JP2009510797A5 - - Google Patents
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- Publication number
- JP2009510797A5 JP2009510797A5 JP2008534569A JP2008534569A JP2009510797A5 JP 2009510797 A5 JP2009510797 A5 JP 2009510797A5 JP 2008534569 A JP2008534569 A JP 2008534569A JP 2008534569 A JP2008534569 A JP 2008534569A JP 2009510797 A5 JP2009510797 A5 JP 2009510797A5
- Authority
- JP
- Japan
- Prior art keywords
- liquid carrier
- abrasive
- suspended
- polishing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 10
- 238000005498 polishing Methods 0.000 claims 7
- 239000007788 liquid Substances 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 229920001577 copolymer Polymers 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 1
- 239000008139 complexing agent Substances 0.000 claims 1
- 229910021485 fumed silica Inorganic materials 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920001451 polypropylene glycol Polymers 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/243,140 US20070077865A1 (en) | 2005-10-04 | 2005-10-04 | Method for controlling polysilicon removal |
| US11/243,140 | 2005-10-04 | ||
| PCT/US2006/037831 WO2007041203A1 (en) | 2005-10-04 | 2006-09-29 | Method for controlling polysilicon removal |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009510797A JP2009510797A (ja) | 2009-03-12 |
| JP2009510797A5 true JP2009510797A5 (enExample) | 2009-11-05 |
| JP5689581B2 JP5689581B2 (ja) | 2015-03-25 |
Family
ID=37499658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008534569A Expired - Fee Related JP5689581B2 (ja) | 2005-10-04 | 2006-09-29 | ポリシリコンの除去を制御するための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20070077865A1 (enExample) |
| JP (1) | JP5689581B2 (enExample) |
| KR (1) | KR101165875B1 (enExample) |
| CN (1) | CN101322227B (enExample) |
| TW (1) | TWI316272B (enExample) |
| WO (1) | WO2007041203A1 (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8092707B2 (en) | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
| WO2007038399A2 (en) * | 2005-09-26 | 2007-04-05 | Cabot Microelectronics Corporation | Metal cations for initiating chemical mechanical polishing |
| PT2167278T (pt) * | 2007-06-25 | 2019-02-05 | Mondofix Inc | Método e dispositivo de remoção de riscos |
| WO2010123300A2 (en) * | 2009-04-22 | 2010-10-28 | Lg Chem, Ltd. | Slurry for chemical mechanical polishing |
| WO2011049318A2 (ko) | 2009-10-13 | 2011-04-28 | 주식회사 엘지화학 | Cmp용 슬러리 조성물 및 연마방법 |
| JP2011142284A (ja) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Ｃｍｐ研磨液、基板の研磨方法及び電子部品 |
| US8496843B2 (en) * | 2010-03-16 | 2013-07-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| US8491808B2 (en) | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride |
| US8232208B2 (en) | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
| SG10201506169XA (en) * | 2010-09-08 | 2015-09-29 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
| WO2012032467A1 (en) * | 2010-09-08 | 2012-03-15 | Basf Se | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films |
| SG188460A1 (en) | 2010-09-08 | 2013-04-30 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
| SG11201606187RA (en) | 2010-09-08 | 2016-09-29 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| RU2608890C2 (ru) | 2010-09-08 | 2017-01-26 | Басф Се | Водные полирующие композиции, содержащие n-замещенные диазений диоксиды и/или соли n -замещенных n'-гидрокси-диазений оксидов |
| US8568610B2 (en) | 2010-09-20 | 2013-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate |
| US8513126B2 (en) | 2010-09-22 | 2013-08-20 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate |
| KR101907860B1 (ko) * | 2010-10-07 | 2018-10-15 | 바스프 에스이 | 수성 연마 조성물 및 패턴화 또는 비패턴화 저-ｋ 유전층을 갖는 기판의 화학적 기계적 연마 방법 |
| TWI583755B (zh) * | 2010-12-10 | 2017-05-21 | 巴斯夫歐洲公司 | 用於將含氧化矽介電質及多晶矽薄膜之基板化學機械拋光的水性拋光組成物及方法 |
| KR101919750B1 (ko) * | 2010-12-10 | 2018-11-19 | 바스프 에스이 | 산화규소 유전체 및 폴리실리콘 필름을 함유하는 기판의 화학적 기계적 연마를 위한 수성 연마 조성물 및 방법 |
| KR20140012660A (ko) | 2011-03-11 | 2014-02-03 | 바스프 에스이 | 베이스 웨이퍼 관통 비아들을 형성하는 방법 |
| CN102744668B (zh) * | 2011-04-20 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 抛光方法以及浮栅的形成方法 |
| US8440094B1 (en) | 2011-10-27 | 2013-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate |
| US8435420B1 (en) | 2011-10-27 | 2013-05-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing using tunable polishing formulation |
| US9157012B2 (en) * | 2011-12-21 | 2015-10-13 | Basf Se | Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a CMP composition comprising anionic phosphate or phosphonate |
| CN103998547A (zh) * | 2011-12-21 | 2014-08-20 | 巴斯夫欧洲公司 | 包含聚乙烯基膦酸及其衍生物的化学机械抛光组合物 |
| US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US9337103B2 (en) * | 2012-12-07 | 2016-05-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for removing hard mask oxide and making gate structure of semiconductor devices |
| CN103865400A (zh) * | 2012-12-10 | 2014-06-18 | 安集微电子（上海）有限公司 | 一种磷酸酯表面活性剂在自停止抛光中的应用 |
| JP6209845B2 (ja) * | 2013-04-11 | 2017-10-11 | 日立化成株式会社 | 研磨液、研磨液セット及び基体の研磨方法 |
| US9567492B2 (en) * | 2014-08-28 | 2017-02-14 | Sinmat, Inc. | Polishing of hard substrates with soft-core composite particles |
| WO2016111718A1 (en) | 2015-01-05 | 2016-07-14 | Rhodia Operations | Amine-imino dialcohol neutralizing agents for low volatile compound aqueous organic coating compositions and methods for using same |
| US9597768B1 (en) * | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
| JP6620590B2 (ja) * | 2016-02-22 | 2019-12-18 | 日立化成株式会社 | 研磨液及び研磨方法 |
| KR102694174B1 (ko) * | 2018-10-01 | 2024-08-13 | 솔브레인 주식회사 | 저온폴리실리콘 돌기 연마용 화학적 기계적 연마 슬러리 조성물 및 상기 연마 슬러리 조성물을 이용한 저온폴리실리콘 돌기 연마방법 |
| US11342256B2 (en) | 2019-01-24 | 2022-05-24 | Applied Materials, Inc. | Method of fine redistribution interconnect formation for advanced packaging applications |
| US10626298B1 (en) * | 2019-03-20 | 2020-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon |
| IT201900006736A1 (it) | 2019-05-10 | 2020-11-10 | Applied Materials Inc | Procedimenti di fabbricazione di package |
| IT201900006740A1 (it) | 2019-05-10 | 2020-11-10 | Applied Materials Inc | Procedimenti di strutturazione di substrati |
| US11931855B2 (en) | 2019-06-17 | 2024-03-19 | Applied Materials, Inc. | Planarization methods for packaging substrates |
| US11862546B2 (en) | 2019-11-27 | 2024-01-02 | Applied Materials, Inc. | Package core assembly and fabrication methods |
| US11257790B2 (en) | 2020-03-10 | 2022-02-22 | Applied Materials, Inc. | High connectivity device stacking |
| US11454884B2 (en) | 2020-04-15 | 2022-09-27 | Applied Materials, Inc. | Fluoropolymer stamp fabrication method |
| US11400545B2 (en) | 2020-05-11 | 2022-08-02 | Applied Materials, Inc. | Laser ablation for package fabrication |
| US11232951B1 (en) | 2020-07-14 | 2022-01-25 | Applied Materials, Inc. | Method and apparatus for laser drilling blind vias |
| US11676832B2 (en) | 2020-07-24 | 2023-06-13 | Applied Materials, Inc. | Laser ablation system for package fabrication |
| US11521937B2 (en) | 2020-11-16 | 2022-12-06 | Applied Materials, Inc. | Package structures with built-in EMI shielding |
| US11404318B2 (en) | 2020-11-20 | 2022-08-02 | Applied Materials, Inc. | Methods of forming through-silicon vias in substrates for advanced packaging |
| US11705365B2 (en) | 2021-05-18 | 2023-07-18 | Applied Materials, Inc. | Methods of micro-via formation for advanced packaging |
| US12183684B2 (en) | 2021-10-26 | 2024-12-31 | Applied Materials, Inc. | Semiconductor device packaging methods |
| CN116445085A (zh) * | 2023-04-18 | 2023-07-18 | 万华化学集团电子材料有限公司 | 一种宽去除速率选择比的抛光组合物及其应用 |
| CN116314473B (zh) * | 2023-05-12 | 2023-11-07 | 一道新能源科技股份有限公司 | 一种p型ibc太阳能电池及其制绒方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046840A (en) * | 1995-06-19 | 2000-04-04 | Reflectivity, Inc. | Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements |
| AU1829500A (en) * | 1998-11-25 | 2000-06-13 | Petroferm Inc. | Aqueous cleaning |
| JP4075247B2 (ja) * | 1999-09-30 | 2008-04-16 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体 |
| US6468910B1 (en) * | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
| US6491843B1 (en) * | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US6527920B1 (en) * | 2000-05-10 | 2003-03-04 | Novellus Systems, Inc. | Copper electroplating apparatus |
| KR100378180B1 (ko) * | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
| JP4330265B2 (ja) * | 2000-10-24 | 2009-09-16 | 株式会社日本触媒 | 多孔質架橋重合体の製造方法 |
| US6677239B2 (en) * | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
| JP3899456B2 (ja) * | 2001-10-19 | 2007-03-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
| JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
| JP4212861B2 (ja) * | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法 |
| US20040092102A1 (en) * | 2002-11-12 | 2004-05-13 | Sachem, Inc. | Chemical mechanical polishing composition and method |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| JP2004297035A (ja) * | 2003-03-13 | 2004-10-21 | Hitachi Chem Co Ltd | 研磨剤、研磨方法及び電子部品の製造方法 |
| US7314578B2 (en) * | 2003-12-12 | 2008-01-01 | Samsung Electronics Co., Ltd. | Slurry compositions and CMP methods using the same |
| KR100640600B1 (ko) * | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법 |
| US7255810B2 (en) * | 2004-01-09 | 2007-08-14 | Cabot Microelectronics Corporation | Polishing system comprising a highly branched polymer |
| US20050230354A1 (en) * | 2004-04-14 | 2005-10-20 | Hardikar Vishwas V | Method and composition of post-CMP wetting of thin films |
| KR100611064B1 (ko) * | 2004-07-15 | 2006-08-10 | 삼성전자주식회사 | 화학 기계적 연마 공정용 슬러리 조성물, 상기 슬러리조성물을 이용한 화학 기계적 연마 방법 및 상기 방법을이용한 게이트 패턴의 형성 방법 |
| JP4012180B2 (ja) * | 2004-08-06 | 2007-11-21 | 株式会社東芝 | Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法 |
-
2005
- 2005-10-04 US US11/243,140 patent/US20070077865A1/en not_active Abandoned
-
2006
- 2006-09-28 TW TW095136031A patent/TWI316272B/zh active
- 2006-09-29 JP JP2008534569A patent/JP5689581B2/ja not_active Expired - Fee Related
- 2006-09-29 WO PCT/US2006/037831 patent/WO2007041203A1/en not_active Ceased
- 2006-09-29 KR KR1020087008090A patent/KR101165875B1/ko not_active Expired - Fee Related
- 2006-09-29 CN CN2006800449616A patent/CN101322227B/zh not_active Expired - Fee Related
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