JP4489108B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4489108B2 JP4489108B2 JP2007238364A JP2007238364A JP4489108B2 JP 4489108 B2 JP4489108 B2 JP 4489108B2 JP 2007238364 A JP2007238364 A JP 2007238364A JP 2007238364 A JP2007238364 A JP 2007238364A JP 4489108 B2 JP4489108 B2 JP 4489108B2
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- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000005498 polishing Methods 0.000 claims description 188
- 239000007788 liquid Substances 0.000 claims description 35
- 239000003945 anionic surfactant Substances 0.000 claims description 30
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 24
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- 229910052814 silicon oxide Inorganic materials 0.000 description 33
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 23
- 239000004094 surface-active agent Substances 0.000 description 18
- 238000007517 polishing process Methods 0.000 description 14
- 239000002253 acid Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 150000003863 ammonium salts Chemical class 0.000 description 8
- 229920005646 polycarboxylate Polymers 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 229920002125 Sokalan® Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 3
- -1 fatty acid salts Chemical class 0.000 description 3
- 239000004584 polyacrylic acid Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 3
- 229920002845 Poly(methacrylic acid) Chemical class 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 229920006318 anionic polymer Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- CTIFKKWVNGEOBU-UHFFFAOYSA-N 2-hexadecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O CTIFKKWVNGEOBU-UHFFFAOYSA-N 0.000 description 1
- SYSFRXFRWRDPIJ-UHFFFAOYSA-N 2-hexylbenzenesulfonic acid Chemical compound CCCCCCC1=CC=CC=C1S(O)(=O)=O SYSFRXFRWRDPIJ-UHFFFAOYSA-N 0.000 description 1
- AQQPJNOXVZFTGE-UHFFFAOYSA-N 2-octadecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O AQQPJNOXVZFTGE-UHFFFAOYSA-N 0.000 description 1
- QWHHBVWZZLQUIH-UHFFFAOYSA-N 2-octylbenzenesulfonic acid Chemical compound CCCCCCCCC1=CC=CC=C1S(O)(=O)=O QWHHBVWZZLQUIH-UHFFFAOYSA-N 0.000 description 1
- UDTHXSLCACXSKA-UHFFFAOYSA-N 3-tetradecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCCCC1=CC=CC(S(O)(=O)=O)=C1 UDTHXSLCACXSKA-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- PLUHAVSIMCXBEX-UHFFFAOYSA-N azane;dodecyl benzenesulfonate Chemical compound N.CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 PLUHAVSIMCXBEX-UHFFFAOYSA-N 0.000 description 1
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 1
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920005614 potassium polyacrylate Polymers 0.000 description 1
- HSJXWMZKBLUOLQ-UHFFFAOYSA-M potassium;2-dodecylbenzenesulfonate Chemical compound [K+].CCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HSJXWMZKBLUOLQ-UHFFFAOYSA-M 0.000 description 1
- FQLQNUZHYYPPBT-UHFFFAOYSA-N potassium;azane Chemical compound N.[K+] FQLQNUZHYYPPBT-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
図2は、本発明の一実施例に係る半導体装置の製造プロセスを工程順に示す断面図である。
下記の組成の研磨液を用い、下記の研磨条件により行なう。
砥粒:酸化セリウム0.5重量%(日立化成工業製DLS−2)
第1の界面活性剤:ポリカルボン酸アンモニウム(分子量4000):1.06重量%
第2の界面活性剤:ポリカルボン酸アンモニウム(分子量1000):0.10重量%
2.研磨条件
研磨装置:荏原製作所製F☆REX300E
研磨パッド:ニッタハース製IC1000/Suba400
研磨圧力:200hPa
トップリング/ターンテーブル回転数:107/100rpm
研磨液流量:197cc/min
<第2の研磨工程(シリコン窒化膜の露出)>
下記の組成の研磨液を用い、下記の研磨条件により行なう。
砥粒:酸化セリウム0.5重量%(日立化成工業製DLS−2)
第2の界面活性剤:ポリカルボン酸アンモニウム(分子量1000):0.1重量%
2.研磨条件
研磨装置:同上
研磨パッド:同上
研磨圧力:300hPa
トップリング/ターンテーブル回転数:66/60rpm
研磨液流量:190cc/min
以上の2段階の研磨工程により、最初に酸化セリウムとともに、高分子量(4000)のポリカルボン酸アンモニウム塩及び低分子量(1000)のポリカルボン酸アンモニウム塩を含む研磨液を用い、研磨パッドを高回転数で回転させて、研磨速度の研磨圧力応答性が大きく、平坦性の良好な研磨を行い、次いで酸化セリウムとともに低分子量(1000)のポリカルボン酸アンモニウム塩を含む研磨液で研磨を行い、シリコン窒化膜を露出させた。
第2の研磨工程の研磨圧力を150hPaとした以外は、実施例2と同様にして、シリコン酸化膜の研磨を行った。
第2の界面活性剤として、ドデシルベンゼンスルホン酸ナトリウムを用いた以外は、実施例2と同様にして、シリコン酸化膜の研磨を行った。
第1の研磨液の界面活性剤として、第1の界面活性剤(高分子量(4000)のポリカルボン酸アンモニウム塩)のみを用いた以外は、実施例1と同様にして、シリコン酸化膜の研磨を行った。
第1の研磨液の界面活性剤として、第1の界面活性剤(高分子量(4000)のポリカルボン酸アンモニウム塩)のみを用いた以外は、実施例2と同様にして、シリコン酸化膜の研磨を行った。
第1の研磨液の界面活性剤として、分子量4000のポリカルボン酸アンモニウム塩のみを用い、第2の研磨液の界面活性剤として、分子量4000のポリカルボン酸アンモニウム塩のみを用いた以外は、実施例1と同様にして、シリコン酸化膜の研磨を行った。
第2の研磨工程での研磨圧力を150hPaとした以外は、比較例2と同様にしてシリコン酸化膜の研磨を行った。
第1の研磨液の界面活性剤として、分子量1000のポリカルボン酸アンモニウム塩のみを用いた以外は、実施例1と同様にして、シリコン酸化膜の研磨を行った。
Claims (5)
- 凹部を有し、凹部以外の部分にストッパー膜を有する半導体基板上に、前記凹部を埋めるように絶縁膜を形成する工程、
酸化セリウムと第1のアニオン性界面活性剤を含む第1の研磨液を用いて化学的機械的研磨法により前記絶縁膜を研磨し、平坦化する第1の研磨工程、及び
酸化セリウムと前記第1のアニオン性界面活性剤よりも小さい分子量の第2のアニオン性界面活性剤を含む第2の研磨液を用い、前記第1の研磨工程とは異なる研磨条件で前記前記絶縁膜を研磨し、前記ストッパー膜を露出させる第2の研磨工程
を具備することを特徴とする半導体装置の製造方法。 - 前記第1の研磨液は、前記第1のアニオン性界面活性剤よりも小さい分子量のアニオン性界面活性剤を更に含有することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第1の研磨工程とは異なる研磨条件は、前記第1の研磨工程より低い研磨圧力であることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記第1の研磨工程とは異なる研磨条件は、前記第1の研磨工程より少ない研磨テーブルの回転数及び押しつけヘッドの回転数であることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記第1のアニオン性界面活性剤の分子量は、3000〜100000であり、前記第2のアニオン性界面活性剤の分子量は、100〜2500であることを特徴とする請求項1〜4のいずれかに記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007238364A JP4489108B2 (ja) | 2007-09-13 | 2007-09-13 | 半導体装置の製造方法 |
TW097134595A TWI374489B (en) | 2007-09-13 | 2008-09-09 | Method of manufacturing semiconductor device |
US12/208,372 US7829406B2 (en) | 2007-09-13 | 2008-09-11 | Method of manufacturing semiconductor device |
KR1020080090523A KR101022094B1 (ko) | 2007-09-13 | 2008-09-12 | 반도체 디바이스 제조 방법 |
Applications Claiming Priority (1)
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JP2007238364A JP4489108B2 (ja) | 2007-09-13 | 2007-09-13 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2009071062A JP2009071062A (ja) | 2009-04-02 |
JP4489108B2 true JP4489108B2 (ja) | 2010-06-23 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007238364A Expired - Fee Related JP4489108B2 (ja) | 2007-09-13 | 2007-09-13 | 半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7829406B2 (ja) |
JP (1) | JP4489108B2 (ja) |
KR (1) | KR101022094B1 (ja) |
TW (1) | TWI374489B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011176207A (ja) * | 2010-02-25 | 2011-09-08 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2016207973A (ja) * | 2015-04-28 | 2016-12-08 | 株式会社東芝 | 半導体装置の製造方法 |
CN112908834B (zh) * | 2021-02-07 | 2021-09-14 | 广西立之亿新材料有限公司 | 一种硅晶圆衬底快速绿色环保双面抛光方法 |
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JP3278532B2 (ja) | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
JP2001015460A (ja) * | 1999-06-30 | 2001-01-19 | Toshiba Corp | 半導体装置の製造方法 |
AU2003281655A1 (en) * | 2002-07-22 | 2004-02-09 | Asahi Glass Company, Limited | Semiconductor abrasive, process for producing the same and method of polishing |
JP3860528B2 (ja) | 2002-11-12 | 2006-12-20 | 株式会社東芝 | 半導体装置の製造方法 |
JP4878728B2 (ja) | 2003-11-10 | 2012-02-15 | 日立化成工業株式会社 | Cmp研磨剤および基板の研磨方法 |
KR20070055770A (ko) | 2005-11-28 | 2007-05-31 | 삼성코닝 주식회사 | 금속 배선용 화학기계적 연마 조성물 |
KR100814416B1 (ko) * | 2006-09-28 | 2008-03-18 | 삼성전자주식회사 | 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법 |
-
2007
- 2007-09-13 JP JP2007238364A patent/JP4489108B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-09 TW TW097134595A patent/TWI374489B/zh not_active IP Right Cessation
- 2008-09-11 US US12/208,372 patent/US7829406B2/en not_active Expired - Fee Related
- 2008-09-12 KR KR1020080090523A patent/KR101022094B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200931512A (en) | 2009-07-16 |
KR20090028484A (ko) | 2009-03-18 |
US20090075487A1 (en) | 2009-03-19 |
TWI374489B (en) | 2012-10-11 |
KR101022094B1 (ko) | 2011-03-17 |
JP2009071062A (ja) | 2009-04-02 |
US7829406B2 (en) | 2010-11-09 |
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