods for using same |
WO2011093223A1 (ja) * | 2010-01-29 | 2011-08-04 | 株式会社 フジミインコーポレーテッド | 半導体ウェーハの再生方法及び研磨用組成物 |
KR20120135870A (ko) * | 2011-06-07 | 2012-12-17 | 동우 화인켐 주식회사 | 단결정 실리콘 웨이퍼 및 그 제조방법 |
CN103890139A (zh) * | 2011-10-19 | 2014-06-25 | 东友精细化工有限公司 | 结晶性硅晶片的织构蚀刻液组合物及织构蚀刻方法 |
EP2662885A1 (en) | 2012-05-07 | 2013-11-13 | Basf Se | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle |
US8821215B2 (en) * | 2012-09-07 | 2014-09-02 | Cabot Microelectronics Corporation | Polypyrrolidone polishing composition and method |
JP7356932B2 (ja) * | 2019-09-26 | 2023-10-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
EP0853335A3 (en) * | 1997-01-10 | 1999-01-07 | Texas Instruments Incorporated | Slurry and process for the mechano-chemical polishing of semiconductor devices |
US6019806A (en) * | 1998-01-08 | 2000-02-01 | Sees; Jennifer A. | High selectivity slurry for shallow trench isolation processing |
US20020019202A1 (en) * | 1998-06-10 | 2002-02-14 | Thomas Terence M. | Control of removal rates in CMP |
US6293845B1 (en) * | 1999-09-04 | 2001-09-25 | Mitsubishi Materials Corporation | System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current |
US20040055993A1 (en) * | 1999-10-12 | 2004-03-25 | Moudgil Brij M. | Materials and methods for control of stability and rheological behavior of particulate suspensions |
JP2001332516A (ja) * | 2000-05-19 | 2001-11-30 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
US6593240B1 (en) * | 2000-06-28 | 2003-07-15 | Infineon Technologies, North America Corp | Two step chemical mechanical polishing process |
US6307628B1 (en) * | 2000-08-18 | 2001-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd | Method and apparatus for CMP end point detection using confocal optics |
US20030176151A1 (en) * | 2002-02-12 | 2003-09-18 | Applied Materials, Inc. | STI polish enhancement using fixed abrasives with amino acid additives |
US6910951B2 (en) * | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
JP2004349426A (ja) * | 2003-05-21 | 2004-12-09 | Jsr Corp | Sti用化学機械研磨方法 |
US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
-
2004
- 2004-12-28 US US11/023,862 patent/US7291280B2/en not_active Expired - Fee Related
-
2005
- 2005-12-06 DE DE102005058272A patent/DE102005058272A1/de not_active Withdrawn
- 2005-12-15 TW TW094144406A patent/TW200633041A/zh unknown
- 2005-12-26 KR KR1020050129996A patent/KR20060076689A/ko not_active Application Discontinuation
- 2005-12-27 FR FR0554114A patent/FR2880188A1/fr not_active Withdrawn
- 2005-12-27 CN CNA2005101381482A patent/CN1822325A/zh active Pending
- 2005-12-28 JP JP2005376842A patent/JP5016220B2/ja not_active Expired - Fee Related
-
2006
- 2006-05-24 FR FR0604741A patent/FR2885450A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US7291280B2 (en) | 2007-11-06 |
JP2006191078A (ja) | 2006-07-20 |
CN1822325A (zh) | 2006-08-23 |
FR2885450A1 (fr) | 2006-11-10 |
FR2880188A1 (fr) | 2006-06-30 |
US20060138086A1 (en) | 2006-06-29 |
DE102005058272A1 (de) | 2006-07-13 |
JP5016220B2 (ja) | 2012-09-05 |
KR20060076689A (ko) | 2006-07-04 |
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