KR100786949B1 - 연마 선택도 조절 보조제 및 이를 함유한 cmp 슬러리 - Google Patents
연마 선택도 조절 보조제 및 이를 함유한 cmp 슬러리 Download PDFInfo
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- KR100786949B1 KR100786949B1 KR1020060107111A KR20060107111A KR100786949B1 KR 100786949 B1 KR100786949 B1 KR 100786949B1 KR 1020060107111 A KR1020060107111 A KR 1020060107111A KR 20060107111 A KR20060107111 A KR 20060107111A KR 100786949 B1 KR100786949 B1 KR 100786949B1
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- 238000005498 polishing Methods 0.000 title claims abstract description 66
- 239000002002 slurry Substances 0.000 title claims abstract description 52
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Abstract
Description
선형의 중합체산 | 그라프트형 중합체산 | |
실시예 1 | 100 중량부 | 0 중량부 |
실시예 2 | 90 중량부 | 10 중량부 |
실시예 3 | 75 중량부 | 25 중량부 |
실시예 4 | 50 중량부 | 50 중량부 |
실시예 5 | 25 중량부 | 75 중량부 |
실시예 6 | 0 중량부 | 100 중량부 |
Pad | ICI400(Rodel, USA) |
웨이퍼 두께 측정 | Nanospec6100(Nanometerics, USA) |
Head speed | 90 rpm |
Spindle speed | 90 rpm |
Down force | 4 psi |
Back pressure | 0 psi |
슬러리 공급량 | 100 Ml/min |
구분 | 산화막 연마율 (Å/min) | WIWNU (%) | 질화막연마율 (Å/min) | 제거선택비 |
실시예 1 | 4244 | 2.99 | 68 | 62:1 |
실시예 2 | 4234 | 3.58 | 67 | 63:1 |
실시예 3 | 4268 | 2.89 | 64 | 67:1 |
실시예 4 | 4380 | 3.48 | 59 | 74:1 |
실시예 5 | 4518 | 2.78 | 55 | 82:1 |
실시예 6 | 4541 | 2.79 | 50 | 91:1 |
비교예 1 | 5241 | 5.92 | 957 | 5:1 |
비교예 2 | 4182 | 7.34 | 71 | 59:1 |
[주] WIWNU(Within Wafer Non-Uniformity) - 연마 후 웨이퍼의 두께 편차(S.D)를 평균두께로 나누어 준 값, WIWNU가 낮을수록 평탄도가 좋음. |
Claims (17)
- a) 중량평균분자량이 2,000 내지 50,000인 선형의 중합체산 및 중량평균분자량이 1,000 내지 20,000이고 주쇄 및 측쇄로 구성된 그라프트 형태(graft-type)의 중합체산의 혼합물; 및 b) 염기성 물질을 포함하는 염을 포함하며, 양전하를 띠는 재료와 음전하를 띠는 재료를 동시에 연마시 양전하를 띠는 재료에 흡착하여 음전하를 띠는 재료에 대한 연마 선택성을 높이는 보조제.
- a) 중량평균분자량이 2,000 내지 50,000인 선형의 중합체산 및 중량평균분자량이 1,000 내지 20,000이고 주쇄 및 측쇄로 구성된 그라프트 형태(graft-type)의 중합체산의 혼합물; 및 b) 염기성 물질을 포함하는 CMP(chemical mechanical polishing) 슬러리용 보조제.
- 제1항 또는 제2항에 있어서, 상기 선형의 중합체산은 카르복실기를 포함하는 화합물인 것이 특징인 보조제.
- 제3항에 있어서, 상기 카르복실기는 아크릴산, 메타아크릴산, 이타코닉산, 및 말레익산으로 이루어지는 군으로부터 1 종 이상 선택되는 것이 특징인 보조제.
- 제1항 또는 제2항에 있어서, 상기 그라프트형 중합체산에서 측쇄의 길이는 분자량이 500 내지 2,000이고, 주쇄의 길이는 분자량이 500 내지 15,000인 것이 특징인 보조제.
- 제1항 또는 제2항에 있어서, 상기 그라프트형의 중합체산은 측쇄로 수산화기, 카르복실기, 및 술폰산기로 구성된 군에서 1종이상 선택된 작용기를 함유하는 에틸렌성 불포화 단량체의 중합 또는 공중합으로부터 유래된 매크로 단위체(macro-unit) 및 주쇄로 카르복실기 함유 에틸렌성 불포화 단량체로부터 유래된 단위체(unit)를 포함하는 것이 특징인 보조제.
- 제7항에 있어서, 상기 알콕시폴리알킬렌글리콜모노(메타)아크릴산 에스테르 단량체가 중합체산 내 10 내지 50 중량%로 함유되는 것이 특징인 보조제.
- 제6항에 있어서, 상기 그라프트형의 중합체산의 주쇄에 존재하는 카르복실기 함유 에틸렌성 불포화 단량체로부터 유래된 단위체는 메타크릴산 또는 아크릴산으로부터 유래된 것이 특징인 보조제.
- 제6항에 있어서, 상기 그라프트형의 중합체산의 주쇄에 존재하는 카르복실기 함유 에틸렌성 불포화 단량체로부터 유래된 단위체는 총 주쇄성분에 대하여 65 중량부 이상 100중량부 이하로 포함되는 있는 것이 특징인 보조제.
- 제1항 또는 제2항에 있어서, 상기 b)의 염기성 물질이 수산화암모늄 또는 염기성 아민인 것이 특징인 보조제.
- 제1항 또는 제2항에 있어서, pH가 4.5 내지 8.8인 것이 특징인 보조제.
- a) 제1항 또는 제2항에 기재된 보조제;b) 연마 입자; 및c) 물을 포함하는 CMP 슬러리.
- 제13항에 있어서, 보조제 0.1 내지 10 중량%; 연마입자 0.1 내지 10 중량%를 함유하고, 물은 조성물 총 100중량%를 맞추는 함량으로 포함되어 있는 것이 특징인 CMP 슬러리.
- 제13항에 기재된 CMP 슬러리를 사용한 얕은 트랜치 소자 분리(shallow trench isolation, STI) 방법.
- 연마시 중량평균분자량이 2,000 내지 50,000인 선형의 중합체산 및 중량평균분자량이 1,000 내지 20,000이고 주쇄 및 측쇄로 구성된 그라프트 형태(graft-type)의 중합체산의 혼합물을 사용하여, 양전하를 띠는 재료 대비 음전하를 띠는 재료의 연마 선택비를 조절하는 방법.
- 제16항에 있어서, 연마 선택비를 50:1 내지 100:1 범위 내에서 조절할 수 있는 것이 특징인 방법.
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