ATE527331T1 - Zusatz zu cmp-aufschlämmung zur gezielten einstellung der polierselektivität - Google Patents
Zusatz zu cmp-aufschlämmung zur gezielten einstellung der polierselektivitätInfo
- Publication number
- ATE527331T1 ATE527331T1 AT06824020T AT06824020T ATE527331T1 AT E527331 T1 ATE527331 T1 AT E527331T1 AT 06824020 T AT06824020 T AT 06824020T AT 06824020 T AT06824020 T AT 06824020T AT E527331 T1 ATE527331 T1 AT E527331T1
- Authority
- AT
- Austria
- Prior art keywords
- polyelectrolyte
- adjuvant
- polishing selectivity
- linear
- polishing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 5
- 239000002002 slurry Substances 0.000 title abstract 3
- 229920000867 polyelectrolyte Polymers 0.000 abstract 8
- 239000002671 adjuvant Substances 0.000 abstract 4
- 239000002801 charged material Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20050119532 | 2005-12-08 | ||
| PCT/KR2006/005314 WO2007067001A1 (en) | 2005-12-08 | 2006-12-08 | Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE527331T1 true ATE527331T1 (de) | 2011-10-15 |
Family
ID=38123094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06824020T ATE527331T1 (de) | 2005-12-08 | 2006-12-08 | Zusatz zu cmp-aufschlämmung zur gezielten einstellung der polierselektivität |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8163650B2 (de) |
| EP (1) | EP1957599B1 (de) |
| JP (1) | JP4851535B2 (de) |
| KR (1) | KR100786949B1 (de) |
| CN (1) | CN101326257B (de) |
| AT (1) | ATE527331T1 (de) |
| TW (1) | TWI374930B (de) |
| WO (1) | WO2007067001A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100832993B1 (ko) | 2006-04-14 | 2008-05-27 | 주식회사 엘지화학 | Ｃｍｐ 슬러리용 보조제 |
| JP5669764B2 (ja) * | 2009-03-11 | 2015-02-18 | サンーゴバン アブレイシブズ，インコーポレイティド | 改善された形状を有する融解ジルコニアアルミナ砥粒を含む研磨物品 |
| KR101180401B1 (ko) | 2009-09-23 | 2012-09-10 | 주식회사 엘지화학 | 화학적 기계적 연마용 슬러리 조성물 및 연마방법 |
| CN102648265B (zh) | 2009-10-13 | 2014-12-10 | 株式会社Lg化学 | Cmp浆料组合物及抛光方法 |
| KR101292328B1 (ko) | 2010-02-04 | 2013-08-01 | 주식회사 엘지화학 | 균일한 입자크기 분포를 갖는 산화세륨 나노분말 및 그 제조방법 |
| IN2014CN00877A (de) * | 2011-08-09 | 2015-04-03 | Basf Se |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0322721B1 (de) | 1987-12-29 | 1993-10-06 | E.I. Du Pont De Nemours And Company | Feine Polierzusammensetzung für Plaketten |
| US5614444A (en) * | 1995-06-06 | 1997-03-25 | Sematech, Inc. | Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
| JPH10154672A (ja) | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| JPH10106988A (ja) | 1996-09-30 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| EP0853335A3 (de) | 1997-01-10 | 1999-01-07 | Texas Instruments Incorporated | Suspension und Verfahren zum mechnisch-chemischen Polieren von Halbleiteranordnungen |
| US6723143B2 (en) * | 1998-06-11 | 2004-04-20 | Honeywell International Inc. | Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials |
| JP4744656B2 (ja) | 1998-10-08 | 2011-08-10 | 日立化成工業株式会社 | Ｃｍｐ研磨剤及び基板の研磨方法 |
| US6783434B1 (en) | 1998-12-25 | 2004-08-31 | Hitachi Chemical Company, Ltd. | CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate |
| KR100447552B1 (ko) | 1999-03-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 수계 분산체 및 반도체 장치의 제조에 사용하는 화학 기계연마용 수계 분산체 및 반도체 장치의 제조 방법 및 매립배선의 형성 방법 |
| DE60031857T2 (de) | 1999-06-18 | 2007-09-13 | Hitachi Chemical Co., Ltd. | Verwendung eines cmp schleifmittels |
| JP4555936B2 (ja) | 1999-07-21 | 2010-10-06 | 日立化成工業株式会社 | Ｃｍｐ研磨液 |
| JP4386500B2 (ja) | 1999-07-27 | 2009-12-16 | シチズン狭山株式会社 | 円板状体搬送装置 |
| JP2001319900A (ja) | 2000-05-10 | 2001-11-16 | Toshiba Ceramics Co Ltd | 半導体基板の研磨方法 |
| US6964923B1 (en) * | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
| JP3993369B2 (ja) * | 2000-07-14 | 2007-10-17 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100481651B1 (ko) * | 2000-08-21 | 2005-04-08 | 가부시끼가이샤 도시바 | 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법 |
| KR100464429B1 (ko) * | 2002-08-16 | 2005-01-03 | 삼성전자주식회사 | 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법 |
| US6632259B2 (en) * | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| KR100475457B1 (ko) | 2001-11-15 | 2005-03-08 | 삼성전자주식회사 | 슬러리용 첨가제 조성물, 이를 포함하는 슬러리 조성물 및연마 방법 |
| EP1448737B1 (de) * | 2001-11-15 | 2012-01-25 | Samsung Electronics Co., Ltd. | Aufschlämmungzusammensetzung enthaltend additivzusammensetzung sowie deren verwendung als poliermittel |
| JP3878016B2 (ja) * | 2001-12-28 | 2007-02-07 | 株式会社荏原製作所 | 基板研磨装置 |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US6821309B2 (en) * | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
| US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
| KR100497608B1 (ko) | 2002-08-05 | 2005-07-01 | 삼성전자주식회사 | 슬러리 조성물 및 이의 제조 방법과 이를 사용한 연마 방법 |
| KR100494117B1 (ko) | 2002-12-26 | 2005-06-13 | 매그나칩 반도체 유한회사 | 반도체 소자의 얕은 트랜치 소자분리막 형성방법 |
| KR100577348B1 (ko) | 2003-05-06 | 2006-05-08 | 한화석유화학 주식회사 | 얕은 트렌치 소자 분리용 화학적 기계적 연마 슬러리 |
| KR100539983B1 (ko) | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Ｃｍｐ용 세리아 연마제 및 그 제조 방법 |
| KR101053653B1 (ko) | 2003-07-01 | 2011-08-02 | 주식회사 동진쎄미켐 | 산화세륨 연마제를 이용한 화학 기계적 연마 슬러리조성물 |
| US7384871B2 (en) * | 2004-07-01 | 2008-06-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| WO2006071063A1 (en) * | 2004-12-29 | 2006-07-06 | Lg Chem, Ltd. | Adjuvant for chemical mechanical polishing slurry |
| KR100786950B1 (ko) * | 2004-12-29 | 2007-12-17 | 주식회사 엘지화학 | Ｃｍｐ 슬러리용 보조제 |
-
2006
- 2006-11-01 KR KR1020060107111A patent/KR100786949B1/ko active IP Right Grant
- 2006-12-06 TW TW095145382A patent/TWI374930B/zh active
- 2006-12-06 US US11/634,238 patent/US8163650B2/en active Active
- 2006-12-08 AT AT06824020T patent/ATE527331T1/de not_active IP Right Cessation
- 2006-12-08 WO PCT/KR2006/005314 patent/WO2007067001A1/en active Application Filing
- 2006-12-08 JP JP2008544261A patent/JP4851535B2/ja active Active
- 2006-12-08 CN CN2006800464137A patent/CN101326257B/zh active Active
- 2006-12-08 EP EP06824020A patent/EP1957599B1/de active Active
-
2012
- 2012-03-15 US US13/420,815 patent/US8652967B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007067001A1 (en) | 2007-06-14 |
| US8163650B2 (en) | 2012-04-24 |
| US20070132058A1 (en) | 2007-06-14 |
| TWI374930B (en) | 2012-10-21 |
| US8652967B2 (en) | 2014-02-18 |
| US20120187333A1 (en) | 2012-07-26 |
| TW200728440A (en) | 2007-08-01 |
| CN101326257A (zh) | 2008-12-17 |
| EP1957599A4 (de) | 2010-04-28 |
| CN101326257B (zh) | 2012-02-15 |
| EP1957599B1 (de) | 2011-10-05 |
| KR20070061343A (ko) | 2007-06-13 |
| KR100786949B1 (ko) | 2007-12-17 |
| EP1957599A1 (de) | 2008-08-20 |
| JP2009518851A (ja) | 2009-05-07 |
| JP4851535B2 (ja) | 2012-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |