TW201241165A - Polishing agent and polishing method - Google Patents

Polishing agent and polishing method Download PDF

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Publication number
TW201241165A
TW201241165A TW101112836A TW101112836A TW201241165A TW 201241165 A TW201241165 A TW 201241165A TW 101112836 A TW101112836 A TW 101112836A TW 101112836 A TW101112836 A TW 101112836A TW 201241165 A TW201241165 A TW 201241165A
Authority
TW
Taiwan
Prior art keywords
polishing
abrasive
polished
cerium oxide
mass
Prior art date
Application number
TW101112836A
Other languages
Chinese (zh)
Inventor
Yuiko YOSHIDA
Iori Yoshida
Satoshi Takemiya
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW201241165A publication Critical patent/TW201241165A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention relates to a polishing agent for polishing a surface to be polished of an object to be polished. The polishing agent contains first silicon oxide particles having an average primary particle diameter of 5-30 nm, second silicon oxide particles having an average primary particle diameter of 40-125 nm, and water. The ratio of the first silicon oxide particles relative to the total of the first silicon oxide particles and the second silicon oxide particles is 0.7% by mass or more but less than 60% by mass.

Description

201241165 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種用以對研磨對象物之被研磨面進行研 磨之研磨劑及研磨方法。 【先前技術】 作為期待今後大有發展之LED(Light-Emitting Diode，發 光二極體）或功率裝置用之基材，藍寶石（α_Αΐ2〇3)或碳化 石夕（SiC)、氮化鎵（GaN)等化合物單晶晶圓之製造、加工技 術受到關注。因於該等基板上形成GaN等結晶薄膜而裝置 化’故遇為結晶學上亦為低缺陷、高品質之表面較為重 要，為獲得該等低缺陷、高平滑之表面，化學機械研磨 (Chemical Mechanical P〇iishing，以下亦有時稱作(：]^^)技 術受到關注。然而，藍寶石、Sic、GaN均為硬度非常 问，且化學穩定性亦較高，因此尤其於決定品質之最終階 段之研磨中，難以一面確保品質一面以高效率進行研磨’ 從而存在研磨步驟變得非常長之問題。 於決定該等單晶基板之品質之最終研磨中，迄今為止大 多使用氧化♦微粒子。至今亦已進行有若干次使用氧化石夕 微粒子提高研磨效率（研磨速度）之嘗試，且提出有提高研 磨粒濃度、以特定比例混合粒徑不同之2種以上之研磨粒 (參照專利文獻1 )、增大研磨壓力/旋轉速度等。 ’ 藉由該等方法，於上述單晶 是最終階段之研磨中，雖可一 高品質一面將研磨效率提高至 基板之化學機械研磨、尤其 面將被研磨面之品質維持為 某水準，但仍進而期望開 163767.doc 201241165 單晶基板之 發出用以一面維持南品質一面效率更佳地進〜 化學機械研磨之研磨劑或研磨方法。 先前技術文獻 專利文獻 專利文獻1:日本專利第4253 141號公報 【發明内容】 發明所欲解決之問題 本發明係為解決上述問題而完成者’其目的在於提供一 種對於研磨對象物可一面將被研磨面維持為高品質一面以 更高之效率進行研磨之研磨劑及研磨方法。 解決問題之技術手段 本發明提供-種具有以下構成之心對研磨對象物之被 研磨面進行研磨之研磨劑。 [1]一種研磨劑，其係用以對研磨對象物之被研磨面進 行研磨者，其含有平均一次粒徑為5〜3〇 nm之第丨氧化矽微 粒子、平均一次粒徑為40〜125 nm之第2氧化矽微粒子、及 水，且上述第1氧化矽微粒子於上述第丨氧化矽微粒子與第 2氧化矽微粒子之合計量中所占之比例為〇7質量％以上且 未達60質量％ ^ [2] 如上述[1]之研磨劑，其中上述第2氧化矽微粒子之平 均一次粒徑為45〜110 nm 〇 [3] 如上述[1]或p]之研磨劑，其中上述第丨氧化矽微粒子 之平均一次粒徑為5〜1 5 nm。 [4] 如上述[1]至[3]中任一項之研磨劑，其中上述第丨氧化 163767.doc -4- 201241165 石夕微粒子於上述第1氧化矽微粒子與第2氧化矽微粒子之合 計量令所占之比例為1〜55質量％。 [5J如上述[1]至[3]_任一項之研磨劍，其中上述第1氧化 石夕微粒子於上述第丨氧化矽微粒子與第2氧化矽微粒子之合 計量中所占之比例為3〜50質量％。 [6] 如上述[1]至[5]中任一項之研磨劑，其中上述第1氧化 矽微粒子與第2氧化矽微粒子之合計量相對於研磨劑總質 量之比例為〇·〇1〜50質量％。 又，本發明又提供一種具有以下構成之用以對研磨對象 物之被研磨面進行研磨之研磨方法。 [7] 種研磨方法，其係將研磨劑供給至研磨塾，使研 磨對象物之被研磨面與上述研磨墊接觸，藉由兩者間之相 對運動進行研磨者，且使用如上述π]至[6]中任一項之研 磨劑作為上述研磨劑。 [8] 如上述[7]之研磨方法，其中上述研磨塾為包含基材 層與表面層之研磨》，該纟面層配設於上述基材層之主面 上，具備與上述研磨對象物之被研磨面接觸之表面，且具 有於該表面開孔並沿厚度方向伸長之多個微細孔。 m如上述[8]之研磨方法’其中上述研磨塾之表面層之 依據JIS K 6253所測定之蕭氏A硬度為卜65。 [10]如上述[8]或[9]之研磨方法，其中上述表面層所具有 之微細孔之平均開孔徑為丨〜65 μιη。 發明之效果 根據本發明之研磨劑及使用其之研磨方法，對於研磨對 163767.doc 201241165 象物可一面將被研磨面維持為高品質一面以高效率進行研 磨。 【實施方式】 以下’對本發明之實施形態進行說明。 [研磨劑] 本發明之研磨劑係用以對研磨對象物之被研磨面進行研 磨者，其含有平均一次粒徑為5〜3〇 nm之第i氧化矽微粒 子、平均一次粒徑為4〇〜125 nm之第2氧化矽微粒子、及 水，且上述第1氧化矽微粒子於上述第i氧化矽微粒子與第 2氧化矽微粒子之合計量中所占之比例為〇7質量％以上且 未達60質量％。 於本發明之研磨劑中，第1氧化石夕微粒子及第2氧化石夕微 粒子係作為研磨粒而使帛。於本發明之研磨财，將第！ 氧化石夕微粒子之平均一次粒徑及第2氧化石夕微粒子之平均 一次粒徑分㈣為上述範圍m述㈣_調配於研 磨劑中，藉此於研磨對象物之被研磨面之研磨時，古玄等2 種粒徑之研磨粒於提高研磨性之方向上相互作用，而獲得 較高之研磨速度。 於本發明之研磨财’作為第1氧切微粒子之研磨粒 除表現出作為研磨粒之效果以外，亦藉由與第2氧化石夕微 /立子之相互作用或單獨發揮作用而表現出其他效果。且體 =，可列舉：循環使用時之研磨粒之凝聚抑制'循環使 用時之研磨劑之邱值變化抑制、被研磨物 被研磨物之基板邊緣部之塌邊（面塌陷）抑制、增大=塵 163767.doc 201241165 力時之研磨速度之上升幅度之提高、施加熱時之研磨速度 之上升幅度之提高。以下’具體地說明該等效果。 對本發明之研㈣之循環使料之研磨粒之凝聚抑制效 果進行說明。眾所周知僅含有第2氧化石夕微粒子之研磨劑 若循環使用，則因被研磨物發揮如聚糊般之作用，而使第 2氧化㈣粒子彼此凝聚。於將第！氧切微粒子之平均一 次粒徑及第2氧切微粒子之平均-次粒徑分別設為上述 範圍，並以上述調配比例調配之本發明之研磨劑中，於循 壤使用時，藉由^氧切微粒子附著於第❻切微粒子 上，而可抑制第2氧化石夕微粒子彼此凝聚，第！氧化石夕微粒 子作為凝聚抑制劑發揮功能。 對本發明之研磨劑之循環使用時之研磨劑之阳值變化抑 ::文果進行說明。眾所周知僅含有第2氧切微粒 ^劑於《使㈣，因被研磨物彳“研磨射，而引 磨劑之pH值變動βs / 及笛… 夕微粒子之平均-次粒控 =2氧切微粒子之平均—次粒徑分別設為上述㈣， 並以上述凋配比例調配 時，柄月之研磨财，於循環使用 作用子之較大比表面積所產生之緩衝 為H/ 而可抑制_之變動，第1氧化石夕微粒子作 為pH值變動抑制劑發揮功能。 對之:磨劑之被研磨物之平滑性提高效果進行說 研二所周知破研磨物之平滑性受到作為研磨粒而含有於 π中之粒子之粒徑之影響較大。於粒徑較大之= '造成到痕等損傷’有平滑性惡化之傾向。於粒徑 163767.doc 201241165 較小之情形時，有平滑性提高之傾向。因此，於僅含有第 2氧化矽微粒子之研磨劑中，基於上述原因而平滑性惡 化，與此相對，於將第〗氧化矽微粒子之平均—次粒徑2 第2氧化矽微粒子之平均一次粒徑分別設為上述範圍，並 以上述調配比例調配之本發明之研磨劑中，由於第丨氧化 石夕微粒子之比表面積較大且粒子數較多，故而與被研磨面 之接觸概率提高’更均勻地接觸被研磨面之機會增多，因 此可提高平滑性，第1氧化石夕微粒子作為平滑性提高劑發 揮功能。 對本發明之研磨劑之被研磨物之基板邊緣部之塌邊抑制 效果進行制（以下亦有時將塌邊記作面塌陷）。幕所周知 被研磨物之基板邊緣部之面塌陷受到作為研磨粒而含有於 研磨劑中之粒子之粒徑之影響較大。粒徑越大越有惡化之 傾向’藉由減小粒徑有改善之傾向。因此，於僅含有第2 氧化石夕微粒子之研磨劑中，基於上述原因而面塌陷惡化， 與此相對’於將第！氧切微粒子之平均一次粒徑及第靖 化夕微粒子之平均一次粒技分別設為上述範圍，並以上述 調配比例調配之太發明夕m & Λ丨丄 不發月之研磨劑中，由於第1氧化矽微粒 表面積較大且粒子數較多，故而與被研磨面之接觸 概率提高，更均勻地接觸被研磨面之機會增多，藉此可分 散施加於基板邊緣部之壓力而抑制面塌陷，第】氧化石夕微 粒子作為面塌陷抑制劑發揮功能。 對本發明之研磨劑之增大研磨壓力時之研磨速度之上升 幅度維持效果進行說明。眾所周知研磨速度如下述普勒斯 163767.doc 201241165 頓（Preston)式所示，與加工壓力、加工時之轉速（相對速 度）成比例。普勒斯頓係數受到研磨墊或研磨劑之材質、 組成、被研磨物之磨耗特性等之影響。 M/t，pv(M:研磨量，t :研磨時間，η :普勒斯頓係 數’ Ρ:加工壓力，ν:相對速度） 於研磨墊、研磨劑之材質、被研磨物為共同之情形時， 可知普勒斯頓係數受到研磨劑組成之影響，於進而固定由 加工時之轉速所算出之相對速度之狀態下，可由研磨速度 相對於研磨壓力之變化估算出研磨劑組成固有之普勒斯頓 係數。又，同樣地於固定加工壓力之狀態下，亦可由研磨 速度相對於相對速度之變化估算出研磨劑組成固有之普勒 斯頓係數。僅含有第2氧化矽微粒子之研磨劑於在固定相 對速度之狀態下增大研磨壓力而研磨被研磨物之情形時， 於低壓區域中研磨速度成比例地上升，但於進—步增大研 磨壓力之高壓區域中進行研磨之情形時，研磨速度之上升 幅度明顯降低。 即’意味著研磨劑組成固有之普勒斯頓係數於高壓區域 中明顯變小’意味著無法自低壓至高壓維持普勒斯頓係 數。與此相對’於將第1氧化矽微粒子之平均—次粒徑及 第2氧化矽微粒子之平均一次粒徑分別設為上述範圍，並 以上述調配比例調配之本發明之研磨劑中，於增大研磨磨 力而研磨被研磨物之情形時，可自低壓至高壓區域維持研 磨速度之上升幅度。即，意味著可自低壓至高壓維持f勒 斯頓係數。雖其原因尚未確定，但於僅含有第2氧化石夕微 163767.doc 201241165 粒子之情形時，高壓區域中所賦予之荷重之能量因粒子自 身之旋轉所產生之承載效應而難以經由粒子傳導至基板， 妨礙研磨逮度之上升。與此相對，於含有第】氧化石夕微粒 子與第2氧化石夕微粒子之情形時，藉由以氧化石夕微粒子抑 制第2氧化石夕微粒子之承載效應，而可效率良好地將高塵 區域中所賦予之荷重之能量傳導至基板。gp，^氧化石夕 微粒子具有自低壓至高壓維持研磨劑組成固有之普勒斯頓 係數之效果，作為研磨速度之普勒斯頓係數維持劑發揮功 能。 對本發月之研磨劑之施加熱時之研磨速度之上升幅度提 高效果進行說明。眾所周知於循環使用時，因研磨時所產 生之熱而使研磨劑、研磨定盤、研磨墊之溫度上升。又， 已知若對微粒子施加熱，則微粒子之運動能力提昇，且粒 子尺寸越小，該能力越大。又，已知粒子表面與基板表面 間之化學反應受到研磨環境強烈影響，尤其受到溫度強烈 影響，研磨時之溫度越上升，化學反應越活化。因此，於 將第1氧化矽微粒子之平均一次粒徑及第2氧化矽微粒子之 平均一次粒徑分別設為上述範圍，並以上述調配比例調配 之本發明之研磨劑之情形時，於施加熱時，由於粒子之運 動變得活躍，故而藉由接觸被研磨面之粒子數增加之效 果、與粒子表面與基板表面間之化學反應活化之效果，可 使研磨速度之上升幅度提高，第丨氧化矽微粒子作為熱響 應性提高劑發揮功能。 以下，對構成本發明之研磨劑之各要素進行說明。 163767.doc -10· 201241165 ⑴第1氧化石夕微粒子及第2氧化石夕微粒子 於本發明之研磨劑中，第！氧化石夕微粒子及第2氧化石夕微 粒子除平均一次粒徑不同以 J彳更用相冋之氧化矽微粒 ’且均可使用由各種公知 與.收 裡A夫之方法所製造者。例如可列 舉.將四氯化矽於氧與氫之火焰 y軋相合成而成之煙燻二201241165 VI. Description of the Invention: [Technical Field] The present invention relates to an abrasive and a polishing method for grinding a surface to be polished of an object to be polished. [Prior Art] As a substrate for LED (Light-Emitting Diode) or power device that is expected to be developed in the future, sapphire (α_Αΐ2〇3) or carbon carbide (SiC), gallium nitride (GaN) The manufacturing and processing technologies of compound single crystal wafers have attracted attention. It is important to form a crystal film such as GaN on these substrates. It is important to have a low-defect, high-quality surface in crystallography. In order to obtain such low-defect, high-smooth surfaces, chemical mechanical polishing (Chemical) Mechanical P〇iishing, which is sometimes referred to as (:]^^) technology, is concerned. However, sapphire, Sic, and GaN are both very hard and have high chemical stability, so they are especially in the final stage of determining quality. In the polishing, it is difficult to perform polishing with high efficiency while ensuring quality. There is a problem that the polishing step becomes extremely long. In the final polishing for determining the quality of the single crystal substrates, oxidized microparticles have been used so far. Attempts have been made to improve the polishing efficiency (polishing rate) by using the oxidized particles of the oxidized stone, and it is proposed to increase the amount of the abrasive particles and to mix the two or more kinds of abrasive grains having different particle diameters in a specific ratio (see Patent Document 1). Large grinding pressure/rotation speed, etc. ' With these methods, the above single crystal is the final stage of grinding, although a high quality The polishing efficiency is improved to the chemical mechanical polishing of the substrate, and in particular, the quality of the polished surface is maintained to a certain level, but it is still desired to open the 163767.doc 201241165 single crystal substrate for maintaining the south quality side more efficiently. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 It is an object of the invention to provide an abrasive and a polishing method which can polish a polished object while maintaining a high quality surface while maintaining a high quality. Technical Solution to Problem The present invention provides a core-to-grinding having the following constitution An abrasive for polishing the object to be polished. [1] An abrasive for polishing a surface to be polished of an object to be polished, which contains a third particle having an average primary particle diameter of 5 to 3 nm. a cerium oxide microparticle, a second cerium oxide microparticle having an average primary particle diameter of 40 to 125 nm, and water, and the first cerium oxide The ratio of the particles to the total amount of the second cerium oxide fine particles and the second cerium oxide fine particles is 〇7% by mass or more and less than 60% by mass. [2] The abrasive according to [1] above, wherein the above The average primary particle diameter of the cerium oxide microparticles is 45 to 110 nm. [3] The abrasive according to the above [1] or p], wherein the average primary particle diameter of the above-mentioned cerium oxide microparticles is 5 to 15 nm. [4] The abrasive according to any one of the above [1] to [3] wherein the third oxidized 163767.doc -4- 201241165 is a total of the first cerium oxide microparticles and the second cerium oxide microparticles. The ratio of the order is 1 to 55% by mass. [5] The grinding sword according to any one of [1] to [3], wherein the ratio of the first oxidized cerium particles to the total amount of the second cerium oxide microparticles and the second cerium oxide microparticles is 3 ~ 50% by mass. [6] The abrasive according to any one of the above [1] to [5] wherein the ratio of the total amount of the first cerium oxide microparticles to the second cerium oxide microparticles to the total mass of the abrasive is 〇·〇1~ 50% by mass. Further, the present invention provides a polishing method for polishing a surface to be polished of an object to be polished. [7] A polishing method in which an abrasive is supplied to a polishing crucible, and a surface to be polished of the object to be polished is brought into contact with the polishing pad, and the polishing is performed by relative movement between the two, and the π] is used as described above. [6] The abrasive according to any one of [6] as the above abrasive. [8] The polishing method according to [7], wherein the polishing crucible is a polishing comprising a base material layer and a surface layer, wherein the surface layer is disposed on a main surface of the base material layer, and the polishing object is provided The surface that is contacted by the polished surface has a plurality of fine holes that are opened in the surface and elongated in the thickness direction. m. The polishing method according to the above [8], wherein the surface layer of the polishing crucible has a Shore A hardness of 65 as measured according to JIS K 6253. [10] The polishing method according to [8] or [9] above, wherein the surface layer has fine pores having an average opening diameter of from 丨 to 65 μm. EFFECTS OF THE INVENTION According to the polishing agent of the present invention and the polishing method using the same, it is possible to polish the surface of the object to be polished to a high quality while maintaining the high quality of the object to be polished. 163767.doc 201241165 [Embodiment] Hereinafter, embodiments of the present invention will be described. [Abrasion Agent] The polishing agent of the present invention is used for polishing a surface to be polished of an object to be polished, and contains an i-th yttrium oxide fine particle having an average primary particle diameter of 5 to 3 Å, and an average primary particle diameter of 4 〇. The second cerium oxide fine particles of ～125 nm and water, and the ratio of the first cerium oxide fine particles to the total amount of the ith cerium oxide fine particles and the second cerium oxide fine particles is 〇7% by mass or more and less than 60% by mass. In the abrasive of the present invention, the first oxidized fine particles and the second oxidized fine particles are used as abrasive grains to form ruthenium. In the grinding of the invention, will be the first! The average primary particle diameter of the oxidized stone particles and the average primary particle diameter of the second oxidized particles of the second oxidized particles (4) are in the above range m (4) _ formulated in the polishing agent, thereby polishing the surface to be polished of the object to be polished, Two kinds of abrasive grains, such as Gu Xuan, interact in the direction of improving the abrasiveness to obtain a higher grinding speed. In addition to the effect of the abrasive grains, the abrasive grains as the first oxygen-cut microparticles of the present invention exhibit other effects by interaction with the second oxidized stone or the smectite. . In addition, the aggregation of the abrasive grains at the time of recycling is suppressed, the suppression of the change in the value of the abrasive during the recycling, and the collapse of the edge portion of the substrate (the surface collapse) of the object to be polished are suppressed and increased. = Dust 163767.doc 201241165 The increase in the grinding speed of the force is increased, and the increase in the grinding speed when the heat is applied is increased. The following details will be specifically described. The aggregation suppressing effect of the abrasive grains of the cycle of the invention (4) will be described. It is known that when the polishing agent containing only the second oxidized particles of the second oxidized particles is recycled, the second oxidized (tetra) particles are agglomerated by the action of the object to be pulverized. Will be the first! The average primary particle diameter of the oxygen-cut microparticles and the average-secondary particle diameter of the second oxygen-cut microparticles are each in the above range, and the abrasive of the present invention blended in the above-mentioned blending ratio is used by the oxygen in the soiling The cut microparticles are attached to the first cut microparticles, and the second oxidized oxide microparticles can be inhibited from agglomerating each other, first! The oxidized stone particles act as a coagulation inhibitor. The change of the positive value of the abrasive during the recycling of the abrasive of the present invention is described. It is known that only the second oxygen-cutting microparticles are contained in "4", because the object to be polished is "grinding," and the pH value of the grinding agent is changed by βs / and the flute... The average of the microparticles - the second particle control = 2 oxygen-cutting microparticles When the average-minor particle size is set to the above (4), and the ratio of the above-mentioned ratio is adjusted, the buffer of the stalk month is used, and the buffer generated by the large specific surface area of the recycled action is H/, and the variation of _ can be suppressed. The first oxidized particles of the first oxidized stone function as a pH change inhibitor. The effect of improving the smoothness of the object to be polished by the grinding agent is known as the abrasive grain and is contained in the π as the abrasive grain. The influence of the particle size of the particles is large. The larger the particle size = 'causing the damage such as the mark, the smoothness tends to deteriorate. When the particle size is 163767.doc 201241165, the smoothness is improved. Therefore, in the polishing agent containing only the second cerium oxide microparticles, the smoothness is deteriorated for the above reason, whereas the average granule diameter of the cerium oxide microparticles is equal to the average of the second cerium oxide microparticles. Particle size In the polishing agent of the present invention which is blended in the above-mentioned mixing ratio, since the specific surface area of the cerium oxide fine particles is large and the number of particles is large, the probability of contact with the surface to be polished is increased more uniformly. When the chance of contact with the surface to be polished is increased, the smoothness is improved, and the first oxidized particles of the first oxidized stone function as a smoothness improving agent. The sag suppressing effect of the edge portion of the substrate of the polishing material of the present invention is determined (hereinafter In some cases, the collapse of the surface of the substrate is known to be collapsed. The surface of the substrate is known to have a large influence on the particle size of the particles contained in the abrasive as the abrasive particles. The tendency to deteriorate 'has a tendency to be improved by reducing the particle size. Therefore, in the polishing agent containing only the second oxidized particles of the second oxidized stone, the surface collapse is deteriorated based on the above reason, and the oxidized microparticles are The average primary particle size and the average primary particle size of the Jingjingxi microparticles are respectively set to the above range, and are formulated in the above-mentioned blending ratio. In the non-monthly abrasive, since the surface area of the first cerium oxide particles is large and the number of particles is large, the probability of contact with the surface to be polished is increased, and the chance of more uniformly contacting the surface to be polished is increased, thereby being dispersed and applied thereto. The pressure at the edge of the substrate suppresses the collapse of the surface, and the oxidized fine particles act as a surface collapse inhibitor. The effect of maintaining the increase in the polishing rate at the time of increasing the polishing pressure of the polishing agent of the present invention will be described. According to the Preston equation, it is proportional to the processing pressure and the rotational speed (relative speed) during processing. The Preston coefficient is determined by the material and composition of the polishing pad or abrasive, and the material to be polished. Influence of wear characteristics, etc. M/t, pv (M: grinding amount, t: grinding time, η: Preston coefficient 'Ρ: processing pressure, ν: relative speed) Material of polishing pad, abrasive, When the objects to be polished are in common, it is known that the Preston coefficient is affected by the composition of the abrasive, and the state of the relative speed calculated from the rotational speed at the time of processing is further fixed. Next, the Preston coefficient inherent to the abrasive composition can be estimated from the change in the grinding speed with respect to the grinding pressure. Further, similarly, in the state of the fixed processing pressure, the Pryssen coefficient inherent to the abrasive composition can be estimated from the change in the polishing speed with respect to the relative speed. When the polishing agent containing only the second cerium oxide fine particles increases the polishing pressure and fixes the object to be polished while maintaining the relative speed, the polishing rate increases proportionally in the low pressure region, but the polishing is further increased in the step of increasing the polishing. When the grinding is performed in the high pressure region of the pressure, the increase in the grinding speed is remarkably lowered. That is, 'meaning that the inherent Preston coefficient of the abrasive composition is significantly smaller in the high pressure region' means that the Preston coefficient cannot be maintained from low pressure to high pressure. On the other hand, in the abrasive of the present invention in which the average primary particle diameter of the first cerium oxide microparticles and the average primary particle diameter of the second cerium oxide microparticles are each in the above range, and the blending ratio is adjusted, When the abrasive is ground by a large abrasive force, the increase in the polishing speed can be maintained from the low pressure to the high pressure region. That is, it means that the F.S. coefficient can be maintained from low pressure to high pressure. Although the reason has not been determined, in the case where only the second oxidized stone 163767.doc 201241165 particles are contained, the energy of the load imparted in the high-pressure region is difficult to be transmitted through the particles due to the load-bearing effect generated by the rotation of the particles themselves. The substrate hinders the rise of the grinding arrest. On the other hand, in the case of containing the first oxidized stone particles and the second oxidized particles, the high-dust region can be efficiently efficiently suppressed by the effect of the oxidized stone particles on the second oxidized particles. The energy imparted by the load is conducted to the substrate. Gp, ^Oxide Xiqi Microparticles have the effect of maintaining the inherent Preston coefficient of the abrasive composition from low pressure to high pressure, and function as a Preston coefficient maintenance agent for the polishing rate. The effect of increasing the polishing rate at the time of applying heat to the abrasive of the present month will be described. It is known that the temperature of the polishing agent, the polishing platen, and the polishing pad rises due to the heat generated during polishing during recycling. Further, it is known that if heat is applied to the fine particles, the moving ability of the fine particles is enhanced, and the smaller the particle size, the greater the ability. Further, it is known that the chemical reaction between the surface of the particle and the surface of the substrate is strongly influenced by the polishing environment, particularly by the temperature, and the temperature rises during polishing, and the chemical reaction is more activated. Therefore, when the average primary particle diameter of the first cerium oxide microparticles and the average primary particle diameter of the second cerium oxide microparticles are each in the above range, and the abrasive of the present invention is blended at the above-mentioned blending ratio, heat is applied. In this case, since the movement of the particles becomes active, the effect of increasing the number of particles contacting the surface to be polished and the effect of chemical reaction between the surface of the particles and the surface of the substrate can increase the increase in the polishing rate, and the third oxidation can be achieved. The bismuth microparticles function as a thermal responsiveness enhancer. Hereinafter, each element constituting the abrasive of the present invention will be described. 163767.doc -10· 201241165 (1) The first oxidized oxide particles and the second oxidized particles are in the abrasive of the present invention, the first! The oxidized oxidized particles and the second oxidized particles of the second oxidized stone are used in addition to the average primary particle diameter, and the cerium oxide particles are used in the same manner as those of the known method. For example, it can be listed as a smoked two of strontium tetrachloride in a flame of oxygen and hydrogen.

Si氧;:輪納進行離子交換或中和後除鹽而成之 =氧切，或者於液相中水解錢氧化物而成 ;^石夕等氧化石夕微粒子。該等中，於本發明之研磨劑 中，就品種之多樣性之觀點而言， 原料之膠體二氧化石夕。 t佳為以石夕㈣為起始 ，…本發明之研磨劑所含有之第1氧切微粒子之平均一次 拉控如+上所述為5〜3〇 nm，較佳為5〜15⑽，更佳為⑷ nm。右第1氧化矽微粒子 e ” -人粒徑未達5 nm，則不 度/’又，若超過3〇咖’則無法獲得所期待之研磨速 本發明之研磨劑所含有之第2氧切微粒子之平均 二拉控如上所述為則25nm ’較佳為糾❶⑽。若第 期Γ之子之平均—絲徑未達4Gnm，❹法獲得所 广寺之^速度’X’若超過I25nm，則雖可獲得研磨速 :-存在藍寶石表面變得粗糙而導致作為製品存在問題 之虞。 再者’於本說明書中’所謂氧化石夕微粒子之平均一次粒 :係將藉由氮吸附贿(Brunauer_E_ett TeUer，布厄特） 法所測定之比表面積換算成球狀粒子之直徑所得者。 163767.doc 201241165 進而，本發明之研磨劑中之上述第】氧化矽微粒子與第2 氧化矽微粒子之調配比例如上所述為如下調配比例，即， 第1氧化矽微粒子於第！氧化矽微粒子與第2氧化矽微粒子 之合計量中所占之比例為〇.7質量％以上且未達6〇質量％， 該調配比例較佳為丨〜55質量％，更佳為3〜5〇質量於該 比例未達0.7質量％時無法獲得所期待之研磨速度，於㈣ 量％以上時凝膠化受到促進，壽命變短。 本發明之研磨劑中之第1氧切微粒子及第2氧切微粒 子之含量較佳為考慮研磨速度' 均句性、材料選擇性、分 散穩定性等而於成為如下含量之範圍内適當設定，即，第 1氧化石夕微粒子與第2氧化石夕微粒子之合計量相對於研磨劑 總質量為5〇質量％以下。本發明之研磨劑中之第i及第焯 化石夕微粒子之合計含量更佳為2”量％以下，進而較佳為 15質量％以下。若第i及第2氧切微粒子之合計含量相對 於研磨劑總質量超過5〇質量％，則未確認到與研磨粒濃度 之增加相應之研磨速度之提高，χ，存在研磨劑之黏性過 度上升或促進研磨劑之凝膠化等情形。 再者’關於研磨劑中之第1氧化石夕微粒子及第2氧化石夕微 粒子之合計含量之下限’若考慮研磨速度、均勾性、材料 選擇性、分散敎性等，則較佳為相對於研磨劑總質量設 為〇.〇lf4%。於第1及第2氧切微粒子之合計含量相對 總質量未軌_量％時，^無法 研磨速度。 進而 就研磨速度與經濟性 之觀點而言，本發明之研磨 163767.doc 12 201241165 劑中之第1及第2氧化石夕微粒子之合計含量尤佳為相對於研 磨劑總質量為1〜10質量％之範圍。 (2)水 本發明之研磨劑含有水作為用以分散作為研磨粒之上述 第1及第2氧化矽微粒子，並且分散、溶解其他視需要添加 之任意成分之介質。本發明之研磨劑中之上述介質較佳為 僅由水構成，視需要亦可一併含有水及具有與水之相溶性 之有機溶劑》作為此種有機溶劑，具體而言可列舉：乙醇 等醇類、丙酮等酮類、及醚類，關於水並無特別限制，就 對其他調配成分之影響 '雜質之混入、對pH值等之影響方 面而言’較佳為純水或去離子水。 於本發明之研磨劑中，作為介質之水具有控制研磨劑之 流動性之功能，因此其含量可配合研磨速度、平坦化特性 等目標研磨特性而適當収。於本發明之研磨射，較佳 為以相對於研磨劑總質量為50〜99.99質量％之範圍含有 水。於水之含量相對於研磨劑總質量未達5〇質量％時，存 ::磨劑之黏性變高而損害流動性之情形，若超過99.99 貝里％ ’則存在作為研磨粒之上述第i及第2氧切微粒子 之濃度變低而無法獲得充分之研磨速度之情形。 再者’於本發明之研磨射介質除水料亦含有有機溶 d等之凊形時’將上述水之含量作為介質整體之含量 理。 % (3)研磨劑之製備及任意成分 本發明之研磨劑可藉由以成為例如上述調配量之方式祥 163767.doc •13- 201241165 量作為必需成分而含有之上述（1)之第1氧化矽微粒子及第2 氧化矽微粒子與（2)之水並進行混合而製備。 此處於均使用膠體一氧化石夕作為上述第1及第2氧化石夕 微粒子之情形時，膠體二氧化矽係以預先使氧化矽微粒子 分散於水中之狀態予以供給。因此，僅藉由以所期望之比 例混合含有上述第〗氧化矽微粒子之膠體二氧化矽、與含 有上述第2氧化矽微粒子之膠體二氧化矽，並適當以水稀 釋’便可製備本發明之研磨劑。 又，本發明之研磨劑亦可利用水稀釋含有上述第丨氧化 石夕微粒子之膠體二氧化石夕、與含有上述第2氧化石夕微粒子 之膠體二氧化石夕，並於研磨裝置之研磨劑箱内以成為上述 調配量之方式混合經稀釋之含有第❻化石夕微粒子之膠體 二氧化石夕 '與經稀釋之含有第2氧化石夕微粒+之膠體二氧 化夕或者，可分別於不同之箱内準備經稀釋之含有第1 氧化石夕微粒子之膠體二氧化石夕與經稀釋之含有第2氧化矽 微粒子之膠體二氧化石夕’於自各箱向研磨裝置供給研磨劑 之配管内以成為上述調配量之方式進行混合，或者亦可使 用不同之配管將該等自各箱供給至研磨墊上，於研磨塾上 :者’本發明之研磨劑中，除上述⑴、⑺之必需成分 以外亦可於無損上述本發明 赞a之效果之範圍内含有1種或複 :種：通常之化學機械研磨用之研磨劑所含有之任意成 2作為任意成分’例如可列舉：研磨劑之PH值調整劑、 緩衝劑、螯合劑、潤滑劑、 π深祖千之分散劑、殺生物劑 163767.doc 201241165 等。 作為pH值調整劑、缓衝劑而調配之任意成分中，作為 酸，可使用：硝酸、硫酸、磷酸、鹽酸之類的無機酸，甲 酸、乙酸、丙酸、丁酸等飽和羧酸，乳酸、蘋果酸、檸樣 酸尊經酸’鄰本二甲酸、水楊酸等芳香族缓酸，乙二酸、 丙一酸、丁·一酸、戍二酸、己·一酸、反丁稀二酸、順丁稀 二酸等二羧酸，甘胺酸、丙胺酸等胺基酸，雜環系之幾酸 之類的有機酸。作為鹼性化合物，可使用：氨，氫氧化 鋰、氫氧化鉀、氫氧化鈉，四曱基銨等四級敍化合物，甲 基胺、二甲基胺、三甲基胺、乙基胺、二乙基胺、三乙基 胺、正丙基胺、二-正丙基胺、三-正丙基胺、異丙基胺、 正丁基胺、異丁基胺、第二丁基胺、第三丁基胺、戊醯基 胺、異戊醯基胺、環己基胺、苄基胺、α-苯基乙基胺、β_ 苯基乙基胺、乙二胺、丙二胺、丁二胺、戊二胺、己二 胺、氫氧化丁二胺、苯胺、甲基苯胺、二曱基苯胺、鄰曱 苯胺、間曱笨胺、對甲苯胺、鄰甲氧苯胺、間曱氧苯胺、 對曱氧苯胺、間氯苯胺、對氣苯胺、鄰硝基苯胺、間硝基 苯胺、對硝基苯胺、2,4-二硝基苯胺、2,4,6-三硝基苯胺、 鄰苯二胺、間苯二胺、對苯二胺、聯苯胺、對胺基苯磺 酸、乙脒、2-苯胺基乙醇、苯胺基苯酴、胺基乙醯苯胺、 胺基苯乙酮、2-胺基乙醇、2-胺基乙硫醇、2_胺基-2-乙 基-1，3-丙二醇、胺基胍、5-胺基鄰曱酚、6-胺基間甲酚、 3- 胺基丁烯酸乙酯、對胺基苯乙烯、4-胺基-1，2,4-三唑、 4- 胺基-1-萘盼、5-胺基-2-萘紛、8-胺基-2_萘齡、8-胺基 163767.doc •15· 201241165 -1-萘酚、胺基苯酚、2-胺基-1· 丁醇、2-胺基-1-丙醇、α_ 胺基丙腈、對胺基苄醇、對胺基苯曱醛、2_胺基_2_甲基 -1-丙醇、2-胺基-2-甲基_1，3_丙二醇、4-胺基-4-曱基_2-戊 酮、尿囊素、稀丙胺、檳榔次驗、檳榔驗、對異丙基笨 胺、2-(乙基胺基）乙醇、Ν-乙基-1-蔡胺、Ν-乙基-2-蔡胺、 〇-乙基羥基胺、Ν-乙基苯曱醯胺、麻黃鹼、草醯胺酸、二 甲苯胺、對二甲苯-α，α’-二胺、嗝啶、Ν6-呋喃f基腺嘴 呤、喹噚啉、2-喹啉基胺、4·喹啉基胺、胍基乙酸' 3,6_ 二氮雜辛烧-1，8-二胺、4,4'-二苯基胺、2,4-二胺基苯齡、 3’4 -—胺基本齡、一'異丙基胺、二乙醇胺、2-(二乙基胺 基）乙醇、.一乙基氛酿胺、一伸乙基三胺、環丙基胺、環 己二胺、N，N，-二苯基乙二胺、N，N，-二苯基胍、4,4，_二苯 基曱二胺、2-二甲基胺基乙醇、Ν，Ν·二甲基_2-萘胺、3,5-二甲基吡唑、二曱基吡啶、Ν，Ν-二曱基對苯二胺、2_0塞。坐 胺、2-異丙-5-甲笨胺、胸腺嘧啶、十氫化喹啉、四乙基 銨、1，2,3,4-四氫-1-萘胺、1，2,3,4-四氫萘胺、Ν，Ν，Ν，，Ν，·四 曱基乙二胺、Ν，Ν，Ν’，Ν·-四曱基對苯二胺、丨，4_丁二胺、 2，4,6-三胺基苯盼、二乙醇胺、氧化三曱胺、2 3-曱苯二 胺、2,4-曱本二胺、2,6-甲本二胺、3，5 -甲苯二胺、ι，2_萘 一胺、1，4-萘二胺、1，8-萘二胺、2,6-萘二胺、2,7-萘二 胺、4,4'-雙（二曱基胺基）一苯基胺、雙（二甲基胺基）曱 烧、組胺、Ν，Ν-雙（2-經基乙基）丁基胺、乙稀基胺、4_聯 苯基胺、哌畊、2,5-哌畊二_、2·哌啶酮、哌唆、2_吡咬 基胺、3-吡啶基胺、4-°比啶基胺、吡啶、嘧啶、吡洛咬、 163767.doc •16- 201241165 吡咯啉、苯甲醯甲基胺、N_苯基羥基胺、丨_苯基·2_丙胺、 鄰苯二胺、間苯二胺、對苯二胺、苯乙基胺、丨，4_ 丁二 胺、1，2-丙二胺、ι，3_丙二胺、六亞甲基四胺、丨，6•己二 胺、Ν-节基羥基胺、〇_苄基羥基胺、二苯甲基胺、丨，2,3一 苯二胺、1，2,4-苯三胺、i，5_戊二胺、第三戊基胺、甲基 脈、N-曱基經基胺、曱基羥基胺、2_甲基哌啶、3_甲基 哌啶、4-曱基哌啶' 曱基哌啶、2-曱基吡啶、3-甲基吡 啶、4-甲基吡啶、N_甲基_p_笨二胺、4曱氧基吡啶、弘胺 基-3-脫氧-D-葡萄糖、半乳胺糖、葡萄糖胺、岩藻糖胺' 甘露糖胺'N-甲基葡萄糖胺、胞壁酸等有機胺。又，亦可 為上述化合物之1個或2個以上之質子經ρ、ci、Br、I、 OH、CN、N〇2等原子或原子團取代而成之衍生物。 作為螯合劑，可列舉：甘胺酸、丙胺酸等胺基酸，聚胺 基羧酸系螯合化合物或有機膦酸系螯合化合物。具體而 a，可列舉：乙二胺四乙酸、氮基三乙酸，二伸乙基三胺 五乙自文、羥基乙基乙二胺三乙酸、三伸乙基四胺六乙酸' 1,3_丙二胺四乙酸、丨·羥基乙烷二膦酸、氮基三（亞曱 土膦§文）一伸乙基二胺五亞曱基膦酸、膦醯基丁烧三甲 酸、膦醯基羥基乙酸、羥基乙基二亞甲基膦酸、胺基三亞 甲基膦酸、乙二胺四亞曱基膦酸、己二胺四亞曱基膦酸、 植酸等。 作為上述潤滑劑及研磨粒子之分散劑，可使用陰離子 性、陽離子性、非離子性或兩性之界面活性劑，多糖類， 水溶性高分子等。 163767.doc 201241165 作為界面活性劑，可使用如下化合物：具有脂肪族烴 基 '芳香族烴基作為疏水基，具有於該疏水基内導入1個 以上之醋基、醚基、醯胺基等配位基，醯基、烷氧基等連 結基而成之基，且具有自羧酸、磺酸、硫酸酯、磷酸、磷 酸醋、胺基酸衍生出之基作為親水基。 作為多糖類，可使用海藻酸、果膠、羧曱基纖維素、卡 德蘭多糖、支鏈澱粉、三仙膠、角叉菜膠、結冷膠、刺槐 豆膠、阿拉伯膠、羅望子、洋車前子等。 作為水溶性高分子，可使用聚丙烯酸、聚乙烯醇、聚乙 烯基吡咯啶酮、聚甲基丙烯酸、聚丙烯醯胺、聚天冬醯胺 酸、聚縠胺酸、聚伸乙基亞胺、聚烯丙基胺、聚苯乙烯磺 酸等。 進而’本發明之研磨劑亦可於無損上述本發明之效果之 範圍内且於下述條件下含有除下述第i及第2氧化矽微粒子 以外之平均一次粒徑為任意之氧化矽微粒子，上述條件係 維持關於第1氧化矽微粒子與第2氧化矽微粒子於研磨劑中 之調配比例的上述本發明之關係，且所有氧化矽微粒子之 合计含里處於上述所說明之研磨劑中之第丨及第2氧化矽微 粒子之合計含量之範圍内。 (4)研磨對象物 本發明之研磨劑為用以對研磨對象物之被研磨面進行研 磨者’作為研磨對象物並無特別限制。具體而言，可列 舉：玻璃基板、碎晶圓、半導體裝置配線基板、化合物單 晶基板等。該等中，本發明之研磨劑於研磨化合物單晶基 163767.doc -18- 201241165 板時可更大幅地提昇效果’尤其藉由將其用於基於修正莫 氏硬度之硬度為10以上之單晶基板，可進一步期待一面維 持高品質一面實現更高水準之高速研磨之效果。 作為上述修正莫氏硬度為10以上之單晶基板，具體而 言，可列舉：藍寶石（α-A丨203)基板（硬度：12)、碳化矽 (SiC)基板（硬度：π)、氮化鎵（GaN)基板（硬度：13)等。該 等中，本發明之研磨劑可尤佳地用於藍寶石基板之研磨。 [研磨方法] 作為使用本發明之研磨劑對研磨對象物之被研磨面進行 研磨的方法，較佳為如下研磨方法：一面將研磨劑供給至 研磨墊，一面使研磨對象物之被研磨面與研磨墊接觸，藉 由兩者間之相對運動進行研磨。 於上述研磨方法中，作為研磨裝置可使用先前公知之研 磨裝置。圖1表示本發明之實施形態中可使用之研磨裝置 之一例，以下進行說明，但本發明之實施形態中所使用之 研磨裝置並不限定此種構造者。 '亥研磨裝置10具備：保持研磨對象物i之研磨頭2、研磨 定盤3、貼附於研磨定盤3之表面之研磨墊4、及對研磨墊4 供給研磨劑5之研磨劑供給配管6。研磨裝置1〇構成為一面 自研磨劑供給配管6供給研磨劑5，一面使由研磨頭2所保 持之研磨對象物〗之被研磨面接觸研磨墊4，使研磨頭2與 研磨定盤3相對地進行旋轉運動而進行研磨。 於本發明中，例如可使用此種研磨裝置10進行研磨對象 物1之被研磨面之研磨。此處，研磨裝置1〇為將研磨對象 163767.doc •19- 201241165 物之單面作為被研磨面進行研磨之研磨裝置，但例如亦可 使用於研磨對象物之上下面配置有與研磨裝置1〇相同之研 磨墊之兩面同時研磨裝置進行研磨對象物之被研磨面（兩 面）之研磨。 又’亦可回收自研磨定盤3與貼附於研磨定盤3之表面之 研磨墊4藉由旋轉運動而向外排出之研磨劑，將其再次自 研磨劑供給配管6供給至研磨墊4而使用。 研磨頭2不僅可進行旋轉運動亦可進行直線運動。又， 研磨定盤3及研磨墊4之大小可與研磨對象物丨為相同程度 或為其以下《於該情形時，較佳為可藉由使研磨頭2與研 磨定盤3相對地移動而對研磨對象物丨之整個被研磨面進行 研磨。進而，研磨定盤3及研磨墊4亦可不進行旋轉運動， 例如亦可帶式地沿一方向移動。 又’根據需要’亦可使研磨墊調節器接觸研磨墊4之表 面，一面調節研磨墊4之表面一面進行研磨。 作為研磨墊4，可使用包含通常之不織布、發泡聚胺基 曱酸酯、多孔質樹脂、非多孔質樹脂等者。又，為促進研 磨劑5向研磨墊4之供給、或使一定量之研磨劑5積存於研 磨墊4上，可對研磨墊4之表面實施格子狀、同心圓狀、螺 紅狀專之溝槽加工。 此處’於本發明之研磨方法中’作為上述研磨墊4，可 較佳地使用如下積層構造之研磨墊，該研磨墊包含基材層 與表面層，該表面層（以下稱作「多孔質表面層」）配設於 »亥基材層之主面上’具備與研磨對象物之被研磨面接觸之 I63767.doc •20· 201241165 表面，且具有於該表面開孔並沿 ., _ , . ^ 早度方向伸長之多個微細 孔。此種包含多孔質表面層之藉 ^ Μ ώ ^ , 9構坆之研磨墊通常被稱 作麂皮型研磨墊，該研磨墊眾所用 承所周知為用於半導體之尤其 疋精研磨。 進而，於本發明中，作為上述包 夕孔質表面層之積層 …磨墊，較佳為使用多孔質表面層之依據JIS κ 6:53_1997所測定之蕭氏A硬度(以下簡稱作「蕭氏八硬 ^ )為65以下之研磨墊’多孔質表面層之蕭氏a硬度更佳 為60以下’進而較佳為5〇以下。若上述研磨墊之多孔質表 面層之蕭氏A硬度超過65’則存在無法獲得所期待之研磨 速度之虞。又’作為研磨塾之多孔質表面層之蕭氏A硬度 之下限值，可列舉！作為較佳值。以目前之技術難以製造 蕭氏A硬度低於1之研磨墊。 又，於本發明中，作為上述包含多孔質表面層之積層構 造之研磨墊’較佳為使用多孔質表面層所具有之微細孔之 平均開孔徑為65 μπι以下之研磨墊，多孔質表面層所具有 之微細孔之平均開孔徑更佳為55 μηι以下’進而較佳為45 μηι以下，尤佳為4〇 μηι以下。若上述研磨塾之多孔質表面 層所具有之微細孔之平均開孔徑超過6 5 μη，則存在無法 獲得所期待之研磨速度之虞。又，作為研磨墊之多孔質表 面層所具有之微細孔之平均開孔徑之下限值，可列舉丨 作為較佳值。以目前之技術難以製造平均開孔徑低於】 之研磨墊。再者，於本說明書中，所謂平均開孔徑係指拍 攝多孔質表面層之與研磨對象物之被研磨面接觸之表面， 163767.doc -21 - 201241165 而獲得之一定測定面積 自所得之顯微鏡相片藉由圖像解析 内所存在之開孔之直經之平均值。 又’上述包含多孔質表面層之積層 谓瓚構造之研磨墊中之多 孔質表面層只要為具有上述特性者 #丨嘗則其厚度並無特別限 制》可根㈣使用之研磨劑之種類或研磨條件等而適當調 整》再者’多孔質表面層所具有之微細孔較佳為以沿多孔 質表面層之厚度方向伸長且其長声望於夕# 丹仗度寺於多孔質表面層之厚 度’即貫通多孔質表面層者為主體。 作為上述本發明中可較佳地使用u含多孔質表面層之 積層構造之研磨墊之基材層，並無特別限制可適當使用 普通麂皮型研磨墊通常所包含之基材層。具體而言，可列 舉：填充有聚胺基曱酸酯樹脂之聚酯等不織布發泡聚胺 基f酸醋片材、聚對苯二甲酸乙二醋（PET，p〇lyethyleneSi oxygen;: ion exchange or ionization after neutralization = oxygen cut, or hydrolysis of money oxides in the liquid phase; ^ Shi Xi and other oxidized stone particles. Among these, in the abrasive of the present invention, the colloidal silica stone of the raw material is used in view of the variety of the variety. t is preferably starting from Shi Xi (four), and the average primary pulling control of the first oxygen-cutting microparticles contained in the abrasive of the present invention is 5 to 3 〇 nm, preferably 5 to 15 (10), as described above. Good for (4) nm. The right first cerium oxide microparticle e ′ - the human particle size is less than 5 nm, the degree is less than '', and if it exceeds 3 〇 coffee', the desired polishing rate cannot be obtained. The second oxygen cut of the abrasive of the present invention is not obtained. The average two pull control of the microparticles is as described above, then 25 nm' is preferably entangled (10). If the average of the first Γ — — — — — — — — 丝 丝 丝 丝 ❹ ❹ ❹ ❹ ❹ 速度 速度 所 速度 所 所 所 所 所 所 所 所 所 速度 速度 速度Although the grinding speed can be obtained: - the surface of the sapphire becomes rough and causes problems as a product. Further, in the present specification, the average primary particle of the so-called oxidized stone particles is to absorb bribes by nitrogen (Brunauer_E_ett TeUer) The ratio of the specific surface area measured by the method of the Buchholt method to the diameter of the spherical particles is 163767.doc 201241165 Further, in the abrasive of the present invention, the ratio of the above-mentioned cerium oxide microparticles to the second cerium oxide microparticles is as above The ratio of the first cerium oxide microparticles to the total amount of the cerium oxide microparticles and the second cerium oxide microparticles is 〇.7% by mass or more and less than 6% by mass. Provisioning The ratio is preferably 丨5% to 55% by mass, more preferably 3 to 5% by mass. When the ratio is less than 0.7% by mass, the desired polishing rate cannot be obtained. When the amount is (%) or more, the gelation is promoted and the life is shortened. The content of the first oxygen-cut microparticles and the second oxygen-cut microparticles in the polishing agent of the present invention is preferably set within the range of the following contents in consideration of the polishing rate, the uniformity, the material selectivity, the dispersion stability, and the like. That is, the total amount of the first oxidized particles and the second oxidized particles is 5% by mass or less based on the total mass of the polishing agent. The total content of the i-th and the third fossil granules in the abrasive of the present invention More preferably, it is 2"% or less, and further preferably 15% by mass or less. When the total content of the i-th and second oxygen-cut microparticles exceeds 5% by mass based on the total mass of the polishing agent, an increase in the polishing rate corresponding to an increase in the polishing particle concentration is not confirmed, and the viscosity of the abrasive excessively rises. Or promote the gelation of the abrasive and the like. Further, the "lower limit of the total content of the first oxidized fine particles and the second oxidized fine particles in the polishing agent" is preferably relative to the polishing rate, the uniformity, the material selectivity, the dispersibility, and the like. The total mass of the abrasive was set to 〇.〇lf 4%. When the total content of the first and second oxygen-cut microparticles is less than or equal to the total mass, the polishing rate cannot be obtained. Further, in terms of polishing speed and economy, the total content of the first and second oxidized oxide particles in the polishing 163767.doc 12 201241165 agent of the present invention is particularly preferably 1 to 10 by mass based on the total mass of the abrasive. The range of %. (2) Water The abrasive of the present invention contains water as a medium for dispersing the above-mentioned first and second cerium oxide fine particles as abrasive grains, and dispersing and dissolving other optional components added as needed. In the polishing agent of the present invention, the medium is preferably composed of only water, and may contain water and an organic solvent having compatibility with water as an organic solvent, and specific examples thereof include ethanol. The ketones such as alcohols and acetone, and the ethers are not particularly limited, and the influence on other blending components is preferably 'pure water or deionized water' in terms of the influence of impurities, pH, and the like. . In the abrasive of the present invention, since the water as the medium has a function of controlling the fluidity of the abrasive, the content thereof can be appropriately set in accordance with the target polishing characteristics such as the polishing rate and the flattening property. The polishing shot of the present invention preferably contains water in a range of 50 to 99.99% by mass based on the total mass of the abrasive. When the content of water is less than 5% by mass relative to the total mass of the abrasive, the viscosity of the abrasive is high and the fluidity is impaired. If it exceeds 99.99%, the above-mentioned first is used as the abrasive grain. The concentration of i and the second oxygen-cut microparticles is low, and a sufficient polishing rate cannot be obtained. Further, when the water-repellent material of the polishing medium of the present invention also contains an organic solvent, the content of the water is used as the content of the entire medium. (3) Preparation of the abrasive and optional components The abrasive of the present invention can be contained in the first oxidation of the above (1) by using, for example, the above-mentioned amount of 163767.doc •13-201241165 as an essential component. The bismuth microparticles and the second cerium oxide microparticles are prepared by mixing and mixing the water of (2). In the case where the colloidal silica is used as the first and second oxidized oxide particles, the colloidal cerium oxide is supplied in a state in which the cerium oxide fine particles are dispersed in water in advance. Therefore, the present invention can be prepared only by mixing the colloidal ceria containing the above-mentioned cerium oxide fine particles and the colloidal ceria containing the above second cerium oxide fine particles in a desired ratio, and appropriately diluting with water. Abrasive. Moreover, the abrasive of the present invention may also dilute the colloidal silica dioxide containing the above-mentioned cerium oxide cerium microparticles with water and the colloidal silica dioxide containing the second oxidized oxidized fine particles, and the abrasive in the polishing apparatus. Mixing the diluted colloidal silica dioxide containing the cerium fossil granules with the diluted colloidal cerium dioxide containing the second oxidized granules + in the manner of the above-mentioned blending amount, respectively, may be different The diluted colloidal silica dioxide containing the first oxidized fine particles and the diluted colloidal silica dioxide containing the second cerium oxide fine particles are prepared in the tank to be supplied into the piping for supplying the polishing agent from the respective boxes to the polishing apparatus. The above-mentioned blending amount may be mixed or may be supplied to the polishing pad by using different pipes, and the abrasive of the present invention may be in addition to the essential components of the above (1) and (7). In the range which does not impair the effect of the above-mentioned invention, one type or a plurality of types: an ordinary abrasive for chemical mechanical polishing contains any one of 2 Ingredients' example include: abrasives of PH value adjusting agent, buffering agents, chelating agents, lubricants, [pi] one thousand deep progenitor of dispersants, biocides and the like 163767.doc 201241165. As an acid, an inorganic acid such as nitric acid, sulfuric acid, phosphoric acid or hydrochloric acid, a saturated carboxylic acid such as formic acid, acetic acid, propionic acid or butyric acid, or lactic acid may be used as the acid in any of the components to be adjusted as a pH adjuster or a buffer. , malic acid, lemon-like acid, acid, o-dicarboxylic acid, salicylic acid and other aromatic acid, oxalic acid, propionic acid, butyl acid, azelaic acid, hexanic acid, anti-butadiene A dicarboxylic acid such as a diacid or a cis-butyl diacid, an amino acid such as glycine or alanine, or an organic acid such as a heterocyclic acid. As the basic compound, a four-stage compound such as ammonia, lithium hydroxide, potassium hydroxide, sodium hydroxide or tetradecyl ammonium, methylamine, dimethylamine, trimethylamine or ethylamine can be used. Diethylamine, triethylamine, n-propylamine, di-n-propylamine, tri-n-propylamine, isopropylamine, n-butylamine, isobutylamine, second butylamine, Tert-butylamine, amylamine, isoamylamine, cyclohexylamine, benzylamine, α-phenylethylamine, β-phenylethylamine, ethylenediamine, propylenediamine, dibutyl Amine, pentamethylenediamine, hexamethylenediamine, butylenediamine hydroxide, aniline, methylaniline, dinonylaniline, o-anisidine, m-anthraceneamine, p-toluidine, o-methoxyaniline, meta-oxoaniline, P-oxanilide, m-chloroaniline, p-aniline, o-nitroaniline, m-nitroaniline, p-nitroaniline, 2,4-dinitroaniline, 2,4,6-trinitroaniline, o-benzene Diamine, m-phenylenediamine, p-phenylenediamine, benzidine, p-aminobenzenesulfonic acid, ethyl hydrazine, 2-anilinoethanol, anilinoquinone, aminoacetanilide, aminoacetophenone, 2 -Aminoethanol, 2-amino B Mercaptan, 2-amino-2-ethyl-1,3-propanediol, aminoguanidine, 5-aminoo-nonylphenol, 6-amino m-cresol, ethyl 3-aminobutenoate, Aminostyrene, 4-amino-1,2,4-triazole, 4-amino-1-naphthalene, 5-amino-2-naphthyl, 8-amino-2-naphthyl, 8 -Amino 163767.doc •15· 201241165 -1-Naphthol, Aminophenol, 2-Amino-1, Butanol, 2-Amino-1-propanol, α-Aminopropionitrile, p-Aminobenzyl Alcohol, p-aminobenzaldehyde, 2-amino-2-tom-1-propanol, 2-amino-2-methyl-1,3-propanediol, 4-amino-4-indenyl 2-pentanone, allantoin, dilute propylamine, betel nut test, betel nut test, p-isopropyl strepamine, 2-(ethylamino)ethanol, hydrazine-ethyl-1-cetamine, hydrazine-ethyl -2-Cetamine, 〇-ethylhydroxylamine, Ν-ethylbenzamine, ephedrine, lysine, xylylamine, p-xylene-α,α'-diamine, acridine, Ν6-furan f-based adenine, quinoxaline, 2-quinolinylamine, 4·quinolinylamine, thioglycolic acid ' 3,6-diazaxin-1,8-diamine, 4,4 '-Diphenylamine, 2,4-diaminophene, 3'4-amine basic age, mono-isopropylamine, diethanolamine, 2-( Ethylamino)ethanol, monoethylamine, monoethylamine, cyclopropylamine, cyclohexanediamine, N,N,-diphenylethylenediamine, N,N,-diphenyl Base, 4,4,-diphenylstilbene diamine, 2-dimethylaminoethanol, hydrazine, hydrazine dimethyl 2-naphthylamine, 3,5-dimethylpyrazole, dimercapto Pyridine, hydrazine, hydrazine-dimercapto-p-phenylenediamine, 2_0 stopper. Oleamine, 2-isopropyl-5-methylamine, thymine, decahydroquinoline, tetraethylammonium, 1,2,3,4-tetrahydro-1-naphthylamine, 1,2,3,4 - tetrahydronaphthylamine, hydrazine, hydrazine, hydrazine, hydrazine, tetradecylethylenediamine, hydrazine, hydrazine, hydrazine, Ν-tetradecyl-p-phenylenediamine, anthracene, 4-butanediamine, 2 , 4,6-triaminophene, diethanolamine, tridecylamine, 2 3-nonylphenylenediamine, 2,4-guanidine diamine, 2,6-methyldiamine, 3,5-toluene Diamine, iota, 2-naphthylamine, 1,4-naphthalenediamine, 1,8-naphthalenediamine, 2,6-naphthalenediamine, 2,7-naphthalenediamine, 4,4'-bis ( Dimethylamino)monophenylamine, bis(dimethylamino)fluorene, histamine, hydrazine, hydrazine-bis(2-ylethylethyl)butylamine, ethyleneamine, 4_linked Phenylamine, piperene, 2,5-piperidin-2, 2 piperidinone, piperidine, 2_pyridylamine, 3-pyridylamine, 4-pyridylpyridylamine, pyridine, pyrimidine, Pilo, 163767.doc •16- 201241165 Pyrroline, benzamidine methylamine, N_phenylhydroxylamine, 丨_phenyl·2_propylamine, o-phenylenediamine, m-phenylenediamine, p-phenylene Amine, phenethylamine, hydrazine, 4_butylamine, 1,2-propylenediamine, ι,3-propylenediamine, Hexamethylenetetramine, anthracene, hexamethylenediamine, hydrazone-hydroxylamine, hydrazine-benzylhydroxylamine, benzhydrylamine, anthracene, 2,3-phenylenediamine, 1,2,4 - phenyltriamine, i,5-pentanediamine, third amylamine, methyl pulse, N-fluorenylamine, mercaptohydroxylamine, 2-methylpiperidine, 3-methylpiperidine, 4-mercaptopiperidine 'mercaptopiperidine, 2-mercaptopyridine, 3-methylpyridine, 4-methylpyridine, N-methyl-p-p-phenylene diamine, 4-decyloxypyridine, and amide Organic amines such as -3-deoxy-D-glucose, galactosamine, glucosamine, fucosylamine mannosamine 'N-methylglucamine, muramic acid. Further, a derivative in which one or two or more protons of the above compound are substituted with an atom or an atomic group such as ρ, ci, Br, I, OH, CN or N〇2 may be used. The chelating agent may, for example, be an amino acid such as glycine or alanine, a polyaminocarboxylic acid-based chelate compound or an organic phosphonic acid-based chelate compound. Specifically, a, for example, ethylenediaminetetraacetic acid, nitrogen triacetic acid, diethylidene triamine pentaethylene, hydroxyethylethylenediaminetriacetic acid, and tris-ethyltetraamine hexaacetate' 1,3 _Propandialdiaminetetraacetic acid, hydrazine hydroxy ethane diphosphonic acid, nitrogen tris(rhodophosphite) § Ethyldiamine pentadecylphosphonic acid, phosphinobutyryl tricarboxylic acid, phosphinium Glycolic acid, hydroxyethyl dimethylenephosphonic acid, aminotrimethylenephosphonic acid, ethylenediaminetetradecylphosphonic acid, hexamethylenediaminetetradecylphosphonic acid, phytic acid, and the like. As the dispersing agent for the lubricant and the polishing particles, an anionic, cationic, nonionic or amphoteric surfactant, a polysaccharide, a water-soluble polymer or the like can be used. 163767.doc 201241165 As a surfactant, a compound having an aliphatic hydrocarbon group 'aromatic hydrocarbon group' as a hydrophobic group and having one or more ligands such as an acetoxy group, an ether group or a guanamine group introduced into the hydrophobic group can be used. a group derived from a linking group such as a mercapto group or an alkoxy group, and having a group derived from a carboxylic acid, a sulfonic acid, a sulfate, a phosphoric acid, a phosphoric acid vinegar, or an amino acid as a hydrophilic group. As the polysaccharide, alginic acid, pectin, carboxymethyl cellulose, cadmium polysaccharide, amylopectin, celestial gum, carrageenan, gellan gum, locust bean gum, gum arabic, tamarind, The front of the car. As the water-soluble polymer, polyacrylic acid, polyvinyl alcohol, polyvinylpyrrolidone, polymethacrylic acid, polyacrylamide, polyaspartic acid, polylysine, polyethylenimine can be used. , polyallylamine, polystyrene sulfonic acid, and the like. Further, the polishing agent of the present invention may contain cerium oxide fine particles having an average primary particle diameter other than the following i-th and second cerium oxide microparticles, within the range which does not impair the effects of the present invention, under the following conditions. The above condition maintains the relationship of the present invention regarding the blending ratio of the first cerium oxide microparticles and the second cerium oxide microparticles in the abrasive, and the total of all the cerium oxide microparticles is in the third of the above-described abrasives. And the total content of the second cerium oxide microparticles. (4) Object to be polished The abrasive to be polished in the object to be polished is not particularly limited as the object to be polished. Specifically, a glass substrate, a broken wafer, a semiconductor device wiring substrate, a compound single crystal substrate, or the like can be cited. Among these, the abrasive of the present invention can greatly enhance the effect when the compound single crystal substrate 163767.doc -18-201241165 is ground, especially by using it for a hardness of 10 or more based on the modified Mohs hardness. The crystal substrate can be further expected to achieve a higher level of high-speed polishing while maintaining high quality. Specific examples of the single crystal substrate having a Mohs hardness of 10 or more are sapphire (α-A丨203) substrate (hardness: 12), tantalum carbide (SiC) substrate (hardness: π), and nitridation. Gallium (GaN) substrate (hardness: 13) and the like. Among these, the abrasive of the present invention can be preferably used for the polishing of a sapphire substrate. [Polishing method] As a method of polishing the surface to be polished of the object to be polished by using the polishing agent of the present invention, it is preferable to use a polishing method in which the polishing target is applied to the polishing pad while the polishing target is polished. The polishing pad is in contact and is ground by relative motion between the two. In the above polishing method, a conventionally known grinding device can be used as the polishing device. Fig. 1 shows an example of a polishing apparatus which can be used in the embodiment of the present invention, and will be described below. However, the polishing apparatus used in the embodiment of the present invention is not limited to such a structure. The 'black polishing apparatus 10 is provided with a polishing head 2 that holds the object to be polished i, a polishing platen 3, a polishing pad 4 attached to the surface of the polishing platen 3, and an abrasive supply pipe that supplies the polishing agent 5 to the polishing pad 4. 6. The polishing apparatus 1 is configured such that the polishing material 5 is supplied from the polishing agent supply pipe 6, and the polishing surface of the polishing object held by the polishing head 2 is brought into contact with the polishing pad 4, so that the polishing head 2 is opposed to the polishing platen 3. The ground is rotated to perform grinding. In the present invention, for example, the polishing apparatus 10 can be used to polish the surface to be polished of the object 1 to be polished. Here, the polishing apparatus 1 is a polishing apparatus that polishes a single surface of the object to be polished 163767.doc •19-201241165 as a surface to be polished, but may be used, for example, on the upper surface of the object to be polished and the polishing apparatus 1 The two polishing surfaces of the same polishing pad are simultaneously polished by the polishing apparatus to polish the polished surface (both sides) of the object to be polished. Further, it is also possible to collect the polishing agent which is discharged from the polishing pad 3 and the polishing pad 4 attached to the surface of the polishing platen 3 by the rotary motion, and supplies it again to the polishing pad 4 from the abrasive supply pipe 6. And use. The polishing head 2 can perform not only a rotary motion but also a linear motion. Further, the size of the polishing platen 3 and the polishing pad 4 may be the same as or lower than the object to be polished. In this case, it is preferable to move the polishing head 2 and the polishing platen 3 relatively. The entire surface to be polished of the object to be polished is ground. Further, the polishing platen 3 and the polishing pad 4 may not be rotated, and may be moved in a direction, for example, in a belt. Further, the polishing pad adjuster may be brought into contact with the surface of the polishing pad 4 as needed, and the surface of the polishing pad 4 may be adjusted while being polished. As the polishing pad 4, a general non-woven fabric, a foamed polyamino phthalate, a porous resin, a non-porous resin or the like can be used. Further, in order to promote the supply of the polishing agent 5 to the polishing pad 4 or to deposit a certain amount of the polishing agent 5 on the polishing pad 4, the surface of the polishing pad 4 may be lattice-shaped, concentric, or spiral-shaped. Groove processing. Here, in the polishing method of the present invention, as the polishing pad 4, a polishing pad having a laminated structure including a base material layer and a surface layer (hereinafter referred to as "porous") can be preferably used. The surface layer") is disposed on the main surface of the "Hay substrate layer" and has an I63767.doc •20·201241165 surface in contact with the surface to be polished of the object to be polished, and has an opening on the surface and along the ., _ , . ^ Multiple holes that are elongated in the early direction. Such a polishing pad comprising a porous surface layer is generally referred to as a suede type polishing pad, which is well known for use in semiconductors, especially for fine polishing. Further, in the present invention, as the laminate of the surface layer of the surface layer, it is preferable to use the Shore A hardness measured by JIS κ 6:53_1997 using a porous surface layer (hereinafter referred to as "Shore".八硬^) is a polishing pad of 65 or less. The hardness of the porous surface layer is preferably 60 or less, and more preferably 5 or less. If the porous surface layer of the polishing pad has a Shore A hardness of more than 65 'There is no such thing as the desired polishing rate. The lower limit of the Shore A hardness of the porous surface layer of the polishing crucible is as a preferred value. It is difficult to manufacture the Shaw A by the current technology. In the present invention, the polishing pad of the laminated structure including the porous surface layer is preferably an average opening diameter of the micropores of the porous surface layer of 65 μπι or less. In the polishing pad, the average pore diameter of the fine pores of the porous surface layer is preferably 55 μηη or less, and further preferably 45 μηι or less, particularly preferably 4 μηηι or less. If the porous surface layer of the above-mentioned abrasive crucible is Have When the average opening diameter of the pores exceeds 6 5 μη, the desired polishing rate cannot be obtained. The lower limit of the average pore diameter of the fine pores of the porous surface layer of the polishing pad is exemplified. As a preferred value, it is difficult to manufacture a polishing pad having an average opening diameter lower than that of the prior art. In the present specification, the average opening diameter means that the porous surface layer is in contact with the surface to be polished of the object to be polished. The surface, 163767.doc -21 - 201241165 obtained a certain measurement area from the obtained microscope photograph by means of the average value of the opening of the opening in the image analysis. The porous surface layer in the polishing pad of the 瓒 structure is not particularly limited as long as it has the above characteristics. The thickness of the polishing agent used in the ( structure (4) is appropriately adjusted according to the type of the polishing agent used, polishing conditions, etc. The fine pores of the surface layer are preferably elongated in the thickness direction of the porous surface layer and have a long history of the thickness of the surface layer of the porous surface layer. The base material layer of the polishing pad which has a laminated structure of a porous surface layer is preferably used in the above-described invention, and is not particularly limited, and a conventional suede type polishing pad can be suitably used. Specific examples of the base material layer to be contained include a non-woven foamed polyamine-based acid vinegar sheet such as polyester filled with a polyamino phthalate resin, and polyethylene terephthalate (PET). P〇lyethylene

Terephthalate)片材等。又，多孔質表面層典型的是可由聚 胺基甲酸酯樹脂所構成，但並不限定於此。 此種研磨墊市售有材質或蕭氏A硬度、平均開孔徑等具 有多樣變化者，因此可適當選擇此種市售品而用於本發明 中。 此種研磨裝置1 0之研磨條件並無特別限制，亦可藉由對 研磨頭2施加荷重以使其壓於研磨墊4上，而進一步增大研 磨壓力’提高研磨速度。研磨壓力雖亦取決於所使用之被 研磨面構成材料或研磨劑之組成 '研磨墊之種類，但較佳 為10〜50 kPa左右，就研磨速度於研磨對象物丨之被研磨面 内之均勻性、平坦性、防止刮痕等研磨缺陷之觀點而言， 163767.doc -22- 201241165 更佳為10〜40 kPa左右。研磨定盤3及研磨頭2之轉速較佳 為50〜500 rpm左右，但並不限定於此。又，研磨劑5之供 給量可根據被研磨面構成材料或研磨劑之組成、上述各研 磨條件等而適當調整、選擇，例如於研磨直徑為5〇 晶圓之情形時’供給量較佳為約5〜3〇〇 cm3/分鐘左右。 實施例 以下，使用實施例說明本發明，但本發明並不限定於以 下記載。例1〜14為實施例，例1 5〜20為比較例。 [例1] 將作為第1氧化石夕微粒子之平均一次粒徑為 10 nm之膠體 二氧化矽（第1氧化矽微粒子之固形物成分濃度為4〇質量％ 之水分散液）、與作為第2氧化矽微粒子之平均一次粒徑為 80 nm之膠體二氧化矽（第2氧化矽微粒子之固形物成分濃 度為40質量％之水分散液）’以如第丨氧化矽微粒子於第】氧 化石夕微粒子與第2氧化石夕微粒子之合計量中所占之調配比 例成為5質量％之比例加以混合，並充分地進行攪拌。平 均一次粒徑係由使用B E T法所測得之比表面積換算而得。 於所獲得之混合液中’以第i氧化石夕微粒子與第2氧化石夕 微粒子之合計量相對於最終所獲得之研磨劑之總質量（即 第1氧化矽微粒子及第2氧化矽微粒子之合計量斑水 之合計質量卿質量%之方式添加離子二= 研磨劑。於所獲得之研磨劑中，第i氧化矽微粒子及第2氧 化石夕微粒子為研磨粒成分。 表1中，對於上述例1中所獲得之研磨劑中之包含第i氧 163767.doc '23- 201241165 化夕微粒子與第2氧化矽微粒子之研磨粒成分表示有各氧 化石夕微粒子之平均—次粒徑、調配比例。X，—併表示有 ，相對於研磨劑總質量之研磨粒成分（第1氧化賴粒子與第 2氧化矽微粒子之合計)之含量(質量％)及水之含量(質量 %) 〇 再者’研_中所調配之氧切微粒子之平均—次粒和 為藉由氮吸附BET法測定比表面積所得之值。以下各： 中所使用之氧㈣微粒子之平均—次粒徑均為以相同方法 進行測定所得之值。 [例2〜20] 乂 ”例1相同之#式且以成為表i所示之組成之方式調配 表1所示之平均—次粒徑之第1氧切微粒子與第2氧化石夕 微粒子作為研磨粒成分，進而以第1氧切微粒子與第2氧 化石夕微粒子之合計量、即研磨粒成分之調配量相對於研磨 劑之總質量成為表1所示之量(質量％)之方式添加水，而製 備例2〜例20之研磨劑。再者，所使用之氧切微粒子均為 膠體二氧化矽。 [評價u 藉由以下方法評價上述中所獲得之例i〜例2 〇之研磨劑之 研磨特性。作為研磨特性之評價，對使用各種研磨墊1僅 一次性地使用研磨劑時之研磨速度進行評價。將結果一併 示於表1。 &lt;被研磨物&gt; 作為被研磨物，使用單晶藍寶石基板之2英吋晶圓（作光 I63767.doc -24- 201241165 公司製造’（0001)面’基板厚度為420 μιΏ)。 &lt;研磨塾&gt; 作為研磨墊，使用以下之蕭氏Α硬度及/或平均開孔徑分 別不同之4種麂皮墊、即包含基材層與表面層之研磨墊之 任一者，該表面層配設於上述基材層之主面上，具備與上 述單晶藍寶石基板之被研磨面接觸之表面，且具有於該表 面開孔並沿厚度方向伸長之多個微細孔。 塾A…蕭氏A硬度：18，平均開孔徑·· 3 〇 _ 塾Β…蕭氏Α硬度：18 ’平均開孔徑：μ μιη 塾C…蕭氏Α硬度：18，平均開孔徑：6〇 μιη 塾〇…蕭氏Α硬度：60，平均開孔徑：12 _ &lt;研磨方法&gt; 作為研磨機，使用SPEEDFAM公司製造之桌上研磨裝 置。研磨墊於試驗前使用毛刷進行調節。 於使用麂皮魏行研磨之情形時，將研磨劑之供給速度 設為H)⑽3/分鐘、研磨定盤之轉速設為的_、研磨壓力 設為3 psi即20.7 kPa、研磨時間設心分鐘而進行研磨。 又於研磨後，使用毛刷調節5分鐘之後進行新的研磨。 &lt;研磨速度&gt; 研磨速度係以每單位時間之基板厚度之變化量⑽/⑹進 行平^ Λ•體而5，對於上述評價中所使用之單晶藍寶石 基板爿疋厚度已知之未研磨基板之質量與各時間研磨後 土板貝s由其等之差求出質量變化，進而使用下述式 算出由質量變化求出之基板厚度之單位時間之變化。 I63767.doc -25- 201241165 (研磨速度（v)之計算式） △ m=m0-m 1 V=Am/m〇xT〇x60/t (式中，Δηια)表示研磨前後之質量變化，m0(g)表示未研 磨基板之初期質量，ml(g)表示研磨後基板之質量，V表示 研磨速度（μπι/hr)，T0表示未研磨基板之基板厚度（μηι)，t 表示研磨時間（min))。 163767.doc 26- 201241165 研磨速度(μηι/hr) Q § 12 μΓη 1 ο o f-H I 0.95 I 1 1 1 1 1 1 1 1 1 0.50 0.60 卜 o 0.80 1 t 〇 〇〇 60 μτη 1 ο 1.20 o 1 1 1 1 1 1 1 t 1 I 0.40 I 0.40 I ! 0.45 0.50 1 1 38 μη\ 〇 ο o o § 〇 § Ο ^―· s § 0.30 I 0.40 I 1 0.50 I 0.60 0.80 I 0.80 &lt; 30μηι 1 00 1 1.86 (N 1 t 1 I 1 » 1 1 1 寸 Ο 1 0.46 1 0.50 I I 0.55 I 1 1 墊種類 蕭氏A硬度 平均開孔徑 研磨劑組成 水含量 [質量％] 〇\ ON 00 〇\ Os S § ON »n 〇\ ir&gt; ON ON Os as in OS OS 00 Os IT) ON § 3 OS 研磨粒成分含量 [質量％] &lt;Ν »〇 o 〇 W&quot;) Ό (N o r-* o (N 〇 研磨粒成分組成 第2膠體二氧化矽 平均一次粒徑 [nm] § g § § § § g § g g o 00 宕 g § g g g 調配量 [質量％] ^Τ) as ON Os in as KT) Os ΐΛϊ CTn 〇 ON Os IT) On ON On On 〇\ 〇 〇 o 〇 〇 o o o o 第1膠體二氧化矽 平均一次粒徑 [nm] ο Ο o o 〇 〇 o o 〇 卜 (N 〇 〇 1 1 1 1 1 o |_1 »r&gt; in ^T) un 〇 o 〇 o o o ϊ CM m 寸 ¥ 5 v〇 卜 00 as w M l〇] 例.11 例q 例13 例14 例15 例16 例17 例18 例19 丨例20 -27- 163767.doc 201241165 由表1可知，以本發明之調配比例含有本發明之粒徑之 第1氧化矽微粒子及第2氧化矽微粒子之研磨劑與比較例之 研磨劑相比，研磨速度較大。再者’於上述研磨試驗中， 任一單晶藍寶石基板之被研磨面均被研磨為高品質。 [評價2] 對於上述中所獲得之例5及例1 8之研磨劑，利用以下方 法評價研磨劑因循環使用而含有被研磨物之研磨屑之情形 時的研磨粒之凝聚狀態（D95)及對PH值之影響，將結果示 於表2。 &lt;被研磨物&gt; 作為被研磨物，使用單晶藍寶石基板之2英吋晶圆（信光 公司製造’（0001)面，基板厚度為42〇 μηι)。 &lt;研磨墊&gt; 使用作為不織布之Suba800XY-Gro〇ve(NITTA HAAS公司 製造）。 &lt;研磨方法&gt; 作為研磨機’使用SPEEDFAM公司製造之桌上研磨裝 置。研磨墊於試驗前使用毛刷進行調節。將研磨劑之供給 速度設為200 cm3/分鐘、研磨定盤之轉速設為9〇 rpm、研 磨壓力設為5 psi即34.5 kPa、研磨時間設為60分鐘、18〇分 鐘、240分鐘而進行研磨。又’循環使用研磨劑。 &lt;研磨屑含有濃度之計算&gt; 163767.doc -28 - 201241165 於循環使用研磨劑特定時間（60分鐘、180分鐘、240分 鐘）後’藉由質量法且利用下式算出研磨使用後之研磨劑 中所含有之被研磨物之研磨屑濃度。 研磨屑濃度[質量°/。]=(研磨後之基板質量[g]_研磨前之基 板質量[g])/研磨劑（研磨使用後）之質量[g]xl〇〇 &lt;評價含有研磨屑之研磨劑之研磨粒之凝聚狀態之方法&gt; 對於上述例5之研磨劑及例18之研磨劑，分別於研磨使 用前、及研磨使用上述特定時間後含有被研磨物之研磨屑 之狀態下，使用藉由動態光散射法之Microtrac公司製造之 UPA150進行粒度分佈之測定。根據所獲得之粒度分佈， 對於D95(指粒度分佈中之累積值95〇/〇時之粒徑），藉由下式 算出研磨使用前後之D95之差 '即AD95。 △ D95[nm] =含有被研磨物之研磨屑之研磨使用後之研磨 劑之D95[nm]-研磨使用前之研磨劑之D95[nm] 〈評價含有研磨屑之研磨劑之pH值變化之方法&gt; 又，對於上述例5之研磨劑及例18之研磨劑，分別於研 磨使用前、及研磨使用上述特定時間·後含有被研磨物之研 磨屑之狀態下’使用 YOKOGAWA Electric Corporation公 司製造之ModelpH81進行pH值測定。藉由下式由所獲得之 pH測定值算出研磨使用前後之pH值之差、即ΔρΗ。 △ρΗ=研磨使用前之研磨劑之ρΗ值-含有被研磨物之研磨 屑之研磨使用後之研磨劑之pH值 163767.doc •29· 201241165 [表2] 研磨時間 評價項目 研磨劑 例5 例18 60分鐘 研磨屑濃度[質量％] 0.01 0.01 △D95[nm] 19 20 △pH 0.52 0.55 180分鐘 研磨屑濃度[質量％] 0.04 0.03 △D95[nm] 51 60 △pH 0.95 1.14 240分鐘 研磨屑濃度[質量％] 0.05 0.04 △D95[nm] 58 74 △pH 1.05 1.27 由表2可知，作為以本發明之調配比例含有本發明之粒 徑之第1氧化矽微粒子及第2氧化矽微粒子之研磨劑的例5 之研磨劑與作為比較例之例18之研磨劑相比，即便於含有 源自被研磨物之研磨屑之情形時，AD95亦較小，研磨粒 之凝聚被較佳地抑制。 又，作為以本發明之調配比例含有本發明之粒徑之第1 氧化矽微粒子及第2氧化矽微粒子之研磨劑的例5之研磨劑 與作為比較例之例1 8之研磨劑相比，即便於含有源自被研 163767.doc -30- 201241165 磨物之研磨屑之情形時，ΔρΗ之值亦較小。 即，可以說以本發明之調配比例含有本發明之粒徑之第 1氧化石夕微粒子及第2氧化石夕微粒子之研磨劑可抑制因循環 使用引起之研磨劑之性能下降，可長時間保持良好之研磨 性能。 [評價3] 對於上述中所獲得之例5及例1 8之研磨劑，利用以下方 法評價研磨精度。即，利用以下方法評價使用該等研磨劑 進行以下研磨時所獲得之被研磨面之研磨狀態，具體而言 為表面粗糙度（Ra :算術平均粗糙度）及基板邊緣部之塌邊 (面塌陷）狀態。將結果示於表3。 &lt;被研磨物&gt; 作為被研磨物，使用單晶藍寶石基板之2英吋晶圓（信光 公司製造，（0001)面’基板厚度為420 μπι)。 &lt;研磨墊&gt; 使用作為不織布之Suba800XY-Groove(NITTA HAAS公司 製造）。 &lt;研磨方法&gt; 作為研磨機，使用SPEEDFAM公司製造之桌上研磨裝 置。研磨墊於試驗前使用毛刷進行調節。將研磨劑之供給 速度設為200 cmV分鐘、研磨定盤之轉速設為9〇 rpm、研 磨壓力設為5 psi即34.5 kPa、研磨時間設為60分鐘而進行 研磨。又’循環使用研磨劑。 〈被研磨面之Ra之測定方法〉 使用光學計測機器測定上述研磨後之被研磨物之Ra。機 163767.doc •31 · 201241165 器係使用Canon公司製造之Zygo 0 &lt;被研磨面之邊緣部之塌邊（面塌陷）狀態之評價方法&gt; 為評價上述研磨後之被研磨物（基板）之邊緣部之塌邊（面 塌陷）’使用光學計測機器（Canon公司製造之Zygo)，如圖 2所示，測定厚度方向上之塌陷量（h)及寬度方向上之塌陷 量（X)。圖2(a)係表示研磨後之被研磨物（基板）1之整體之立 體圖’邊緣部之面塌陷狀態之測定係於被研磨面丨丨側之邊 緣部進行。圖2(b)係將被研磨面11側之邊緣部放大之圖。 圖2(b)中之E表示研磨前存在之被研磨物（基板）之邊緣。邊 緣（E)之位置係定義為自距離估計之邊緣之位置為内側2 mm之位置至同樣地距離該邊緣為内側4 mm之位置之間的 被研磨面11為平坦而找出。將邊緣（E)之位置作為基準（〇 mm) ’於厚度方向（h)及宽度方向（χ)上測定自上述（E)之位 置至基板之端部實際存在之位置之長度，分別設為塌陷 值。 [表3] 研磨時間 研磨劑 評價項目 例5 例18 60分鐘 Ra[nm] 0.32 0.46 基板邊緣部之塌陷 厚度方向⑻[nmj 200 280 寬度方向(x)[mm] 1.3 1.5 由表3可知，作為以本發明之調配比例含有本發明之粒 I63767.doc -32· 201241165 徑之第1氧化矽微粒子及第2氧化矽微粒子之研磨劑的例5 之研磨劑與作為比較例之例18之研磨劑相比，對被研磨物 進行研磨時所獲得之被研磨物之被研磨面之Ra之值較小。 又，作為以本發明之調配比例含有本發明之粒徑之第1 氧化矽微粒子及第2氧化矽微粒子之研磨劑的例5之研磨劑 與作為比較例之例18之研磨劑相比，對被研磨物進行研磨 時所獲得之.被研磨物之邊緣部之厚度方向及寬度方向上之 塌陷較少。 即以本發明之调配比例含有本發明之粒徑之第1氧化 矽微粒子及第2氧化矽微粒子之研磨劑可研磨精度良好且 高品質地精加工研磨對象物之被研磨面。 [評價4] 對於上述中所獲得之例5及例丨8之研磨劑，利用以下方 法評價對被研磨物進行研磨之情形時之壓力依存性。將結 果示於表4 » &lt;被研磨物&gt; 作為被研磨物，使用單晶藍寶石基板之2英吋晶圓（信光 公司製造，（0001)面’基板厚度為420 μίη)。 &lt;研磨墊&gt; 使用作為不織布之Suba800XY-Groove(NITTA HAAS公司 製造）。 &lt;研磨方法&gt; 作為研磨機，使用SPEEDFAM公司製造之桌上研磨裝 置。研磨墊於試驗前使用毛刷進行調節。關於各研磨劑進 163767.doc -33- 201241165 行如下2次研磨：將研磨劑之供給速度設為〗〇 cm3/分鐘、 研磨定盤之轉速設為90 rpm、研磨壓力設為5 psi即34.5 kPa及設為10 pSi即69.0 kpa。研磨時間均設為15分鐘，且 僅一次性地使用研磨劑。 &lt;研磨劑之壓力依存性評價方法&gt; 如下所示，研磨劑之壓力依存性係藉由如下方式求出： 將研磨壓力設為0 psi之情形及設為5 psi之情形時（低壓區 域時）、與設為5 psi之情形及設為1〇 psi之情形時（高壓區 域時）的各壓力區域時之研磨速度之差（△研磨速度）除以壓 力條件之差（△壓力）。可以說該值越大壓力依存性越強。 再者’研磨速度[μιη/hr]係以與上述相同之方式藉由每單位 時間之基板厚度之變化量而求得。又，於研磨壓力設為〇 psi之情形時，研磨速度設為〇。 進而’由該等結果與上述式算出各壓力區域時之普勒斯 頓係數。 (低壓區域時之壓力依存性） 低壓區域時之△研磨速度[pm/hr]=以5 psi進行研磨時之 研磨速度[pm/hr]-以0 psi進行研磨時之研磨速 低壓區域時之△壓力[psi] = 5 psi-0 psi 低壓區域時之研磨劑之壓力依存性=低壓區域時之（么研 磨速度/△壓力） (高壓區域時之壓力依存性） 高壓區域時之△研磨速度[pm/hr] =以1〇 pSi進行研磨時之 研磨速度[μηι/hr]-以5 psi進行研磨時之研磨速度[gm/hr] 163767.doc -34 - 201241165 高壓區域時之△壓力[psi]=10 psi-5 psi 高壓區域時之研磨劑之壓力依存性=高壓區域時之（△研 磨速度/△壓力） [表4]Terephthalate) Sheets, etc. Further, the porous surface layer is typically composed of a polyurethane resin, but is not limited thereto. Such a polishing pad is commercially available in various materials such as a material, a Shore A hardness, and an average opening diameter. Therefore, such a commercially available product can be appropriately selected and used in the present invention. The polishing conditions of the polishing apparatus 10 are not particularly limited, and the polishing pressure can be further increased by applying a load to the polishing head 2 to press against the polishing pad 4 to increase the polishing rate. Although the polishing pressure depends on the type of the material to be polished or the composition of the abrasive to be used, the type of the polishing pad is preferably about 10 to 50 kPa, and the polishing rate is uniform in the surface to be polished of the object to be polished. 163767.doc -22- 201241165 is preferably about 10 to 40 kPa from the viewpoint of scratching properties such as scratch, scratch, and scratch resistance. The number of rotations of the polishing platen 3 and the polishing head 2 is preferably about 50 to 500 rpm, but is not limited thereto. Further, the amount of the polishing agent 5 to be supplied can be appropriately adjusted and selected depending on the composition of the surface to be polished or the composition of the polishing agent, the respective polishing conditions, and the like. For example, when the polishing diameter is 5 Å, the supply amount is preferably About 5~3〇〇cm3/min. EXAMPLES Hereinafter, the present invention will be described using examples, but the present invention is not limited to the following description. Examples 1 to 14 are examples, and examples 1 to 20 are comparative examples. [Example 1] A colloidal cerium oxide having an average primary particle diameter of 10 nm as the first oxidized fine particles (an aqueous dispersion having a solid content concentration of the first cerium oxide fine particles of 4 〇 mass%) 2 colloidal cerium oxide having an average primary particle diameter of 80 nm of cerium oxide microparticles (an aqueous dispersion having a solid content concentration of 40% by mass of the second cerium oxide microparticles) The blending ratio in the total amount of the fine particles and the second fine particles of the second oxide is 5% by mass, and the mixture is sufficiently stirred. The average primary particle size is obtained by converting the specific surface area measured by the B E T method. In the obtained mixed liquid, 'the total amount of the ith oxidized cerium particles and the second oxidized cerium particles is relative to the total mass of the finally obtained abrasive (ie, the first cerium oxide microparticles and the second cerium oxide microparticles) In the obtained abrasive, the i-th yttrium oxide fine particles and the second oxidized oxidized fine particles are abrasive particles. In the above-mentioned abrasive, the above-mentioned abrasives are the abrasive particles. The abrasive component contained in the abrasive obtained in Example 1 containing the i-th oxygen 163767.doc '23-201241165 cerium microparticles and the second cerium oxide microparticles has an average-secondary particle diameter and a blending ratio of each oxidized oxide microparticle. X, - indicates the content (% by mass) of the abrasive component (the total of the first oxide particles and the second cerium oxide particles) and the water content (% by mass) with respect to the total mass of the abrasive. The average of the oxygen-cut microparticles in the 'research' is the value obtained by measuring the specific surface area by the nitrogen adsorption BET method. The following: the average of the oxygen (4) microparticles used in the micro-particles are the same Method The value obtained by the measurement is carried out. [Examples 2 to 20] The first type of the oxygen-cutting microparticles and the first-order particle diameter shown in Table 1 are prepared in the same manner as the composition shown in Table 1. 2 The oxide fine particles are used as the abrasive grain component, and the total amount of the first oxygen cut fine particles and the second fine oxide fine particles, that is, the total amount of the abrasive particles is the amount shown in Table 1 with respect to the total mass of the polishing agent ( In the case of mass %), water was added to prepare the abrasives of Examples 2 to 20. Further, the oxygen-cut fine particles used were colloidal cerium oxide. [Evaluation u The following examples were evaluated by the following method. ~Example 2 The polishing properties of the abrasives were evaluated. The evaluation of the polishing properties was carried out for the polishing rate when the polishing agents were used only once, using the polishing pads 1. The results are shown in Table 1. As the object to be polished, a 2-inch wafer of a single crystal sapphire substrate was used (manufactured by the company I63767.doc -24-201241165, the '0001 surface' substrate thickness was 420 μm). &lt;Grinding 塾&gt; As a polishing pad, the following hardness and Or any of four kinds of suede mats having different average opening diameters, that is, any one of a polishing pad including a base material layer and a surface layer, the surface layer being disposed on a main surface of the base material layer, and having the single crystal The surface of the sapphire substrate that is in contact with the surface to be polished, and has a plurality of micropores that are opened in the surface and elongated in the thickness direction. 塾A... Shore A hardness: 18, average opening aperture·· 3 〇 _ 塾Β... Xiao Α Hardness: 18 'Average opening diameter: μ μιη 塾C... Xiao's hardness: 18, average opening diameter: 6〇μιη 塾〇... Xiao's hardness: 60, average opening diameter: 12 _ &lt; grinding method &gt As a grinder, a table grinding device manufactured by SPEEDFAM was used. The polishing pad was adjusted using a brush before the test. In the case of grinding with a skin, the supply rate of the abrasive is set to H) (10) 3 / min, the rotation speed of the polishing plate is set to _, the polishing pressure is set to 3 psi, that is, 20.7 kPa, and the grinding time is set to the center of minutes. And grinding. After the grinding, a new brush was applied after adjusting for 5 minutes using a brush. &lt;Grinding speed&gt; The polishing rate is performed by the amount of change (10)/(6) of the substrate thickness per unit time, and the uncrystallized substrate having a known thickness of the single crystal sapphire substrate used in the above evaluation. The mass is determined by the difference between the mass and the soil slab after each time of polishing, and the change in the thickness per unit time obtained by the mass change is calculated by the following formula. I63767.doc -25- 201241165 (calculation formula of grinding speed (v)) △ m=m0-m 1 V=Am/m〇xT〇x60/t (where Δηια) indicates the mass change before and after grinding, m0( g) indicates the initial mass of the unpolished substrate, ml (g) indicates the mass of the substrate after polishing, V indicates the polishing rate (μπι/hr), T0 indicates the substrate thickness (μηι) of the unpolished substrate, and t indicates the polishing time (min). ). 163767.doc 26- 201241165 Grinding speed (μηι/hr) Q § 12 μΓη 1 ο o fH I 0.95 I 1 1 1 1 1 1 1 1 1 0.50 0.60 b o 0.80 1 t 〇〇〇60 μτη 1 ο 1.20 o 1 1 1 1 1 1 1 t 1 I 0.40 I 0.40 I ! 0.45 0.50 1 1 38 μη\ 〇ο oo § 〇§ Ο ^―· s § 0.30 I 0.40 I 1 0.50 I 0.60 0.80 I 0.80 &lt; 30μηι 1 00 1 1.86 (N 1 t 1 I 1 » 1 1 1 inch Ο 1 0.46 1 0.50 II 0.55 I 1 1 Mat type Shaw A hardness average open pore size abrasive composition water content [% by mass] 〇\ON 00 〇\ Os S § ON »n 〇\ ir&gt; ON ON Os as in OS OS 00 Os IT) ON § 3 OS Abrasive content [% by mass] &lt;Ν »〇o 〇W&quot;) Ό (N o r-* o (N 〇Abrasive grain composition composition 2nd colloidal cerium oxide average primary particle size [nm] § g § § § § g § ggo 00 宕g § ggg compounding amount [% by mass] ^Τ) as ON Os in as KT) Os ΐΛϊ CTn 〇ON Os IT) On ON On On 〇\ 〇〇o 〇〇oooo The first colloidal ceria average primary particle size [nm] ο Ο oo 〇〇oo 〇 ( (N 〇〇1 1 1 1 1 o | _1 r&gt; in ^T) un 〇o 〇ooo ϊ CM m inch ¥ 5 v〇 00 as w M l〇] Example. 11 cases q cases 13 cases 14 cases 15 cases 16 cases 17 cases 18 cases 19 cases 20 - 27-163767.doc 201241165 It can be seen from Table 1 that the polishing agent containing the first cerium oxide microparticles and the second cerium oxide microparticles of the particle diameter of the present invention has a higher polishing rate than the polishing agent of the comparative example. Big. Further, in the above polishing test, the polished surface of any of the single crystal sapphire substrates was polished to a high quality. [Evaluation 2] The abrasives of Examples 5 and 18 obtained in the above-mentioned methods were evaluated for the state of aggregation (D95) of the abrasive grains when the polishing slurry contained the polishing material by the use of the polishing agent was recycled by the following method. The effect on the pH value is shown in Table 2. &lt;Material to be polished&gt; As the object to be polished, a 2-inch wafer of a single crystal sapphire substrate (manufactured by Shinko Co., Ltd. (0001) surface, a substrate thickness of 42 〇 μηι) was used. &lt;Polishing pad&gt; Suba800XY-Gro〇ve (manufactured by NITTA HAAS Co., Ltd.) as a non-woven fabric was used. &lt;Grinding method&gt; As a polishing machine, a table grinding device manufactured by SPEEDFAM Co., Ltd. was used. The polishing pad was adjusted using a brush before the test. The polishing rate was set to 200 cm 3 /min, the number of rotations of the polishing plate was set to 9 rpm, the polishing pressure was set to 5 psi, that is, 34.5 kPa, and the polishing time was set to 60 minutes, 18 minutes, and 240 minutes. . Also, the abrasive is recycled. &lt;Calculation of the concentration of the polishing paste&gt; 163767.doc -28 - 201241165 After the specific time (60 minutes, 180 minutes, 240 minutes) of the polishing agent is recycled, the grinding after the polishing is calculated by the mass method using the following formula The concentration of the grinding debris of the object to be polished contained in the agent. Grinding dust concentration [mass ° /. ]=(substrate quality after grinding [g]_substrate quality before grinding [g])/mass of abrasive (after polishing) [g]xl〇〇&lt; evaluation of abrasive grains containing abrasives Method of agglomerating state&gt; The polishing agent of the above-mentioned Example 5 and the polishing agent of Example 18 were used for dynamic light scattering in a state in which the polishing dust of the object to be polished was used before polishing and after the specific time of polishing. The UPA150 manufactured by Microtrac Corporation of France was used to determine the particle size distribution. According to the obtained particle size distribution, for D95 (refer to the particle diameter at the cumulative value of 95 Å/〇 in the particle size distribution), the difference of D95 before and after the polishing use is calculated by the following formula, i.e., AD95. △ D95 [nm] = D95 [nm] of the abrasive after polishing using the abrasive residue of the object to be polished - D95 [nm] of the abrasive before use of the abrasive (evaluation of the pH value of the abrasive containing the abrasive residue) In addition, the polishing agent of the above-mentioned Example 5 and the polishing agent of Example 18 were respectively manufactured by YOKOGAWA Electric Corporation before being used for polishing and after polishing using the polishing chips of the object to be polished. The pH value of Model pH 81 was determined. From the obtained pH measurement value, the difference between the pH values before and after the polishing use, that is, ΔρΗ, was calculated by the following formula. ΔρΗ = pH value of the abrasive before polishing - pH of the abrasive after polishing using the abrasive residue of the object to be polished 163767.doc • 29· 201241165 [Table 2] Grinding time evaluation item Example of polishing agent 5 cases 18 60 minutes grinding dust concentration [% by mass] 0.01 0.01 △ D95 [nm] 19 20 △ pH 0.52 0.55 180 minutes grinding dust concentration [% by mass] 0.04 0.03 △ D95 [nm] 51 60 △ pH 0.95 1.14 240 minutes grinding debris concentration [% by mass] 0.05 0.04 ΔD95 [nm] 58 74 ΔpH 1.05 1.27 As is apparent from Table 2, the first cerium oxide microparticles and the second cerium oxide microparticles containing the particle diameter of the present invention are contained in the mixing ratio of the present invention. In the case of the polishing agent of the example 5, the AD95 was smaller than the polishing agent of the example 18 of the comparative example, and the aggregation of the abrasive grains was preferably suppressed. Further, as an abrasive of Example 5 containing the first cerium oxide fine particles and the second cerium oxide fine particles having the particle diameter of the present invention in the mixing ratio of the present invention, compared with the polishing agent of Example 18 as a comparative example, That is, when it is convenient to contain the grinding debris derived from the grinding material of 163767.doc -30- 201241165, the value of ΔρΗ is also small. In other words, it can be said that the abrasive containing the first oxidized fine particles and the second oxidized fine particles of the particle diameter of the present invention in the blending ratio of the present invention can suppress the deterioration of the performance of the abrasive due to recycling, and can be maintained for a long period of time. Good grinding performance. [Evaluation 3] With respect to the abrasives of Examples 5 and 18 obtained in the above, the polishing accuracy was evaluated by the following method. That is, the polishing state of the surface to be polished obtained by the following polishing using the above-mentioned polishing agents, specifically, the surface roughness (Ra: arithmetic mean roughness) and the collapse of the edge portion of the substrate (surface collapse) were evaluated by the following method. )status. The results are shown in Table 3. &lt;Material to be polished&gt; As the object to be polished, a 2-inch wafer of a single crystal sapphire substrate (manufactured by Shinko Co., Ltd., (0001) plane substrate thickness: 420 μm) was used. &lt;Polishing pad&gt; Suba800XY-Groove (manufactured by NITTA HAAS Co., Ltd.) as a non-woven fabric was used. &lt;Polishing method&gt; As the polishing machine, a table polishing apparatus manufactured by SPEEDFAM Co., Ltd. was used. The polishing pad was adjusted using a brush before the test. The polishing rate was set to 200 cmV minutes, the number of rotations of the polishing plate was set to 9 rpm, the grinding pressure was set to 5 psi, that is, 34.5 kPa, and the polishing time was set to 60 minutes. Also, the abrasive is recycled. <Measurement Method of Ra of Polished Surface> The Ra of the object to be polished after the above polishing was measured using an optical measuring device. Machine 163767.doc •31 · 201241165 The system uses the Zygo 0 manufactured by Canon Co., Ltd.; the evaluation method of the collapsed edge of the edge of the surface to be polished (surface collapse)> To evaluate the object to be polished after the polishing (substrate) The edge of the edge portion (face collapse) was measured using an optical measuring machine (Zygo manufactured by Canon Co., Ltd.) as shown in Fig. 2, and the amount of collapse (h) in the thickness direction and the amount of collapse (X) in the width direction were measured. Fig. 2(a) is a perspective view showing the entire surface of the object to be polished (substrate) 1 after polishing. The measurement of the collapsed state of the edge portion is performed on the edge portion of the surface to be polished. Fig. 2(b) is an enlarged view of the edge portion on the side of the surface to be polished 11. E in Fig. 2(b) indicates the edge of the object to be polished (substrate) existing before polishing. The position of the edge (E) is defined as being flat from the position where the edge of the distance estimation is 2 mm from the inside to the position where the edge is 4 mm from the inside. The position of the edge (E) is used as a reference (〇mm) in the thickness direction (h) and the width direction (χ), and the length from the position of the above (E) to the position where the end portion of the substrate actually exists is determined as Collapse value. [Table 3] Grinding time Abrasive evaluation item Example 5 Example 18 60 minutes Ra [nm] 0.32 0.46 Substrate thickness direction of the edge portion of the substrate (8) [nmj 200 280 Width direction (x) [mm] 1.3 1.5 As can be seen from Table 3, The polishing agent of Example 5 containing the abrasive of the first cerium oxide microparticles and the second cerium oxide microparticles of the present invention having the particles I63767.doc-32·201241165 diameter of the present invention and the abrasive of the example 18 of the comparative example In contrast, the value of Ra of the surface to be polished of the object to be polished obtained when the object to be polished is polished is small. Further, as an abrasive of Example 5 containing the first cerium oxide fine particles and the second cerium oxide fine particles having the particle diameter of the present invention in the mixing ratio of the present invention, compared with the polishing agent of Example 18 as a comparative example, When the object to be polished is polished, the edge portion of the object to be polished has less collapse in the thickness direction and the width direction. In other words, the polishing agent containing the first cerium oxide fine particles and the second cerium oxide fine particles having the particle diameter of the present invention can be used to finish the surface to be polished of the object to be polished with high precision and high quality. [Evaluation 4] With respect to the abrasives of Examples 5 and 8 obtained in the above, the pressure dependency in the case of polishing the object to be polished was evaluated by the following method. The results are shown in Table 4 » &lt;Materials to be polished&gt; As a workpiece to be polished, a 2-inch wafer of a single crystal sapphire substrate (manufactured by Shinko Co., Ltd., (0001) plane substrate thickness: 420 μίη) was used. &lt;Polishing pad&gt; Suba800XY-Groove (manufactured by NITTA HAAS Co., Ltd.) as a non-woven fabric was used. &lt;Polishing method&gt; As the polishing machine, a table polishing apparatus manufactured by SPEEDFAM Co., Ltd. was used. The polishing pad was adjusted using a brush before the test. For each of the abrasives, 163767.doc -33- 201241165 is performed as follows: the supply rate of the abrasive is set to 〇cm3/min, the rotation speed of the polishing plate is set to 90 rpm, and the polishing pressure is set to 5 psi or 34.5. kPa and set to 10 pSi or 69.0 kpa. The grinding time was set to 15 minutes, and the abrasive was used only once. &lt;Method for Evaluating Pressure Dependence of Abrasive Agent&gt; The pressure dependence of the polishing agent was determined as follows: When the polishing pressure was set to 0 psi and when it was set to 5 psi (low pressure region) The difference in the polishing rate (Δ polishing rate) in each pressure region when the pressure is set to 5 psi and in the case of 1 psi (in the high pressure region) is divided by the difference in pressure conditions (Δ pressure). It can be said that the larger the value, the stronger the pressure dependence. Further, the polishing rate [μιη/hr] was obtained by the amount of change in the thickness of the substrate per unit time in the same manner as described above. Further, when the polishing pressure is set to 〇 psi, the polishing speed is set to 〇. Further, the Plyston coefficient in each pressure region is calculated from the above results and the above equation. (Pressure dependence in low pressure region) △ Grinding speed in low pressure region [pm/hr] = Grinding speed at 5 psi (pm/hr) - Grinding speed in low pressure region at 0 psi △pressure [psi] = 5 psi-0 psi Pressure dependence of the abrasive in the low pressure region = (when the grinding speed / Δ pressure) in the low pressure region (pressure dependence in the high pressure region) △ grinding speed in the high pressure region [pm/hr] = grinding speed when grinding with 1〇pSi [μηι/hr] - grinding speed when grinding at 5 psi [gm/hr] 163767.doc -34 - 201241165 Δ pressure in high pressure region [ Psi]=10 psi-5 psi Pressure dependence of the abrasive in the high pressure zone = at the high pressure zone (△ grinding speed / Δ pressure) [Table 4]

又，將使用例5及例18之研磨劑進行上述研磨時之研磨 【力[psi]與研磨速度[txm/hr]之關係'製成圖表並示於圖3。 圖3可知，作為以本發明之調配比例含有本發明 之粒徑之第1氧化矽微粒子及第2氧化矽微粒子之研磨劑的 例5之研^磨J與作為比較例之例^ ^之研磨劑相比，壓力依 一較门又，關於例5之研磨劑.，如表4所示，且於圖3 所不之圖表中4 # ^ σ於自低壓區域至高壓區域之範圍内傾斜 :可飧姓Γ gp便於自低壓區域至高壓區域之寬廣範圍内 之二磨劍：勒斯頓係數。另一方面’於作為比較例之例18 壓=1:，如表4所示，且於圖3所示之圖表中可知與低 &amp; &amp;域相比，於含 、问£區域中傾斜度變得非常小，於高壓區 163767.doc -35- 201241165 域中無法維持普勒斯頓係數。 [評價5] 對於上述中所獲得之例8及例16之研磨劑，利用以下方 法評價對被研磨物進行研磨之情形時之溫度依存性。將結 果不於表5。 &lt;被研磨物&gt; 作為被研磨物，使用單晶藍寶石基板之2英吋晶圓（信光 公司製造，（0001)面，基板厚度為42〇 μηι)。 &lt;研磨塾&gt; 作為研磨墊，使用與上述[評價中所使用者相同之墊 A(蕭氏A硬度：18，平均開孔徑：3〇㈣，麂皮墊）。 &lt;研磨方法&gt; 作為研磨機，使用SPEEDFAM公司製造之桌上研磨裝 置。研磨墊於試驗前使用毛刷進行調節。將研磨劑之供給 速度設為10 cm3/分鐘、研磨定盤之轉速設為6〇 rpm、研磨 壓設為3 psi即20.7 kPa、研磨時間設為15分鐘而進行研 磨。又，僅一次性地使用研磨劑。再者，關於各研磨劑， 進行將研磨墊之溫度固定於22t附近之情形、與固定於 27°C附近之情形之2次研磨。 &lt;研磨劑之溫度依存性評價方法&gt; 如下所示，研磨劑之溫度依存性係藉由將研磨墊之溫度 固定於22 c附近之情形、與固定於27。〇附近之情形的研磨 速度之差（△研磨速度）除以溫度條件之差（△溫度）而求得。 可以說該值越大溫度依存性越強。再者，研磨速度[μηι/1ΐΓ] 163767.doc -36 - 201241165 係以與上述相同之方式藉由每單位時間之基板厚度之變化 量而求得。 △研磨速度bm/hr] =將定盤之溫度保持為高溫（27»c附近） 進行研磨時之研磨速度[pm/hr]_將定盤之溫度保持為低溫 (22°C附近）進行研磨時之研磨速度[μηι/1ΐΓ] △溫度=高溫（27°C附近之實測值）_低溫（22°c附近之實測 值） 研磨劑之溫度依存性=△研磨速度/△溫度 [表5] 評價項目 研磨劑 例8 例16 △研磨速度[μητ；1^ 0.3 0.1 Δ溫度[°c] 5 3 △研磨速度/Δ溫度 --------- 0.06 0.03 &quot;由表5可去。，作為以本發明之調配比例含有|發明之粒 〃之第1氧切#粒子及第2氧化碎微粒子之研磨劑的例8 之研磨劑與作為比較例之例16之研磨劑相比，溫度依存性 較高。 已詳細且參照特定實施態樣說明了本發明，但業者應明 瞭只要於殘離本發明之與精神便可施加各種修正或 變更。 本申請案係基於2011年4月11曰提出申請之曰本專利申 凊2〇11_〇87384及2()11年12月21日提出巾請之日本專利申 I63767.doc •37· 201241165 请2011-279183者，且其内容作為參照併入本文β 產業上之可利用性 根據本發明，對所要研磨之研磨對象物、尤其是藍寶石 (α-Α12〇3)基板、碳化石夕（Sic)基板、氮化鎵（GaN)基板等硬 度較高之化合物單晶基板之被研磨面可一面維持為高品質 一面進行高速研磨。藉此，可有助於提高該等基板之生產 性。 【圖式簡單說明】 圖1係表示本發明之研磨方法中可使用之研磨裝置之一 例之圖》 圖2(a)及圖2(b)係表示於實施例中評價藉由本發明之研 磨劑所研磨之被研磨物之基板邊緣部之塌邊（面塌陷）時之 測定點之圖。 圖3係表示使用實施例中所獲得之研磨劑進行被研磨面 之研磨時之研磨壓力與研磨速度之關係之圖表。 【主要元件符號說明】 1 研磨對象物 2 研磨頭 3 研磨定盤 4 研磨墊 5 研磨劑 6 研磨劑供給配管 10 研磨裝置 11 被研磨面 163767.doc •38·Further, the polishing in the above polishing using the polishing agents of Examples 5 and 18 [the relationship between the force [psi] and the polishing rate [txm/hr]] is shown in Fig. 3 . 3, the grinding agent of Example 5 containing the first cerium oxide microparticles and the second cerium oxide microparticles of the particle diameter of the present invention in the blending ratio of the present invention, and the grinding method as a comparative example Compared with the agent, the pressure is different from that of the door. For the abrasive of Example 5, as shown in Table 4, and in the graph of Figure 3, 4 # ^ σ is inclined from the low pressure region to the high pressure region: The surname Γ gp facilitates the two-sword sword from the low-pressure region to the high-pressure region: the Rayston coefficient. On the other hand, in Example 18 as a comparative example, pressure = 1: as shown in Table 4, and in the graph shown in Fig. 3, it is known that the slope is in the region of the inclusion and the area compared with the low &amp;&amp; The degree becomes very small and the Preston coefficient cannot be maintained in the high pressure zone 163767.doc -35- 201241165. [Evaluation 5] With respect to the polishing agents of Examples 8 and 16 obtained above, the temperature dependence in the case of polishing the object to be polished was evaluated by the following method. The results will not be as shown in Table 5. &lt;Material to be polished&gt; As the object to be polished, a 2-inch wafer of a single crystal sapphire substrate (manufactured by Shinko Co., Ltd., (0001) plane, substrate thickness: 42 〇 μηι) was used. &lt;Grinding 塾&gt; As the polishing pad, the same pad A as the above-mentioned user (Shoal A hardness: 18, average opening diameter: 3 〇 (four), 麂 pad) was used. &lt;Polishing method&gt; As the polishing machine, a table polishing apparatus manufactured by SPEEDFAM Co., Ltd. was used. The polishing pad was adjusted using a brush before the test. The polishing rate was set to 10 cm3/min, the rotation speed of the polishing plate was set to 6 rpm, the polishing pressure was set to 3 psi, that is, 20.7 kPa, and the polishing time was set to 15 minutes. Also, the abrasive is used only once. Further, regarding each of the polishing agents, the polishing was carried out by fixing the temperature of the polishing pad to a vicinity of 22 t and the secondary polishing in the case of being fixed at around 27 °C. &lt;Method for Evaluating Temperature Dependence of Abrasive Agent&gt; As shown below, the temperature dependence of the polishing agent is fixed to 27 by fixing the temperature of the polishing pad to the vicinity of 22 c. The difference in the polishing speed (Δ polishing rate) in the vicinity of 〇 was obtained by dividing the difference in temperature conditions (Δ temperature). It can be said that the larger the value, the stronger the temperature dependence. Further, the polishing rate [μηι/1ΐΓ] 163767.doc -36 - 201241165 was obtained by the amount of change in the thickness of the substrate per unit time in the same manner as described above. △ polishing rate bm / hr] = maintain the temperature of the plate at a high temperature (near 27»c). Grinding speed at the time of grinding [pm/hr] _ keep the temperature of the plate at a low temperature (near 22 ° C) Polishing speed [μηι/1ΐΓ] △ Temperature = high temperature (measured value near 27 ° C) _ low temperature (measured value around 22 ° c) Temperature dependence of abrasive = △ grinding speed / △ temperature [Table 5] Evaluation item abrasive example 8 Example 16 △ grinding speed [μητ; 1^ 0.3 0.1 Δ temperature [°c] 5 3 △ grinding speed / Δ temperature --------- 0.06 0.03 &quot; can be removed from Table 5 . The polishing agent of Example 8 containing the first oxygen cut #particle of the inventive pellet and the abrasive of the second oxidized fine particle according to the blending ratio of the present invention was compared with the abrasive of Example 16 as a comparative example. High dependency. The present invention has been described in detail with reference to the specific embodiments thereof, and it should be understood that various modifications and changes may be This application is based on the application filed on April 11, 2011. This patent application 2〇11_〇87384 and 2() December 21, 2011, the Japanese patent application I63767.doc •37·201241165 According to the present invention, the object to be polished, in particular the sapphire (α-Α12〇3) substrate, carbonized stone (Sic), is incorporated herein by reference. The polished surface of the compound single crystal substrate having a high hardness such as a substrate or a gallium nitride (GaN) substrate can be polished at a high speed while maintaining high quality. Thereby, it can contribute to improving the productivity of the substrates. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an example of a polishing apparatus usable in the polishing method of the present invention. Fig. 2(a) and Fig. 2(b) show the evaluation of the abrasive by the present invention in the examples. A view of the measurement point when the edge of the substrate of the object to be polished is collapsed (face collapse). Fig. 3 is a graph showing the relationship between the polishing pressure and the polishing rate when the surface to be polished is polished using the abrasive obtained in the examples. [Description of main component symbols] 1 Object to be polished 2 Grinding head 3 Grinding plate 4 Grinding pad 5 Abrasive 6 Abrasive supply pipe 10 Grinding device 11 Surface to be polished 163767.doc •38·

Claims (1)

201241165 七、申請專利範圍： 1 · 一種研磨劑’其係用以對研磨對象物之被研磨面進行研 磨者， 其含有平均一次粒徑為5〜30 nm之第1氧化矽微粒子、 平均一次粒徑為40〜125 nm之第2氧化矽微粒子、及水， 且上述第1氧化石夕微粒子於上述第1氧化石夕微粒子與第2 氧化矽微粒子之合計量中所占之比例為0.7質量％以上且 未達60質量％。 2.如請求項1之研磨劑，其中上述第2氧化矽微粒子之平均 一次粒控為45〜110 nm。 3.如請求項1或2之研磨劑，其中上述第1氧化矽微粒子之 平均一次粒徑為5〜15 nm。 4. 如請求項1至3中任一項之研磨劑，其中上述第丨氧化矽 微粒子於上述第1氧化矽微粒子與第2氧化矽微粒子之合 計量中所占之比例為1〜5 5質量0/〇。 5. 如請求項丨至3中任一項之研磨劑，其中上述第丨氧化矽 微粒子於上述第〗氧化矽微粒子與第2氧化矽微粒子之合 計量中所占之比例為3〜50質量％。 6. 如請求項⑴中任一項之研磨劑’其中上述第i氧化矽 微粒子與第2氧化矽微粒子之合計量相對於研磨劑總質 量之比例為0.01〜50質量％。 / . -種研磨方法’其係將研磨劑供給至研磨墊，使研磨對 象物之被研磨面與上述研磨墊接觸，藉由兩者間之相對 運動進行研磨者，且 163767.doc 201241165 使用如请求項1至6中任一項之研磨劑作為上磨 劑。 8. 如請求項7之研磨方法’其中上述研磨塾為包含 基材層、及 面層之研磨墊，該表面層配設於上述基材層之主面 〃、備與上述研磨對象物之被研磨面接觸之表面，且 具有於該表面開孔並沿厚度方向伸長之多個微細孔。 9. 如„月求項8之研磨•法，其中上述研磨塾之表面層之依 據Jis κ 6253所測；^之蕭氏Α硬度為卜65。 10. 士响求項8或9之研磨方法，其中上述表面層所具有之微 細孔之平均開孔徑為1〜65 μΓη。 163767.doc201241165 VII. Patent application scope: 1 · An abrasive agent for polishing a polished surface of an object to be polished, which contains first cerium oxide microparticles having an average primary particle diameter of 5 to 30 nm, and an average primary particle The second cerium oxide microparticles having a diameter of 40 to 125 nm and water, and the ratio of the first oxidized fine particles to the total amount of the first oxidized fine particles and the second cerium oxide microparticles is 0.7% by mass. The above is less than 60% by mass. 2. The abrasive of claim 1, wherein the average second particle size of the second cerium oxide microparticles is 45 to 110 nm. 3. The abrasive according to claim 1 or 2, wherein the first primary particle diameter of the first cerium oxide microparticles is 5 to 15 nm. 4. The abrasive according to any one of claims 1 to 3, wherein the ratio of the first cerium oxide microparticles to the total amount of the first cerium oxide microparticles and the second cerium oxide microparticles is 1 to 5 5 mass 0/〇. 5. The abrasive according to any one of claims 3 to 3, wherein the ratio of the cerium oxide particles to the total amount of the cerium oxide particles and the second cerium oxide particles is 3 to 50% by mass. . 6. The abrasive of the item (1), wherein a ratio of the total amount of the i-th yttrium oxide microparticles to the second cerium oxide microparticles to the total mass of the abrasive is 0.01 to 50% by mass. - a kind of polishing method which supplies an abrasive to a polishing pad, and the surface to be polished of the object to be polished is brought into contact with the polishing pad, and is polished by relative movement between the two, and 163767.doc 201241165 is used as The abrasive of any one of claims 1 to 6 is used as an abrasive. 8. The polishing method according to claim 7, wherein the polishing pad is a polishing pad including a substrate layer and a surface layer, and the surface layer is disposed on a main surface of the substrate layer, and is prepared by the polishing object. The surface in contact with the polishing surface has a plurality of micropores which are opened at the surface and elongated in the thickness direction. 9. For example, the grinding method of the item 8 of the month, wherein the surface layer of the above-mentioned grinding crucible is measured according to Jis κ 6253; the hardness of Xiao's Α is 65. 10. The grinding method of the 8 or 9 The average pore diameter of the micropores of the surface layer is 1 to 65 μΓη. 163767.doc
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