ATE455367T1 - Halbleiterschleif prozess zu seiner herstellung und polierverfahren - Google Patents

Halbleiterschleif prozess zu seiner herstellung und polierverfahren

Info

Publication number
ATE455367T1
ATE455367T1 AT03741526T AT03741526T ATE455367T1 AT E455367 T1 ATE455367 T1 AT E455367T1 AT 03741526 T AT03741526 T AT 03741526T AT 03741526 T AT03741526 T AT 03741526T AT E455367 T1 ATE455367 T1 AT E455367T1
Authority
AT
Austria
Prior art keywords
polishing
additive
polishing compound
compound
semiconductor
Prior art date
Application number
AT03741526T
Other languages
English (en)
Inventor
Yoshinori Kon
Norihito Nakazawa
Chie Ishida
Original Assignee
Seimi Chem Kk
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seimi Chem Kk, Asahi Glass Co Ltd filed Critical Seimi Chem Kk
Application granted granted Critical
Publication of ATE455367T1 publication Critical patent/ATE455367T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
AT03741526T 2002-07-22 2003-07-22 Halbleiterschleif prozess zu seiner herstellung und polierverfahren ATE455367T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002212679 2002-07-22
PCT/JP2003/009259 WO2004010487A1 (ja) 2002-07-22 2003-07-22 半導体用研磨剤、その製造方法及び研磨方法

Publications (1)

Publication Number Publication Date
ATE455367T1 true ATE455367T1 (de) 2010-01-15

Family

ID=30767815

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03741526T ATE455367T1 (de) 2002-07-22 2003-07-22 Halbleiterschleif prozess zu seiner herstellung und polierverfahren

Country Status (11)

Country Link
US (2) US20050126080A1 (de)
EP (1) EP1542266B1 (de)
JP (1) JP4554363B2 (de)
KR (2) KR100988749B1 (de)
CN (1) CN100369211C (de)
AT (1) ATE455367T1 (de)
AU (1) AU2003281655A1 (de)
DE (1) DE60330971D1 (de)
SG (1) SG155045A1 (de)
TW (1) TWI285668B (de)
WO (1) WO2004010487A1 (de)

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US7721415B2 (en) * 2006-04-19 2010-05-25 Headway Technologies, Inc Method of manufacturing a thin-film magnetic head
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EP2063461A4 (de) * 2006-09-13 2010-06-02 Asahi Glass Co Ltd Poliermittel für ein integriertes halbleiterschaltungsbauelement, polierverfahren und verfahren zum herstellen eines integrierten halbleiterschaltungsbauelements
WO2008032794A1 (fr) * 2006-09-15 2008-03-20 Hitachi Chemical Co., Ltd. Agent de polissage cmp, solution additive pour agent de polissage cmp, et procédé pour polir le substrat en utilisant l'agent de polissage et la solution additive
KR101388956B1 (ko) 2006-12-28 2014-04-24 가오 가부시키가이샤 연마액 조성물
JP4489108B2 (ja) * 2007-09-13 2010-06-23 株式会社東芝 半導体装置の製造方法
CN101608097B (zh) * 2009-07-14 2011-12-21 上海华明高纳稀土新材料有限公司 化学机械抛光用纳米氧化铈浆液及其制备方法
WO2013099595A1 (ja) * 2011-12-27 2013-07-04 旭硝子株式会社 研磨剤用添加剤および研磨方法
JP5957292B2 (ja) 2012-05-18 2016-07-27 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
KR102198376B1 (ko) * 2012-11-02 2021-01-04 로렌스 리버모어 내쇼날 시큐리티, 엘엘시 표면 활성의 손실없이 대전된 콜로이드의 응집을 방지하는 방법
JP6191433B2 (ja) * 2013-12-11 2017-09-06 旭硝子株式会社 研磨剤および研磨方法
SG11201607359XA (en) 2014-03-20 2016-10-28 Fujimi Inc Polishing composition, polishing method, and method for producing substrate
CN107532067B (zh) * 2015-05-08 2021-02-23 福吉米株式会社 研磨用组合物
US10421890B2 (en) * 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
JP7187770B2 (ja) 2017-11-08 2022-12-13 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
CN111673607B (zh) * 2020-04-28 2021-11-26 北京烁科精微电子装备有限公司 一种化学机械平坦化设备
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KR20070112453A (ko) * 2005-03-16 2007-11-26 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체집적 회로 장치의 제조 방법
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JP2006339594A (ja) * 2005-06-06 2006-12-14 Seimi Chem Co Ltd 半導体用研磨剤
JPWO2008032680A1 (ja) * 2006-09-11 2010-01-28 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
EP2063461A4 (de) * 2006-09-13 2010-06-02 Asahi Glass Co Ltd Poliermittel für ein integriertes halbleiterschaltungsbauelement, polierverfahren und verfahren zum herstellen eines integrierten halbleiterschaltungsbauelements

Also Published As

Publication number Publication date
AU2003281655A8 (en) 2004-02-09
CN1672246A (zh) 2005-09-21
TW200403317A (en) 2004-03-01
KR101068068B1 (ko) 2011-09-28
EP1542266A4 (de) 2005-09-14
JPWO2004010487A1 (ja) 2005-11-17
EP1542266B1 (de) 2010-01-13
DE60330971D1 (de) 2010-03-04
TWI285668B (en) 2007-08-21
EP1542266A1 (de) 2005-06-15
SG155045A1 (en) 2009-09-30
KR20100088629A (ko) 2010-08-09
AU2003281655A1 (en) 2004-02-09
US20050126080A1 (en) 2005-06-16
CN100369211C (zh) 2008-02-13
US20100055909A1 (en) 2010-03-04
WO2004010487A1 (ja) 2004-01-29
KR100988749B1 (ko) 2010-10-20
JP4554363B2 (ja) 2010-09-29
KR20050021533A (ko) 2005-03-07

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