ATE527331T1 - Zusatz zu cmp-aufschlämmung zur gezielten einstellung der polierselektivität - Google Patents

Zusatz zu cmp-aufschlämmung zur gezielten einstellung der polierselektivität

Info

Publication number
ATE527331T1
ATE527331T1 AT06824020T AT06824020T ATE527331T1 AT E527331 T1 ATE527331 T1 AT E527331T1 AT 06824020 T AT06824020 T AT 06824020T AT 06824020 T AT06824020 T AT 06824020T AT E527331 T1 ATE527331 T1 AT E527331T1
Authority
AT
Austria
Prior art keywords
polyelectrolyte
adjuvant
polishing selectivity
linear
polishing
Prior art date
Application number
AT06824020T
Other languages
English (en)
Inventor
Gi-Ra Yi
Jong-Pil Kim
Jung-Hee Lee
Kwang-Ik Moon
Chang Bum Ko
Soon-Ho Jang
Seung-Beom Cho
Young Jun Hong
Original Assignee
Lg Chemical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Chemical Ltd filed Critical Lg Chemical Ltd
Application granted granted Critical
Publication of ATE527331T1 publication Critical patent/ATE527331T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT06824020T 2005-12-08 2006-12-08 Zusatz zu cmp-aufschlämmung zur gezielten einstellung der polierselektivität ATE527331T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050119532 2005-12-08
PCT/KR2006/005314 WO2007067001A1 (en) 2005-12-08 2006-12-08 Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same

Publications (1)

Publication Number Publication Date
ATE527331T1 true ATE527331T1 (de) 2011-10-15

Family

ID=38123094

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06824020T ATE527331T1 (de) 2005-12-08 2006-12-08 Zusatz zu cmp-aufschlämmung zur gezielten einstellung der polierselektivität

Country Status (8)

Country Link
US (2) US8163650B2 (de)
EP (1) EP1957599B1 (de)
JP (1) JP4851535B2 (de)
KR (1) KR100786949B1 (de)
CN (1) CN101326257B (de)
AT (1) ATE527331T1 (de)
TW (1) TWI374930B (de)
WO (1) WO2007067001A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100832993B1 (ko) * 2006-04-14 2008-05-27 주식회사 엘지화학 Ｃｍｐ 슬러리용 보조제
EP2406038B1 (de) * 2009-03-11 2022-01-05 Saint-Gobain Abrasives, Inc. Schleifartikel mit kondensierten zirkon-aluminium-körnern mit verbesserter form
KR101180401B1 (ko) 2009-09-23 2012-09-10 주식회사 엘지화학 화학적 기계적 연마용 슬러리 조성물 및 연마방법
EP2489714B1 (de) 2009-10-13 2015-08-12 LG Chem, Ltd. Schlammzusammensetzung für chemisch-mechanisches polieren und polierverfahren
KR101292328B1 (ko) * 2010-02-04 2013-08-01 주식회사 엘지화학 균일한 입자크기 분포를 갖는 산화세륨 나노분말 및 그 제조방법
IN2014CN00877A (de) * 2011-08-09 2015-04-03 Basf Se
US20230220240A1 (en) * 2020-06-30 2023-07-13 Jsr Corporation Method for manufacturing abrasive grains, composition for chemical mechanical polishing, and method for chemical mechanical polishing

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EP0322721B1 (de) 1987-12-29 1993-10-06 E.I. Du Pont De Nemours And Company Feine Polierzusammensetzung für Plaketten
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
JPH10154672A (ja) 1996-09-30 1998-06-09 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JPH10106988A (ja) 1996-09-30 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
EP0853335A3 (de) 1997-01-10 1999-01-07 Texas Instruments Incorporated Suspension und Verfahren zum mechnisch-chemischen Polieren von Halbleiteranordnungen
US6723143B2 (en) * 1998-06-11 2004-04-20 Honeywell International Inc. Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials
JP4744656B2 (ja) 1998-10-08 2011-08-10 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
EP1148538A4 (de) 1998-12-25 2009-10-21 Hitachi Chemical Co Ltd Cmp-schleifmittel, flüssigzusatz für dasselbe und substratpoliermethode
DE60015411T2 (de) 1999-03-18 2005-10-27 Kabushiki Kaisha Toshiba, Kawasaki Wässerige Dispersionsaufschlämmung für chemisch-mechanisches Polierverfahren
KR20050118314A (ko) 1999-06-18 2005-12-16 히다치 가세고교 가부시끼가이샤 Ｃｍｐ연마제, 이것을 사용한 기판의 연마방법과반도체장치의 제조방법 및 ｃｍｐ연마제용 첨가제
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KR100464429B1 (ko) * 2002-08-16 2005-01-03 삼성전자주식회사 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
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KR100577348B1 (ko) 2003-05-06 2006-05-08 한화석유화학 주식회사 얕은 트렌치 소자 분리용 화학적 기계적 연마 슬러리
KR100539983B1 (ko) 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
KR101053653B1 (ko) 2003-07-01 2011-08-02 주식회사 동진쎄미켐 산화세륨 연마제를 이용한 화학 기계적 연마 슬러리조성물
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
EP1844122B1 (de) * 2004-12-29 2013-02-20 LG Chem, Ltd. Zusatzstoff zu cmp-aufschlämmung
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Also Published As

Publication number Publication date
US8652967B2 (en) 2014-02-18
US20070132058A1 (en) 2007-06-14
EP1957599B1 (de) 2011-10-05
TW200728440A (en) 2007-08-01
US8163650B2 (en) 2012-04-24
TWI374930B (en) 2012-10-21
KR20070061343A (ko) 2007-06-13
EP1957599A4 (de) 2010-04-28
CN101326257B (zh) 2012-02-15
JP2009518851A (ja) 2009-05-07
KR100786949B1 (ko) 2007-12-17
EP1957599A1 (de) 2008-08-20
US20120187333A1 (en) 2012-07-26
CN101326257A (zh) 2008-12-17
WO2007067001A1 (en) 2007-06-14
JP4851535B2 (ja) 2012-01-11

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