DE60330971D1 - Halbleiterschleif prozess zu seiner herstellung und polierverfahren - Google Patents
Halbleiterschleif prozess zu seiner herstellung und polierverfahrenInfo
- Publication number
- DE60330971D1 DE60330971D1 DE60330971T DE60330971T DE60330971D1 DE 60330971 D1 DE60330971 D1 DE 60330971D1 DE 60330971 T DE60330971 T DE 60330971T DE 60330971 T DE60330971 T DE 60330971T DE 60330971 D1 DE60330971 D1 DE 60330971D1
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- additive
- polishing compound
- compound
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000007517 polishing process Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 abstract 8
- 150000001875 compounds Chemical class 0.000 abstract 5
- 239000000654 additive Substances 0.000 abstract 3
- 230000000996 additive effect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000006061 abrasive grain Substances 0.000 abstract 1
- 239000003945 anionic surfactant Substances 0.000 abstract 1
- 229910000420 cerium oxide Inorganic materials 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 229920000620 organic polymer Polymers 0.000 abstract 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 abstract 1
- 229920000058 polyacrylate Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002212679 | 2002-07-22 | ||
PCT/JP2003/009259 WO2004010487A1 (ja) | 2002-07-22 | 2003-07-22 | 半導体用研磨剤、その製造方法及び研磨方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60330971D1 true DE60330971D1 (de) | 2010-03-04 |
Family
ID=30767815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60330971T Expired - Lifetime DE60330971D1 (de) | 2002-07-22 | 2003-07-22 | Halbleiterschleif prozess zu seiner herstellung und polierverfahren |
Country Status (11)
Country | Link |
---|---|
US (2) | US20050126080A1 (de) |
EP (1) | EP1542266B1 (de) |
JP (1) | JP4554363B2 (de) |
KR (2) | KR101068068B1 (de) |
CN (1) | CN100369211C (de) |
AT (1) | ATE455367T1 (de) |
AU (1) | AU2003281655A1 (de) |
DE (1) | DE60330971D1 (de) |
SG (1) | SG155045A1 (de) |
TW (1) | TWI285668B (de) |
WO (1) | WO2004010487A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI256971B (en) * | 2002-08-09 | 2006-06-21 | Hitachi Chemical Co Ltd | CMP abrasive and method for polishing substrate |
KR100582771B1 (ko) * | 2004-03-29 | 2006-05-22 | 한화석유화학 주식회사 | 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리 |
WO2005110679A1 (ja) * | 2004-05-19 | 2005-11-24 | Nissan Chemical Industries, Ltd. | 研磨用組成物 |
CN101311205A (zh) | 2004-07-23 | 2008-11-26 | 日立化成工业株式会社 | Cmp研磨剂以及衬底的研磨方法 |
US20070218811A1 (en) * | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
JP2006179678A (ja) * | 2004-12-22 | 2006-07-06 | Hitachi Chem Co Ltd | 半導体絶縁膜用cmp研磨剤及び基板の研磨方法 |
JP2006303348A (ja) * | 2005-04-25 | 2006-11-02 | Asahi Glass Co Ltd | 化学的機械的研磨用研磨剤、研磨方法および半導体集積回路装置の製造方法 |
JP2006339594A (ja) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | 半導体用研磨剤 |
WO2007029465A1 (ja) * | 2005-09-09 | 2007-03-15 | Asahi Glass Company, Limited | 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法 |
JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
KR100734305B1 (ko) * | 2006-01-17 | 2007-07-02 | 삼성전자주식회사 | 디싱 현상 없이 평탄화된 막을 구비하는 반도체 소자의제조방법 및 그에 의해 제조된 반도체 소자 |
US7721415B2 (en) * | 2006-04-19 | 2010-05-25 | Headway Technologies, Inc | Method of manufacturing a thin-film magnetic head |
SG136886A1 (en) * | 2006-04-28 | 2007-11-29 | Asahi Glass Co Ltd | Method for producing glass substrate for magnetic disk, and magnetic disk |
JP2008010835A (ja) * | 2006-05-31 | 2008-01-17 | Sumitomo Electric Ind Ltd | 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法 |
JP4836731B2 (ja) * | 2006-07-18 | 2011-12-14 | 旭硝子株式会社 | 磁気ディスク用ガラス基板の製造方法 |
EP2061070A4 (de) * | 2006-09-11 | 2010-06-02 | Asahi Glass Co Ltd | Poliermittel für ein integriertes halbleiterschaltungsbauelement, polierverfahren und verfahren zum herstellen eines integrierten halbleiterschaltungsbauelements |
WO2008032681A1 (fr) * | 2006-09-13 | 2008-03-20 | Asahi Glass Co., Ltd. | Agent de polissage pour dispositif à semi-conducteur en circuit intégré, procédé de polissage, et procédé de fabrication du dispositif à semi-conducteur en circuit intégré |
US20100015806A1 (en) * | 2006-09-15 | 2010-01-21 | Masato Fukasawa | Cmp polishing slurry, additive liquid for cmp polishing slurry, and substrate-polishing processes using the same |
US8357311B2 (en) | 2006-12-28 | 2013-01-22 | Kao Corporation | Polishing liquid composition |
JP4489108B2 (ja) * | 2007-09-13 | 2010-06-23 | 株式会社東芝 | 半導体装置の製造方法 |
CN101608097B (zh) * | 2009-07-14 | 2011-12-21 | 上海华明高纳稀土新材料有限公司 | 化学机械抛光用纳米氧化铈浆液及其制备方法 |
CN104024366A (zh) * | 2011-12-27 | 2014-09-03 | 旭硝子株式会社 | 研磨剂用添加剂及研磨方法 |
JP5957292B2 (ja) | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
KR102198376B1 (ko) * | 2012-11-02 | 2021-01-04 | 로렌스 리버모어 내쇼날 시큐리티, 엘엘시 | 표면 활성의 손실없이 대전된 콜로이드의 응집을 방지하는 방법 |
JP6191433B2 (ja) * | 2013-12-11 | 2017-09-06 | 旭硝子株式会社 | 研磨剤および研磨方法 |
SG11201607359XA (en) | 2014-03-20 | 2016-10-28 | Fujimi Inc | Polishing composition, polishing method, and method for producing substrate |
KR102594932B1 (ko) * | 2015-05-08 | 2023-10-27 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
US10421890B2 (en) | 2016-03-31 | 2019-09-24 | Versum Materials Us, Llc | Composite particles, method of refining and use thereof |
JP7187770B2 (ja) | 2017-11-08 | 2022-12-13 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
JP7467188B2 (ja) | 2020-03-24 | 2024-04-15 | キオクシア株式会社 | Cmp方法及びcmp用洗浄剤 |
CN111673607B (zh) * | 2020-04-28 | 2021-11-26 | 北京烁科精微电子装备有限公司 | 一种化学机械平坦化设备 |
JP7437368B2 (ja) * | 2020-11-06 | 2024-02-22 | エスケー エンパルス カンパニー リミテッド | 研磨パッド、研磨パッドの製造方法及びそれを用いた半導体素子の製造方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3278532B2 (ja) * | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
KR19980019046A (ko) * | 1996-08-29 | 1998-06-05 | 고사이 아키오 | 연마용 조성물 및 이의 용도(Abrasive composition and use of the same) |
JPH10125638A (ja) * | 1996-08-29 | 1998-05-15 | Sumitomo Chem Co Ltd | 研磨用組成物及びそれを使用した半導体基板上の金属膜の平坦化方法 |
EP1610367B1 (de) * | 1996-09-30 | 2010-03-17 | Hitachi Chemical Co., Ltd. | Schleifmittel auf Basis von Ceroxid und Verfahren zum Polieren von Oberflächen |
JPH10102040A (ja) * | 1996-09-30 | 1998-04-21 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
TW365563B (en) * | 1997-04-28 | 1999-08-01 | Seimi Chem Kk | Polishing agent for semiconductor and method for its production |
WO1999043761A1 (fr) * | 1998-02-24 | 1999-09-02 | Showa Denko K.K. | Composition abrasive de polissage d'un dispositif semiconducteur et procede de production d'un dispositif semiconducteur afferent |
JP3480323B2 (ja) * | 1998-06-30 | 2003-12-15 | 日立化成工業株式会社 | 酸化セリウム研磨剤、基板の研磨法及び半導体装置 |
JP2000158341A (ja) * | 1998-11-27 | 2000-06-13 | Sumitomo Metal Ind Ltd | 研磨方法及び研磨システム |
KR100797218B1 (ko) * | 1998-12-25 | 2008-01-23 | 히다치 가세고교 가부시끼가이샤 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
JP2000357795A (ja) * | 1999-06-17 | 2000-12-26 | Nec Kansai Ltd | ディプレッション型半導体装置の製造方法 |
JP3957924B2 (ja) * | 1999-06-28 | 2007-08-15 | 株式会社東芝 | Cmp研磨方法 |
JP4555936B2 (ja) * | 1999-07-21 | 2010-10-06 | 日立化成工業株式会社 | Cmp研磨液 |
JP2001031951A (ja) * | 1999-07-22 | 2001-02-06 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
JP2001284296A (ja) * | 2000-03-02 | 2001-10-12 | Eternal Chemical Co Ltd | 研磨性スラリー及びその使用 |
JP2001269859A (ja) * | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP4123730B2 (ja) * | 2001-03-15 | 2008-07-23 | 日立化成工業株式会社 | 酸化セリウム研磨剤及びこれを用いた基板の研磨方法 |
US6540935B2 (en) * | 2001-04-05 | 2003-04-01 | Samsung Electronics Co., Ltd. | Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same |
JP5017574B2 (ja) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | 酸化セリウム研磨剤及び基板の製造方法 |
KR100457743B1 (ko) * | 2002-05-17 | 2004-11-18 | 주식회사 하이닉스반도체 | 산화막용 cmp 슬러리 및 이를 이용한 반도체 소자의형성 방법 |
JPWO2006098141A1 (ja) * | 2005-03-16 | 2008-08-21 | 旭硝子株式会社 | 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 |
JP2006278522A (ja) * | 2005-03-28 | 2006-10-12 | Seimi Chem Co Ltd | 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 |
JP2006339594A (ja) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | 半導体用研磨剤 |
EP2061070A4 (de) * | 2006-09-11 | 2010-06-02 | Asahi Glass Co Ltd | Poliermittel für ein integriertes halbleiterschaltungsbauelement, polierverfahren und verfahren zum herstellen eines integrierten halbleiterschaltungsbauelements |
WO2008032681A1 (fr) * | 2006-09-13 | 2008-03-20 | Asahi Glass Co., Ltd. | Agent de polissage pour dispositif à semi-conducteur en circuit intégré, procédé de polissage, et procédé de fabrication du dispositif à semi-conducteur en circuit intégré |
-
2003
- 2003-07-22 AU AU2003281655A patent/AU2003281655A1/en not_active Abandoned
- 2003-07-22 JP JP2004522774A patent/JP4554363B2/ja not_active Expired - Lifetime
- 2003-07-22 SG SG200700366-8A patent/SG155045A1/en unknown
- 2003-07-22 DE DE60330971T patent/DE60330971D1/de not_active Expired - Lifetime
- 2003-07-22 KR KR1020107015417A patent/KR101068068B1/ko active IP Right Grant
- 2003-07-22 EP EP03741526A patent/EP1542266B1/de not_active Expired - Lifetime
- 2003-07-22 TW TW092119992A patent/TWI285668B/zh not_active IP Right Cessation
- 2003-07-22 AT AT03741526T patent/ATE455367T1/de not_active IP Right Cessation
- 2003-07-22 CN CNB038175134A patent/CN100369211C/zh not_active Expired - Lifetime
- 2003-07-22 KR KR1020057001056A patent/KR100988749B1/ko active IP Right Grant
- 2003-07-22 WO PCT/JP2003/009259 patent/WO2004010487A1/ja active Application Filing
-
2005
- 2005-01-24 US US11/039,848 patent/US20050126080A1/en not_active Abandoned
-
2009
- 2009-11-13 US US12/618,018 patent/US20100055909A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU2003281655A8 (en) | 2004-02-09 |
EP1542266A4 (de) | 2005-09-14 |
KR20100088629A (ko) | 2010-08-09 |
TW200403317A (en) | 2004-03-01 |
JP4554363B2 (ja) | 2010-09-29 |
US20100055909A1 (en) | 2010-03-04 |
EP1542266B1 (de) | 2010-01-13 |
KR100988749B1 (ko) | 2010-10-20 |
US20050126080A1 (en) | 2005-06-16 |
CN1672246A (zh) | 2005-09-21 |
TWI285668B (en) | 2007-08-21 |
SG155045A1 (en) | 2009-09-30 |
JPWO2004010487A1 (ja) | 2005-11-17 |
AU2003281655A1 (en) | 2004-02-09 |
EP1542266A1 (de) | 2005-06-15 |
ATE455367T1 (de) | 2010-01-15 |
KR101068068B1 (ko) | 2011-09-28 |
CN100369211C (zh) | 2008-02-13 |
WO2004010487A1 (ja) | 2004-01-29 |
KR20050021533A (ko) | 2005-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |