KR100797218B1 - Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 - Google Patents
Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 Download PDFInfo
- Publication number
- KR100797218B1 KR100797218B1 KR1020077004271A KR20077004271A KR100797218B1 KR 100797218 B1 KR100797218 B1 KR 100797218B1 KR 1020077004271 A KR1020077004271 A KR 1020077004271A KR 20077004271 A KR20077004271 A KR 20077004271A KR 100797218 B1 KR100797218 B1 KR 100797218B1
- Authority
- KR
- South Korea
- Prior art keywords
- dispersant
- salt
- cmp abrasive
- cerium oxide
- polishing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 130
- 239000000654 additive Substances 0.000 title claims abstract description 62
- 239000007788 liquid Substances 0.000 title claims abstract description 60
- 230000000996 additive effect Effects 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 39
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 114
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 114
- 239000002270 dispersing agent Substances 0.000 claims abstract description 89
- 239000002245 particle Substances 0.000 claims abstract description 73
- 239000002002 slurry Substances 0.000 claims abstract description 61
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000004744 fabric Substances 0.000 claims abstract description 12
- -1 amine salt Chemical class 0.000 claims description 36
- 229920000642 polymer Polymers 0.000 claims description 33
- 229920000058 polyacrylate Polymers 0.000 claims description 32
- 150000003839 salts Chemical class 0.000 claims description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 23
- 229920002125 Sokalan® Polymers 0.000 claims description 14
- 150000001412 amines Chemical class 0.000 claims description 14
- 239000004584 polyacrylic acid Substances 0.000 claims description 14
- 239000003082 abrasive agent Substances 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- WPKYZIPODULRBM-UHFFFAOYSA-N azane;prop-2-enoic acid Chemical compound N.OC(=O)C=C WPKYZIPODULRBM-UHFFFAOYSA-N 0.000 claims description 9
- 238000007334 copolymerization reaction Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 48
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 45
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 25
- 238000006748 scratching Methods 0.000 abstract description 11
- 230000002393 scratching effect Effects 0.000 abstract description 11
- 229910052783 alkali metal Inorganic materials 0.000 abstract description 8
- 150000001340 alkali metals Chemical class 0.000 abstract description 8
- 229910001415 sodium ion Inorganic materials 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 95
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 17
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 14
- 239000010410 layer Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000011164 primary particle Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000004438 BET method Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- KHSBAWXKALEJFR-UHFFFAOYSA-H cerium(3+);tricarbonate;hydrate Chemical compound O.[Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O KHSBAWXKALEJFR-UHFFFAOYSA-H 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000010979 pH adjustment Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000005250 alkyl acrylate group Chemical group 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- DNLDXOPTFYQILE-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]tetradecan-1-ol Chemical compound CCCCCCCCCCCCC(CO)N(CCO)CCO DNLDXOPTFYQILE-UHFFFAOYSA-N 0.000 description 1
- HVYJSOSGTDINLW-UHFFFAOYSA-N 2-[dimethyl(octadecyl)azaniumyl]acetate Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CC([O-])=O HVYJSOSGTDINLW-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- MUHFRORXWCGZGE-KTKRTIGZSA-N 2-hydroxyethyl (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCCO MUHFRORXWCGZGE-KTKRTIGZSA-N 0.000 description 1
- RFVNOJDQRGSOEL-UHFFFAOYSA-N 2-hydroxyethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCO RFVNOJDQRGSOEL-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- SYELZBGXAIXKHU-UHFFFAOYSA-N dodecyldimethylamine N-oxide Chemical compound CCCCCCCCCCCC[N+](C)(C)[O-] SYELZBGXAIXKHU-UHFFFAOYSA-N 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229940094506 lauryl betaine Drugs 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- DVEKCXOJTLDBFE-UHFFFAOYSA-N n-dodecyl-n,n-dimethylglycinate Chemical compound CCCCCCCCCCCC[N+](C)(C)CC([O-])=O DVEKCXOJTLDBFE-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- UPHWVVKYDQHTCF-UHFFFAOYSA-N octadecylazanium;acetate Chemical compound CC(O)=O.CCCCCCCCCCCCCCCCCCN UPHWVVKYDQHTCF-UHFFFAOYSA-N 0.000 description 1
- 229920002114 octoxynol-9 Polymers 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 description 1
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 229920000053 polysorbate 80 Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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Abstract
Description
항목 | 실시예 1 | 실시예 2 | 실시예 3 | 실시예 4 | 실시예 5 | 실시예 6 | |
산화세륨 슬러리: 500g | 명칭 | (A-1) | (A-1) | (A-1) | (A-2) | (A-2) | (A-1) |
1차 입자경 (㎚) | 10~60 (다결정) | 10~60 (다결정) | 10~60 (다결정) | 10~60 (다결정) | 10~60 (다결정) | 10~60 (다결정) | |
pH | 8.5 | 8.5 | 8.5 | 8.7 | 8.7 | 8.5 | |
첨가액: 500g | 분산제 | 아크릴산/ 아크릴산메틸= 3/1 | 아크릴산/ 아크릴산메틸= 3/1 | 아크릴산/ 아크릴산메틸= 3/1 | 아크릴산/ 아크릴산메틸= 3/1 | 아크릴산/ 아크릴산메틸= 3/1 | 아크릴산/ 아크릴산메틸= 10/0 |
중량 평균 분자량 | 10,000 | 10,000 | 10,000 | 10,000 | 10,000 | 10,000 | |
농도(wt%) | 1 | 2 | 6 | 2 | 2 | 3 | |
pH | 7.3 | 7.5 | 7.7 | 7.5 | 7.5 | 6.8 | |
플라즈마-CVD-TEOS-산화 규소막 연마 속도 (Å/ 분) | 2,000 | 2,000 | 1,500 | 2,000 | 2,000 | 1,800 | |
저압-CVD-질화규소막 연마 속도 (Å/분) | 40 | 20 | 20 | 20 | 20 | 20 | |
연마 속도비 (산화규소 막/질화규소막) | 50 | 100 | 75 | 100 | 100 | 90 | |
산화막 연마후 연마 긁힘 (수/㎠) | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | |
파임(디싱)량 (Å) | 150 | 120 | 100 | 130 | 130 | 80 |
항목 | 실시예 7 | 실시예 8 | 실시예 9 | 실시예 10 | 비교예 1 | 비교예 2 | |
산화세륨 슬러리: 500g | 명칭 | (B-1) | (A-1) | (A-1) | (A-1) | (A-1) | (A-1) |
1차 입자경 (㎚) | 80~150 (단결정) | 10~60 (다결정) | 10~60 (다결정) | 10~60 (다결정) | 10~60 (다결정) | 10~60 (다결정) | |
pH | 8.4 | 8.5 | 8.5 | 8.5 | 8.5 | 8.5 | |
첨가액: 500g | 분산제 | 아크릴산/ 아크릴산메틸= 3/1 | 아크릴산/ 아크릴산메틸= 10/0 | 아크릴산/ 아크릴산메틸= 3/1 | 아크릴산/ 아크릴산메틸= 10/0 | 탈이온수만 | 아크릴산/ 아크릴산메틸= 3/1 |
중량 평균 분자량 | 10,000 | 10,000 | 10,000 | 10,000 | - | 10,000 | |
농도(wt%) | 2 | 4 | 9 | 6 | - | 1 | |
pH | 7.5 | 6.5 | 7.9 | 6.0 | 7 | 7.3 | |
플라즈마-CVD-TEOS-산화규소막 연마 속도 ( Å/분) | 2,000 | 1,500 | 1,400 | 1,200 | 2,000 | 1,000 | |
저압-CVD-질화규소막 연마 속도 (Å/분) | 40 | 20 | 20 | 20 | 400 | 50 | |
연마 속도비 (산화규소 막/질화규소막) | 50 | 75 | 70 | 60 | 5 | 20 | |
산화막 연마후 연마 긁힘 (수/㎠) | 0.10 | 0.05 | 0.04 | 0.05 | 0.50 | 0.45 | |
파임(디싱)량 (Å) | 140 | 70 | 130 | 60 | 850 | 170 |
Claims (23)
- 피연마막이 형성된 기판을 연마 정반의 연마포에 눌러 가압하고, CMP 연마제를 피연마막과 연마포 사이에 공급하면서 기판과 연마 정반을 움직여 피연마막을 연마하는 기판의 연마 방법으로서, 상기 CMP 연마제가 산화세륨 입자, 분산제 및 물을 포함하는 산화세륨 슬러리와, 분산제 및 물을 포함하는 CMP 연마제용 첨가액을 각각 준비하여 연마시에 양자를 혼합하여 조제된 것인 기판의 연마 방법에 사용되고,산화세륨 슬러리 중의 분산제의 함유량이 산화세륨 입자 100 중량부에 대하여 0.01 내지 2.0 중량부이고, 산화세륨 입자의 함유량이 산화세륨 슬러리에 대하여 0.3 내지 40 중량%이며,상기 산화세륨 슬러리에 포함되는 분산제가 고분자 분산제이고, 이 고분자 분산제가 아크릴산암모늄염을 공중합 성분으로 하는 중합체, 폴리아크릴산암모늄염 또는 폴리아크릴산아민염이며, 상기 고분자 분산제의 염을 구성하지 않은 유리 암모니아 또는 아민의 비율이 10 몰% 이하인 것인산화세륨 입자, 분산제 및 물을 포함하는 산화세륨 슬러리.
- 삭제
- 제1항에 있어서, 상기 고분자 분산제의 중량 평균 분자량이 100 내지 50,000인 것인 산화세륨 슬러리.
- 삭제
- 제1항에 있어서, pH가 6 내지 10인 산화세륨 슬러리.
- 피연마막이 형성된 기판을 연마 정반의 연마포에 눌러 가압하고, CMP 연마제를 피연마막과 연마포 사이에 공급하면서 기판과 연마 정반을 움직여 피연마막을 연마하는 기판의 연마 방법으로서, 상기 CMP 연마제가 산화세륨 입자, 분산제 및 물을 포함하는 산화세륨 슬러리와, 분산제 및 물을 포함하며 연마제 입자를 포함하지 않는 CMP 연마제용 첨가액을 각각 준비하여 연마시에 양자를 혼합하여 조제된 것인 기판의 연마 방법에 사용되는, 분산제 및 물을 포함하며 연마제 입자를 포함하지 않는 CMP 연마제용 첨가액.
- 제6항에 있어서, 상기 CMP 연마제용 첨가액에 포함되는 분산제가 고분자 분산제이고, 이 고분자 분산제가 아크릴산암모늄염을 공중합 성분으로 하는 중합체, 폴리아크릴산암모늄염 또는 폴리아크릴산아민염인 것인 CMP 연마제용 첨가액.
- 제7항에 있어서, 상기 고분자 분산제의 염을 구성하지 않은 유리 암모니아 또는 아민의 비율이 10 몰% 이하인 것인 CMP 연마제용 첨가액.
- 제6항에 있어서, 상기 분산제의 함유량이 1 내지 10 중량%인 것인 CMP 연마 제용 첨가액.
- 제9항에 있어서, 상기 분산제가 폴리아크릴산암모늄염 또는 폴리아크릴산아민염인 것인 CMP 연마제용 첨가액.
- 제10항에 있어서, 상기 폴리아크릴산암모늄염 또는 폴리아크릴산아민염이 중량 평균 분자량이 1,000 내지 100,000인 것인 CMP 연마제용 첨가액.
- 제10항에 있어서, 상기 폴리아크릴산암모늄염 또는 폴리아크릴산아민염의 염을 구성하지 않은 유리 암모니아 또는 아민의 비율이 10 몰% 이하인 것인 CMP 연마제용 첨가액.
- 제6항에 있어서, pH가 4 내지 8인 CMP 연마제용 첨가액.
- 분산제 및 물을 포함하며 연마제 입자를 포함하지 않는 CMP 연마제용 첨가액으로서, 상기 분산제가 고분자 분산제이고, 이 고분자 분산제가 아크릴산암모늄염을 공중합 성분으로 하는 중합체, 폴리아크릴산암모늄염 또는 폴리아크릴산아민염이고, 첨가액 중의 분산제의 함유량이 1 내지 10 중량%이고, 분산제의 중량 평균 분자량이 1,000 내지 100,000인 것인 CMP 연마제용 첨가액.
- 제14항에 있어서, 상기 분산제의 중량 평균 분자량이 10,000 내지 40,000인 것인 CMP 연마제용 첨가액.
- 분산제 및 물을 포함하는 CMP 연마제용 첨가액으로서, 상기 분산제가 고분자 분산제이고, 이 고분자 분산제가 아크릴산암모늄염을 공중합 성분으로 하는 중합체, 폴리아크릴산암모늄염 또는 폴리아크릴산아민염이고, 첨가액 중의 분산제의 함유량이 1 내지 10 중량%이고, 분산제의 염을 구성하지 않은 유리 암모니아 또는 아민의 비율이 10 몰% 이하인 것인 CMP 연마제용 첨가액.
- 분산제와 물을 포함하며 연마제 입자를 포함하지 않는 CMP 연마제용 첨가액으로서, 상기 분산제가 폴리아크릴산암모늄염 또는 폴리아크릴산아민염이고, 중량 평균 분자량이 1,000 내지 100,000이고, 첨가액 중의 분산제의 함유량이 1 내지 10 중량%인 것인 CMP 연마제용 첨가액.
- 제17항에 있어서, 상기 분산제의 중량 평균 분자량이 10,000 내지 40,000인 것인 CMP 연마제용 첨가액.
- 분산제와 물을 포함하며 연마제 입자를 포함하지 않는 CMP 연마제용 첨가액으로서, 상기 분산제가 고분자 분산제이고, 이 고분자 분산제가 아크릴산암모늄염을 공중합 성분으로 하는 중합체, 폴리아크릴산암모늄염 또는 폴리아크릴산아민염이고, 중량 평균 분자량이 1,000 내지 100,000이고, 첨가액 중의 분산제의 함유량이 1 내지 10 중량%이고, 첨가액의 pH가 4 내지 8인 것인 CMP 연마제용 첨가액.
- 제19항에 있어서, 상기 분산제가 폴리아크릴산암모늄염 또는 폴리아크릴산아민염인 것인 CMP 연마제용 첨가액.
- 분산제와 물을 포함하는 CMP 연마제용 첨가액으로서, 상기 분산제가 폴리아크릴산암모늄염 또는 폴리아크릴산아민염이고, 상기 분산제의 염을 구성하지 않은 유리 암모니아 또는 아민의 비율이 10 몰% 이하이고, 첨가액 중의 분산제의 함유량이 1 내지 10 중량%이고, 첨가액의 pH가 4 내지 8인 것인 CMP 연마제용 첨가액.
- 분산제와 물을 포함하며 연마제 입자를 포함하지 않는 CMP 연마제용 첨가액으로서, 상기 분산제가 고분자 분산제이고, 이 고분자 분산제가 아크릴산암모늄염을 공중합 성분으로 하는 중합체, 폴리아크릴산암모늄염 또는 폴리아크릴산아민염이고, 중량 평균 분자량이 1,000 내지 40,000이고, 첨가액 중의 분산제의 함유량이 1 내지 10 중량%이고, 첨가액의 pH가 4 내지 8인 것인 CMP 연마제용 첨가액.
- 제22항에 있어서, 상기 분산제가 폴리아크릴산암모늄염 또는 폴리아크릴산아민염인 것인 CMP 연마제용 첨가액.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP36835598 | 1998-12-25 | ||
JPJP-P-1998-00368355 | 1998-12-25 | ||
PCT/JP1999/007209 WO2000039843A1 (fr) | 1998-12-25 | 1999-12-22 | Abrasif cmp, additif liquide pour abrasif cmp et procede de polissage de substrat |
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KR10-2004-7021176A Division KR20050006299A (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
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KR1020077015887A Division KR100851451B1 (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
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KR20070034640A KR20070034640A (ko) | 2007-03-28 |
KR100797218B1 true KR100797218B1 (ko) | 2008-01-23 |
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KR1020077015887A KR100851451B1 (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
KR1020047019184A KR100754103B1 (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
KR1020087002987A KR100822116B1 (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
KR10-2004-7021176A KR20050006299A (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
KR10-2001-7008089A KR100475976B1 (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
KR1020077004271A KR100797218B1 (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
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KR1020077015887A KR100851451B1 (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
KR1020047019184A KR100754103B1 (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
KR1020087002987A KR100822116B1 (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
KR10-2004-7021176A KR20050006299A (ko) | 1998-12-25 | 1999-12-22 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
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US (6) | US6783434B1 (ko) |
EP (2) | EP1148538A4 (ko) |
JP (1) | JP3649279B2 (ko) |
KR (6) | KR100851451B1 (ko) |
TW (1) | TW492095B (ko) |
WO (1) | WO2000039843A1 (ko) |
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1999
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- 2004-01-20 US US10/759,163 patent/US20040147206A1/en not_active Abandoned
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JPH10152673A (ja) * | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
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US20060186372A1 (en) | 2006-08-24 |
US20040147206A1 (en) | 2004-07-29 |
KR20080016979A (ko) | 2008-02-22 |
KR20070034640A (ko) | 2007-03-28 |
EP1148538A1 (en) | 2001-10-24 |
EP1566421A3 (en) | 2009-10-21 |
KR20070087037A (ko) | 2007-08-27 |
KR20050005499A (ko) | 2005-01-13 |
EP1566421B1 (en) | 2014-12-10 |
US20050118820A1 (en) | 2005-06-02 |
US20060197054A1 (en) | 2006-09-07 |
EP1148538A4 (en) | 2009-10-21 |
US20050269295A1 (en) | 2005-12-08 |
TW492095B (en) | 2002-06-21 |
US7163644B2 (en) | 2007-01-16 |
KR100475976B1 (ko) | 2005-03-15 |
KR100754103B1 (ko) | 2007-08-31 |
WO2000039843A1 (fr) | 2000-07-06 |
KR100822116B1 (ko) | 2008-04-15 |
JP3649279B2 (ja) | 2005-05-18 |
KR20050006299A (ko) | 2005-01-15 |
US6783434B1 (en) | 2004-08-31 |
EP1566421A2 (en) | 2005-08-24 |
KR100851451B1 (ko) | 2008-08-08 |
KR20010108048A (ko) | 2001-12-07 |
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