JP2011513984A - Cmpスラリー及びこれを利用した研磨方法 - Google Patents
Cmpスラリー及びこれを利用した研磨方法 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 152
- 239000002002 slurry Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 93
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 89
- 150000001875 compounds Chemical class 0.000 claims abstract description 72
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 55
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229920006318 anionic polymer Polymers 0.000 claims abstract description 24
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 27
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 25
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 17
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 12
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 7
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical group CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical group OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical group OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical group OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical group OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical group OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- YPZMPEPLWKRVLD-UHFFFAOYSA-N 2,3,4,5,6,7-hexahydroxyheptanal Chemical compound OCC(O)C(O)C(O)C(O)C(O)C=O YPZMPEPLWKRVLD-UHFFFAOYSA-N 0.000 claims description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052816 inorganic phosphate Inorganic materials 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 239000000178 monomer Substances 0.000 claims description 2
- 125000005474 octanoate group Chemical group 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 claims 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-L malate(2-) Chemical group [O-]C(=O)C(O)CC([O-])=O BJEPYKJPYRNKOW-UHFFFAOYSA-L 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000004254 Ammonium phosphate Substances 0.000 description 3
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 3
- 235000019289 ammonium phosphates Nutrition 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229940071106 ethylenediaminetetraacetate Drugs 0.000 description 2
- 239000000174 gluconic acid Substances 0.000 description 2
- 235000012208 gluconic acid Nutrition 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical group OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- -1 abrasive Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- 229920002521 macromolecule Polymers 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
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- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
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Abstract
Description
酸化セリウム研磨材と、線状陰イオン性高分子としてポリアクリル酸(Mw.:7,000)と、ヒドロキシル基及び/またはカルボキシル基を含む化合物としてグルコン酸と、燐酸基含有化合物として燐酸アンモニウム((NH4)2HPO4))を蒸留水に加えて混合してCMPスラリーを製造した。
この時、研磨材の添加量は、CMPスラリー100重量部を基準に5重量部になるようにし、前記線状陰イオン性高分子の添加量は、前記酸化セリウム研磨材100重量部を基準に10重量部、前記ヒドロキシル基及び/またはカルボキシル基を含む化合物の添加量は、酸化セリウム研磨材100重量部を基準に25重量部、そして前記燐酸基含有化合物の添加量は、酸化セリウム研磨材100重量部を基準に1.5重量部になるようにした。
下記表1に提示した通り、ヒドロキシル基及び/またはカルボキシル基を含む化合物及び燐酸基含有化合物の含有量を変化させたことを除いては、実施例1と同様な方法でCMPスラリーを製造した。
燐酸基含有化合物を使用していないことを除いては、実施例1と同様な方法でCMPスラリーを製造した。
前記実施例1〜4及び比較例1で製造されたCMPスラリーを使用して下記条件で1分間研磨を行った後で基板をきれいに洗浄して、研磨によって発生した厚さの変化を測定して研磨性能を評価した。その結果を下記表1に示した。
研磨装備:UNIPLA210(Doosan Mecatec Co.)
パッド:IC1000(Rodel Co.)
スピンドル(Spindle)速度:90rpm
プラテン(Platen)速度:90rpm
ウエハー圧力(Wafer pressure):4psi
リテーナーリング圧力(Retainer ring pressure):3.5psi
スラリー流速:200ml/min
HDPCVD(High Density Plasma chemical vapor deposition)によって10,000Å蒸着された酸化シリコン膜形成ウエハー
LPCVD(Low pressure chemical vapor deposition)によって2,000Å蒸着された窒化シリコン膜形成ウエハー
まず、各研磨対象ウエハーの上に59ポイントを各々設定し、これら各ポイント上で研磨前と研磨後の厚さを測定した。この時、研磨前と研磨後の厚さは、光学厚さ測定装備であるNanospec6100(Nanometrics Co.)を利用して測定した。このような研磨前と研磨後の厚さから各研磨対象膜(酸化シリコン膜または窒化シリコン膜)に対する研磨量を測定し、各ポイント上で測定された値に基づいてその平均値を算出した。このような研磨量の平均値及び研磨時間から、各研磨対象膜に対する研磨速度を導き出した。
前記実施例1、2、及び比較例1で各々製造したCMPスラリーを使用し、前記実験例1と同一な研磨条件で通常のDRAMパターン(STI素子分離膜のパターン中に酸化シリコン膜及び窒化シリコン膜が含まれている)が形成されたウエハーに対して1分間研磨を行った。
前記の研磨後のウエハーのうち、100μmFOXモニタリングボックスに対してAFM分析を実施して、酸化シリコン膜と窒化シリコン膜のプロファイルを測定し、これからウエハーの酸化シリコン膜と窒化シリコン膜の段差を算出して、その平均値をディッシング発生量に決定した。
101 パッド酸化膜
102 窒化シリコン膜
103 トレンチ
104 酸化シリコン膜
105 ゲート絶縁膜
Claims (18)
- 研磨材、線状陰イオン性高分子、燐酸基含有化合物、及び水を含み、
酸化シリコン膜に対するCMP研磨速度:窒化シリコン膜に対するCMP研磨速度が30:1〜50:1であるCMPスラリー。 - 前記線状陰イオン性高分子は2,000〜50,000の重量平均分子量を有する、請求項1に記載のCMPスラリー。
- 前記線状陰イオン性高分子は、アクリル酸、メタクリル酸、イタコン酸、及びマレイン酸からなる群より選択された1つ以上の単量体から得られた高分子を含む、請求項1に記載のCMPスラリー。
- 燐酸基含有化合物は、燐酸、有機燐酸塩または無機燐酸塩を含む、請求項1に記載のCMPスラリー。
- ヒドロキシル基(−OH)またはカルボキシル基(−COOH)を有する化合物をさらに含む、請求項1に記載のCMPスラリー。
- 前記ヒドロキシル基またはカルボキシル基を有する化合物は重量平均分子量が30〜500であり、ヒドロキシル基及びカルボキシル基を有する化合物である、請求項5に記載のCMPスラリー。
- 前記ヒドロキシル基またはカルボキシル基を有する化合物は、シートレート基含有化合物、グルコネート基含有化合物、マレート基含有化合物、タルタレート基含有化合物、2−ヒドロキシイソブチレート基含有化合物、アジペート基含有化合物、オクタノエート基含有化合物、スクシネート基含有化合物、エチレンジアミンテトラアセテート基含有化合物、グルタレート基含有化合物、メチレンスクシネート基含有化合物、マンノース、グリセロ−ガラクト−ヘプトース、エリトロ−マンノ−オクトース、アラビノ−ガラクト−ノンノーズ、及びグルタミンからなる群より選択された1種以上を含む、請求項5に記載のCMPスラリー。
- 前記研磨材は、シリカ、アルミナ、酸化ジルコニウム、酸化チタン、及び酸化セリウムからなる群より選択された1種以上の研磨粒子を含む、請求項5に記載のCMPスラリー。
- 前記研磨材はスラリー100重量部に対して0.1〜10重量部で含まれる、請求項1に記載のCMPスラリー。
- 前記線状陰イオン性高分子は前記研磨材100重量部に対して0.1〜40重量部で含まれ、前記燐酸基含有化合物は前記研磨材100重量部に対して0.1〜20重量部で含まれる、請求項9に記載のCMPスラリー。
- 前記研磨材の100重量部を基準に、ヒドロキシル基(−OH)またはカルボキシル基(−COOH)を有する化合物の0.1〜30重量部をさらに含む、請求項9に記載のCMPスラリー。
- pH6〜8を示す、請求項1に記載のCMPスラリー。
- 半導体素子の浅いトレンチ素子分離工程(STI工程)において、トレンチ内に埋め立てられる酸化シリコン膜の研磨または平坦化のために使用される、請求項1に記載のCMPスラリー。
- 請求項1〜12のうちのいずれか1つの項に記載されたCMPスラリーで半導体基板上の研磨対象膜を研磨する段階を含む、研磨方法。
- 前記研磨対象膜は酸化シリコン膜を含む、請求項14に記載の研磨方法。
- 半導体基板の上に所定の窒化シリコン膜パターンを形成する段階;前記窒化シリコン膜パターンが形成された半導体基板上に酸化シリコン膜を形成する段階;及び前記窒化シリコン膜が露出する時まで前記酸化シリコン膜を研磨する段階を含む、請求項15に記載の研磨方法。
- 半導体素子の浅いトレンチ素子分離工程(STI工程)に適用され、前記研磨される酸化シリコン膜が半導体素子のフィールド領域を定義する、請求項16に記載の研磨方法。
- 前記酸化シリコン膜を研磨した後にはディッシング発生量が500Å以下になる、請求項16に記載の研磨方法。
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